JP5377760B2 - 成膜設備および成膜方法 - Google Patents
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (19)
- 真空化が可能であり、基板(30)を受けることが意図された少なくとも1つの受容器(10)と、少なくとも1つの気体前駆体を前記受容器(10)の中に導入できるようにするための少なくとも1つの気体供給装置(20、21、22)と、少なくとも1つの加熱可能な活性化要素(41)を含み、端部が保持要素(43)に固定点(42)で固定された少なくとも1つの活性化装置(40)と、を備える成膜設備(1)であって、
前記活性化要素(41)は、第一の加熱装置(107)と少なくとも1つの第二の加熱装置(50)によって加熱することができ、前記第一の加熱装置(107)で前記活性化要素(41)の前記長さ方向の範囲全体にわたって均一なエネルギー入力を提供し、前記第二の加熱装置で前記活性化要素(41)の前記長さ方向の範囲全体にわたって変化するエネルギー入力を提供することが可能となり、それによって、前記第二の加熱装置の動作を受けて、前記活性化要素のうち少なくとも1つの長さ方向に沿った部分における温度を1300℃より高くすることができることを特徴とする成膜設備。 - 前記第一の加熱装置(107)は、抵抗加熱を含むことを特徴とする、請求項1に記載の成膜設備。
- 前記第二の加熱装置(50)の前記エネルギー入力は前記活性化要素(41)の前記固定点(42)における領域に限定することができ、それによって前記保持要素(43)による除熱が補償されることを特徴とする、請求項1と請求項2のいずれか一項に記載の成膜設備。
- 前記第二の加熱装置(50)は、前記保持要素(43)へとエネルギー入力を供給するように設計されていることを特徴とする、請求項1から請求項3のいずれか一項に記載の成膜設備。
- 前記第二の加熱装置(50)は、前記活性化要素(41)および/または前記保持要素(43)へと放射エネルギー(65、71、82)を導入するように設計されることを特徴とする、請求項1から請求項4のいずれか一項に記載の成膜設備。
- 前記第二の加熱装置(50)は、粒子ビーム(65)を発生するための装置(60)を含むことを特徴とする、請求項1から請求項5のいずれか一項に記載の成膜設備。
- 前記第二の加熱装置(50)は、プラズマ(71)を発生するための装置(70、73、74)を含むことを特徴とする、請求項1から請求項6のいずれか一項に記載の成膜設備。
- 前記第二の加熱装置(50)は、交番電界および/または磁界を発生するための装置(51)を含むことを特徴とする、請求項1から請求項7のいずれか一項に記載の成膜設備。
- 前記第二の加熱装置は制御装置(90)を含み、そこに前記第二の加熱装置(50)の有効範囲内の実際の温度の数値(T2)を供給できることを特徴とする、請求項1から請求項8のいずれか一項に記載の成膜設備。
- 前記制御装置(90)に前記第二の加熱装置(50)の有効範囲外の実際の温度の数値(T1)を供給できることを特徴とする、請求項9に記載の成膜設備。
- 基板(30)の被膜(105)を生成する方法であって、前記基板は真空化可能な受容
器(10)の中に導入され、少なくとも1つの気体前駆体が少なくとも1つの気体供給装置(20、21、22)によって前記受容器(10)の中に導入され、少なくとも1つの活性化装置(40)によって活性化され、前記活性化装置(40)は、その端部が保持要素(43)に固定点(42)において固定される少なくとも1つの加熱された活性化要素(41)を含み、
前記活性化要素(41)は、第一の加熱装置(107)と少なくとも1つの第二の加熱装置(50)によって加熱され、前記第一の加熱装置(107)により前記活性化要素(41)の前記長さ方向の範囲全体にわたって均一なエネルギー入力を提供し、前記第二の加熱装置(50)により前記活性化要素(41)の前記長さ方向の範囲全体にわたって変化するエネルギー入力を提供し、それによって、前記第二の加熱装置の動作を受けて、前記活性化要素のうち少なくとも1つの長さ方向に沿った部分における温度を1300℃より高くすることができることを特徴とする方法。 - 前記活性化要素(41)の中を電流が流れる、請求項11に記載の方法。
- 前記第二の加熱装置(50)のエネルギー入力は前記活性化要素(41)の前記固定点(42)における領域に限定することができ、それによって前記保持要素(43)による除熱が補償される、請求項11と請求項12のいずれか一項に記載の方法。
- 前記第二の加熱装置(50)は、前記保持要素(43)へとエネルギー入力を供給する、請求項11から請求項13のいずれか一項に記載の方法。
- 電磁放射が前記活性化要素(41)および/または前記保持要素(43)へと導入される、請求項11から請求項14のいずれか一項に記載の方法。
- 粒子ビーム(65)が前記活性化要素(41)および/または前記保持要素(43)に向けられる、請求項11から請求項15のいずれか一項に記載の方法。
- プラズマ(71)が前記活性化要素(41)および/または前記保持要素(43)に作用する、請求項11から請求項16のいずれか一項に記載の方法。
- 交番電界および/または磁界が前記活性化要素(41)および/または前記保持要素(43)に作用する、請求項11から請求項16のいずれか一項に記載の方法。
- 前記第二の加熱装置のエネルギー入力が制御され、それによって前記活性化要素(41)の温度がその長さ方向の範囲に沿って実質的に一定である、請求項11から請求項18のいずれか一項に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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DE102009023467.5 | 2009-06-02 | ||
DE102009023467A DE102009023467B4 (de) | 2009-06-02 | 2009-06-02 | Beschichtungsanlage und -verfahren |
PCT/EP2010/056624 WO2010139542A1 (de) | 2009-06-02 | 2010-05-13 | Beschichtungsanlage und beschichtungsverfahren |
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JP2012529165A JP2012529165A (ja) | 2012-11-15 |
JP5377760B2 true JP5377760B2 (ja) | 2013-12-25 |
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DE102008044025A1 (de) * | 2008-11-24 | 2010-08-05 | Cemecon Ag | Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD |
DE102009023471B4 (de) * | 2009-06-02 | 2012-08-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Beschichtungsanlage und -verfahren |
JP5792215B2 (ja) * | 2013-03-08 | 2015-10-07 | 国立大学法人東北大学 | ホットワイヤ式処理装置 |
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JPS60221395A (ja) * | 1984-04-19 | 1985-11-06 | Yoshio Imai | ダイヤモンド薄膜の製造方法 |
JPH0292895A (ja) * | 1988-09-29 | 1990-04-03 | Kawasaki Steel Corp | 熱フィラメントcvd法によるダイヤモンドあるいはダイヤモンド状薄膜の合成方法 |
US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
JP4275405B2 (ja) * | 2000-08-22 | 2009-06-10 | 三井化学株式会社 | 半導体レーザ素子の製造方法 |
JP4435395B2 (ja) * | 2000-09-14 | 2010-03-17 | キヤノンアネルバ株式会社 | 発熱体cvd装置 |
KR100382879B1 (ko) * | 2000-09-22 | 2003-05-09 | 일진나노텍 주식회사 | 탄소 나노튜브 합성 방법 및 이에 이용되는 탄소 나노튜브합성장치. |
KR100460080B1 (ko) * | 2001-12-11 | 2004-12-08 | (주)한백 | 다결정 실리콘 박막의 제조 방법 및 제조 장치 |
JP3840147B2 (ja) * | 2002-06-21 | 2006-11-01 | キヤノン株式会社 | 成膜装置、成膜方法およびそれを用いた電子放出素子、電子源、画像形成装置の製造方法 |
JP3787816B2 (ja) * | 2002-10-04 | 2006-06-21 | キヤノンアネルバ株式会社 | 発熱体cvd装置 |
JP4691625B2 (ja) * | 2003-03-24 | 2011-06-01 | 独立行政法人科学技術振興機構 | カーボンナノ構造物の高効率合成方法、及び装置 |
WO2006054393A1 (ja) * | 2004-11-22 | 2006-05-26 | Tokyo University Of Agriculture And Technology | 薄膜製造方法及び薄膜製造装置 |
KR100688837B1 (ko) * | 2005-05-12 | 2007-03-02 | 삼성에스디아이 주식회사 | 결정질 실리콘 증착을 위한 화학기상증착장치 |
US20070128861A1 (en) * | 2005-12-05 | 2007-06-07 | Kim Myoung S | CVD apparatus for depositing polysilicon |
JP2009235426A (ja) * | 2006-06-22 | 2009-10-15 | Japan Advanced Institute Of Science & Technology Hokuriku | 触媒化学気相堆積法における触媒体の変性防止法 |
TW200811310A (en) * | 2006-08-23 | 2008-03-01 | Kinik Co | Apparatus for chemical gas phase thin film sedimentation |
JP4818082B2 (ja) * | 2006-11-30 | 2011-11-16 | 三洋電機株式会社 | cat−CVD装置及びフィラメント交換方法 |
US20090023274A1 (en) * | 2007-07-07 | 2009-01-22 | Xinmin Cao | Hybrid Chemical Vapor Deposition Process Combining Hot-Wire CVD and Plasma-Enhanced CVD |
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2010
- 2010-05-13 WO PCT/EP2010/056624 patent/WO2010139542A1/de active Application Filing
- 2010-05-13 JP JP2012513531A patent/JP5377760B2/ja not_active Expired - Fee Related
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Also Published As
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DE102009023467A1 (de) | 2010-12-09 |
US20120107501A1 (en) | 2012-05-03 |
WO2010139542A1 (de) | 2010-12-09 |
DE102009023467B4 (de) | 2011-05-12 |
JP2012529165A (ja) | 2012-11-15 |
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