JP5354940B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5354940B2
JP5354940B2 JP2008073105A JP2008073105A JP5354940B2 JP 5354940 B2 JP5354940 B2 JP 5354940B2 JP 2008073105 A JP2008073105 A JP 2008073105A JP 2008073105 A JP2008073105 A JP 2008073105A JP 5354940 B2 JP5354940 B2 JP 5354940B2
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JP
Japan
Prior art keywords
film
laser
semiconductor film
substrate
semiconductor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008073105A
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English (en)
Japanese (ja)
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JP2008270780A5 (enExample
JP2008270780A (ja
Inventor
貴嗣 小俣
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008073105A priority Critical patent/JP5354940B2/ja
Publication of JP2008270780A publication Critical patent/JP2008270780A/ja
Publication of JP2008270780A5 publication Critical patent/JP2008270780A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008073105A 2007-03-23 2008-03-21 半導体装置の作製方法 Expired - Fee Related JP5354940B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008073105A JP5354940B2 (ja) 2007-03-23 2008-03-21 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007076908 2007-03-23
JP2007076908 2007-03-23
JP2008073105A JP5354940B2 (ja) 2007-03-23 2008-03-21 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008270780A JP2008270780A (ja) 2008-11-06
JP2008270780A5 JP2008270780A5 (enExample) 2011-04-07
JP5354940B2 true JP5354940B2 (ja) 2013-11-27

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Family Applications (1)

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JP2008073105A Expired - Fee Related JP5354940B2 (ja) 2007-03-23 2008-03-21 半導体装置の作製方法

Country Status (3)

Country Link
US (1) US7960261B2 (enExample)
JP (1) JP5354940B2 (enExample)
KR (1) KR101438379B1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8279579B1 (en) * 2007-12-10 2012-10-02 Victor Rivas Alvarez Energy transforming, storing and shielding devices
JP5368261B2 (ja) * 2008-11-06 2013-12-18 ギガフォトン株式会社 極端紫外光源装置、極端紫外光源装置の制御方法
JP5422990B2 (ja) * 2008-12-22 2014-02-19 住友電気工業株式会社 生体成分検出装置
EP2599110A4 (en) * 2009-07-28 2014-04-23 Gigasi Solar Inc SYSTEMS, METHODS AND MATERIALS FOR CRYSTALLIZING SUBSTRATES THROUGH UNDERGLASHING GLASSES AND PRODUCTS MANUFACTURED BY SUCH METHODS
US9265136B2 (en) 2010-02-19 2016-02-16 Gigaphoton Inc. System and method for generating extreme ultraviolet light
JP5864949B2 (ja) 2010-11-29 2016-02-17 ギガフォトン株式会社 極端紫外光生成システム
JP5641958B2 (ja) 2011-01-31 2014-12-17 ギガフォトン株式会社 チャンバ装置およびそれを備える極端紫外光生成装置
JP5816440B2 (ja) 2011-02-23 2015-11-18 ギガフォトン株式会社 光学装置、レーザ装置および極端紫外光生成装置
JP2012199512A (ja) 2011-03-10 2012-10-18 Gigaphoton Inc 極端紫外光生成装置及び極端紫外光生成方法
KR20140003693A (ko) * 2012-06-22 2014-01-10 엘지전자 주식회사 태양 전지의 불순물층 형성용 마스크 및 이의 제조 방법, 그리고 이를 이용한 태양 전지용 불순물층의 제조 방법
TW201528379A (zh) * 2013-12-20 2015-07-16 Applied Materials Inc 雙波長退火方法與設備
JP6495056B2 (ja) 2015-03-06 2019-04-03 株式会社ディスコ 単結晶基板の加工方法
JP2016171214A (ja) * 2015-03-12 2016-09-23 株式会社ディスコ 単結晶基板の加工方法
KR102532225B1 (ko) * 2016-09-13 2023-05-12 삼성디스플레이 주식회사 결정화 방법 및 결정화 장치
JP7120833B2 (ja) * 2018-07-10 2022-08-17 Ｊｓｗアクティナシステム株式会社 レーザ処理装置

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4594471A (en) * 1983-07-13 1986-06-10 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US4713518A (en) * 1984-06-08 1987-12-15 Semiconductor Energy Laboratory Co., Ltd. Electronic device manufacturing methods
JPH0770479B2 (ja) * 1985-02-14 1995-07-31 旭硝子株式会社 半導体装置の製造方法
JPS61269992A (ja) * 1985-05-24 1986-11-29 Hitachi Ltd レ−ザ処理方法および処理装置
JPH0821623B2 (ja) * 1985-09-20 1996-03-04 株式会社日立製作所 レ−ザ処理方法
AU583423B2 (en) * 1985-09-21 1989-04-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device free from the electrical shortage through a semiconductor layer and method for manufacturing same
KR900006772B1 (ko) * 1985-11-06 1990-09-21 세미콘닥터 에너지 라보라토리 컴파니 리미티드 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법
JPH0820638B2 (ja) * 1986-08-08 1996-03-04 株式会社半導体エネルギ−研究所 液晶装置およびその作製方法
US5708252A (en) * 1986-09-26 1998-01-13 Semiconductor Energy Laboratory Co., Ltd. Excimer laser scanning system
JPS6384789A (ja) * 1986-09-26 1988-04-15 Semiconductor Energy Lab Co Ltd 光加工方法
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
JPS63299322A (ja) * 1987-05-29 1988-12-06 Sony Corp 単結晶シリコン膜の形成方法
US6261856B1 (en) * 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US4937129A (en) * 1988-01-06 1990-06-26 Semiconductor Energy Laboratory Co., Ltd. Thin film pattern structure formed on a glass substrate
US5187601A (en) * 1988-03-07 1993-02-16 Semiconductor Energy Laboratory Co., Ltd. Method for making a high contrast liquid crystal display including laser scribing opaque and transparent conductive strips simultaneously
US5017806A (en) * 1990-04-11 1991-05-21 Cornell Research Foundation, Inc. Broadly tunable high repetition rate femtosecond optical parametric oscillator
JP3071851B2 (ja) * 1991-03-25 2000-07-31 株式会社半導体エネルギー研究所 電気光学装置
US5866444A (en) * 1995-03-21 1999-02-02 Semiconductor Energy Laboratory Co. Integrated circuit and method of fabricating the same
JP3236266B2 (ja) 1998-10-27 2001-12-10 鹿児島日本電気株式会社 パターン形成方法
JP3331999B2 (ja) 1999-02-09 2002-10-07 日本電気株式会社 半導体薄膜の製造方法
TW516244B (en) * 1999-09-17 2003-01-01 Semiconductor Energy Lab EL display device and method for manufacturing the same
US6641933B1 (en) * 1999-09-24 2003-11-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting EL display device
US6384427B1 (en) * 1999-10-29 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device
KR100720066B1 (ko) * 1999-11-09 2007-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법
JP3810629B2 (ja) 2000-11-24 2006-08-16 シャープ株式会社 半導体装置およびその半導体装置の製造方法
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI258317B (en) * 2002-01-25 2006-07-11 Semiconductor Energy Lab A display device and method for manufacturing thereof
JP4128368B2 (ja) * 2002-02-14 2008-07-30 株式会社フジクラ 光導波路部品の製造方法
WO2004070810A1 (ja) * 2003-02-05 2004-08-19 Semiconductor Energy Laboratory Co., Ltd. 表示装置の製造方法
WO2004090195A1 (en) * 2003-04-07 2004-10-21 Fuji Photo Film Co. Ltd. Crystalline-si-layer-bearing substrate and its production method, and crystalline si device
KR101167534B1 (ko) * 2003-04-25 2012-07-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 패턴의 제작방법 및 액적 토출장치
WO2004097915A1 (ja) * 2003-04-25 2004-11-11 Semiconductor Energy Laboratory Co., Ltd. 液滴吐出装置、パターンの形成方法、および半導体装置の製造方法
TWI227913B (en) * 2003-05-02 2005-02-11 Au Optronics Corp Method of fabricating polysilicon film by excimer laser crystallization process
US7202155B2 (en) * 2003-08-15 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing wiring and method for manufacturing semiconductor device
EP1542272B1 (en) * 2003-10-06 2016-07-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8101467B2 (en) * 2003-10-28 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same, and liquid crystal television receiver
US7226819B2 (en) * 2003-10-28 2007-06-05 Semiconductor Energy Laboratory Co., Ltd. Methods for forming wiring and manufacturing thin film transistor and droplet discharging method
JP2006148086A (ja) * 2004-10-20 2006-06-08 Semiconductor Energy Lab Co Ltd レーザ照射方法、レーザ照射装置、および半導体装置の作製方法
KR101354162B1 (ko) * 2004-10-20 2014-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 조사방법, 레이저 조사장치, 및 반도체장치 제조방법
US7303977B2 (en) * 2004-11-10 2007-12-04 Intel Corporation Laser micromachining method
JP5094019B2 (ja) * 2005-01-21 2012-12-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7651932B2 (en) * 2005-05-31 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing antenna and method for manufacturing semiconductor device
JP4081580B2 (ja) * 2005-06-22 2008-04-30 株式会社半導体エネルギー研究所 表示装置の作製方法
US20080116183A1 (en) * 2006-11-21 2008-05-22 Palo Alto Research Center Incorporated Light Scanning Mechanism For Scan Displacement Invariant Laser Ablation Apparatus

Also Published As

Publication number Publication date
US7960261B2 (en) 2011-06-14
KR101438379B1 (ko) 2014-09-05
KR20080086846A (ko) 2008-09-26
JP2008270780A (ja) 2008-11-06
US20080233719A1 (en) 2008-09-25

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