TW200713464A - Selective deposition of germanium spacers on nitride - Google Patents
Selective deposition of germanium spacers on nitrideInfo
- Publication number
- TW200713464A TW200713464A TW095100790A TW95100790A TW200713464A TW 200713464 A TW200713464 A TW 200713464A TW 095100790 A TW095100790 A TW 095100790A TW 95100790 A TW95100790 A TW 95100790A TW 200713464 A TW200713464 A TW 200713464A
- Authority
- TW
- Taiwan
- Prior art keywords
- nitride
- germanium
- selective deposition
- oxide
- spacers
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title abstract 4
- 229910052732 germanium Inorganic materials 0.000 title abstract 3
- 230000008021 deposition Effects 0.000 title 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
- H01L2224/10125—Reinforcing structures
- H01L2224/10126—Bump collar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13023—Disposition the whole bump connector protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/905,587 US7705385B2 (en) | 2005-09-12 | 2005-09-12 | Selective deposition of germanium spacers on nitride |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200713464A true TW200713464A (en) | 2007-04-01 |
Family
ID=37855727
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095100790A TW200713464A (en) | 2005-09-12 | 2006-01-09 | Selective deposition of germanium spacers on nitride |
TW102132073A TWI496221B (zh) | 2005-09-12 | 2006-01-09 | 半導體結構與鍺結構 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102132073A TWI496221B (zh) | 2005-09-12 | 2006-01-09 | 半導體結構與鍺結構 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7705385B2 (zh) |
JP (2) | JP5270067B2 (zh) |
CN (1) | CN100570884C (zh) |
TW (2) | TW200713464A (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7687804B2 (en) * | 2008-01-08 | 2010-03-30 | International Business Machines Corporation | Method for fabricating a semiconductor structures and structures thereof |
US8580646B2 (en) * | 2010-11-18 | 2013-11-12 | International Business Machines Corporation | Method of fabricating field effect transistors with low k sidewall spacers |
KR20160053001A (ko) * | 2014-10-30 | 2016-05-13 | 삼성디스플레이 주식회사 | 투명 표시 기판, 투명 표시 장치 및 투명 표시 장치의 제조 방법 |
US10037923B1 (en) | 2017-04-19 | 2018-07-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming transistor by selectively growing gate spacer |
CN109309006B (zh) * | 2017-07-27 | 2021-10-15 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
JP7221187B2 (ja) * | 2019-09-30 | 2023-02-13 | 東京エレクトロン株式会社 | 成膜方法、及び成膜装置 |
Family Cites Families (29)
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JPS5624925A (en) * | 1979-08-08 | 1981-03-10 | Hitachi Ltd | Selective growth of silicon |
JPS5854684A (ja) | 1981-09-08 | 1983-03-31 | テキサス・インスツルメンツ・インコ−ポレイテツド | 太陽エネルギ−変換装置 |
JPS63239934A (ja) * | 1987-03-27 | 1988-10-05 | Canon Inc | 半導体基材の製造方法 |
JPH01157517A (ja) * | 1987-08-24 | 1989-06-20 | Canon Inc | 結晶の形成方法 |
US5066616A (en) * | 1989-06-14 | 1991-11-19 | Hewlett-Packard Company | Method for improving photoresist on wafers by applying fluid layer of liquid solvent |
US5153145A (en) | 1989-10-17 | 1992-10-06 | At&T Bell Laboratories | Fet with gate spacer |
US5202284A (en) * | 1989-12-01 | 1993-04-13 | Hewlett-Packard Company | Selective and non-selective deposition of Si1-x Gex on a Si subsrate that is partially masked with SiO2 |
TW203148B (zh) | 1991-03-27 | 1993-04-01 | American Telephone & Telegraph | |
US5282925A (en) | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
US5721443A (en) | 1995-07-13 | 1998-02-24 | Micron Technology, Inc. | NMOS field effect transistors and methods of forming NMOS field effect transistors |
US5723352A (en) | 1995-08-03 | 1998-03-03 | Taiwan Semiconductor Manufacturing Company | Process to optimize performance and reliability of MOSFET devices |
US5719424A (en) | 1995-10-05 | 1998-02-17 | Micron Technology, Inc. | Graded LDD implant process for sub-half-micron MOS devices |
US6027957A (en) * | 1996-06-27 | 2000-02-22 | University Of Maryland | Controlled solder interdiffusion for high power semiconductor laser diode die bonding |
US6074951A (en) | 1997-05-29 | 2000-06-13 | International Business Machines Corporation | Vapor phase etching of oxide masked by resist or masking material |
US6242785B1 (en) * | 1999-01-26 | 2001-06-05 | Advanced Micro Devices, Inc. | Nitride based sidewall spaces for submicron MOSFETs |
US6462414B1 (en) * | 1999-03-05 | 2002-10-08 | Altera Corporation | Integrated circuit package utilizing a conductive structure for interlocking a conductive ball to a ball pad |
US6617226B1 (en) * | 1999-06-30 | 2003-09-09 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
US6570251B1 (en) * | 1999-09-02 | 2003-05-27 | Micron Technology, Inc. | Under bump metalization pad and solder bump connections |
KR100431295B1 (ko) * | 2001-10-12 | 2004-05-12 | 주식회사 하이닉스반도체 | 반도체소자의 플러그 형성방법 |
KR100406537B1 (ko) * | 2001-12-03 | 2003-11-20 | 주식회사 하이닉스반도체 | 반도체장치의 제조 방법 |
US6617619B1 (en) * | 2002-02-04 | 2003-09-09 | Newport Fab, Llc | Structure for a selective epitaxial HBT emitter |
KR100510518B1 (ko) * | 2003-01-30 | 2005-08-26 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치의 패키지 방법 |
TWI225899B (en) | 2003-02-18 | 2005-01-01 | Unitive Semiconductor Taiwan C | Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer |
CN100533683C (zh) * | 2003-04-22 | 2009-08-26 | 东京毅力科创株式会社 | 硅氧化膜的去除方法 |
KR100539278B1 (ko) * | 2003-09-22 | 2005-12-27 | 삼성전자주식회사 | 코발트 실리사이드막 형성 방법 및 반도체 장치의 제조방법. |
US7247569B2 (en) * | 2003-12-02 | 2007-07-24 | International Business Machines Corporation | Ultra-thin Si MOSFET device structure and method of manufacture |
JP4143584B2 (ja) * | 2004-09-01 | 2008-09-03 | 株式会社東芝 | 半導体装置の製造方法 |
US7338894B2 (en) * | 2005-01-26 | 2008-03-04 | Freescale Semiconductor, Inc. | Semiconductor device having nitridated oxide layer and method therefor |
US20070039924A1 (en) * | 2005-08-18 | 2007-02-22 | Tokyo Electron Limited | Low-temperature oxide removal using fluorine |
-
2005
- 2005-09-12 US US10/905,587 patent/US7705385B2/en not_active Expired - Fee Related
-
2006
- 2006-01-06 JP JP2006001706A patent/JP5270067B2/ja not_active Expired - Fee Related
- 2006-01-09 TW TW095100790A patent/TW200713464A/zh unknown
- 2006-01-09 TW TW102132073A patent/TWI496221B/zh not_active IP Right Cessation
- 2006-01-12 CN CNB2006100012856A patent/CN100570884C/zh not_active Expired - Fee Related
-
2008
- 2008-06-09 US US12/135,245 patent/US7888241B2/en not_active Expired - Fee Related
-
2010
- 2010-10-19 US US12/907,186 patent/US8900961B2/en not_active Expired - Fee Related
-
2011
- 2011-10-21 JP JP2011231718A patent/JP5388312B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8900961B2 (en) | 2014-12-02 |
CN100570884C (zh) | 2009-12-16 |
CN1933175A (zh) | 2007-03-21 |
JP5270067B2 (ja) | 2013-08-21 |
JP2012069964A (ja) | 2012-04-05 |
JP2007081361A (ja) | 2007-03-29 |
US20080242041A1 (en) | 2008-10-02 |
TW201403719A (zh) | 2014-01-16 |
US7888241B2 (en) | 2011-02-15 |
TWI496221B (zh) | 2015-08-11 |
US20070059894A1 (en) | 2007-03-15 |
JP5388312B2 (ja) | 2014-01-15 |
US20110034000A1 (en) | 2011-02-10 |
US7705385B2 (en) | 2010-04-27 |
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