JP5373056B2 - カルコゲナイド薄膜の形成方法 - Google Patents
カルコゲナイド薄膜の形成方法 Download PDFInfo
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- JP5373056B2 JP5373056B2 JP2011504925A JP2011504925A JP5373056B2 JP 5373056 B2 JP5373056 B2 JP 5373056B2 JP 2011504925 A JP2011504925 A JP 2011504925A JP 2011504925 A JP2011504925 A JP 2011504925A JP 5373056 B2 JP5373056 B2 JP 5373056B2
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- 239000010409 thin film Substances 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims abstract description 50
- 150000004770 chalcogenides Chemical class 0.000 title claims abstract description 42
- 239000007789 gas Substances 0.000 claims abstract description 267
- 238000010926 purge Methods 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 230000008021 deposition Effects 0.000 claims abstract description 51
- 239000012495 reaction gas Substances 0.000 claims abstract description 32
- 150000001875 compounds Chemical class 0.000 claims description 75
- 239000000126 substance Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910000763 AgInSbTe Inorganic materials 0.000 claims description 3
- 229910005542 GaSb Inorganic materials 0.000 claims description 3
- 229910005537 GaSeTe Inorganic materials 0.000 claims description 3
- 229910005900 GeTe Inorganic materials 0.000 claims description 3
- 229910006913 SnSb Inorganic materials 0.000 claims description 3
- 229910004284 Te81Ge15Sb2S2 Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 2
- 239000011669 selenium Substances 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 239000011593 sulfur Substances 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 47
- 230000008569 process Effects 0.000 description 14
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000000427 thin-film deposition Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 150000002902 organometallic compounds Chemical class 0.000 description 5
- 238000004381 surface treatment Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910005872 GeSb Inorganic materials 0.000 description 2
- 229910018321 SbTe Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910005898 GeSn Inorganic materials 0.000 description 1
- 229910005936 Ge—Sb Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- -1 chalcogenide compound Chemical class 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
Description
以上、本発明の望ましい実施形態について図示して説明したが、本発明は、前述した特定の望ましい実施形態に限定されず、特許請求の範囲で請求する本発明の趣旨を逸脱せずに当業者ならば多様な変形実施が可能であるということはいうまでもなく、それらの変更は特許請求の範囲内でのみ可能である。
Claims (13)
- (a)反応器の内部に縦横比を有するパターンが形成されている基板をローディングする段階と、
(b)ソースガスを前記基板上に供給する段階と、
(c)前記基板上に供給されたソースガスをパージするために、前記基板上に第1パージガスを供給する段階と、
(d)前記基板上に前記ソースガスを還元させるための反応ガスを供給する段階と、
(e)前記基板上に供給された反応ガスをパージするために、前記基板上に第2パージガスを供給する段階と、
(f)前記(b)ないし(e)段階からなるサイクルを1回以上反復する段階と、を含み、
前記ソースガスは、Ge原料ガス、Ga原料ガス、In原料ガス、Se原料ガス、Sb原料ガス、Te原料ガス、Sn原料ガス、Ag原料ガス及びS原料ガスから選択された1種以上からなり、
前記反応器の内部に前記反応ガスを用いたプラズマを発生させ、
前記第1パージガスを供給する段階において前記縦横比を有するパターンの内部の蒸着速度が前記縦横比を有するパターンの上部の蒸着速度より大きくなるように、前記ソースガスのパージのために前記第1パージガスの供給時間変更及び前記反応器の内部の圧力調節のうち少なくとも一つを行うことを特徴とするカルコゲナイド薄膜の形成方法。 - 前記縦横比を有するパターンの内部の蒸着速度が前記サイクル当り0.5Åより大きくなるように、前記第1パージガスの供給時間変更及び前記反応器の内部の圧力調節のうち少なくとも一つを行うことを特徴とする請求項1に記載のカルコゲナイド薄膜の形成方法。
- 前記(d)段階は、
前記反応器及び前記反応器の内部のうち少なくとも一つにバイアスを印加することを特徴とする請求項1に記載のカルコゲナイド薄膜の形成方法。 - 前記第1パージガスの供給時間を0.1ないし5秒範囲に設定するか、前記反応器の内部の圧力を0.5ないし10Torrの範囲に設定することを特徴とする請求項1に記載のカルコゲナイド薄膜の形成方法。
- 前記カルコゲナイド薄膜は、Ge−Sb−Te化合物、GaSb、InSb、InSe、Sb2Te3GeTe、Ge2Sb2Te5、InSbTe、GaSeTe、SnSb2Te4、InSbGe、AgInSbTe、(GeSn)SbTe、GeSb(SeTe)及びTe81Ge15Sb2S2から選択された1種以上からなることを特徴とする請求項1に記載のカルコゲナイド薄膜の形成方法。
- 前記反応ガスは、水素(H)を含む化合物であることを特徴とする請求項1に記載のカルコゲナイド薄膜の形成方法。
- 前記第1パージガス及び前記第2パージガスは、窒素(N2)、アルゴン(Ar)及びヘリウム(He)のうち選択された1種以上であることを特徴とする請求項1に記載のカルコゲナイド薄膜の形成方法。
- 前記(a)段階と前記(b)段階との間に、
前記基板上にフッ素(F)を含むガスを用いたプラズマを発生させて、前記基板を表面処理する段階をさらに含むことを特徴とする請求項1に記載のカルコゲナイド薄膜の形成方法。 - 前記フッ素を含むガスは、NF3であることを特徴とする請求項11に記載のカルコゲナイド薄膜の形成方法。
- 前記(b)ないし(f)段階を行う時の前記基板の温度は、100ないし400℃であることを特徴とする請求項1に記載のカルコゲナイド薄膜の形成方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR20080035885 | 2008-04-18 | ||
KR10-2008-0035885 | 2008-04-18 | ||
PCT/KR2009/001959 WO2009128655A2 (ko) | 2008-04-18 | 2009-04-16 | 칼코제나이드 박막 형성방법 |
Publications (2)
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JP2011521443A JP2011521443A (ja) | 2011-07-21 |
JP5373056B2 true JP5373056B2 (ja) | 2013-12-18 |
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JP2011504925A Expired - Fee Related JP5373056B2 (ja) | 2008-04-18 | 2009-04-16 | カルコゲナイド薄膜の形成方法 |
Country Status (6)
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US (1) | US8772077B2 (ja) |
JP (1) | JP5373056B2 (ja) |
KR (1) | KR101515544B1 (ja) |
CN (1) | CN102007574B (ja) |
TW (1) | TWI426151B (ja) |
WO (1) | WO2009128655A2 (ja) |
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KR101464173B1 (ko) * | 2013-07-23 | 2014-11-21 | 영남대학교 산학협력단 | 전이금속 칼코겐화합물 박막 형성 방법 |
KR102144999B1 (ko) * | 2013-11-05 | 2020-08-14 | 삼성전자주식회사 | 이차원 물질과 그 형성방법 및 이차원 물질을 포함하는 소자 |
JP6306386B2 (ja) * | 2014-03-20 | 2018-04-04 | 株式会社日立国際電気 | 基板処理方法、基板処理装置およびプログラム |
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KR100717286B1 (ko) * | 2006-04-21 | 2007-05-15 | 삼성전자주식회사 | 상변화 물질층의 형성 방법과, 그 방법을 이용한 상변화기억 소자의 형성 방법 및 상변화 기억 소자 |
SG171683A1 (en) * | 2006-05-12 | 2011-06-29 | Advanced Tech Materials | Low temperature deposition of phase change memory materials |
KR20060076262A (ko) | 2006-06-14 | 2006-07-04 | 삼성전자주식회사 | 상변화 메모리 제조 장치 및 이를 이용한 상변화 메모리장치 제조 방법 |
KR100807223B1 (ko) * | 2006-07-12 | 2008-02-28 | 삼성전자주식회사 | 상변화 물질층, 상변화 물질층 형성 방법 및 이를 이용한상변화 메모리 장치의 제조 방법 |
KR100773753B1 (ko) | 2006-07-25 | 2007-11-09 | 주식회사 아이피에스 | 상변화 메모리용 칼코제나이드막 증착 방법 |
KR100791477B1 (ko) * | 2006-08-08 | 2008-01-03 | 삼성전자주식회사 | 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법 |
KR101169395B1 (ko) * | 2006-10-13 | 2012-07-30 | 삼성전자주식회사 | 상변화층의 표면처리공정을 포함하는 상변화 메모리 소자의제조방법 |
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2009
- 2009-04-15 KR KR1020090032730A patent/KR101515544B1/ko not_active IP Right Cessation
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- 2009-04-16 TW TW098112672A patent/TWI426151B/zh not_active IP Right Cessation
- 2009-04-16 US US12/936,563 patent/US8772077B2/en not_active Expired - Fee Related
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JP2011521443A (ja) | 2011-07-21 |
US20110027976A1 (en) | 2011-02-03 |
WO2009128655A2 (ko) | 2009-10-22 |
TWI426151B (zh) | 2014-02-11 |
CN102007574B (zh) | 2012-09-19 |
TW201000666A (en) | 2010-01-01 |
US8772077B2 (en) | 2014-07-08 |
KR20090110788A (ko) | 2009-10-22 |
KR101515544B1 (ko) | 2015-04-30 |
CN102007574A (zh) | 2011-04-06 |
WO2009128655A3 (ko) | 2010-01-21 |
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