JP5427792B2 - メニスカスによるウエハー表面処理において近接ヘッドに対する流体の流速をほぼ一定にする装置 - Google Patents

メニスカスによるウエハー表面処理において近接ヘッドに対する流体の流速をほぼ一定にする装置 Download PDF

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Publication number
JP5427792B2
JP5427792B2 JP2010546083A JP2010546083A JP5427792B2 JP 5427792 B2 JP5427792 B2 JP 5427792B2 JP 2010546083 A JP2010546083 A JP 2010546083A JP 2010546083 A JP2010546083 A JP 2010546083A JP 5427792 B2 JP5427792 B2 JP 5427792B2
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Japan
Prior art keywords
bore
fluid
resistance
flow
plenum
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Expired - Fee Related
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JP2010546083A
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English (en)
Japanese (ja)
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JP2011512654A5 (https=
JP2011512654A (ja
Inventor
ホロデンコ・アーノルド
リン・チェン−ユー（ショーン）
マーティン・ラッセル
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)
  • Cleaning By Liquid Or Steam (AREA)
JP2010546083A 2008-02-08 2009-02-07 メニスカスによるウエハー表面処理において近接ヘッドに対する流体の流速をほぼ一定にする装置 Expired - Fee Related JP5427792B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6508808P 2008-02-08 2008-02-08
US61/065,088 2008-02-08
PCT/US2009/033499 WO2009100409A2 (en) 2008-02-08 2009-02-07 Apparatus for substantially uniform fluid flow rates relative to a proximity head in processing of a wafer surface by a meniscus

Publications (3)

Publication Number Publication Date
JP2011512654A JP2011512654A (ja) 2011-04-21
JP2011512654A5 JP2011512654A5 (https=) 2012-03-22
JP5427792B2 true JP5427792B2 (ja) 2014-02-26

Family

ID=40952731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010546083A Expired - Fee Related JP5427792B2 (ja) 2008-02-08 2009-02-07 メニスカスによるウエハー表面処理において近接ヘッドに対する流体の流速をほぼ一定にする装置

Country Status (7)

Country Link
US (2) US8317966B2 (https=)
JP (1) JP5427792B2 (https=)
KR (1) KR101679432B1 (https=)
CN (1) CN101971299B (https=)
SG (1) SG188086A1 (https=)
TW (1) TWI381473B (https=)
WO (1) WO2009100409A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7849554B2 (en) * 2009-04-28 2010-12-14 Lam Research Corporation Apparatus and system for cleaning substrate
JP5701645B2 (ja) * 2011-03-01 2015-04-15 株式会社Ｓｃｒｅｅｎホールディングス ノズル、基板処理装置、および基板処理方法
JP6061181B2 (ja) 2012-08-20 2017-01-18 ローム株式会社 半導体装置
US9859135B2 (en) * 2014-12-19 2018-01-02 Applied Materials, Inc. Substrate rinsing systems and methods
KR102116534B1 (ko) * 2018-06-25 2020-05-28 주식회사 에이치에스하이테크 기판 세정용 노즐 및 그 제조 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041181A (en) * 1987-10-06 1991-08-20 Integrated Fluidics Company Method of bonding plastics
US7234477B2 (en) * 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
JP2002075947A (ja) * 2000-08-30 2002-03-15 Alps Electric Co Ltd ウェット処理装置
JP3880480B2 (ja) 2001-12-06 2007-02-14 東京エレクトロン株式会社 液処理装置
JP3916491B2 (ja) 2002-03-28 2007-05-16 芝浦メカトロニクス株式会社 基板の処理装置
JP2003324072A (ja) * 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US7240679B2 (en) * 2002-09-30 2007-07-10 Lam Research Corporation System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6954993B1 (en) * 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7520285B2 (en) * 2002-09-30 2009-04-21 Lam Research Corporation Apparatus and method for processing a substrate
US7329321B2 (en) * 2002-09-30 2008-02-12 Lam Research Corporation Enhanced wafer cleaning method
JP4343031B2 (ja) * 2004-05-31 2009-10-14 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US7003899B1 (en) * 2004-09-30 2006-02-28 Lam Research Corporation System and method for modulating flow through multiple ports in a proximity head
JP5068471B2 (ja) 2006-03-31 2012-11-07 東京エレクトロン株式会社 基板処理装置
US7998304B2 (en) * 2007-12-20 2011-08-16 Lam Research Corporation Methods of configuring a proximity head that provides uniform fluid flow relative to a wafer

Also Published As

Publication number Publication date
SG188086A1 (en) 2013-03-28
TWI381473B (zh) 2013-01-01
JP2011512654A (ja) 2011-04-21
US20100037922A1 (en) 2010-02-18
US20130048765A1 (en) 2013-02-28
CN101971299A (zh) 2011-02-09
US8317966B2 (en) 2012-11-27
CN101971299B (zh) 2013-03-20
TW201001587A (en) 2010-01-01
KR20100119763A (ko) 2010-11-10
WO2009100409A3 (en) 2009-12-03
KR101679432B1 (ko) 2016-12-06
WO2009100409A2 (en) 2009-08-13
US8900400B2 (en) 2014-12-02

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