JP5382289B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP5382289B2 JP5382289B2 JP2008080041A JP2008080041A JP5382289B2 JP 5382289 B2 JP5382289 B2 JP 5382289B2 JP 2008080041 A JP2008080041 A JP 2008080041A JP 2008080041 A JP2008080041 A JP 2008080041A JP 5382289 B2 JP5382289 B2 JP 5382289B2
- Authority
- JP
- Japan
- Prior art keywords
- gain
- emitting device
- layer
- light emitting
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005253 cladding Methods 0.000 claims description 50
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 189
- 238000000034 method Methods 0.000 description 33
- 238000004519 manufacturing process Methods 0.000 description 25
- 239000000758 substrate Substances 0.000 description 21
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 230000008033 biological extinction Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000869 ion-assisted deposition Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008080041A JP5382289B2 (ja) | 2008-03-26 | 2008-03-26 | 発光装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008080041A JP5382289B2 (ja) | 2008-03-26 | 2008-03-26 | 発光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009238828A JP2009238828A (ja) | 2009-10-15 |
| JP2009238828A5 JP2009238828A5 (enExample) | 2012-04-05 |
| JP5382289B2 true JP5382289B2 (ja) | 2014-01-08 |
Family
ID=41252465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008080041A Expired - Fee Related JP5382289B2 (ja) | 2008-03-26 | 2008-03-26 | 発光装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5382289B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4962743B2 (ja) | 2008-12-19 | 2012-06-27 | セイコーエプソン株式会社 | 発光装置 |
| JP5447794B2 (ja) | 2009-05-08 | 2014-03-19 | セイコーエプソン株式会社 | 発光装置 |
| JP5447799B2 (ja) | 2009-06-18 | 2014-03-19 | セイコーエプソン株式会社 | 発光装置およびその駆動方法、並びに、プロジェクター |
| JP5387845B2 (ja) * | 2009-11-20 | 2014-01-15 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
| JP6040790B2 (ja) | 2013-02-01 | 2016-12-07 | セイコーエプソン株式会社 | 発光装置、スーパールミネッセントダイオード、およびプロジェクター |
| JP6103202B2 (ja) * | 2013-02-27 | 2017-03-29 | セイコーエプソン株式会社 | 半導体発光装置、スーパールミネッセントダイオード、およびプロジェクター |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2770496B2 (ja) * | 1989-11-21 | 1998-07-02 | 三菱電機株式会社 | 光増幅器,スーパールミネッセントダイオード,光集積回路およびこれらの製造方法 |
| JPH0497206A (ja) * | 1990-08-10 | 1992-03-30 | Anritsu Corp | 半導体光素子 |
| JP2545717B2 (ja) * | 1990-09-25 | 1996-10-23 | 工業技術院長 | フリンジ発生装置及びこれを用いた論理演算装置 |
| JP2720635B2 (ja) * | 1991-06-27 | 1998-03-04 | 日本電気株式会社 | 半導体発光素子の製造方法 |
| JPH0669491A (ja) * | 1992-08-18 | 1994-03-11 | Fujitsu Ltd | 光送受信装置 |
| JPH0974245A (ja) * | 1995-09-06 | 1997-03-18 | Mitsubishi Electric Corp | 半導体光増幅器 |
| JP3393634B2 (ja) * | 1996-08-28 | 2003-04-07 | 日本電信電話株式会社 | スーパールミネッセントダイオード |
| JP4105403B2 (ja) * | 2001-04-26 | 2008-06-25 | 日本オプネクスト株式会社 | 半導体光集積素子の製造方法 |
| JP2003060285A (ja) * | 2001-08-10 | 2003-02-28 | Furukawa Electric Co Ltd:The | 光集積デバイス |
| JP2005129824A (ja) * | 2003-10-27 | 2005-05-19 | Opnext Japan Inc | 半導体レーザ装置 |
| JP2006032534A (ja) * | 2004-07-14 | 2006-02-02 | Nippon Telegr & Teleph Corp <Ntt> | 発光ダイオード |
| JP2007184557A (ja) * | 2005-12-05 | 2007-07-19 | Fujifilm Corp | 半導体発光素子および該素子を備えた光源装置および光断層画像化装置 |
| JP2007165689A (ja) * | 2005-12-15 | 2007-06-28 | Fujifilm Corp | スーパールミネッセントダイオード |
| JP2008053501A (ja) * | 2006-08-25 | 2008-03-06 | Opnext Japan Inc | 集積光デバイスおよびその製造方法 |
-
2008
- 2008-03-26 JP JP2008080041A patent/JP5382289B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009238828A (ja) | 2009-10-15 |
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