JP2010263109A - 受発光装置 - Google Patents
受発光装置 Download PDFInfo
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- JP2010263109A JP2010263109A JP2009113492A JP2009113492A JP2010263109A JP 2010263109 A JP2010263109 A JP 2010263109A JP 2009113492 A JP2009113492 A JP 2009113492A JP 2009113492 A JP2009113492 A JP 2009113492A JP 2010263109 A JP2010263109 A JP 2010263109A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
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- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- -1 InGaN Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
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- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
Abstract
【解決手段】同一基板上に設けられた発光部100と受光部200a,200bとを含み、発光部は、第1クラッド層および第2クラッド層に挟まれた活性層と、第1クラッド層に電気的に接続された第1電極と、第2クラッド層に電気的に接続された第2電極と、を有し、受光部は、光吸収層を有し、活性層の少なくとも一部は、第1電極と第2電極の間の電流経路に利得領域140を構成し、利得領域は、活性層の第1側面105から第1側面と平行な第2側面107まで、第1側面の垂線に対して傾いた方向に向かって設けられ、利得領域に生じる光は、利得領域の第1側面側の端面151および第2側面側の端面152の少なくとも一方において、外部に出射される光と、反射される光と、に分けられ、反射される光は、受光部において受光される。
【選択図】図1
Description
同一基板上に設けられた発光部と受光部とを含み、
前記発光部は、
第1クラッド層および第2クラッド層に挟まれた活性層と、
前記第1クラッド層に電気的に接続された第1電極と、
前記第2クラッド層に電気的に接続された第2電極と、
を有し、
前記受光部は、光吸収層を有し、
前記活性層の少なくとも一部は、前記第1電極と前記第2電極の間の電流経路に利得領域を構成し、
前記利得領域は、平面的に見て、前記活性層の第1側面から前記第1側面と平行な第2側面まで、前記第1側面の垂線に対して傾いた方向に向かって設けられ、
前記利得領域に生じる光は、前記利得領域の前記第1側面側の端面および前記第2側面側の端面の少なくとも一方において、外部に出射される光と、反射される光と、に分けられ、
前記反射される光は、前記受光部において受光される。
方」という文言を用いている。
前記受光部は、前記第1側面側と前記第2側面側とに設けられていることができる。
前記発光部と前記受光部とを電気的に分離する分離溝を有することができる。
前記分離溝は、平面的に見て、前記受光部の周囲を囲んでいることができる。
前記活性層と前記光吸収層は、連続した1つの層であることができる。
前記活性層の下面の位置は、前記光吸収層の下面の位置より上方であり、
前記活性層の上面の位置は、前記光吸収層の上面の位置より下方であることができる。
前記利得領域では、前記第1側面側から平面的に見て、前記第1側面側の端面と、前記第2側面側の端面とは、重なっていないことができる。
前記利得領域は、複数配列され、
複数の前記利得領域の各々に対応して、前記受光部が設けられていることができる。
まず、本実施形態に係る受発光装置1000について説明する。
発光部100は、図2に示すように、第1クラッド層104および第2クラッド層108に挟まれた活性層106と、第1電極120と、第2電極122と、を有する。発光部100は、さらに、第1コンタクト層109を有することができる。
受光部200a,200bは、図1および図2に示すように、光吸収層206を含む。受光部200a,200bは、さらに、例えば、第3クラッド層204と、第4クラッド層208と、第2コンタクト層209と、第3電極210と、第4電極212と、を有することができる。
受発光装置1000の発光部100では、第1電極120と第2電極122との間に、pinダイオードの順バイアス電圧を印加すると、活性層106の利得領域140において電子と正孔との再結合が起こる。この再結合により発光が生じる。この生じた光を起点として、連鎖的に誘導放出が起こり、利得領域140内で光の強度が増幅される。例えば、図1に示すように、利得領域140に生じる光のうち、第1端面151に向かう光2は、利得領域140内で増幅された後、第1端面151から第1出射光2aとして出射される。同様に、利得領域140に生じる光のうち、第2端面152に向かう光4は、利得領域140内で増幅された後、第2端面152から第2出射光4aとして出射される。ここで、第1端面151に向かう光2および第2端面152に向かう光4の一部は、第1端面151および第2端面152で反射され、第1反射光2bおよび第2反射光4bとして受発光装置1000内を進行するものもある。すなわち、利得領域140に生じる光のうち、第1端面151に向かう光2は、第1端面151において、第1出射光2aと、第1反射光2bとに分けられる。第2端面152に向かう光4についても同様に、第2端面152において、第2出射光4aと、第2反射光4bとに分けられる。第1反射光2bは、受発光装置1000内を進行して第1受光部200aに至る。第2反射光4bも同様に、受発光装置1000内を進行して第2受光部200bに至る。なお、図1の例では、第1端面151および第2端面152の両方から光が出射される場合について説明したが、いずれか一方の端面から光が出射されてもよい。
次に、受発光装置1000の製造方法の一例について、図面を参照しながら説明する。
次に本実施形態に係る受発光装置の変形例について説明する。なお、上述した図1〜図2に示す受発光装置1000の例と異なる点について説明し、同様の点については同一の符号を付し説明を省略する。
まず、第1の変形例について説明する。
次に、第2の変形例について説明する。
次に、第3の変形例について説明する。
次に、第4の変形例について説明する。
Claims (8)
- 同一基板上に設けられた発光部と受光部とを含み、
前記発光部は、
第1クラッド層および第2クラッド層に挟まれた活性層と、
前記第1クラッド層に電気的に接続された第1電極と、
前記第2クラッド層に電気的に接続された第2電極と、
を有し、
前記受光部は、光吸収層を有し、
前記活性層の少なくとも一部は、前記第1電極と前記第2電極の間の電流経路に利得領域を構成し、
前記利得領域は、平面的に見て、前記活性層の第1側面から前記第1側面と平行な第2側面まで、前記第1側面の垂線に対して傾いた方向に向かって設けられ、
前記利得領域に生じる光は、前記利得領域の前記第1側面側の端面および前記第2側面側の端面の少なくとも一方において、外部に出射される光と、反射される光と、に分けられ、
前記反射される光は、前記受光部において受光される、受発光装置。 - 請求項1において、
前記受光部は、前記第1側面側と前記第2側面側とに設けられている、受発光装置。 - 請求項1または2において、
前記発光部と前記受光部とを電気的に分離する分離溝を有する、受発光装置。 - 請求項3において、
前記分離溝は、平面的に見て、前記受光部を周囲を囲んでいる、受発光装置。 - 請求項1乃至4のいずれか一項において、
前記活性層と前記光吸収層は、連続した1つの層である、受発光装置。 - 請求項1乃至5のいずれか一項において、
前記活性層の下面の位置は、前記光吸収層の下面の位置より上方であり、
前記活性層の上面の位置は、前記光吸収層の上面の位置より下方である、受発光装置。 - 請求項1乃至6のいずれか一項において、
前記利得領域では、前記第1側面側から平面的に見て、前記第1側面側の端面と、前記第2側面側の端面とは、重なっていない、発光装置。 - 請求項1乃至7のいずれか一項において、
前記利得領域は、複数配列され、
複数の前記利得領域の各々に対応して、前記受光部が設けられている、受発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2009113492A JP5447794B2 (ja) | 2009-05-08 | 2009-05-08 | 発光装置 |
US12/767,103 US8344393B2 (en) | 2009-05-08 | 2010-04-26 | Light receiving and emitting device |
US13/693,624 US8629461B2 (en) | 2009-05-08 | 2012-12-04 | Light receiving and emitting device |
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JP2009113492A JP5447794B2 (ja) | 2009-05-08 | 2009-05-08 | 発光装置 |
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JP2010263109A true JP2010263109A (ja) | 2010-11-18 |
JP2010263109A5 JP2010263109A5 (ja) | 2012-06-21 |
JP5447794B2 JP5447794B2 (ja) | 2014-03-19 |
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JP5447794B2 (ja) * | 2009-05-08 | 2014-03-19 | セイコーエプソン株式会社 | 発光装置 |
JP5447799B2 (ja) * | 2009-06-18 | 2014-03-19 | セイコーエプソン株式会社 | 発光装置およびその駆動方法、並びに、プロジェクター |
ITMI20111447A1 (it) | 2011-07-29 | 2013-01-30 | E T C Srl | Transistor organico elettroluminescente |
ITMI20111446A1 (it) * | 2011-07-29 | 2013-01-30 | E T C Srl | Transistor organico elettroluminescente |
US20140184062A1 (en) * | 2012-12-27 | 2014-07-03 | GE Lighting Solutions, LLC | Systems and methods for a light emitting diode chip |
WO2016029104A1 (en) | 2014-08-22 | 2016-02-25 | Nse Products, Inc. | Selectively actuated fluid dispenser |
JP2018182306A (ja) * | 2017-04-17 | 2018-11-15 | 浜松ホトニクス株式会社 | 光半導体素子、及び光半導体素子の駆動方法 |
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JPH0433386A (ja) | 1990-05-30 | 1992-02-04 | Omron Corp | 端面出射型半導体発光素子およびその駆動方法 |
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JP5411440B2 (ja) | 2008-03-26 | 2014-02-12 | セイコーエプソン株式会社 | 発光装置 |
JP5382289B2 (ja) | 2008-03-26 | 2014-01-08 | セイコーエプソン株式会社 | 発光装置 |
JP5168476B2 (ja) | 2008-03-26 | 2013-03-21 | セイコーエプソン株式会社 | 発光装置 |
JP2009238846A (ja) | 2008-03-26 | 2009-10-15 | Seiko Epson Corp | 発光装置 |
JP2009238845A (ja) | 2008-03-26 | 2009-10-15 | Seiko Epson Corp | 発光モジュール及びその製造方法 |
JP5447794B2 (ja) * | 2009-05-08 | 2014-03-19 | セイコーエプソン株式会社 | 発光装置 |
-
2009
- 2009-05-08 JP JP2009113492A patent/JP5447794B2/ja not_active Expired - Fee Related
-
2010
- 2010-04-26 US US12/767,103 patent/US8344393B2/en not_active Expired - Fee Related
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2012
- 2012-12-04 US US13/693,624 patent/US8629461B2/en not_active Expired - Fee Related
Patent Citations (2)
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JPH0426159A (ja) * | 1990-05-22 | 1992-01-29 | Ricoh Co Ltd | 半導体光集積装置 |
JP2005216954A (ja) * | 2004-01-27 | 2005-08-11 | Sumitomo Electric Ind Ltd | 半導体光素子 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US8727031B2 (en) | 2008-12-12 | 2014-05-20 | Amrona Ag | System and method for preventing or extinguishing fire |
Also Published As
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US20130092959A1 (en) | 2013-04-18 |
JP5447794B2 (ja) | 2014-03-19 |
US20100283063A1 (en) | 2010-11-11 |
US8629461B2 (en) | 2014-01-14 |
US8344393B2 (en) | 2013-01-01 |
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