JP5366517B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5366517B2
JP5366517B2 JP2008303618A JP2008303618A JP5366517B2 JP 5366517 B2 JP5366517 B2 JP 5366517B2 JP 2008303618 A JP2008303618 A JP 2008303618A JP 2008303618 A JP2008303618 A JP 2008303618A JP 5366517 B2 JP5366517 B2 JP 5366517B2
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layer
single crystal
substrate
inorganic insulating
insulating film
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JP2008303618A
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Japanese (ja)
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JP2009158939A (ja
JP2009158939A5 (enExample
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薫 土屋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008303618A priority Critical patent/JP5366517B2/ja
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Publication of JP2009158939A5 publication Critical patent/JP2009158939A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2008303618A 2007-12-03 2008-11-28 半導体装置の作製方法 Expired - Fee Related JP5366517B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008303618A JP5366517B2 (ja) 2007-12-03 2008-11-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007311910 2007-12-03
JP2007311910 2007-12-03
JP2008303618A JP5366517B2 (ja) 2007-12-03 2008-11-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009158939A JP2009158939A (ja) 2009-07-16
JP2009158939A5 JP2009158939A5 (enExample) 2011-10-27
JP5366517B2 true JP5366517B2 (ja) 2013-12-11

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US (1) US7696063B2 (enExample)
JP (1) JP5366517B2 (enExample)

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KR20200047898A (ko) * 2018-10-26 2020-05-08 삼성디스플레이 주식회사 스캔 구동부 및 이를 포함하는 표시 장치
US11257886B2 (en) 2018-10-05 2022-02-22 Samsung Display Co., Ltd. Organic light emitting diode display

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JP5240651B2 (ja) * 2008-04-30 2013-07-17 信越半導体株式会社 多層シリコン半導体ウェーハ及びその作製方法
JP5358324B2 (ja) 2008-07-10 2013-12-04 株式会社半導体エネルギー研究所 電子ペーパー
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KR102062077B1 (ko) * 2009-10-30 2020-01-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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CN110718557B (zh) 2010-03-08 2023-12-26 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
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US11257886B2 (en) 2018-10-05 2022-02-22 Samsung Display Co., Ltd. Organic light emitting diode display
US11856818B2 (en) 2018-10-05 2023-12-26 Samsung Display Co., Ltd. Organic light emitting diode display
US12641879B2 (en) 2018-10-05 2026-05-26 Samsung Display Co., Ltd. Organic light emitting diode display
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US20090142888A1 (en) 2009-06-04
US7696063B2 (en) 2010-04-13

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