JP6751631B2 - 基板の凹部をタングステンで充填する方法 - Google Patents
基板の凹部をタングステンで充填する方法 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/14—Deposition of only one other metal element
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H01L2924/01074—Tungsten [W]
Description
・工程S11における前駆体ガスの流量:10sccm〜120sccm
・工程S12におけるパージガスの流量:1000sccm〜10000sccm
・工程S13における水素含有ガスの流量:3000sccm〜10000sccm
・工程S14におけるパージガスの流量:1000sccm〜10000sccm
・第1サイクルCY1におけるキャリアガスの流量:100sccm〜2000sccm
・第1サイクルCY1におけるチャンバ12cの圧力:2000Pa〜5000Pa
・第1サイクルCY1におけるステージ24と壁面16fとの間のギャップ長:8mm〜15mm
・第1サイクルCY1における基板SBの温度(ステージ24の温度):500℃〜600℃
・工程S21における前駆体ガスの流量:10sccm〜120sccm
・工程S22におけるパージガスの流量:7000sccm〜16000sccm
・工程S23における水素含有ガスの流量:3000sccm〜10000sccm
・工程S24におけるパージガスの流量:7000sccm〜16000sccm
・第2サイクルCY2におけるキャリアガスの流量:1000sccm〜3000sccm
・第2サイクルCY2におけるチャンバ12cの圧力:100Pa〜3500Pa
・第2サイクルCY2におけるステージ24と壁面16fとの間のギャップ長:3mm〜10mm
・第2サイクルCY2における基板SBの温度(ステージ24の温度):450℃〜550℃
・工程S31における前駆体ガスの流量:10sccm〜120sccm
・工程S32におけるパージガスの流量:1000sccm〜10000sccm
・工程S33における水素含有ガスの流量:3000sccm〜10000sccm
・工程S34におけるパージガスの流量:1000sccm〜10000sccm
・第3サイクルCY3におけるキャリアガスの流量:100sccm〜2000sccm
・第3サイクルCY3におけるチャンバ12cの圧力:2000Pa〜5000Pa
・第3サイクルCY3におけるステージ24と壁面16fとの間のギャップ長:8mm〜15mm
・第3サイクルCY3における基板SBの温度(ステージ24の温度):500℃〜600℃
Claims (11)
- 基板の凹部をタングステンで充填する方法であって、
前記基板を成膜装置のチャンバ内に準備する工程と、
タングステンを含有する前駆体ガスを前記チャンバに導入すること、前記チャンバをパージすること、水素含有ガスを前記チャンバに導入すること、及び、前記チャンバをパージすることを含む第1サイクルを1回以上実行する工程と、
第1サイクルを1回以上実行する前記工程の後に、タングステンを含有する前駆体ガスを前記チャンバに導入すること、前記チャンバをパージすること、水素含有ガスを前記チャンバに導入すること、及び、前記チャンバをパージすることを含む第2サイクルを1回以上実行する工程と、
第2サイクルを1回以上実行する前記工程の後に、タングステンを含有する前駆体ガスを前記チャンバに導入すること、前記チャンバをパージすること、水素含有ガスを前記チャンバに導入すること、及び、前記チャンバをパージすることを含む第3サイクルを1回以上実行する工程と、
を含み、
前記第2サイクルが実行されているときの前記チャンバの圧力が、前記第1サイクルが実行されているときの前記チャンバの圧力よりも低い圧力に設定され、
前記第3サイクルが実行されているときの前記チャンバの圧力が、前記第2サイクルが実行されているときの前記チャンバの圧力よりも高い圧力に設定される、
方法。 - 前記成膜装置は、
前記チャンバを提供するチャンバ本体と、
前記チャンバ内に設けられておりその上に前記基板が載置されるステージと、
を備え、
前記チャンバ本体は、前記ステージの上方において延在し、前記ステージの上面に対面する壁面を含み、
前記第2サイクルが実行されているときの前記ステージと前記壁面との間の距離が、前記第1サイクルが実行されているときの前記ステージと前記壁面との間の距離よりも短い距離に設定される、
請求項1に記載の方法。 - 前記第2サイクルが実行されているときの前記基板の温度が、前記第1サイクルが実行されているときの前記基板の温度よりも低い温度に設定される、請求項1又は2に記載の方法。
- 前記第2サイクルが実行されているときに前記チャンバに導入されるキャリアガスの流量が、前記第1サイクルが実行されているときに前記チャンバに導入されるキャリアガスの流量よりも大きい流量に設定される、請求項1〜3の何れか一項に記載の方法。
- 前記第2サイクルにおいて前記チャンバをパージしているときに該チャンバに導入される不活性ガスの流量が、前記第1サイクルにおいて前記チャンバをパージしているときに該チャンバに導入される不活性ガスの流量よりも大きい流量に設定される、請求項1〜4の何れか一項に記載の方法。
- 前記成膜装置は、
前記チャンバを提供するチャンバ本体と、
前記チャンバ内に設けられておりその上に前記基板が載置されるステージと、
を備え、
前記チャンバ本体は、前記ステージの上方において延在し、前記ステージの上面に対面する壁面を含み、
前記第2サイクルが実行されているときの前記ステージと前記壁面との間の距離が、前記第1サイクルが実行されているときの前記ステージと前記壁面との間の距離、及び、前記第3サイクルが実行されているときの前記ステージと前記壁面との間の距離よりも短い距離に設定される、
請求項1に記載の方法。 - 前記第2サイクルが実行されているときの前記基板の温度が、前記第1サイクルが実行されているときの前記基板の温度、及び、前記第3サイクルが実行されているときの前記基板の温度よりも低い温度に設定される、請求項1又は6に記載の方法。
- 前記第2サイクルが実行されているときに前記チャンバに導入されるキャリアガスの流量が、前記第1サイクルが実行されているときに前記チャンバに導入されるキャリアガスの流量、及び、前記第3サイクルが実行されているときに前記チャンバに導入されるキャリアガスの流量よりも大きい流量に設定される、請求項1、6、及び7の何れか一項に記載の方法。
- 前記第2サイクルにおいて前記チャンバをパージしているときに該チャンバに導入される不活性ガスの流量が、前記第1サイクルにおいて前記チャンバをパージしているときに該チャンバに導入される不活性ガスの流量、及び、前記第3サイクルにおいて前記チャンバをパージしているときに該チャンバに導入される不活性ガスの流量よりも大きい流量に設定される、請求項1及び6〜8の何れか一項に記載の方法。
- 前記前駆体ガスは、ハロゲン化タングステンを含有するガスである、請求項1及び6〜9の何れか一項に記載の方法。
- 前記ハロゲン化タングステンは、WCl6、WCl5、又は、WF6である、請求項10に記載の方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2016178638A JP6751631B2 (ja) | 2016-09-13 | 2016-09-13 | 基板の凹部をタングステンで充填する方法 |
KR1020170113065A KR101913044B1 (ko) | 2016-09-13 | 2017-09-05 | 기판의 오목부를 텅스텐으로 충전하는 방법 |
US15/697,751 US10316410B2 (en) | 2016-09-13 | 2017-09-07 | Method of filling recesses in substrate with tungsten |
CN201710816549.1A CN107818944B (zh) | 2016-09-13 | 2017-09-12 | 使用钨填充衬底的凹部的方法 |
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JP2020200496A (ja) * | 2019-06-07 | 2020-12-17 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
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US7964505B2 (en) * | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
WO2006098565A1 (en) * | 2005-03-16 | 2006-09-21 | Ips Ltd. | Method of depositing thin film using ald process |
KR101515544B1 (ko) * | 2008-04-18 | 2015-04-30 | 주식회사 원익아이피에스 | 칼코제나이드 박막 형성방법 |
US8071478B2 (en) * | 2008-12-31 | 2011-12-06 | Applied Materials, Inc. | Method of depositing tungsten film with reduced resistivity and improved surface morphology |
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JP6416679B2 (ja) | 2015-03-27 | 2018-10-31 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
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