JP5421258B2 - フォトリソグラフィープロセス用の非共有結合架橋性材料 - Google Patents
フォトリソグラフィープロセス用の非共有結合架橋性材料 Download PDFInfo
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- JP5421258B2 JP5421258B2 JP2010520114A JP2010520114A JP5421258B2 JP 5421258 B2 JP5421258 B2 JP 5421258B2 JP 2010520114 A JP2010520114 A JP 2010520114A JP 2010520114 A JP2010520114 A JP 2010520114A JP 5421258 B2 JP5421258 B2 JP 5421258B2
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- 229920000642 polymer Polymers 0.000 claims description 61
- 238000011049 filling Methods 0.000 claims description 42
- 239000002904 solvent Substances 0.000 claims description 41
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- 238000005530 etching Methods 0.000 claims description 27
- 125000000217 alkyl group Chemical group 0.000 claims description 26
- 239000000178 monomer Substances 0.000 claims description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims description 20
- 239000001257 hydrogen Substances 0.000 claims description 15
- 125000006239 protecting group Chemical group 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 239000006117 anti-reflective coating Substances 0.000 claims description 11
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 10
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- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 238000004377 microelectronic Methods 0.000 claims description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- MVETVBHSYIYRCX-UHFFFAOYSA-I [Ta+5].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Ta+5].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O MVETVBHSYIYRCX-UHFFFAOYSA-I 0.000 claims description 2
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- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
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- 239000010937 tungsten Substances 0.000 claims description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 2
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- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 37
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- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 12
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- GJWMYLFHBXEWNZ-UHFFFAOYSA-N tert-butyl (4-ethenylphenyl) carbonate Chemical compound CC(C)(C)OC(=O)OC1=CC=C(C=C)C=C1 GJWMYLFHBXEWNZ-UHFFFAOYSA-N 0.000 description 11
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 6
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- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
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- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 4
- JKNCOURZONDCGV-UHFFFAOYSA-N 2-(dimethylamino)ethyl 2-methylprop-2-enoate Chemical compound CN(C)CCOC(=O)C(C)=C JKNCOURZONDCGV-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
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- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- BYEAHWXPCBROCE-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropan-2-ol Chemical compound FC(F)(F)C(O)C(F)(F)F BYEAHWXPCBROCE-UHFFFAOYSA-N 0.000 description 1
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 1
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 description 1
- GNSFRPWPOGYVLO-UHFFFAOYSA-N 3-hydroxypropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCO GNSFRPWPOGYVLO-UHFFFAOYSA-N 0.000 description 1
- KFDVPJUYSDEJTH-UHFFFAOYSA-N 4-ethenylpyridine Chemical compound C=CC1=CC=NC=C1 KFDVPJUYSDEJTH-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- RHQDFWAXVIIEBN-UHFFFAOYSA-N Trifluoroethanol Chemical compound OCC(F)(F)F RHQDFWAXVIIEBN-UHFFFAOYSA-N 0.000 description 1
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- 125000003158 alcohol group Chemical group 0.000 description 1
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- 238000009835 boiling Methods 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
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- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 1
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- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical group [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 229920000075 poly(4-vinylpyridine) Polymers 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
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- 150000003141 primary amines Chemical group 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
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- 239000013557 residual solvent Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
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- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
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- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
- LFKDJXLFVYVEFG-UHFFFAOYSA-N tert-butyl carbamate Chemical group CC(C)(C)OC(N)=O LFKDJXLFVYVEFG-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
- C08F212/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
- C08F226/06—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/14—Methyl esters, e.g. methyl (meth)acrylate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1804—C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/52—Amides or imides
- C08F220/54—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide
- C08F220/56—Acrylamide; Methacrylamide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
- Y10T428/31935—Ester, halide or nitrile of addition polymer
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- General Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Engineering & Computer Science (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Emergency Medicine (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Laminated Bodies (AREA)
- Paints Or Removers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
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| US95266707P | 2007-07-30 | 2007-07-30 | |
| US60/952,667 | 2007-07-30 | ||
| PCT/US2008/071357 WO2009018217A2 (en) | 2007-07-30 | 2008-07-28 | Non-covalently crosslinkable materials for photolithography processes |
Publications (2)
| Publication Number | Publication Date |
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| JP2010535360A JP2010535360A (ja) | 2010-11-18 |
| JP5421258B2 true JP5421258B2 (ja) | 2014-02-19 |
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| EP (1) | EP2174189B1 (de) |
| JP (1) | JP5421258B2 (de) |
| KR (1) | KR101550471B1 (de) |
| CN (1) | CN101802711B (de) |
| TW (1) | TWI435178B (de) |
| WO (1) | WO2009018217A2 (de) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2216684B1 (de) * | 2009-02-08 | 2015-10-07 | Rohm and Haas Electronic Materials LLC | Verfahren zur Herstellung eines fotoresist Bild mit einer Unterschicht |
| US8877430B2 (en) | 2010-08-05 | 2014-11-04 | Brewer Science Inc. | Methods of producing structures using a developer-soluble layer with multilayer technology |
| US9263314B2 (en) | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
| JP2014507795A (ja) | 2010-12-27 | 2014-03-27 | ブルーワー サイエンス アイ エヌ シー． | 高度なパターン形成に必要な小型フィーチャのパターン形成プロセス |
| WO2013006865A2 (en) | 2011-07-07 | 2013-01-10 | Brewer Science Inc. | Methods of transferring device wafers or layers between carrier substrates and other surfaces |
| JP5708422B2 (ja) * | 2011-09-30 | 2015-04-30 | Jsr株式会社 | 液浸用上層膜形成組成物及びレジストパターン形成方法 |
| SG10201607603VA (en) * | 2011-10-10 | 2016-11-29 | Brewer Science Inc | Spin-on carbon compositions for lithographic processing |
| US9127126B2 (en) | 2012-04-30 | 2015-09-08 | Brewer Science Inc. | Development of high-viscosity bonding layer through in-situ polymer chain extension |
| US8961807B2 (en) | 2013-03-15 | 2015-02-24 | Cabot Microelectronics Corporation | CMP compositions with low solids content and methods related thereto |
| KR102472617B1 (ko) * | 2015-06-22 | 2022-11-30 | 브레우어 사이언스, 인코포레이션 | 초평탄화 스핀-온 카본 재료 |
| US11192101B2 (en) | 2018-08-28 | 2021-12-07 | International Business Machines Corporation | Method to create multilayer microfluidic chips using spin-on carbon as gap filling materials |
| US11084032B2 (en) | 2018-08-28 | 2021-08-10 | International Business Machines Corporation | Method to create multilayer microfluidic chips using spin-on carbon as gap fill and spin-on glass tone inversion |
| US11567408B2 (en) * | 2019-10-15 | 2023-01-31 | Rohm And Haas Electronic Materials Korea Ltd. | Coating composition for use with an overcoated photoresist |
| KR20220086638A (ko) | 2019-10-24 | 2022-06-23 | 브레우어 사이언스, 인코포레이션 | 규소 함량이 높은 습식 제거성 평탄화 층 |
| CN117637446A (zh) * | 2024-01-26 | 2024-03-01 | 粤芯半导体技术股份有限公司 | 一种半导体器件制作方法及半导体器件 |
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| GB1603908A (en) | 1978-05-31 | 1981-12-02 | Kodak Ltd | Radiationsensitive materials |
| DE3322058A1 (de) * | 1983-06-18 | 1984-12-20 | Agfa-Gevaert Ag, 5090 Leverkusen | Mit metallionen chelatisierbare oder chelatisierte monoazofarbstoffe, deren verwendung zur bilderzeugung, ein farbfotografisches aufzeichnungsmaterial mit farbabspaltern, die die farbstoffe freisetzen, und ein farbbild mit einer bildmaessigen verteilung von nickelkomplexen der farbstoffe |
| JPS6068056A (ja) * | 1983-09-21 | 1985-04-18 | Toyo Soda Mfg Co Ltd | イオン交換体 |
| US5100768A (en) * | 1989-05-09 | 1992-03-31 | Kabushiki Kaisha Toshiba | Photosensitive composition |
| CA2034274A1 (en) | 1990-02-07 | 1991-08-08 | James A. Bonham | Polymers containing halomethyl-1,3,5-triazine moieties |
| JP2985249B2 (ja) * | 1990-07-17 | 1999-11-29 | ソニー株式会社 | 化学増幅型レジスト |
| JPH04122942A (ja) * | 1990-09-13 | 1992-04-23 | Nippon Zeon Co Ltd | 下層平坦化材料 |
| EP0605089B1 (de) * | 1992-11-03 | 1999-01-07 | International Business Machines Corporation | Photolackzusammensetzung |
| US5304610A (en) * | 1993-01-12 | 1994-04-19 | Hoechst Celanese Corporation | Amphoteric copolymer derived from vinylpyridine and acetoxystyrene |
| JPH07128859A (ja) * | 1993-11-04 | 1995-05-19 | Wako Pure Chem Ind Ltd | レジスト組成物 |
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| KR100337021B1 (ko) | 1999-10-18 | 2002-05-16 | 윤덕용 | 이오노머형 발광 고분자 및 이를 이용한 전기 발광 소자 |
| US6645695B2 (en) | 2000-09-11 | 2003-11-11 | Shipley Company, L.L.C. | Photoresist composition |
| US6500527B2 (en) * | 2001-02-01 | 2002-12-31 | 3M Innovative Properties Company | Image receptor sheet |
| JP4177967B2 (ja) | 2001-02-06 | 2008-11-05 | 富士フイルム株式会社 | 平版印刷版用原版 |
| US20020150732A1 (en) * | 2001-02-09 | 2002-10-17 | Manisha Sarkar | Image receptor sheet containing vinylpyridine copolymer |
| JP4554889B2 (ja) * | 2001-03-22 | 2010-09-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | フォトレジスト組成物 |
| JP2002341525A (ja) | 2001-05-14 | 2002-11-27 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト転写材料およびそれを用いた基板表面の加工方法 |
| JP2003066607A (ja) | 2001-08-30 | 2003-03-05 | Fuji Photo Film Co Ltd | 赤外線レーザ用平版印刷版 |
| JP2004211015A (ja) * | 2003-01-08 | 2004-07-29 | Nippon Paint Co Ltd | 弱溶剤系一液型コーティング組成物およびその製造方法 |
| JP4303044B2 (ja) * | 2003-06-23 | 2009-07-29 | Ｎｅｃエレクトロニクス株式会社 | 化学増幅型レジスト組成物および該化学増幅型レジスト組成物を用いた半導体集積回路装置の製造方法 |
| TWI363251B (en) * | 2003-07-30 | 2012-05-01 | Nissan Chemical Ind Ltd | Sublayer coating-forming composition for lithography containing compound having protected carboxy group |
| US7463572B2 (en) | 2003-08-29 | 2008-12-09 | International Business Machines Corporation | High density data storage medium |
| US7364835B2 (en) | 2003-10-15 | 2008-04-29 | Brewer Science Inc. | Developer-soluble materials and methods of using the same in via-first dual damascene applications |
| JP2006030477A (ja) * | 2004-07-14 | 2006-02-02 | Fuji Photo Film Co Ltd | 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法 |
| US7754414B2 (en) * | 2006-07-12 | 2010-07-13 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
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- 2008-07-28 EP EP08796726.1A patent/EP2174189B1/de active Active
- 2008-07-28 JP JP2010520114A patent/JP5421258B2/ja active Active
- 2008-07-28 WO PCT/US2008/071357 patent/WO2009018217A2/en active Application Filing
- 2008-07-28 CN CN200880101360.3A patent/CN101802711B/zh active Active
- 2008-07-28 KR KR1020107004618A patent/KR101550471B1/ko active IP Right Grant
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Also Published As
| Publication number | Publication date |
|---|---|
| US9482951B2 (en) | 2016-11-01 |
| JP2010535360A (ja) | 2010-11-18 |
| WO2009018217A2 (en) | 2009-02-05 |
| CN101802711A (zh) | 2010-08-11 |
| CN101802711B (zh) | 2014-12-03 |
| EP2174189A2 (de) | 2010-04-14 |
| KR101550471B1 (ko) | 2015-09-04 |
| TW200919093A (en) | 2009-05-01 |
| EP2174189B1 (de) | 2024-02-07 |
| US20090035590A1 (en) | 2009-02-05 |
| EP2174189A4 (de) | 2011-01-19 |
| WO2009018217A3 (en) | 2009-03-26 |
| TWI435178B (zh) | 2014-04-21 |
| KR20100050535A (ko) | 2010-05-13 |
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