KR101679432B1 - 메니스커스에 의한 웨이퍼 표면의 프로세싱에서 근접 헤드에 대한 실질적으로 균일한 유체 흐름 레이트를 위한 장치 - Google Patents

메니스커스에 의한 웨이퍼 표면의 프로세싱에서 근접 헤드에 대한 실질적으로 균일한 유체 흐름 레이트를 위한 장치 Download PDF

Info

Publication number
KR101679432B1
KR101679432B1 KR1020107017572A KR20107017572A KR101679432B1 KR 101679432 B1 KR101679432 B1 KR 101679432B1 KR 1020107017572 A KR1020107017572 A KR 1020107017572A KR 20107017572 A KR20107017572 A KR 20107017572A KR 101679432 B1 KR101679432 B1 KR 101679432B1
Authority
KR
South Korea
Prior art keywords
resistor
fluid
bore
block
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020107017572A
Other languages
English (en)
Korean (ko)
Other versions
KR20100119763A (ko
Inventor
아놀드 콜로덴코
청-유 린 (션)
러셀 마틴
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20100119763A publication Critical patent/KR20100119763A/ko
Application granted granted Critical
Publication of KR101679432B1 publication Critical patent/KR101679432B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00Cleaning and liquid contact with solids
    • Y10S134/902Semiconductor wafer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49826Assembling or joining

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)
  • Cleaning By Liquid Or Steam (AREA)
KR1020107017572A 2008-02-08 2009-02-07 메니스커스에 의한 웨이퍼 표면의 프로세싱에서 근접 헤드에 대한 실질적으로 균일한 유체 흐름 레이트를 위한 장치 Expired - Fee Related KR101679432B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6508808P 2008-02-08 2008-02-08
US61/065,088 2008-02-08
PCT/US2009/033499 WO2009100409A2 (en) 2008-02-08 2009-02-07 Apparatus for substantially uniform fluid flow rates relative to a proximity head in processing of a wafer surface by a meniscus

Publications (2)

Publication Number Publication Date
KR20100119763A KR20100119763A (ko) 2010-11-10
KR101679432B1 true KR101679432B1 (ko) 2016-12-06

Family

ID=40952731

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107017572A Expired - Fee Related KR101679432B1 (ko) 2008-02-08 2009-02-07 메니스커스에 의한 웨이퍼 표면의 프로세싱에서 근접 헤드에 대한 실질적으로 균일한 유체 흐름 레이트를 위한 장치

Country Status (7)

Country Link
US (2) US8317966B2 (https=)
JP (1) JP5427792B2 (https=)
KR (1) KR101679432B1 (https=)
CN (1) CN101971299B (https=)
SG (1) SG188086A1 (https=)
TW (1) TWI381473B (https=)
WO (1) WO2009100409A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7849554B2 (en) * 2009-04-28 2010-12-14 Lam Research Corporation Apparatus and system for cleaning substrate
JP5701645B2 (ja) * 2011-03-01 2015-04-15 株式会社Screenホールディングス ノズル、基板処理装置、および基板処理方法
JP6061181B2 (ja) 2012-08-20 2017-01-18 ローム株式会社 半導体装置
US9859135B2 (en) * 2014-12-19 2018-01-02 Applied Materials, Inc. Substrate rinsing systems and methods
KR102116534B1 (ko) * 2018-06-25 2020-05-28 주식회사 에이치에스하이테크 기판 세정용 노즐 및 그 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003234286A (ja) 2001-12-06 2003-08-22 Tokyo Electron Ltd 液処理装置
JP2003297800A (ja) 2002-03-28 2003-10-17 Shibaura Mechatronics Corp 基板の処理装置及び処理液の噴射装置
JP2007270232A (ja) 2006-03-31 2007-10-18 Tokyo Electron Ltd 基板処理装置および基板載置台

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041181A (en) * 1987-10-06 1991-08-20 Integrated Fluidics Company Method of bonding plastics
US7234477B2 (en) * 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
JP2002075947A (ja) * 2000-08-30 2002-03-15 Alps Electric Co Ltd ウェット処理装置
JP2003324072A (ja) * 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US7240679B2 (en) * 2002-09-30 2007-07-10 Lam Research Corporation System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6954993B1 (en) * 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7520285B2 (en) * 2002-09-30 2009-04-21 Lam Research Corporation Apparatus and method for processing a substrate
US7329321B2 (en) * 2002-09-30 2008-02-12 Lam Research Corporation Enhanced wafer cleaning method
JP4343031B2 (ja) * 2004-05-31 2009-10-14 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US7003899B1 (en) * 2004-09-30 2006-02-28 Lam Research Corporation System and method for modulating flow through multiple ports in a proximity head
US7998304B2 (en) * 2007-12-20 2011-08-16 Lam Research Corporation Methods of configuring a proximity head that provides uniform fluid flow relative to a wafer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003234286A (ja) 2001-12-06 2003-08-22 Tokyo Electron Ltd 液処理装置
JP2003297800A (ja) 2002-03-28 2003-10-17 Shibaura Mechatronics Corp 基板の処理装置及び処理液の噴射装置
JP2007270232A (ja) 2006-03-31 2007-10-18 Tokyo Electron Ltd 基板処理装置および基板載置台

Also Published As

Publication number Publication date
SG188086A1 (en) 2013-03-28
TWI381473B (zh) 2013-01-01
JP2011512654A (ja) 2011-04-21
US20100037922A1 (en) 2010-02-18
US20130048765A1 (en) 2013-02-28
CN101971299A (zh) 2011-02-09
JP5427792B2 (ja) 2014-02-26
US8317966B2 (en) 2012-11-27
CN101971299B (zh) 2013-03-20
TW201001587A (en) 2010-01-01
KR20100119763A (ko) 2010-11-10
WO2009100409A3 (en) 2009-12-03
WO2009100409A2 (en) 2009-08-13
US8900400B2 (en) 2014-12-02

Similar Documents

Publication Publication Date Title
KR101679432B1 (ko) 메니스커스에 의한 웨이퍼 표면의 프로세싱에서 근접 헤드에 대한 실질적으로 균일한 유체 흐름 레이트를 위한 장치
KR102304903B1 (ko) 웨이퍼 프로세스 장비에서의 화학물질 제어 피쳐들
KR101448131B1 (ko) 퓸 제거 기능을 갖는 사이드 스토리지 챔버
JP5164990B2 (ja) 基板処理メニスカスによって残される入口マークおよび/または出口マークを低減させるためのキャリア
TWI888538B (zh) 多通道噴頭設計及其製造方法
US7998304B2 (en) Methods of configuring a proximity head that provides uniform fluid flow relative to a wafer
US8313582B2 (en) System, method and apparatus for maintaining separation of liquids in a controlled meniscus
JP2010524204A (ja) 傾斜した真空導管システムを備えた近接ヘッド、並びに、その装置および方法
KR101549562B1 (ko) 웨이퍼에 대하여 균일한 유체 흐름을 제공하는 근접 헤드를 구성하는 방법
US20240021445A1 (en) Substrate processing apparatus and substrate processing method
TWI861912B (zh) 清潔刷及化學機械平坦化設備
KR20050102966A (ko) 반도체 부품 세척장치
TWI868717B (zh) 包含有歧管構件的流體流動控制系統及方法
US20060244191A1 (en) Chip holder and chip treatmant method
CN224072033U (zh) 一种pcr管架
JP7596201B2 (ja) 基板処理装置及び基板処理方法
JP2007027750A (ja) 半導体基板乾燥装置
KR20100000067U (ko) 반도체 제조용 샤워헤드
JP2005523571A (ja) 半導体ウエハの表面処理のための装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20191108

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20231119

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20231119

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000