JP2010263109A5 - - Google Patents
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- Publication number
- JP2010263109A5 JP2010263109A5 JP2009113492A JP2009113492A JP2010263109A5 JP 2010263109 A5 JP2010263109 A5 JP 2010263109A5 JP 2009113492 A JP2009113492 A JP 2009113492A JP 2009113492 A JP2009113492 A JP 2009113492A JP 2010263109 A5 JP2010263109 A5 JP 2010263109A5
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- electrode
- emitting
- gain region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005253 cladding Methods 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 30
- 230000031700 light absorption Effects 0.000 claims description 24
- 238000000926 separation method Methods 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 216
- 230000004048 modification Effects 0.000 description 25
- 238000012986 modification Methods 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- -1 InGaN Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009113492A JP5447794B2 (ja) | 2009-05-08 | 2009-05-08 | 発光装置 |
| US12/767,103 US8344393B2 (en) | 2009-05-08 | 2010-04-26 | Light receiving and emitting device |
| US13/693,624 US8629461B2 (en) | 2009-05-08 | 2012-12-04 | Light receiving and emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009113492A JP5447794B2 (ja) | 2009-05-08 | 2009-05-08 | 発光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010263109A JP2010263109A (ja) | 2010-11-18 |
| JP2010263109A5 true JP2010263109A5 (enExample) | 2012-06-21 |
| JP5447794B2 JP5447794B2 (ja) | 2014-03-19 |
Family
ID=43061841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009113492A Expired - Fee Related JP5447794B2 (ja) | 2009-05-08 | 2009-05-08 | 発光装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US8344393B2 (enExample) |
| JP (1) | JP5447794B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE503531T1 (de) | 2008-12-12 | 2011-04-15 | Amrona Ag | Inertisierungsverfahren zur brandverhütung und/oder feuerlöschung sowie inertisierungsanlage zur durchführung des verfahrens |
| JP5447794B2 (ja) * | 2009-05-08 | 2014-03-19 | セイコーエプソン株式会社 | 発光装置 |
| JP5447799B2 (ja) * | 2009-06-18 | 2014-03-19 | セイコーエプソン株式会社 | 発光装置およびその駆動方法、並びに、プロジェクター |
| ITMI20111446A1 (it) * | 2011-07-29 | 2013-01-30 | E T C Srl | Transistor organico elettroluminescente |
| ITMI20111447A1 (it) | 2011-07-29 | 2013-01-30 | E T C Srl | Transistor organico elettroluminescente |
| US20140184062A1 (en) * | 2012-12-27 | 2014-07-03 | GE Lighting Solutions, LLC | Systems and methods for a light emitting diode chip |
| US10022741B2 (en) | 2014-08-22 | 2018-07-17 | Nse Products, Inc. | Selectively actuated fluid dispenser |
| JP2018182306A (ja) * | 2017-04-17 | 2018-11-15 | 浜松ホトニクス株式会社 | 光半導体素子、及び光半導体素子の駆動方法 |
| WO2025117622A1 (en) * | 2023-11-27 | 2025-06-05 | Massachusetts Institute Of Technology | An integrated pixel cell for a display device and/or optical communication device |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0426159A (ja) * | 1990-05-22 | 1992-01-29 | Ricoh Co Ltd | 半導体光集積装置 |
| JPH0433386A (ja) | 1990-05-30 | 1992-02-04 | Omron Corp | 端面出射型半導体発光素子およびその駆動方法 |
| JPH08162669A (ja) | 1994-12-06 | 1996-06-21 | Nippondenso Co Ltd | スーパールミネッセントダイオード |
| JPH103691A (ja) | 1996-04-18 | 1998-01-06 | Matsushita Electric Ind Co Ltd | 光ピックアップ装置 |
| US6459716B1 (en) * | 2001-02-01 | 2002-10-01 | Nova Crystals, Inc. | Integrated surface-emitting laser and modulator device |
| KR100575964B1 (ko) | 2003-12-16 | 2006-05-02 | 삼성전자주식회사 | 광검출기가 모놀리식 집적된 전계 흡수형 광변조 모듈 |
| JP2005216954A (ja) * | 2004-01-27 | 2005-08-11 | Sumitomo Electric Ind Ltd | 半導体光素子 |
| JP2009238846A (ja) | 2008-03-26 | 2009-10-15 | Seiko Epson Corp | 発光装置 |
| JP5411440B2 (ja) | 2008-03-26 | 2014-02-12 | セイコーエプソン株式会社 | 発光装置 |
| JP2009238845A (ja) | 2008-03-26 | 2009-10-15 | Seiko Epson Corp | 発光モジュール及びその製造方法 |
| JP5168476B2 (ja) | 2008-03-26 | 2013-03-21 | セイコーエプソン株式会社 | 発光装置 |
| JP5382289B2 (ja) | 2008-03-26 | 2014-01-08 | セイコーエプソン株式会社 | 発光装置 |
| JP5447794B2 (ja) * | 2009-05-08 | 2014-03-19 | セイコーエプソン株式会社 | 発光装置 |
-
2009
- 2009-05-08 JP JP2009113492A patent/JP5447794B2/ja not_active Expired - Fee Related
-
2010
- 2010-04-26 US US12/767,103 patent/US8344393B2/en not_active Expired - Fee Related
-
2012
- 2012-12-04 US US13/693,624 patent/US8629461B2/en not_active Expired - Fee Related
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