JP5356872B2 - 個体撮像装置の製造方法 - Google Patents

個体撮像装置の製造方法 Download PDF

Info

Publication number
JP5356872B2
JP5356872B2 JP2009066877A JP2009066877A JP5356872B2 JP 5356872 B2 JP5356872 B2 JP 5356872B2 JP 2009066877 A JP2009066877 A JP 2009066877A JP 2009066877 A JP2009066877 A JP 2009066877A JP 5356872 B2 JP5356872 B2 JP 5356872B2
Authority
JP
Japan
Prior art keywords
single crystal
silicon single
crystal layer
wafer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009066877A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010219439A (ja
JP2010219439A5 (enExample
Inventor
朗 塚本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2009066877A priority Critical patent/JP5356872B2/ja
Priority to PCT/JP2009/005509 priority patent/WO2010106591A1/ja
Publication of JP2010219439A publication Critical patent/JP2010219439A/ja
Priority to US13/220,079 priority patent/US20110316107A1/en
Publication of JP2010219439A5 publication Critical patent/JP2010219439A5/ja
Priority to US14/061,750 priority patent/US9018031B2/en
Application granted granted Critical
Publication of JP5356872B2 publication Critical patent/JP5356872B2/ja
Priority to US15/582,014 priority patent/USRE47208E1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009066877A 2009-03-18 2009-03-18 個体撮像装置の製造方法 Active JP5356872B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009066877A JP5356872B2 (ja) 2009-03-18 2009-03-18 個体撮像装置の製造方法
PCT/JP2009/005509 WO2010106591A1 (ja) 2009-03-18 2009-10-21 固体撮像装置及びその製造方法
US13/220,079 US20110316107A1 (en) 2009-03-18 2011-08-29 Solid-state image sensor and manufacturing method of the sensor
US14/061,750 US9018031B2 (en) 2009-03-18 2013-10-23 Manufacturing method of solid-state image sensor
US15/582,014 USRE47208E1 (en) 2009-03-18 2017-04-28 Manufacturing method of solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009066877A JP5356872B2 (ja) 2009-03-18 2009-03-18 個体撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010219439A JP2010219439A (ja) 2010-09-30
JP2010219439A5 JP2010219439A5 (enExample) 2012-04-26
JP5356872B2 true JP5356872B2 (ja) 2013-12-04

Family

ID=42739265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009066877A Active JP5356872B2 (ja) 2009-03-18 2009-03-18 個体撮像装置の製造方法

Country Status (3)

Country Link
US (3) US20110316107A1 (enExample)
JP (1) JP5356872B2 (enExample)
WO (1) WO2010106591A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013149712A (ja) 2012-01-18 2013-08-01 Toshiba Corp 半導体装置の製造方法
US8871608B2 (en) * 2012-02-08 2014-10-28 Gtat Corporation Method for fabricating backside-illuminated sensors
JP6032963B2 (ja) * 2012-06-20 2016-11-30 キヤノン株式会社 Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法
JP2014027123A (ja) * 2012-07-27 2014-02-06 Renesas Electronics Corp 半導体装置およびその製造方法
US9490128B2 (en) * 2012-08-27 2016-11-08 Ultratech, Inc. Non-melt thin-wafer laser thermal annealing methods
JP2014086553A (ja) * 2012-10-23 2014-05-12 Toshiba Corp 固体撮像装置および固体撮像装置の製造方法
JP6118757B2 (ja) * 2014-04-24 2017-04-19 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
JP6100200B2 (ja) * 2014-04-24 2017-03-22 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
JP6598436B2 (ja) * 2014-08-08 2019-10-30 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
US10083843B2 (en) 2014-12-17 2018-09-25 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times
FR3083000B1 (fr) * 2018-06-21 2024-11-29 Soitec Silicon On Insulator Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0387754A1 (de) 1989-03-17 1990-09-19 Schott Glaswerke Kathetersystem zur Uebertragung von Laserstrahlung in Gefaesssysteme des menschlichen Koerpers
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3438369B2 (ja) * 1995-01-17 2003-08-18 ソニー株式会社 部材の製造方法
JP2959704B2 (ja) 1995-03-27 1999-10-06 信越半導体株式会社 結合ウェーハの製造方法及びこの方法により製造された結合ウェーハ
JP3707200B2 (ja) * 1997-05-09 2005-10-19 株式会社デンソー 半導体基板の製造方法
US6251754B1 (en) 1997-05-09 2001-06-26 Denso Corporation Semiconductor substrate manufacturing method
JP3864495B2 (ja) * 1997-05-15 2006-12-27 株式会社デンソー 半導体基板の製造方法
JPH11307747A (ja) * 1998-04-17 1999-11-05 Nec Corp Ｓｏｉ基板およびその製造方法
JP3385972B2 (ja) 1998-07-10 2003-03-10 信越半導体株式会社 貼り合わせウェーハの製造方法および貼り合わせウェーハ
FR2781929B1 (fr) * 1998-07-28 2002-08-30 St Microelectronics Sa Capteur d'image a reseau de photodiodes
JP4228419B2 (ja) 1998-07-29 2009-02-25 信越半導体株式会社 Ｓｏｉウエーハの製造方法およびｓｏｉウエーハ
US6979588B2 (en) * 2003-01-29 2005-12-27 Hynix Semiconductor Inc. Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity
JP4046069B2 (ja) * 2003-11-17 2008-02-13 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
JP4181487B2 (ja) * 2003-11-28 2008-11-12 松下電器産業株式会社 固体撮像装置とその製造方法
JP2005259828A (ja) 2004-03-10 2005-09-22 Sony Corp 固体撮像素子及びその製造方法
US7335963B2 (en) * 2004-08-25 2008-02-26 Micron Technology, Inc. Light block for pixel arrays
US7425460B2 (en) * 2004-09-17 2008-09-16 California Institute Of Technology Method for implementation of back-illuminated CMOS or CCD imagers
US7202543B2 (en) * 2005-03-07 2007-04-10 Micron Technology, Inc. Method and structure to reduce optical crosstalk in a solid state imager
US7919827B2 (en) * 2005-03-11 2011-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for reducing noise in CMOS image sensors
KR100710204B1 (ko) * 2005-09-08 2007-04-20 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US7777287B2 (en) * 2006-07-12 2010-08-17 Micron Technology, Inc. System and apparatus providing analytical device based on solid state image sensor
US7781715B2 (en) * 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
JP4649441B2 (ja) * 2006-09-20 2011-03-09 富士フイルム株式会社 裏面照射型撮像素子及びこれを備えた撮像装置
KR100829378B1 (ko) * 2006-12-27 2008-05-13 동부일렉트로닉스 주식회사 이미지 센서 및 이의 제조 방법
US20090200631A1 (en) * 2008-02-08 2009-08-13 Omnivision Technologies, Inc. Backside illuminated imaging sensor with light attenuating layer
JP5288823B2 (ja) * 2008-02-18 2013-09-11 キヤノン株式会社 光電変換装置、及び光電変換装置の製造方法
US7968923B2 (en) * 2008-03-12 2011-06-28 Omnivision Technologies, Inc. Image sensor array with conformal color filters
JP5269454B2 (ja) * 2008-03-25 2013-08-21 株式会社東芝 固体撮像素子
US8211732B2 (en) * 2008-09-11 2012-07-03 Omnivision Technologies, Inc. Image sensor with raised photosensitive elements

Also Published As

Publication number Publication date
USRE47208E1 (en) 2019-01-15
US20140051203A1 (en) 2014-02-20
US9018031B2 (en) 2015-04-28
JP2010219439A (ja) 2010-09-30
WO2010106591A1 (ja) 2010-09-23
US20110316107A1 (en) 2011-12-29

Similar Documents

Publication Publication Date Title
JP5356872B2 (ja) 個体撮像装置の製造方法
JP4211696B2 (ja) 固体撮像装置の製造方法
EP2209140B1 (en) Method for manufacturing solid-state image device
TWI375320B (en) Image sensor and manufacturing method thereof
JP2010503991A (ja) 薄膜ｓｏｉを用いるイメージセンサ
TW201027737A (en) Technique for fabrication of backside illuminated image sensor
TWI431765B (zh) 固態影像拾取裝置及其製造方法、影像拾取裝置、半導體裝置及其製造方法、及半導體基板
US7884391B2 (en) Image sensor and method for manufacturing the same
JP4997879B2 (ja) 半導体装置及びその製造方法並びに固体撮像装置及びその製造方法並びに撮像装置
TW201238041A (en) Solid-state imaging device and manufacturing method of solid-state imaging device
TW200929531A (en) Image sensor and method for manufacturing the same
JPH09331052A (ja) 裏面照射型固体撮像素子およびその製造方法
US20090179242A1 (en) Image sensor and method for manufacturing the same
US8222587B2 (en) Image sensor and method for manufacturing the same
JP2008294479A (ja) 固体撮像装置
US20100093128A1 (en) Method for manufacturing image sensor
JP2009164600A (ja) イメージセンサ及びその製造方法
JPH0613387A (ja) 固体撮像装置
JP2010067735A (ja) 固体撮像装置の製造方法および固体撮像装置の基板の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120306

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120306

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20120306

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130507

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130702

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130806

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130829

R150 Certificate of patent or registration of utility model

Ref document number: 5356872

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250