JP5360595B2 - Cu系配線膜 - Google Patents
Cu系配線膜 Download PDFInfo
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- JP5360595B2 JP5360595B2 JP2009525427A JP2009525427A JP5360595B2 JP 5360595 B2 JP5360595 B2 JP 5360595B2 JP 2009525427 A JP2009525427 A JP 2009525427A JP 2009525427 A JP2009525427 A JP 2009525427A JP 5360595 B2 JP5360595 B2 JP 5360595B2
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- 239000000758 substrate Substances 0.000 claims description 22
- 238000002441 X-ray diffraction Methods 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 description 83
- 238000004544 sputter deposition Methods 0.000 description 18
- 238000005546 reactive sputtering Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- -1 Mo and Mo Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
本発明の目的は、上記の課題に鑑み、基板との密着性を向上することが可能な新規なCu系配線膜を提供することである。
すなわち、本発明は、ガラス基板上に形成されるCu酸化物を有するCu系配線膜であって、Cuの主結晶面(111)面のX線回折ピーク強度をCu(111)、Cu2Oの主結晶面(111)面のX線回折のピーク強度をCu2O(111)とした場合に、その強度比Cu(111)/Cu2O(111)の値が0.8〜2.5の範囲にあるCu系配線膜である。
また、好ましくは、膜厚が200〜500nmである前記Cu系配線膜である。
また、好ましくは、比抵抗が15μΩcm以下の前記Cu系配線膜である。
また、前記Cu系配線膜上にCu膜が積層される構成も望ましい。
Cu系配線膜中のCu2O量に関しては、同定が困難であるため、X線回折強度測定において、Cuの主結晶面(111)面のピーク強度とCu2Oの主結晶面(111)面のピーク強度の比で特定している。ピーク強度比Cu(111)/Cu2O(111)は0.8〜2.5の範囲とすることで、密着性の向上の効果が十分現れる。好ましくは、ピーク強度比Cu(111)/Cu2O(111)が1.0〜2.0の範囲である。
なお、本発明のCu系配線膜においては、成膜時に比抵抗が高いものに関しても、成膜後に真空雰囲気中で加熱処理を行うことで、比抵抗を15μΩcm以下へ低減することが可能である。
また、試料1、5および6のX回折強度測定をした際のX線回折パターンをそれぞれ図1〜3に示す。
また、各試料を100Pa以下に減圧した真空雰囲気で温度250℃、1時間の加熱処理を行った後に、比抵抗を測定した。その結果も表1に示す。
また、試料4および5は、真空雰囲気中で加熱処理を行うことで、比抵抗を15μΩcm以下へ低減することが可能であることも分かる。
各試料は、比抵抗を測定するとともに、実施例1と同様に、X線回折強度測定を行いCuとCu2Oのピーク強度比を評価した。また、ガラス基板側からコニカミノルタ製のCM2002分光測色計でSi膜の反射率を測定した。
その後、各試料を100Pa以下に減圧した真空雰囲気で温度250℃、1時間の加熱処理を行った。加熱処理後の試料に関しても上記と同様に比抵抗、X線回折強度、反射率を測定した。以上の結果を表2に示す。
上記で作製した積層のCu系配線膜に関して、比抵抗を測定するとともに、密着性試験として積層のCu系配線膜に2mm間隔で碁盤の目状に切れ目を入れた後、膜表面にテープを貼り、引き剥がした時に基板上に残った桝目を面積率で評価する試験を行った。その結果、比抵抗は2.3μΩcm、密着性は100%であった。
以上から、積層のCu系配線膜とすることで、密着性と低抵抗特性を両立した配線膜が得られることが分かる。
Claims (4)
- ガラス基板直上に形成される、Cu酸化物を含有する平面表示装置用Cu系配線膜であって、
Cuの主結晶面(111)面のX線回折ピーク強度をCu(111)、Cu2Oの主結晶面(111)面のX線回折のピーク強度をCu2O(111)とした時に、ピーク強度比Cu(111)/Cu2O(111)の値が0.8〜2.5の範囲にあることを特徴とする平面表示装置用Cu系配線膜。 - 膜厚が200〜500nmであることを特徴とする請求項1に記載の平面表示装置用Cu系配線膜。
- 比抵抗が15μΩcm以下であることを特徴とする請求項1または2に記載の平面表示装置用Cu系配線膜。
- 請求項1に記載の平面表示装置用Cu系配線膜上にCu膜が積層されることを特徴とする平面表示装置用Cu系配線膜。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2009525427A JP5360595B2 (ja) | 2007-07-31 | 2008-07-30 | Cu系配線膜 |
Applications Claiming Priority (6)
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JP2007198939 | 2007-07-31 | ||
JP2007198939 | 2007-07-31 | ||
JP2008001374 | 2008-01-08 | ||
JP2008001374 | 2008-01-08 | ||
JP2009525427A JP5360595B2 (ja) | 2007-07-31 | 2008-07-30 | Cu系配線膜 |
PCT/JP2008/063642 WO2009017146A1 (ja) | 2007-07-31 | 2008-07-30 | Cu系配線膜 |
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JP2013185185A Division JP5656135B2 (ja) | 2007-07-31 | 2013-09-06 | Cu系配線膜 |
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JPWO2009017146A1 JPWO2009017146A1 (ja) | 2010-10-21 |
JP5360595B2 true JP5360595B2 (ja) | 2013-12-04 |
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JP2013185185A Active JP5656135B2 (ja) | 2007-07-31 | 2013-09-06 | Cu系配線膜 |
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JP (2) | JP5360595B2 (ja) |
KR (1) | KR101088744B1 (ja) |
CN (1) | CN101689502B (ja) |
WO (1) | WO2009017146A1 (ja) |
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EP2312633A1 (en) * | 2009-10-15 | 2011-04-20 | Applied Materials, Inc. | Method and installation for producing a semiconductor device, and semiconductor device |
CN102870072B (zh) * | 2010-07-14 | 2015-03-25 | 阿尔卑斯电气株式会社 | 输入装置及其制造方法 |
KR101795480B1 (ko) * | 2015-04-06 | 2017-11-10 | 코닝정밀소재 주식회사 | 집적회로 패키지용 기판 |
Citations (5)
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KR20020017435A (ko) * | 2000-08-30 | 2002-03-07 | 구본준, 론 위라하디락사 | 액정표시장치 제조방법 |
JP2002305198A (ja) * | 2001-04-06 | 2002-10-18 | Toshiba Corp | 電子デバイスの製造方法 |
JP2007005628A (ja) * | 2005-06-24 | 2007-01-11 | Sharp Corp | 配線構造およびその製造方法 |
WO2008114866A1 (ja) * | 2007-03-22 | 2008-09-25 | Hitachi Chemical Co., Ltd. | 金属微粒子及びその製造方法、並びに金属微粒子分散液及びその製造方法 |
JP2010528428A (ja) * | 2007-05-18 | 2010-08-19 | アプライド・ナノテック・ホールディングス・インコーポレーテッド | 金属インク |
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JPH034214A (ja) * | 1989-05-31 | 1991-01-10 | Sharp Corp | 液晶表示装置 |
US5834374A (en) * | 1994-09-30 | 1998-11-10 | International Business Machines Corporation | Method for controlling tensile and compressive stresses and mechanical problems in thin films on substrates |
JPH11204521A (ja) * | 1998-01-09 | 1999-07-30 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2001144092A (ja) * | 1999-11-15 | 2001-05-25 | Toshiba Corp | 半導体装置の製造方法 |
JP2007072428A (ja) * | 2005-08-09 | 2007-03-22 | Tohoku Univ | 平面電子表示装置及びその製造方法 |
JPWO2007060984A1 (ja) * | 2005-11-28 | 2009-05-07 | 株式会社アライドマテリアル | レジンボンド超砥粒ホイールおよびその製造方法 |
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- 2008-07-30 CN CN2008800226157A patent/CN101689502B/zh active Active
- 2008-07-30 JP JP2009525427A patent/JP5360595B2/ja active Active
- 2008-07-30 KR KR1020097026478A patent/KR101088744B1/ko active IP Right Grant
- 2008-07-30 WO PCT/JP2008/063642 patent/WO2009017146A1/ja active Application Filing
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20020017435A (ko) * | 2000-08-30 | 2002-03-07 | 구본준, 론 위라하디락사 | 액정표시장치 제조방법 |
JP2002305198A (ja) * | 2001-04-06 | 2002-10-18 | Toshiba Corp | 電子デバイスの製造方法 |
JP2007005628A (ja) * | 2005-06-24 | 2007-01-11 | Sharp Corp | 配線構造およびその製造方法 |
WO2008114866A1 (ja) * | 2007-03-22 | 2008-09-25 | Hitachi Chemical Co., Ltd. | 金属微粒子及びその製造方法、並びに金属微粒子分散液及びその製造方法 |
JP2010528428A (ja) * | 2007-05-18 | 2010-08-19 | アプライド・ナノテック・ホールディングス・インコーポレーテッド | 金属インク |
Non-Patent Citations (2)
Title |
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JPN6013023279; J.J.KIM et al.: 'Seedless Fill-Up of the Damascene Structure Only by Coppler Electroless Plating' Jpn.J.Appl.Phys. Vol.42,Part 2,No.8A, 20030801, pp.L953-L955, The Japan Society of Applied Physics * |
Also Published As
Publication number | Publication date |
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CN101689502B (zh) | 2011-09-28 |
WO2009017146A1 (ja) | 2009-02-05 |
CN101689502A (zh) | 2010-03-31 |
JP2014059559A (ja) | 2014-04-03 |
JP5656135B2 (ja) | 2015-01-21 |
KR20100009640A (ko) | 2010-01-28 |
KR101088744B1 (ko) | 2011-12-01 |
JPWO2009017146A1 (ja) | 2010-10-21 |
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