JP5437895B2 - 表示装置及びその製造方法 - Google Patents

表示装置及びその製造方法 Download PDF

Info

Publication number
JP5437895B2
JP5437895B2 JP2010097034A JP2010097034A JP5437895B2 JP 5437895 B2 JP5437895 B2 JP 5437895B2 JP 2010097034 A JP2010097034 A JP 2010097034A JP 2010097034 A JP2010097034 A JP 2010097034A JP 5437895 B2 JP5437895 B2 JP 5437895B2
Authority
JP
Japan
Prior art keywords
conductive film
film
light
patterned conductive
transmitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010097034A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011227294A5 (enExample
JP2011227294A (ja
Inventor
武 栗谷川
純 藤吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Liquid Crystal Display Co Ltd
Japan Display Inc
Original Assignee
Panasonic Liquid Crystal Display Co Ltd
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Liquid Crystal Display Co Ltd, Japan Display Inc filed Critical Panasonic Liquid Crystal Display Co Ltd
Priority to JP2010097034A priority Critical patent/JP5437895B2/ja
Priority to US13/085,517 priority patent/US8409891B2/en
Publication of JP2011227294A publication Critical patent/JP2011227294A/ja
Publication of JP2011227294A5 publication Critical patent/JP2011227294A5/ja
Priority to US13/792,404 priority patent/US8729556B2/en
Application granted granted Critical
Publication of JP5437895B2 publication Critical patent/JP5437895B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
JP2010097034A 2010-04-20 2010-04-20 表示装置及びその製造方法 Active JP5437895B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010097034A JP5437895B2 (ja) 2010-04-20 2010-04-20 表示装置及びその製造方法
US13/085,517 US8409891B2 (en) 2010-04-20 2011-04-13 Display device and manufacturing method thereof
US13/792,404 US8729556B2 (en) 2010-04-20 2013-03-11 Display device having a wiring of laminated light transmitting films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010097034A JP5437895B2 (ja) 2010-04-20 2010-04-20 表示装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2011227294A JP2011227294A (ja) 2011-11-10
JP2011227294A5 JP2011227294A5 (enExample) 2013-03-07
JP5437895B2 true JP5437895B2 (ja) 2014-03-12

Family

ID=44787578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010097034A Active JP5437895B2 (ja) 2010-04-20 2010-04-20 表示装置及びその製造方法

Country Status (2)

Country Link
US (2) US8409891B2 (enExample)
JP (1) JP5437895B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07113102B2 (ja) 1987-11-12 1995-12-06 三井東圧化学株式会社 水性塗料用樹脂組成物

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9048148B2 (en) * 2012-04-28 2015-06-02 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method of manufacturing TFT array using multi-tone mask
US20170229554A1 (en) 2016-02-05 2017-08-10 Applied Materials, Inc. High-k dielectric materials utilized in display devices
US20180026055A1 (en) 2016-07-19 2018-01-25 Applied Materials, Inc. Hybrid high-k dielectric material film stacks comprising zirconium oxide utilized in display devices
KR102208520B1 (ko) 2016-07-19 2021-01-26 어플라이드 머티어리얼스, 인코포레이티드 디스플레이 디바이스들에서 활용되는 지르코늄 산화물을 포함하는 하이-k 유전체 재료들
EP4667565A2 (en) 2016-10-20 2025-12-24 Sangamo Therapeutics, Inc. Methods and compositions for the treatment of fabry disease
CN111273496B (zh) * 2020-02-10 2023-04-07 深圳市华星光电半导体显示技术有限公司 阵列基板及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW538246B (en) * 2000-06-05 2003-06-21 Semiconductor Energy Lab Display panel, display panel inspection method, and display panel manufacturing method
JP2003317971A (ja) * 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
JP2004253511A (ja) * 2003-02-19 2004-09-09 Hitachi Displays Ltd 表示装置
US7057208B2 (en) * 2003-03-25 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
KR100527193B1 (ko) * 2003-06-03 2005-11-08 삼성에스디아이 주식회사 다층구조 화소전극을 갖는 유기전계발광소자 및 그의제조방법
KR100659912B1 (ko) * 2003-12-03 2006-12-20 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
JP4464715B2 (ja) * 2004-03-09 2010-05-19 三菱電機株式会社 液晶表示装置およびこれらの製造方法
JP4275644B2 (ja) 2004-06-23 2009-06-10 シャープ株式会社 アクティブマトリクス基板およびその製造方法、並びに電子装置
JP5191709B2 (ja) * 2006-08-30 2013-05-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8148259B2 (en) 2006-08-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4705062B2 (ja) 2007-03-01 2011-06-22 株式会社神戸製鋼所 配線構造およびその作製方法
JP2009122561A (ja) * 2007-11-19 2009-06-04 Hitachi Displays Ltd 液晶表示装置
JP2009157200A (ja) 2007-12-27 2009-07-16 Sharp Corp 表示装置及びその製造方法
KR101525804B1 (ko) * 2008-04-14 2015-06-05 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07113102B2 (ja) 1987-11-12 1995-12-06 三井東圧化学株式会社 水性塗料用樹脂組成物

Also Published As

Publication number Publication date
US20110254006A1 (en) 2011-10-20
US20130193440A1 (en) 2013-08-01
JP2011227294A (ja) 2011-11-10
US8409891B2 (en) 2013-04-02
US8729556B2 (en) 2014-05-20

Similar Documents

Publication Publication Date Title
CN101344695B (zh) 显示面板及其制造方法
JP5437895B2 (ja) 表示装置及びその製造方法
JP2009133954A (ja) 液晶表示装置及びその製造方法
WO2012117695A1 (ja) 半導体装置及びその製造方法並びに表示装置
WO2014046025A1 (ja) 液晶ディスプレイ
CN103091915B (zh) 布线构造、包括它的薄膜晶体管阵列基板及显示装置
WO2009081633A1 (ja) アクティブマトリクス基板、これを備えた液晶表示装置、及びアクティブマトリクス基板の製造方法
WO2011074336A1 (ja) アクティブマトリクス基板、及び製造方法
JPWO2016111267A1 (ja) 薄膜トランジスタ基板、薄膜トランジスタ基板の製造方法、液晶表示装置
US11532679B2 (en) Method of fabricating array substrate, array substrate, and display apparatus
JP2009016756A (ja) アクティブマトリクス駆動表示装置
US10211232B2 (en) Manufacture method of array substrate and array substrate manufactured by the method
US20190109155A1 (en) Array substrate, method of producing the same, and display panel
WO2011161875A1 (ja) 表示装置用基板及びその製造方法、表示装置
JP4682278B2 (ja) 低温ポリシリコン薄膜トランジスタ液晶ディスプレイ装置に用いられる積層蓄積容量構造
JP5560227B2 (ja) 液晶表示装置の製造方法及び液晶表示装置
JP2009271105A (ja) 液晶表示装置の製造方法
US8581312B2 (en) Thin film transistor array panel and manufacturing method thereof
JP2007093859A (ja) 液晶装置および電子機器
JP6180200B2 (ja) アクティブマトリクス基板およびその製造方法
JP2008140950A (ja) 表示装置
JP2007248892A (ja) 液晶表示装置
JP2007206280A (ja) 液晶表示装置
JP5346494B2 (ja) 表示装置およびその製造方法
KR101188638B1 (ko) 액정표시소자 및 그 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130117

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130827

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130828

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131021

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131126

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131212

R150 Certificate of patent or registration of utility model

Ref document number: 5437895

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313117

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313117

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250