JP5395476B2 - 発光素子、発光装置及び電子機器 - Google Patents

発光素子、発光装置及び電子機器 Download PDF

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Publication number
JP5395476B2
JP5395476B2 JP2009065377A JP2009065377A JP5395476B2 JP 5395476 B2 JP5395476 B2 JP 5395476B2 JP 2009065377 A JP2009065377 A JP 2009065377A JP 2009065377 A JP2009065377 A JP 2009065377A JP 5395476 B2 JP5395476 B2 JP 5395476B2
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light
emitting element
layer
substance
emitting layer
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Expired - Fee Related
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JP2009065377A
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Japanese (ja)
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JP2009260308A (ja
JP2009260308A5 (enExample
Inventor
信晴 大澤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009065377A 2008-03-18 2009-03-18 発光素子、発光装置及び電子機器 Expired - Fee Related JP5395476B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009065377A JP5395476B2 (ja) 2008-03-18 2009-03-18 発光素子、発光装置及び電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008068943 2008-03-18
JP2008068943 2008-03-18
JP2009065377A JP5395476B2 (ja) 2008-03-18 2009-03-18 発光素子、発光装置及び電子機器

Publications (3)

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JP2009260308A JP2009260308A (ja) 2009-11-05
JP2009260308A5 JP2009260308A5 (enExample) 2012-01-26
JP5395476B2 true JP5395476B2 (ja) 2014-01-22

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US (2) US8278649B2 (enExample)
JP (1) JP5395476B2 (enExample)
TW (1) TWI534242B (enExample)
WO (1) WO2009116547A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130115397A (ko) * 2005-09-02 2013-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 안트라센 유도체
WO2008038607A1 (en) * 2006-09-28 2008-04-03 Semiconductor Energy Laboratory Co., Ltd. Anthracene derivative, and light emitting element, light emitting device, and electronic device using the anthracene derivative
US8835018B2 (en) 2007-04-25 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Organic compound, anthracene derivative, and light-emitting element, light-emitting device, and electronic device in which the anthracene derivative is used
CN101978784B (zh) 2008-03-18 2012-12-05 株式会社半导体能源研究所 发光元件、发光装置及电子装置
WO2010026859A1 (en) * 2008-09-05 2010-03-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US8581237B2 (en) * 2008-12-17 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
EP2398300B1 (en) * 2009-02-10 2017-08-23 Joled Inc. Method for manufacturing light-emitting element, light-emitting element, method for manufacturing light-emitting device, and light-emitting device
CN105742515A (zh) * 2009-05-29 2016-07-06 株式会社半导体能源研究所 发光元件、发光装置、照明装置以及电子设备
JP2011009205A (ja) * 2009-05-29 2011-01-13 Semiconductor Energy Lab Co Ltd 発光素子、発光装置及びその作製方法
KR101691395B1 (ko) * 2009-09-04 2017-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 및 이의 제조방법
JP2011139044A (ja) 2009-12-01 2011-07-14 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器、および照明装置
US8283855B2 (en) * 2010-01-11 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Method for synthesis of anthracene derivative
KR101973207B1 (ko) * 2011-06-23 2019-04-29 삼성디스플레이 주식회사 금속 산화물이 함유된 양극 및 상기 양극을 포함하는 유기발광소자
US9299942B2 (en) 2012-03-30 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic appliance, and lighting device
US9966550B2 (en) * 2014-02-18 2018-05-08 Sharp Kabushiki Kaisha Organic electroluminescent element and organic electroluminescent panel
JP6417632B2 (ja) * 2014-05-13 2018-11-07 パナソニックＩｐマネジメント株式会社 有機発光素子およびその製造方法
KR102055979B1 (ko) * 2017-05-29 2019-12-13 주식회사 엘지화학 유기 발광 소자
WO2020170074A1 (ja) * 2019-02-20 2020-08-27 株式会社半導体エネルギー研究所 発光デバイス、発光装置、電子機器および照明装置

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US649211A (en) * 1899-07-11 1900-05-08 Reed Smokeless Furnace Company Smokeless furnace.
JPH06158038A (ja) 1992-11-17 1994-06-07 Pioneer Electron Corp 有機エレクトロルミネッセンス素子
GB9724682D0 (en) 1997-11-21 1998-01-21 Cambridge Display Tech Ltd Electroluminescent device
US6208075B1 (en) * 1998-11-05 2001-03-27 Eastman Kodak Company Conductive fluorocarbon polymer and method of making same
JP4382961B2 (ja) 2000-05-02 2009-12-16 富士フイルム株式会社 発光素子
TW545080B (en) * 2000-12-28 2003-08-01 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
SG138467A1 (en) * 2000-12-28 2008-01-28 Semiconductor Energy Lab Luminescent device
TW518909B (en) * 2001-01-17 2003-01-21 Semiconductor Energy Lab Luminescent device and method of manufacturing same
TW519770B (en) * 2001-01-18 2003-02-01 Semiconductor Energy Lab Light emitting device and manufacturing method thereof
SG118110A1 (en) * 2001-02-01 2006-01-27 Semiconductor Energy Lab Organic light emitting element and display device using the element
CN101397649B (zh) * 2001-02-01 2011-12-28 株式会社半导体能源研究所 能够将有机化合物沉积在衬底上的装置
US20030010288A1 (en) * 2001-02-08 2003-01-16 Shunpei Yamazaki Film formation apparatus and film formation method
TW582121B (en) * 2001-02-08 2004-04-01 Semiconductor Energy Lab Light emitting device
US7432116B2 (en) * 2001-02-21 2008-10-07 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for film deposition
SG118118A1 (en) * 2001-02-22 2006-01-27 Semiconductor Energy Lab Organic light emitting device and display using the same
US6998487B2 (en) * 2001-04-27 2006-02-14 Lg Chem, Ltd. Double-spiro organic compounds and organic electroluminescent devices using the same
US6603150B2 (en) * 2001-09-28 2003-08-05 Eastman Kodak Company Organic light-emitting diode having an interface layer between the hole-transporting layer and the light-emitting layer
DE60236012D1 (de) * 2001-11-22 2010-05-27 Canon Kk Lichtemissionselement, herstellungsverfahren dafür und lichtemissionsvorrichtung
JP4531342B2 (ja) * 2003-03-17 2010-08-25 株式会社半導体エネルギー研究所 白色有機発光素子および発光装置
TWI363574B (en) * 2003-04-07 2012-05-01 Semiconductor Energy Lab Electronic apparatus
US7862906B2 (en) * 2003-04-09 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Electroluminescent element and light-emitting device
JP2004335122A (ja) * 2003-04-30 2004-11-25 Takasago Internatl Corp 発光素子
JP3984190B2 (ja) 2003-05-30 2007-10-03 Ｔｄｋ株式会社 有機ｅｌ素子
JP4479171B2 (ja) 2003-06-20 2010-06-09 ソニー株式会社 表示素子
JP2005011734A (ja) 2003-06-20 2005-01-13 Sony Corp 表示素子および表示装置
JP4547599B2 (ja) * 2003-10-15 2010-09-22 奇美電子股▲ふん▼有限公司 画像表示装置
US7087320B2 (en) * 2003-11-04 2006-08-08 Eastman Kodak Company Organic element for electroluminescent devices
TW200541401A (en) 2004-02-13 2005-12-16 Idemitsu Kosan Co Organic electroluminescent device
JP2005235403A (ja) 2004-02-17 2005-09-02 Hitachi Displays Ltd 有機・ｅｌ表示装置
JP4393249B2 (ja) 2004-03-31 2010-01-06 株式会社 日立ディスプレイズ 有機発光素子，画像表示装置、及びその製造方法
US7192659B2 (en) * 2004-04-14 2007-03-20 Eastman Kodak Company OLED device using reduced drive voltage
WO2005109542A1 (en) * 2004-05-11 2005-11-17 Lg Chem. Ltd. Organic electronic device
JP5040077B2 (ja) * 2004-07-23 2012-10-03 コニカミノルタホールディングス株式会社 有機エレクトロルミネッセンス素子
JP2006049057A (ja) 2004-08-04 2006-02-16 Hitachi Displays Ltd 有機ｅｌ表示装置
JP4697577B2 (ja) * 2004-08-24 2011-06-08 富士電機ホールディングス株式会社 有機ｅｌ素子
US7803468B2 (en) * 2004-09-29 2010-09-28 Fujifilm Corporation Organic electroluminescent element
KR101215866B1 (ko) * 2004-11-30 2012-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자 및 그를 사용하는 전자 장치
US20070216292A1 (en) * 2004-12-06 2007-09-20 Satoshi Seo Composite Material Including organic Compound And Inorganic Compound Light-Emitting Element And Light-Emitting Device Using The Composite Compound, And Manufacturing Method Of The Light-Emitting Element
JP2006173050A (ja) * 2004-12-20 2006-06-29 Nippon Seiki Co Ltd 有機ｅｌ素子
US8039122B2 (en) 2005-03-28 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Anthracene derivative, material for light emitting element, light emitting element, light emitting device, and electronic device
US7745019B2 (en) * 2005-04-28 2010-06-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device and method of manufacturing light emitting element
KR100672535B1 (ko) * 2005-07-25 2007-01-24 엘지전자 주식회사 유기 ｅｌ 소자 및 그 제조방법
KR100806812B1 (ko) * 2005-07-25 2008-02-25 엘지.필립스 엘시디 주식회사 유기 ｅｌ 소자 및 그 제조방법
JP5041766B2 (ja) * 2005-09-02 2012-10-03 株式会社半導体エネルギー研究所 アントラセン誘導体、アントラセン誘導体を用いた発光素子、発光装置及び電子機器
KR20130115397A (ko) * 2005-09-02 2013-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 안트라센 유도체
JP2007096023A (ja) * 2005-09-29 2007-04-12 Canon Inc 有機発光素子
US9666826B2 (en) * 2005-11-30 2017-05-30 Global Oled Technology Llc Electroluminescent device including an anthracene derivative
JP2007227117A (ja) 2006-02-23 2007-09-06 Sony Corp 有機電界発光素子
JP4943199B2 (ja) 2006-03-21 2012-05-30 株式会社半導体エネルギー研究所 オキサジアゾール誘導体
US9112170B2 (en) 2006-03-21 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
KR101384785B1 (ko) * 2006-06-01 2014-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자, 발광장치 및 전자기기
EP1863105B1 (en) * 2006-06-02 2020-02-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
JP4833748B2 (ja) * 2006-06-14 2011-12-07 パナソニック電工株式会社 有機発光素子
EP1876658A3 (en) * 2006-07-04 2014-06-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US7902742B2 (en) * 2006-07-04 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
DE602007008337D1 (de) * 2006-10-24 2010-09-23 Semiconductor Energy Lab Anthrazenderivat und lichtemittierendes Element, lichtemittierende Vorrichtung und elektronische Vorrichtung mit Anthrazenderivat
KR101426717B1 (ko) * 2006-12-04 2014-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치 및 전자 기기
US9397308B2 (en) * 2006-12-04 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
EP1973386B8 (en) * 2007-03-23 2016-01-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic device
US8835018B2 (en) * 2007-04-25 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Organic compound, anthracene derivative, and light-emitting element, light-emitting device, and electronic device in which the anthracene derivative is used
JP5153235B2 (ja) * 2007-07-03 2013-02-27 キヤノン株式会社 有機発光素子
JP5277588B2 (ja) * 2007-08-21 2013-08-28 東ソー株式会社 有機ｅｌ素子
JP5530608B2 (ja) * 2007-09-13 2014-06-25 株式会社半導体エネルギー研究所 発光素子および発光装置
US8384283B2 (en) * 2007-09-20 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US8115382B2 (en) * 2007-09-20 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device, comprising controlled carrier transport
US9876187B2 (en) * 2007-09-27 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic appliance
US8877350B2 (en) * 2007-12-11 2014-11-04 Global Oled Technology Llc White OLED with two blue light-emitting layers
EP2075860A3 (en) * 2007-12-28 2013-03-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
EP2091097A3 (en) * 2008-02-13 2013-05-15 Semiconductor Energy Laboratory Co, Ltd. Light-emitting element, light-emitting device, and electronic device
CN101978784B (zh) * 2008-03-18 2012-12-05 株式会社半导体能源研究所 发光元件、发光装置及电子装置

Also Published As

Publication number Publication date
TWI534242B (zh) 2016-05-21
JP2009260308A (ja) 2009-11-05
US8278649B2 (en) 2012-10-02
US20090236590A1 (en) 2009-09-24
TW200946644A (en) 2009-11-16
WO2009116547A1 (en) 2009-09-24
US9224960B2 (en) 2015-12-29
US20130009141A1 (en) 2013-01-10

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