JP5348926B2 - Ｓｏｉ基板の製造方法 - Google Patents

Ｓｏｉ基板の製造方法 Download PDF

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Publication number
JP5348926B2
JP5348926B2 JP2008102308A JP2008102308A JP5348926B2 JP 5348926 B2 JP5348926 B2 JP 5348926B2 JP 2008102308 A JP2008102308 A JP 2008102308A JP 2008102308 A JP2008102308 A JP 2008102308A JP 5348926 B2 JP5348926 B2 JP 5348926B2
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Prior art keywords
layer
single crystal
crystal semiconductor
substrate
electrode layer
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Japanese (ja)
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JP2008311621A (ja
JP2008311621A5 (enExample
Inventor
舜平 山崎
康行 荒井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008102308A priority Critical patent/JP5348926B2/ja
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Publication of JP2008311621A5 publication Critical patent/JP2008311621A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008102308A 2007-05-11 2008-04-10 Ｓｏｉ基板の製造方法 Expired - Fee Related JP5348926B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008102308A JP5348926B2 (ja) 2007-05-11 2008-04-10 Ｓｏｉ基板の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007127148 2007-05-11
JP2007127148 2007-05-11
JP2008102308A JP5348926B2 (ja) 2007-05-11 2008-04-10 Ｓｏｉ基板の製造方法

Publications (3)

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JP2008311621A JP2008311621A (ja) 2008-12-25
JP2008311621A5 JP2008311621A5 (enExample) 2011-05-12
JP5348926B2 true JP5348926B2 (ja) 2013-11-20

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JP2008102308A Expired - Fee Related JP5348926B2 (ja) 2007-05-11 2008-04-10 Ｓｏｉ基板の製造方法

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US (1) US7825007B2 (enExample)
JP (1) JP5348926B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
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US5834327A (en) * 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
WO2009001836A1 (en) * 2007-06-28 2008-12-31 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8431451B2 (en) 2007-06-29 2013-04-30 Semicondutor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP5548351B2 (ja) * 2007-11-01 2014-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5469851B2 (ja) * 2007-11-27 2014-04-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7932164B2 (en) * 2008-03-17 2011-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate by using monitor substrate to obtain optimal energy density for laser irradiation of single crystal semiconductor layers
SG160310A1 (en) * 2008-10-02 2010-04-29 Semiconductor Energy Lab Manufacturing method of semiconductor substrate and semiconductor device
WO2011043178A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate
JP5507197B2 (ja) * 2009-10-23 2014-05-28 スタンレー電気株式会社 光半導体素子、光半導体素子の製造方法及び光半導体装置の製造方法
JP5509816B2 (ja) * 2009-11-30 2014-06-04 ソニー株式会社 セパレータ、これを用いた電池および微多孔膜
US9123529B2 (en) 2011-06-21 2015-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
US20140103499A1 (en) * 2012-10-11 2014-04-17 International Business Machines Corporation Advanced handler wafer bonding and debonding
JP6654435B2 (ja) * 2016-01-07 2020-02-26 株式会社ディスコ ウエーハ生成方法
JP6164672B1 (ja) 2016-07-19 2017-07-19 国立研究開発法人産業技術総合研究所 半導体装置およびその製造方法
JP6810578B2 (ja) * 2016-11-18 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法および熱処理方法
US10263107B2 (en) * 2017-05-01 2019-04-16 The Regents Of The University Of California Strain gated transistors and method
US10811320B2 (en) * 2017-09-29 2020-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Footing removal in cut-metal process
US11167375B2 (en) 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
JP7242362B2 (ja) * 2019-03-18 2023-03-20 キオクシア株式会社 半導体装置の製造方法
JP2021150525A (ja) 2020-03-19 2021-09-27 キオクシア株式会社 半導体記憶装置及び半導体記憶装置の製造方法

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JPS6461943A (en) * 1987-09-02 1989-03-08 Seiko Epson Corp Semiconductor device and manufacture thereof
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
JPH1197379A (ja) 1997-07-25 1999-04-09 Denso Corp 半導体基板及び半導体基板の製造方法
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000012864A (ja) * 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP4379943B2 (ja) 1999-04-07 2009-12-09 株式会社デンソー 半導体基板の製造方法および半導体基板製造装置
JP4182323B2 (ja) * 2002-02-27 2008-11-19 ソニー株式会社 複合基板、基板製造方法
US7119365B2 (en) * 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP4103447B2 (ja) * 2002-04-30 2008-06-18 株式会社Ｉｈｉ 大面積単結晶シリコン基板の製造方法
US7256104B2 (en) * 2003-05-21 2007-08-14 Canon Kabushiki Kaisha Substrate manufacturing method and substrate processing apparatus
FR2855908B1 (fr) * 2003-06-06 2005-08-26 Soitec Silicon On Insulator Procede d'obtention d'une structure comprenant au moins un substrat et une couche ultramince
JP4759919B2 (ja) 2004-01-16 2011-08-31 セイコーエプソン株式会社 電気光学装置の製造方法
JP5110772B2 (ja) 2004-02-03 2012-12-26 株式会社半導体エネルギー研究所 半導体薄膜層を有する基板の製造方法
US7148124B1 (en) * 2004-11-18 2006-12-12 Alexander Yuri Usenko Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers
US7691730B2 (en) * 2005-11-22 2010-04-06 Corning Incorporated Large area semiconductor on glass insulator
US7608521B2 (en) * 2006-05-31 2009-10-27 Corning Incorporated Producing SOI structure using high-purity ion shower
US20070281440A1 (en) * 2006-05-31 2007-12-06 Jeffrey Scott Cites Producing SOI structure using ion shower
US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
CN101281912B (zh) * 2007-04-03 2013-01-23 株式会社半导体能源研究所 Soi衬底及其制造方法以及半导体装置
JP5325404B2 (ja) * 2007-09-21 2013-10-23 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法

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US20080280424A1 (en) 2008-11-13
JP2008311621A (ja) 2008-12-25
US7825007B2 (en) 2010-11-02

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