JP5359286B2 - 超臨界処理装置、基板処理システム及び超臨界処理方法 - Google Patents

超臨界処理装置、基板処理システム及び超臨界処理方法 Download PDF

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JP5359286B2
JP5359286B2 JP2009001786A JP2009001786A JP5359286B2 JP 5359286 B2 JP5359286 B2 JP 5359286B2 JP 2009001786 A JP2009001786 A JP 2009001786A JP 2009001786 A JP2009001786 A JP 2009001786A JP 5359286 B2 JP5359286 B2 JP 5359286B2
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processing
state
liquid
substrate
fluid
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JP2010161165A5 (enExample
JP2010161165A (ja
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孝之 戸島
和雄 寺田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2009001786A priority Critical patent/JP5359286B2/ja
Priority to KR1020090130685A priority patent/KR101384320B1/ko
Priority to US12/652,794 priority patent/US9076643B2/en
Publication of JP2010161165A publication Critical patent/JP2010161165A/ja
Publication of JP2010161165A5 publication Critical patent/JP2010161165A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02101—Cleaning only involving supercritical fluids

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009001786A 2009-01-07 2009-01-07 超臨界処理装置、基板処理システム及び超臨界処理方法 Active JP5359286B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009001786A JP5359286B2 (ja) 2009-01-07 2009-01-07 超臨界処理装置、基板処理システム及び超臨界処理方法
KR1020090130685A KR101384320B1 (ko) 2009-01-07 2009-12-24 초임계 처리 장치, 기판 처리 시스템 및 초임계 처리 방법
US12/652,794 US9076643B2 (en) 2009-01-07 2010-01-06 Supercritical processing apparatus, substrate processing system and supercritical processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009001786A JP5359286B2 (ja) 2009-01-07 2009-01-07 超臨界処理装置、基板処理システム及び超臨界処理方法

Publications (3)

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JP2010161165A JP2010161165A (ja) 2010-07-22
JP2010161165A5 JP2010161165A5 (enExample) 2011-04-21
JP5359286B2 true JP5359286B2 (ja) 2013-12-04

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US (1) US9076643B2 (enExample)
JP (1) JP5359286B2 (enExample)
KR (1) KR101384320B1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5506461B2 (ja) * 2010-03-05 2014-05-28 東京エレクトロン株式会社 超臨界処理装置及び超臨界処理方法
KR20120028672A (ko) * 2010-09-15 2012-03-23 삼성전자주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법
JP5620234B2 (ja) 2010-11-15 2014-11-05 株式会社東芝 半導体基板の超臨界乾燥方法および基板処理装置
JP5450494B2 (ja) 2011-03-25 2014-03-26 株式会社東芝 半導体基板の超臨界乾燥方法
JP5985156B2 (ja) * 2011-04-04 2016-09-06 東京エレクトロン株式会社 半導体基板の超臨界乾燥方法及び装置
WO2012165377A1 (ja) * 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP6085423B2 (ja) * 2011-05-30 2017-02-22 株式会社東芝 基板処理方法、基板処理装置および記憶媒体
KR101572746B1 (ko) 2011-05-30 2015-11-27 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 기판 처리 장치 및 기억 매체
JP6085424B2 (ja) * 2011-05-30 2017-02-22 株式会社東芝 基板処理方法、基板処理装置および記憶媒体
JP5843277B2 (ja) 2011-07-19 2016-01-13 株式会社東芝 半導体基板の超臨界乾燥方法及び装置
KR101874901B1 (ko) 2011-12-07 2018-07-06 삼성전자주식회사 기판 건조 장치 및 방법
JP6068029B2 (ja) * 2012-07-18 2017-01-25 株式会社東芝 基板処理方法、基板処理装置および記憶媒体
JP6400919B2 (ja) 2013-03-07 2018-10-03 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
KR102037844B1 (ko) * 2013-03-12 2019-11-27 삼성전자주식회사 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법
JP6005702B2 (ja) * 2014-09-18 2016-10-12 株式会社東芝 半導体基板の超臨界乾燥方法および基板処理装置
JP5897690B1 (ja) * 2014-11-10 2016-03-30 株式会社オティックス 軸受装置
JP6441176B2 (ja) * 2015-07-10 2018-12-19 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
US10566182B2 (en) 2016-03-02 2020-02-18 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and storage medium
JP6532834B2 (ja) * 2016-03-02 2019-06-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記録媒体
US20180323063A1 (en) * 2017-05-03 2018-11-08 Applied Materials, Inc. Method and apparatus for using supercritical fluids in semiconductor applications
KR102358561B1 (ko) * 2017-06-08 2022-02-04 삼성전자주식회사 기판 처리 장치 및 집적회로 소자 제조 장치
KR102434561B1 (ko) * 2017-06-29 2022-08-23 주식회사 케이씨텍 기판처리장치 및 기판처리방법
JP6925219B2 (ja) * 2017-09-29 2021-08-25 東京エレクトロン株式会社 基板処理装置
TWI831656B (zh) * 2018-01-04 2024-02-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
KR102143139B1 (ko) 2018-04-30 2020-08-12 세메스 주식회사 기판 처리 장치
KR102163293B1 (ko) * 2018-10-10 2020-10-08 (주)엘케이시스템즈 반도체 기판 플럭스 세정 시스템
JP7224246B2 (ja) * 2019-06-28 2023-02-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7493325B2 (ja) * 2019-11-25 2024-05-31 東京エレクトロン株式会社 基板処理装置
JP7517856B2 (ja) 2020-04-02 2024-07-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102622983B1 (ko) 2020-07-10 2024-01-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102603680B1 (ko) * 2020-12-28 2023-11-20 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102609394B1 (ko) * 2021-05-31 2023-12-06 세메스 주식회사 기판 처리 장치
KR20220170405A (ko) 2021-06-22 2022-12-30 삼성전자주식회사 기판 건조 장치, 이를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법
KR102643365B1 (ko) * 2021-09-03 2024-03-07 세메스 주식회사 기판 처리 장치 및 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1939836A (en) * 1930-01-02 1933-12-19 Edward R Tolfree Apparatus for flushing water cooling systems
JPH09232271A (ja) 1996-02-20 1997-09-05 Sharp Corp 半導体ウェハの洗浄装置
JP3979764B2 (ja) 2000-04-28 2007-09-19 大日本スクリーン製造株式会社 基板熱処理装置
JP3553904B2 (ja) * 2001-04-11 2004-08-11 日本電信電話株式会社 超臨界乾燥方法
US6703316B2 (en) * 2001-04-27 2004-03-09 Kabushiki Kaisha Kobe Seiko Sho Method and system for processing substrate
US6878216B2 (en) * 2001-09-03 2005-04-12 Tokyo Electron Limited Substrate processing method and substrate processing system
US6742279B2 (en) * 2002-01-16 2004-06-01 Applied Materials Inc. Apparatus and method for rinsing substrates
JP4230830B2 (ja) 2003-06-13 2009-02-25 日本電信電話株式会社 超臨界処理装置
JP4307973B2 (ja) * 2003-12-11 2009-08-05 株式会社日立ハイテクサイエンスシステムズ 超臨界流体処理装置及びその方法
JP2007049065A (ja) * 2005-08-12 2007-02-22 Ntt Advanced Technology Corp 超臨界処理装置

Also Published As

Publication number Publication date
US9076643B2 (en) 2015-07-07
US20110000507A1 (en) 2011-01-06
KR20100081925A (ko) 2010-07-15
JP2010161165A (ja) 2010-07-22
KR101384320B1 (ko) 2014-04-14

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