JP5388312B2 - ゲルマニウム構造体とその形成方法、トランジスタ構造体の形成方法 - Google Patents
ゲルマニウム構造体とその形成方法、トランジスタ構造体の形成方法 Download PDFInfo
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- JP5388312B2 JP5388312B2 JP2011231718A JP2011231718A JP5388312B2 JP 5388312 B2 JP5388312 B2 JP 5388312B2 JP 2011231718 A JP2011231718 A JP 2011231718A JP 2011231718 A JP2011231718 A JP 2011231718A JP 5388312 B2 JP5388312 B2 JP 5388312B2
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- 238000000034 method Methods 0.000 title claims description 104
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 101
- 150000004767 nitrides Chemical class 0.000 claims description 66
- 229910052732 germanium Inorganic materials 0.000 claims description 55
- 125000006850 spacer group Chemical group 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 50
- 239000004020 conductor Substances 0.000 claims description 48
- 239000012212 insulator Substances 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 43
- 238000002513 implantation Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 27
- 239000007943 implant Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 38
- 239000000463 material Substances 0.000 description 23
- 230000005669 field effect Effects 0.000 description 17
- 238000000151 deposition Methods 0.000 description 16
- 230000008021 deposition Effects 0.000 description 16
- 239000000203 mixture Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910000078 germane Inorganic materials 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- OXTURSYJKMYFLT-UHFFFAOYSA-N dichlorogermane Chemical group Cl[GeH2]Cl OXTURSYJKMYFLT-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Description
(1)第1絶縁体表面と、前記第1絶縁体表面に隣接する第2絶縁体表面と、 前記第1絶縁体表面に結合された球状の半導体構造体と、を有し、前記半導体構造体が前記第2絶縁体表面上には形成されない、半導体構造体。
(2)前記半導体構造体がシリコン・ゲルマニウムからなる、上記(1)に記載の構造体。
(3)前記半導体構造体がゲルマニウムからなる、上記(1)に記載の構造体。
(4)前記半導体構造体と前記第1絶縁体表面との間の界面に自然酸化物が存在しない、上記(1)に記載の構造体。
(5)前記半導体構造体の両側面が前記第2絶縁体表面を覆って広がる、上記(1)に記載の構造体。
(6)窒化物側壁スペーサと、前記窒化物側壁スペーサに隣接し、前記窒化物側壁スペーサに対して或る角度をなすように配置された酸化物表面と、前記窒化物側壁スペーサに結合され、前記酸化物表面上には形成されていない球状のゲルマニウム構造体と、を有するゲルマニウム構造体。
(7)前記ゲルマニウム構造体がシリコン・ゲルマニウムからなる、上記(6)に記載の構造体。
(8)前記ゲルマニウム構造体がゲルマニウムからなる、上記(6)に記載の構造体。
(9)前記球状のゲルマニウム構造体と前記窒化物側壁スペーサとの間の界面に自然酸化物が存在しない、上記(6)に記載の構造体。
(10)前記ゲルマニウム構造体の側面が前記酸化物表面の上まで広がる、上記(6)に記載の構造体。
(11)半導体構造体を選択的に形成する方法であって、第2絶縁体表面に隣接する第1絶縁体表面を準備するステップと、前記第1絶縁体表面から自然酸化物を除去するステップと、前記第1絶縁体表面及び前記第2絶縁体表面を加熱するステップと、前記第1絶縁体表面及び前記第2絶縁体表面を半導体含有ガスに曝すステップと、を含む方法。
(12)前記曝すステップの間に、半導体が前記第1絶縁体表面上にのみ形成され、前記第2絶縁体表面上には形成されない、上記(11)に記載の方法。
(13)前記半導体含有ガスがゲルマン(GeH4)又はジクロロゲルマン(GeH2Cl2)を含む、上記(11)に記載の方法。
(14)前記曝すステップが、前記半導体含有ガスを約500℃から900℃の間のウェハ温度において10Torrから300Torrの間の圧力で供給することを含む、上記(11)に記載の方法。
(15)前記自然酸化物を前記除去するステップが、化学的酸化物除去プロセスを含む、上記(11)に記載の方法。
(16)前記自然酸化物を前記除去するステップが、前記自然酸化物をHF及びNH3ガスに曝すものであることを含む、上記(11)に記載の方法。
(17) 前記HFが前記NH3の2倍の流速で供給される、上記(16)に記載の方法。
(18) 前記HF及びNH3が、約1mTorrから15mTorrの間の圧力で約5秒から約300秒の間の時間にわたって供給される、上記(16)に記載の方法。
(19)ゲルマニウム構造体を選択的に形成する方法であって、酸化物表面に隣接する窒化物表面を準備するステップと、前記窒化物表面から自然酸化物を無水の化学的酸化物除去プロセス中で除去するステップと、前記窒化物表面と前記酸化物表面を加熱するステップと、前記酸化物表面と前記窒化物表面をゲルマニウム含有ガスに曝すステップと、を含む方法。
(20)前記曝すステップの間に、ゲルマニウムが前記窒化物表面上にのみ形成され、前記酸化物表面上には形成されない、上記(19)に記載の方法。
(21)前記ゲルマニウム含有ガスが、ゲルマン(GeH4)又はジクロロゲルマン(GeH2Cl2)を含む、上記(19)に記載の方法。
(22)前記曝すステップが、前記ゲルマニウム含有ガスを約500℃から900℃の間のウェハ温度において約10Torrから300Torrの間の圧力で供給することを含む、上記(19)に記載の方法。
(23)前記自然酸化物を前記除去するステップが、前記自然酸化物をHF及びNH3ガスに曝すものであることを含む、上記(19)に記載の方法。
(24)前記HFが前記NH3の2倍の流速で供給される、上記(23)に記載の方法。
(25)前記HF及びNH3が、約1mTorrから15mTorrの間の圧力で約5秒から約300秒の間の時間にわたって供給される、上記(23)に記載の方法。
(26)トランジスタ構造体を選択的に形成する方法であって、第1絶縁体表面を基板上に形成するステップと、ゲート導体構造体を前記第1絶縁体表面上にパターニングするステップと、ソース/ドレインのエクステンション注入を前記ゲート導体構造体に隣接する前記基板の領域に行うステップと、第2絶縁体スペーサを前記ゲート導体構造体に隣接して形成するステップと、自然酸化物を前記第2絶縁体スペーサから除去するステップと、前記トランジスタ構造体を加熱するステップと、前記トランジスタ構造体を半導体含有ガスに曝して、前記第2絶縁体スペーサ上に選択的に半導体構造体を形成するステップと、ソース及びドレインの注入を前記基板と前記ゲート導体構造体の中に行うステップと、 前記半導体構造体を除去するステップと、を含む方法。
(27)前記曝すステップの間に、前記半導体構造体が前記第2絶縁体スペーサ上にだけ形成され、前記第1絶縁体表面上には形成されない、上記(26)に記載の方法。
(28)前記半導体含有ガスが、ゲルマン(GeH4)又はジクロロゲルマン(GeH2Cl2)を含む、上記(26)に記載の方法。
(29)前記曝すステップが、前記半導体含有ガスを約500℃から900℃の間のウェハ温度において約10Torrから300Torrの間の圧力で供給するものであることを含む、上記(26)に記載の方法。
(30)前記自然酸化物を前記除去するステップが、化学的酸化物除去プロセスを含む、上記(26)に記載の方法。
(31)前記自然酸化物を前記除去するステップが、前記自然酸化物をHFとNH3ガスに曝すことを含む、上記(26)に記載の方法。
(32)前記HFが前記NH3の2倍の流速で供給される、上記(31)に記載の方法。
(33)前記HF及びNH3が、約1mTorrから15mTorrの間の圧力で約5秒から約300秒の間の時間にわたって供給される、上記(31)に記載の方法。
(34)トランジスタ構造体を選択的に形成する方法であって、基板上に酸化物表面を形成するステップと、前記酸化物表面の上にゲート導体構造体をパターニングするステップと、ソース/ドレインのエクステンション注入を、前記ゲート導体構造体に隣接する前記基板の領域に行うステップと、前記ゲート導体構造体に隣接する窒化物スペーサを形成するステップと、前記窒化物スペーサから自然酸化物を除去するステップと、前記トランジスタ構造体を加熱するステップと、前記トランジスタ構造体をゲルマニウム含有ガスに曝して、前記窒化物スペーサ上にゲルマニウム構造体を選択的に形成するステップと、ソース及びドレインの注入を前記基板及び前記ゲート導体構造体に行うステップと、前記ゲルマニウム構造体を除去するステップと、を含む方法。
(35)前記曝すステップの間に、前記ゲルマニウム構造体が前記窒化物スペーサ上にだけ形成され、前記酸化物表面上には形成されない、上記(34)に記載の方法。
(36)前記ゲルマニウム含有ガスが、ゲルマン(GeH4)又はジクロロゲルマン(GeH2Cl2)を含む、上記(34)に記載の方法。
(37)前記曝すステップが、前記ゲルマニウム含有ガスを約500℃から900℃の間のウェハ温度において約10Torrから300Torrの間の圧力で供給することを含む、上記(34)に記載の方法。
(38)前記自然酸化物を前記除去するステップが、化学的酸化物除去プロセスを含む、上記(34)に記載の方法。
(39)前記自然酸化物を前記除去するステップが、前記自然酸化物をHF及びNH3ガスに曝すことを含む、上記(34)に記載の方法。
(40)前記HFが前記NH3の2倍の流速で供給される、上記(39)に記載の方法。
(41)前記HF及びNH3が、約1mTorrから15mTorrの間の圧力で約5秒から約300秒の間の時間にわたって供給される、上記(39)に記載の方法。
Claims (4)
- 窒化物側壁スペーサと、
前記窒化物側壁スペーサに隣接し、前記窒化物側壁スペーサに対して或る角度をなすように配置された酸化物表面と、
前記窒化物側壁スペーサに結合され、前記酸化物表面上には形成されていない球状のゲルマニウム構造体と、
を有するゲルマニウム構造体。 - ゲルマニウム構造体を選択的に形成する方法であって、
酸化物表面に隣接する窒化物表面を準備するステップと、
前記窒化物表面から自然酸化物をHF及びNH3のガスを用いた無水の化学的酸化物除去(COR)プロセス中で除去するステップと、
前記窒化物表面と前記酸化物表面を加熱するステップと、
前記酸化物表面と前記自然酸化物の除去後の前記窒化物表面をゲルマニウム含有ガスに曝すことにより前記窒化物表面にのみ選択的にゲルマニウムを形成するステップと、を含む方法。 - トランジスタ構造体を選択的に形成する方法であって、
第1絶縁体表面を基板上に形成するステップと、
ゲート導体構造体を前記第1絶縁体表面上にパターニングするステップと、
ソース及びドレインのエクステンション注入を前記ゲート導体構造体に隣接する前記基板の領域に行うステップと、
第2絶縁体スペーサを前記ゲート導体構造体に隣接して形成するステップと、
自然酸化物を前記第2絶縁体スペーサから除去するステップと、
前記トランジスタ構造体を加熱するステップと、
前記トランジスタ構造体を半導体含有ガスに曝して、前記第2絶縁体スペーサ上に選択的に半導体構造体を形成するステップと、
ソース及びドレインの注入を前記基板と前記ゲート導体構造体の中に行うステップと、
前記半導体構造体を除去するステップと、を含む方法。 - トランジスタ構造体を選択的に形成する方法であって、
基板上に酸化物表面を形成するステップと、
前記酸化物表面の上にゲート導体構造体をパターニングするステップと、
ソース及びドレインのエクステンション注入を、前記ゲート導体構造体に隣接する前記基板の領域に行うステップと、
前記ゲート導体構造体に隣接する窒化物スペーサを形成するステップと、
前記窒化物スペーサから自然酸化物を除去するステップと、
前記トランジスタ構造体を加熱するステップと、
前記トランジスタ構造体をゲルマニウム含有ガスに曝して、前記窒化物スペーサ上にゲルマニウム構造体を選択的に形成するステップと、
ソース及びドレインの注入を前記基板及び前記ゲート導体構造体に行うステップと、
前記ゲルマニウム構造体を除去するステップと、を含む方法。
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