JP5410791B2 - 成膜方法および発光装置の作製方法 - Google Patents

成膜方法および発光装置の作製方法 Download PDF

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Publication number
JP5410791B2
JP5410791B2 JP2009060645A JP2009060645A JP5410791B2 JP 5410791 B2 JP5410791 B2 JP 5410791B2 JP 2009060645 A JP2009060645 A JP 2009060645A JP 2009060645 A JP2009060645 A JP 2009060645A JP 5410791 B2 JP5410791 B2 JP 5410791B2
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light
substrate
layer
film
light absorption
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Expired - Fee Related
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Japanese (ja)
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JP2009256784A5 (enExample
JP2009256784A (ja
Inventor
舜平 山崎
智哉 青山
卓也 鶴目
孝夫 濱田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2009256784A5 publication Critical patent/JP2009256784A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12354—Nonplanar, uniform-thickness material having symmetrical channel shape or reverse fold [e.g., making acute angle, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12361—All metal or with adjacent metals having aperture or cut
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y10T428/24372—Particulate matter
    • Y10T428/24397—Carbohydrate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2009060645A 2008-03-17 2009-03-13 成膜方法および発光装置の作製方法 Expired - Fee Related JP5410791B2 (ja)

Priority Applications (1)

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JP2009060645A JP5410791B2 (ja) 2008-03-17 2009-03-13 成膜方法および発光装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008068542 2008-03-17
JP2008068542 2008-03-17
JP2009060645A JP5410791B2 (ja) 2008-03-17 2009-03-13 成膜方法および発光装置の作製方法

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JP2009256784A JP2009256784A (ja) 2009-11-05
JP2009256784A5 JP2009256784A5 (enExample) 2012-04-12
JP5410791B2 true JP5410791B2 (ja) 2014-02-05

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US (2) US8182863B2 (enExample)
JP (1) JP5410791B2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7994021B2 (en) * 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
WO2009099002A1 (en) 2008-02-04 2009-08-13 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing light-emitting device
JP5416987B2 (ja) * 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
JP5238544B2 (ja) * 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US8182863B2 (en) * 2008-03-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
JP5292263B2 (ja) * 2008-12-05 2013-09-18 株式会社半導体エネルギー研究所 成膜方法及び発光素子の作製方法
DE102009007587B4 (de) * 2009-02-05 2011-06-01 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Beschichtung von Substraten aus der Dampfphase
JP5258666B2 (ja) * 2009-04-22 2013-08-07 株式会社半導体エネルギー研究所 発光装置の作製方法および成膜用基板
JP2011111568A (ja) * 2009-11-27 2011-06-09 Semiconductor Energy Lab Co Ltd 精製方法、高純度材料の作製方法、蒸着用基板の作製方法、および発光装置の作製方法
JP5747022B2 (ja) * 2010-03-18 2015-07-08 株式会社半導体エネルギー研究所 成膜方法及び成膜用基板の作製方法
KR20120106568A (ko) * 2011-03-18 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치의 제작 방법
JP5143266B1 (ja) * 2011-09-30 2013-02-13 株式会社東芝 フレキシブルプリント配線板の製造装置および製造方法
US20140226060A1 (en) * 2013-02-08 2014-08-14 Htc Corporation Electronic device and method for manufacturing the same
KR20140129784A (ko) * 2013-04-30 2014-11-07 삼성디스플레이 주식회사 레이저 열전사용 도너 기판, 레이저 열전사 방법 및 레이저 열전사 방법을 이용한 유기 발광 표시 장치의 제조 방법
KR20150056112A (ko) * 2013-11-14 2015-05-26 삼성디스플레이 주식회사 막 형성용 마스크, 이를 이용한 막 형성 방법 및 유기 발광 표시 장치의 제조 방법
CN111788864A (zh) * 2018-02-27 2020-10-16 堺显示器制品株式会社 柔性oled装置、其制造方法以及支承基板
WO2021005796A1 (ja) * 2019-07-11 2021-01-14 堺ディスプレイプロダクト株式会社 フレキシブル発光デバイス、その製造方法及び支持基板
JP6772348B2 (ja) * 2019-07-26 2020-10-21 堺ディスプレイプロダクト株式会社 フレキシブルｏｌｅｄデバイス、その製造方法及び支持基板

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3801730B2 (ja) 1997-05-09 2006-07-26 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及びそれを用いた薄膜形成方法
US5937272A (en) 1997-06-06 1999-08-10 Eastman Kodak Company Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate
US5851709A (en) 1997-10-31 1998-12-22 Eastman Kodak Company Method for selective transfer of a color organic layer
JP4547723B2 (ja) 1998-03-09 2010-09-22 セイコーエプソン株式会社 有機ｅｌ表示装置の製造方法
US6165543A (en) 1998-06-17 2000-12-26 Nec Corporation Method of making organic EL device and organic EL transfer base plate
JP3175733B2 (ja) * 1998-06-17 2001-06-11 日本電気株式会社 有機ｅｌ素子の製造方法
JP3740557B2 (ja) 1999-03-09 2006-02-01 独立行政法人産業技術総合研究所 有機薄膜作製方法および有機薄膜作製装置
TWI232595B (en) 1999-06-04 2005-05-11 Semiconductor Energy Lab Electroluminescence display device and electronic device
US8853696B1 (en) 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
JP4590663B2 (ja) 1999-10-29 2010-12-01 セイコーエプソン株式会社 カラーフィルタの製造方法
CN1437521A (zh) * 2000-06-22 2003-08-20 山春荣吉 干冰喷射装置
TW501379B (en) 2000-07-25 2002-09-01 Eastman Kodak Co Method of making organic electroluminescent device using laser transfer
CN1541504A (zh) 2001-08-16 2004-10-27 3M 在配置有电活性材料的可聚合的无定形基体上形成图形的方法和材料
US6699597B2 (en) 2001-08-16 2004-03-02 3M Innovative Properties Company Method and materials for patterning of an amorphous, non-polymeric, organic matrix with electrically active material disposed therein
US6695029B2 (en) 2001-12-12 2004-02-24 Eastman Kodak Company Apparatus for permitting transfer of organic material from a donor to form a layer in an OLED device
SG114589A1 (en) 2001-12-12 2005-09-28 Semiconductor Energy Lab Film formation apparatus and film formation method and cleaning method
US6610455B1 (en) 2002-01-30 2003-08-26 Eastman Kodak Company Making electroluminscent display devices
US20030162108A1 (en) 2002-01-30 2003-08-28 Eastman Kodak Company Using spacer elements to make electroluminscent display devices
US6703179B2 (en) 2002-03-13 2004-03-09 Eastman Kodak Company Transfer of organic material from a donor to form a layer in an OLED device
US6566032B1 (en) 2002-05-08 2003-05-20 Eastman Kodak Company In-situ method for making OLED devices that are moisture or oxygen-sensitive
JP2004071554A (ja) 2002-07-25 2004-03-04 Sanyo Electric Co Ltd 有機ｅｌパネルおよびその製造方法
US6811938B2 (en) 2002-08-29 2004-11-02 Eastman Kodak Company Using fiducial marks on a substrate for laser transfer of organic material from a donor to a substrate
JP2004103406A (ja) 2002-09-10 2004-04-02 Sony Corp 薄膜パターン形成方法および装置並びに有機ｅｌ表示装置の製造方法
JP4627961B2 (ja) 2002-09-20 2011-02-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20040191564A1 (en) 2002-12-17 2004-09-30 Samsung Sdi Co., Ltd. Donor film for low molecular weight full color organic electroluminescent device using laser induced thermal imaging method and method for fabricating low molecular weight full color organic electroluminescent device using the film
JP4493926B2 (ja) 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US20050145326A1 (en) 2004-01-05 2005-07-07 Eastman Kodak Company Method of making an OLED device
KR100625999B1 (ko) 2004-02-26 2006-09-20 삼성에스디아이 주식회사 도너 시트, 상기 도너 시트의 제조방법, 상기 도너 시트를이용한 박막 트랜지스터의 제조방법, 및 상기 도너 시트를이용한 평판 표시장치의 제조방법
JP2005307254A (ja) * 2004-04-20 2005-11-04 Canon Inc 蒸着方法
JP2006086069A (ja) 2004-09-17 2006-03-30 Three M Innovative Properties Co 有機エレクトロルミネッセンス素子及びその製造方法
KR100793355B1 (ko) 2004-10-05 2008-01-11 삼성에스디아이 주식회사 도너 기판의 제조방법 및 유기전계발광표시장치의 제조방법
KR100667069B1 (ko) 2004-10-19 2007-01-10 삼성에스디아이 주식회사 도너 기판 및 그를 사용한 유기전계발광표시장치의 제조방법
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
KR20060109373A (ko) 2005-04-15 2006-10-20 삼성전기주식회사 유기전자소자 제조방법
TWI307612B (en) 2005-04-27 2009-03-11 Sony Corp Transfer method and transfer apparatus
JP2006309995A (ja) 2005-04-27 2006-11-09 Sony Corp 転写用基板および表示装置の製造方法ならびに表示装置
DE602006004913D1 (de) 2005-04-28 2009-03-12 Semiconductor Energy Lab Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung
JPWO2007015465A1 (ja) 2005-08-01 2009-02-19 パイオニア株式会社 有機膜被熱転写体製造方法、有機膜被熱転写体
EP1760776B1 (en) 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
JP4412264B2 (ja) 2005-09-12 2010-02-10 ソニー株式会社 表示装置および表示装置の製造方法
JP4449890B2 (ja) 2005-11-21 2010-04-14 ソニー株式会社 転写用基板および転写方法ならびに表示装置の製造方法
JP2007311093A (ja) * 2006-05-17 2007-11-29 Sony Corp 平面型表示装置、並びに、スペーサ
US7607884B2 (en) * 2006-07-10 2009-10-27 Hayward Gordon Limited Centrifugal pump with mechanical seal arrangement
TWI427702B (zh) 2006-07-28 2014-02-21 半導體能源研究所股份有限公司 顯示裝置的製造方法
US7994021B2 (en) 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7943287B2 (en) 2006-07-28 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
TWI412079B (zh) 2006-07-28 2013-10-11 半導體能源研究所股份有限公司 製造顯示裝置的方法
KR101346246B1 (ko) 2006-08-24 2013-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 제작방법
US7927991B2 (en) 2006-08-25 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8563431B2 (en) 2006-08-25 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7651896B2 (en) 2006-08-30 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8148259B2 (en) 2006-08-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101563237B1 (ko) 2007-06-01 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조장치 및 발광장치 제작방법
KR20090028413A (ko) 2007-09-13 2009-03-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법 및 증착용 기판
KR20090041316A (ko) 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막 방법 및 발광 장치의 제작 방법
US8153201B2 (en) 2007-10-23 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light-emitting device, and evaporation donor substrate
KR20090041314A (ko) 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판 및 발광장치의 제조방법
US8425974B2 (en) 2007-11-29 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Evaporation donor substrate and method for manufacturing light-emitting device
KR101689519B1 (ko) 2007-12-26 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법
US8080811B2 (en) 2007-12-28 2011-12-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing evaporation donor substrate and light-emitting device
WO2009099002A1 (en) 2008-02-04 2009-08-13 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing light-emitting device
WO2009107548A1 (en) 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
US8182863B2 (en) * 2008-03-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device

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Publication number Publication date
US8956709B2 (en) 2015-02-17
JP2009256784A (ja) 2009-11-05
US8182863B2 (en) 2012-05-22
US20120225221A1 (en) 2012-09-06
US20090233006A1 (en) 2009-09-17

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