JP5424267B2 - マイクロレンズ露光装置 - Google Patents

マイクロレンズ露光装置 Download PDF

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Publication number
JP5424267B2
JP5424267B2 JP2010177873A JP2010177873A JP5424267B2 JP 5424267 B2 JP5424267 B2 JP 5424267B2 JP 2010177873 A JP2010177873 A JP 2010177873A JP 2010177873 A JP2010177873 A JP 2010177873A JP 5424267 B2 JP5424267 B2 JP 5424267B2
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JP
Japan
Prior art keywords
microlens
inspection
mask
light
microlens array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010177873A
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English (en)
Japanese (ja)
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JP2012038927A (ja
JP2012038927A5 (https=
Inventor
通伸 水村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
V Technology Co Ltd
Original Assignee
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2010177873A priority Critical patent/JP5424267B2/ja
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Priority to KR1020137005682A priority patent/KR101820999B1/ko
Priority to US13/813,130 priority patent/US9429852B2/en
Priority to CN201180038786.0A priority patent/CN103026458B/zh
Priority to PCT/JP2011/066217 priority patent/WO2012017808A1/ja
Priority to TW100127437A priority patent/TWI529498B/zh
Publication of JP2012038927A publication Critical patent/JP2012038927A/ja
Publication of JP2012038927A5 publication Critical patent/JP2012038927A5/ja
Application granted granted Critical
Publication of JP5424267B2 publication Critical patent/JP5424267B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/703—Gap setting, e.g. in proximity printer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2010177873A 2010-08-06 2010-08-06 マイクロレンズ露光装置 Expired - Fee Related JP5424267B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010177873A JP5424267B2 (ja) 2010-08-06 2010-08-06 マイクロレンズ露光装置
US13/813,130 US9429852B2 (en) 2010-08-06 2011-07-15 Microlens exposure system
CN201180038786.0A CN103026458B (zh) 2010-08-06 2011-07-15 微透镜曝光装置
PCT/JP2011/066217 WO2012017808A1 (ja) 2010-08-06 2011-07-15 マイクロレンズ露光装置
KR1020137005682A KR101820999B1 (ko) 2010-08-06 2011-07-15 마이크로 렌즈 노광 장치
TW100127437A TWI529498B (zh) 2010-08-06 2011-08-02 微透鏡曝光裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010177873A JP5424267B2 (ja) 2010-08-06 2010-08-06 マイクロレンズ露光装置

Publications (3)

Publication Number Publication Date
JP2012038927A JP2012038927A (ja) 2012-02-23
JP2012038927A5 JP2012038927A5 (https=) 2012-04-05
JP5424267B2 true JP5424267B2 (ja) 2014-02-26

Family

ID=45559315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010177873A Expired - Fee Related JP5424267B2 (ja) 2010-08-06 2010-08-06 マイクロレンズ露光装置

Country Status (6)

Country Link
US (1) US9429852B2 (https=)
JP (1) JP5424267B2 (https=)
KR (1) KR101820999B1 (https=)
CN (1) CN103026458B (https=)
TW (1) TWI529498B (https=)
WO (1) WO2012017808A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5376379B2 (ja) * 2010-08-30 2013-12-25 株式会社ブイ・テクノロジー マイクロレンズアレイを使用した露光装置及び光学部材
FR3014212B1 (fr) 2013-12-04 2017-05-26 Fogale Nanotech Dispositif et procede de positionnement de masque de photolithographie par methode optique sans contact
CN104865801B (zh) * 2015-06-01 2017-03-01 京东方科技集团股份有限公司 曝光装置
CN108027129B (zh) * 2015-08-28 2020-05-15 赫普塔冈微光有限公司 用于平移光的照明模块
JPWO2017170392A1 (ja) * 2016-03-30 2019-03-07 株式会社ニコン 光学装置
CN107843966B (zh) * 2016-09-18 2021-05-04 中芯国际集成电路制造(上海)有限公司 用于装配微透镜阵列组件的方法和系统
US11391565B2 (en) 2016-12-12 2022-07-19 National Institute Of Advanced Industrial Science And Technology Marker and marker manufacturing method
US10270032B2 (en) * 2017-09-13 2019-04-23 Int Tech Co., Ltd. Light source and a manufacturing method therewith
JP7082927B2 (ja) * 2018-08-27 2022-06-09 株式会社Ｓｃｒｅｅｎホールディングス 露光装置
CN109062001B (zh) * 2018-08-27 2022-04-08 京东方科技集团股份有限公司 一种掩膜版
CN115207262B (zh) * 2022-08-02 2025-12-02 深圳市华星光电半导体显示技术有限公司 显示面板的制备方法以及显示装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH697814B1 (de) * 2001-01-26 2009-02-27 Tecan Trading Ag Optisches System und Verfahren zum Anregen und Messen von Fluoreszenz an oder in mit Fluoreszenzfarbstoffen behandelten Proben.
US4767171A (en) * 1986-03-27 1988-08-30 Siemens Aktiengesellschaft Transmission and reception module for a bidirectional communication network
JPH0243511A (ja) * 1988-08-04 1990-02-14 Fuji Electric Co Ltd イメージセンサ対の光学系との位置合わせ方法
JPH0320733A (ja) * 1989-06-16 1991-01-29 Matsushita Electron Corp ホトマスク
JP3555230B2 (ja) * 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
JP3374875B2 (ja) * 1994-06-21 2003-02-10 三菱電機株式会社 半導体写真製版装置及びそれを用いて形成された微細パターン
JP2002006208A (ja) 2000-06-23 2002-01-09 Asahi Optical Co Ltd 自動焦点検出機構を備えたデジタルスチルカメラ
KR100877708B1 (ko) * 2001-03-29 2009-01-07 다이니폰 인사츠 가부시키가이샤 패턴 형성체의 제조 방법 및 그것에 사용하는 포토마스크
JP2007003829A (ja) * 2005-06-23 2007-01-11 Fujifilm Holdings Corp 画像露光装置
JP2009302400A (ja) 2008-06-16 2009-12-24 Canon Inc 露光装置及びデバイス製造方法
JP5381029B2 (ja) 2008-11-10 2014-01-08 ウシオ電機株式会社 露光装置
KR101941323B1 (ko) * 2011-08-10 2019-01-22 브이 테크놀로지 씨오. 엘티디 노광 장치용 얼라인먼트 장치 및 얼라인먼트 마크

Also Published As

Publication number Publication date
JP2012038927A (ja) 2012-02-23
KR101820999B1 (ko) 2018-01-22
CN103026458A (zh) 2013-04-03
US9429852B2 (en) 2016-08-30
TW201234117A (en) 2012-08-16
US20130141704A1 (en) 2013-06-06
CN103026458B (zh) 2015-11-25
TWI529498B (zh) 2016-04-11
WO2012017808A1 (ja) 2012-02-09
KR20140002612A (ko) 2014-01-08

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