JP5357240B2 - ＣＶＤ及びＡＬＤのＳｉＯ２膜のためのアミノビニルシラン - Google Patents

ＣＶＤ及びＡＬＤのＳｉＯ２膜のためのアミノビニルシラン Download PDF

Info

Publication number
JP5357240B2
JP5357240B2 JP2011268617A JP2011268617A JP5357240B2 JP 5357240 B2 JP5357240 B2 JP 5357240B2 JP 2011268617 A JP2011268617 A JP 2011268617A JP 2011268617 A JP2011268617 A JP 2011268617A JP 5357240 B2 JP5357240 B2 JP 5357240B2
Authority
JP
Japan
Prior art keywords
bis
precursor
reactor
vinylsilane
tris
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011268617A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012124492A (ja
JP2012124492A5 (enExample
Inventor
シャオ マンチャオ
ヤン リュ
スコット カットヒル カーク
レジーナ ボーウェン ヘザー
ビン ハン
レオナルド オニール マーク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of JP2012124492A publication Critical patent/JP2012124492A/ja
Publication of JP2012124492A5 publication Critical patent/JP2012124492A5/ja
Application granted granted Critical
Publication of JP5357240B2 publication Critical patent/JP5357240B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H10P14/6334—
    • H10P14/6336—
    • H10P14/6339—
    • H10P14/6689—
    • H10P14/69215—
    • H10P14/6922—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2011268617A 2010-12-09 2011-12-08 ＣＶＤ及びＡＬＤのＳｉＯ２膜のためのアミノビニルシラン Expired - Fee Related JP5357240B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/964,266 US8460753B2 (en) 2010-12-09 2010-12-09 Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes
US12/964,266 2010-12-09

Publications (3)

Publication Number Publication Date
JP2012124492A JP2012124492A (ja) 2012-06-28
JP2012124492A5 JP2012124492A5 (enExample) 2013-05-30
JP5357240B2 true JP5357240B2 (ja) 2013-12-04

Family

ID=45440145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011268617A Expired - Fee Related JP5357240B2 (ja) 2010-12-09 2011-12-08 ＣＶＤ及びＡＬＤのＳｉＯ２膜のためのアミノビニルシラン

Country Status (6)

Country Link
US (1) US8460753B2 (enExample)
EP (1) EP2463404B1 (enExample)
JP (1) JP5357240B2 (enExample)
KR (1) KR101404576B1 (enExample)
CN (2) CN102534548A (enExample)
TW (1) TWI444499B (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9448564B2 (en) 2013-02-15 2016-09-20 Reno Technologies, Inc. Gas delivery system for outputting fast square waves of process gas during semiconductor processing
US9958302B2 (en) 2011-08-20 2018-05-01 Reno Technologies, Inc. Flow control system, method, and apparatus
US9188989B1 (en) 2011-08-20 2015-11-17 Daniel T. Mudd Flow node to deliver process gas using a remote pressure measurement device
DE102012203212B4 (de) * 2012-03-01 2025-02-27 Osram Oled Gmbh Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses
US9460912B2 (en) 2012-04-12 2016-10-04 Air Products And Chemicals, Inc. High temperature atomic layer deposition of silicon oxide thin films
WO2014040002A2 (en) 2012-09-10 2014-03-13 Mudd Daniel T Pressure based mass flow controller
KR101993355B1 (ko) 2013-03-13 2019-09-30 삼성전자주식회사 반도체 장치의 제조 방법
KR102195139B1 (ko) * 2014-02-20 2020-12-24 삼성전자주식회사 반도체 장치의 제조 방법
US9875888B2 (en) 2014-10-03 2018-01-23 Applied Materials, Inc. High temperature silicon oxide atomic layer deposition technology
WO2016065219A1 (en) * 2014-10-24 2016-04-28 Air Products And Chemicals, Inc. Compositions and methods using same for deposition of silicon-containing film
US10421766B2 (en) * 2015-02-13 2019-09-24 Versum Materials Us, Llc Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films
IL260069B2 (en) * 2015-12-21 2024-02-01 Versum Mat Us Llc Preparations and methods using them for depositing a silicon-containing layer
EP3420117B1 (en) * 2016-02-26 2024-04-24 Versum Materials US, LLC Compositions and methods using same for deposition of silicon-containing film
US10679880B2 (en) 2016-09-27 2020-06-09 Ichor Systems, Inc. Method of achieving improved transient response in apparatus for controlling flow and system for accomplishing same
US11144075B2 (en) 2016-06-30 2021-10-12 Ichor Systems, Inc. Flow control system, method, and apparatus
US10838437B2 (en) 2018-02-22 2020-11-17 Ichor Systems, Inc. Apparatus for splitting flow of process gas and method of operating same
US10303189B2 (en) 2016-06-30 2019-05-28 Reno Technologies, Inc. Flow control system, method, and apparatus
US10663337B2 (en) 2016-12-30 2020-05-26 Ichor Systems, Inc. Apparatus for controlling flow and method of calibrating same
US11177127B2 (en) * 2017-05-24 2021-11-16 Versum Materials Us, Llc Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
US12057310B2 (en) 2018-05-22 2024-08-06 Versum Materials Us, Llc Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
CN112969816A (zh) * 2018-10-04 2021-06-15 弗萨姆材料美国有限责任公司 用于高质量氧化硅薄膜的高温原子层沉积的组合物
JP7164789B2 (ja) 2018-12-21 2022-11-02 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ５５０℃以上の温度でＡＬＤを使用してＳｉ含有膜を堆積させるための前駆体及びプロセス
CN112777565B (zh) * 2019-11-05 2022-11-22 中国科学院大连化学物理研究所 一种可抑制逆反应的半导体光催化分解水的方法
TWI797640B (zh) 2020-06-18 2023-04-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 基於矽之自組裝單層組成物及使用該組成物之表面製備
EP4176100A4 (en) * 2020-07-24 2024-08-14 Versum Materials US, LLC COMPOSITIONS AND METHODS OF USE THEREOF FOR GERMANIUM SEED LAYER
WO2022186971A1 (en) 2021-03-03 2022-09-09 Ichor Systems, Inc. Fluid flow control system comprising a manifold assembly

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1352951A (en) * 1971-12-08 1974-05-15 Shell Int Research Electrostatic coating of glass-fibre material
US4863755A (en) * 1987-10-16 1989-09-05 The Regents Of The University Of California Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors
JP3093070B2 (ja) * 1993-01-26 2000-10-03 大阪瓦斯株式会社 Ｃｖｄ薄膜形成装置
US5976991A (en) * 1998-06-11 1999-11-02 Air Products And Chemicals, Inc. Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane
JP4722269B2 (ja) * 2000-08-29 2011-07-13 Ａｚエレクトロニックマテリアルズ株式会社 低誘電率多孔質シリカ質膜、半導体装置およびコーティング組成物、ならびに低誘電率多孔質シリカ質膜の製造方法
US6391803B1 (en) * 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US20080268177A1 (en) 2002-05-17 2008-10-30 Air Products And Chemicals, Inc. Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants
KR100505668B1 (ko) * 2002-07-08 2005-08-03 삼성전자주식회사 원자층 증착 방법에 의한 실리콘 산화막 형성 방법
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US20040197474A1 (en) 2003-04-01 2004-10-07 Vrtis Raymond Nicholas Method for enhancing deposition rate of chemical vapor deposition films
JP3666751B2 (ja) 2003-11-28 2005-06-29 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜形成システム
JP2006261434A (ja) 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
US7312129B2 (en) * 2006-01-25 2007-12-25 Freescale Semiconductor, Inc. Method for producing two gates controlling the same channel
JP5177617B2 (ja) * 2006-12-25 2013-04-03 独立行政法人産業技術総合研究所 酸化シリコン薄膜形成装置
US7500397B2 (en) * 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
KR20100038211A (ko) 2007-06-28 2010-04-13 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 이산화규소 간극 충전용 전구체
US8580993B2 (en) * 2008-11-12 2013-11-12 Air Products And Chemicals, Inc. Amino vinylsilane precursors for stressed SiN films
US8703624B2 (en) 2009-03-13 2014-04-22 Air Products And Chemicals, Inc. Dielectric films comprising silicon and methods for making same
US8889235B2 (en) * 2009-05-13 2014-11-18 Air Products And Chemicals, Inc. Dielectric barrier deposition using nitrogen containing precursor
US8242029B2 (en) * 2009-11-23 2012-08-14 Asm International N.V. Method for forming a silicon dioxide/metal oxide-nanolaminate with a desired wet etch rate

Also Published As

Publication number Publication date
EP2463404B1 (en) 2019-10-23
CN105239055A (zh) 2016-01-13
KR20120064635A (ko) 2012-06-19
US20120148745A1 (en) 2012-06-14
KR101404576B1 (ko) 2014-06-09
CN102534548A (zh) 2012-07-04
US8460753B2 (en) 2013-06-11
TWI444499B (zh) 2014-07-11
EP2463404A1 (en) 2012-06-13
JP2012124492A (ja) 2012-06-28
TW201224193A (en) 2012-06-16

Similar Documents

Publication Publication Date Title
JP5357240B2 (ja) ＣＶＤ及びＡＬＤのＳｉＯ２膜のためのアミノビニルシラン
US6217658B1 (en) Sequencing of the recipe steps for the optimal low-dielectric constant HDP-CVD Processing
TWI512136B (zh) 伴隨持續的電漿之ｐｅｃｖｄ多重步驟處理方法
KR960011015B1 (ko) 유기디실란 소오스를 사용하여 저압 화학적 증착에 의해 100°c 정도의 저온에서 이산화규소막을 증착하는 방법
US6395092B1 (en) Apparatus for depositing high deposition rate halogen-doped silicon oxide layer
KR101913443B1 (ko) 컨포멀 막들의 플라즈마 활성화된 성막
KR100300177B1 (ko) 할로겐도핑된산화실리콘막의막안정성개선을위한방법및그장치
JP2004533722A (ja) 抵抗加熱された単一ウエハチャンバ内のドープ処理済みシリコン堆積処理
CN106463362A (zh) 具有气体分布及单独泵送的批量固化腔室
KR101423019B1 (ko) 미세 패턴의 형성 방법
KR20200024360A (ko) 저-k 막들의 증착을 위한 방법들 및 장치
JP2018512727A (ja) 高品質薄膜を形成するための周期的連続処理
US10676823B2 (en) Processing method and processing apparatus
CN113243039A (zh) 生长掺杂iv族材料的方法
WO2010038885A1 (ja) 窒化珪素膜およびその形成方法、コンピュータ読み取り可能な記憶媒体並びにプラズマｃｖｄ装置
CN113166937A (zh) 1-甲基-1-异丙氧基-硅杂环烷烃和由其制备的致密有机硅膜
Boogaard et al. Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD
Hernandez et al. Silicon dioxide deposition by electron cyclotron resonance plasma: kinetic and ellipsometric studies
Hinz et al. Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
Hernández et al. Kinetics and Compositional Dependence on the Microwave Power and SiH4/N 2 Flow Ratio of Silicon Nitride Deposited by Electron Cyclotron Resonance Plasmas
Katz et al. Fast thermal kinetic growth of silicon dioxide films on InP by rapid thermal low-pressure chemical vapour deposition
JP2023131969A (ja) エッチング方法、および、エッチング装置
TWI813375B (zh) 具有氣體分佈及個別泵送的批次固化腔室
Fan Low pressure chemical vapor deposition of silicon nitride films from ditertiarybutylsilane
JP2004186210A (ja) 窒素含有ケイ素化合物膜の形成方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121025

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121030

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130129

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130201

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20130410

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130730

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130829

R150 Certificate of patent or registration of utility model

Ref document number: 5357240

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees