JP5343245B2 - シリコンインターポーザの製造方法 - Google Patents

シリコンインターポーザの製造方法 Download PDF

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Publication number
JP5343245B2
JP5343245B2 JP2008127918A JP2008127918A JP5343245B2 JP 5343245 B2 JP5343245 B2 JP 5343245B2 JP 2008127918 A JP2008127918 A JP 2008127918A JP 2008127918 A JP2008127918 A JP 2008127918A JP 5343245 B2 JP5343245 B2 JP 5343245B2
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Prior art keywords
silicon substrate
hole
forming
silicon
seed layer
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Expired - Fee Related
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JP2008127918A
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English (en)
Japanese (ja)
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JP2009277895A5 (https=
JP2009277895A (ja
Inventor
啓 村山
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2008127918A priority Critical patent/JP5343245B2/ja
Priority to US12/465,898 priority patent/US8026610B2/en
Publication of JP2009277895A publication Critical patent/JP2009277895A/ja
Publication of JP2009277895A5 publication Critical patent/JP2009277895A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07232—Compression bonding, e.g. thermocompression bonding
    • H10W72/07233—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2008127918A 2008-05-15 2008-05-15 シリコンインターポーザの製造方法 Expired - Fee Related JP5343245B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008127918A JP5343245B2 (ja) 2008-05-15 2008-05-15 シリコンインターポーザの製造方法
US12/465,898 US8026610B2 (en) 2008-05-15 2009-05-14 Silicon interposer and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008127918A JP5343245B2 (ja) 2008-05-15 2008-05-15 シリコンインターポーザの製造方法

Publications (3)

Publication Number Publication Date
JP2009277895A JP2009277895A (ja) 2009-11-26
JP2009277895A5 JP2009277895A5 (https=) 2011-03-24
JP5343245B2 true JP5343245B2 (ja) 2013-11-13

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JP2008127918A Expired - Fee Related JP5343245B2 (ja) 2008-05-15 2008-05-15 シリコンインターポーザの製造方法

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US (1) US8026610B2 (https=)
JP (1) JP5343245B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9508484B2 (en) 2012-02-22 2016-11-29 Phoenix Contact Gmbh & Co. Kg Planar transmitter with a layered structure

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JP2011029339A (ja) * 2009-07-23 2011-02-10 Sony Corp 半導体素子およびその製造方法
US8304863B2 (en) * 2010-02-09 2012-11-06 International Business Machines Corporation Electromigration immune through-substrate vias
JP5498864B2 (ja) * 2010-06-07 2014-05-21 新光電気工業株式会社 配線基板及び配線基板の製造方法
JP5608430B2 (ja) 2010-06-07 2014-10-15 新光電気工業株式会社 配線基板及び配線基板の製造方法
KR101692434B1 (ko) 2010-06-28 2017-01-18 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2012119601A (ja) 2010-12-03 2012-06-21 Nec Corp インターポーザ及び半導体装置
WO2012142592A1 (en) * 2011-04-14 2012-10-18 Georgia Tech Research Corporation Through package via structures in panel-based silicon substrates and methods of making the same
CN102811564B (zh) * 2011-05-31 2015-06-17 精材科技股份有限公司 转接板及其制作方法
EP2602818A1 (en) * 2011-12-09 2013-06-12 Ipdia An interposer device
JP5684157B2 (ja) * 2012-01-04 2015-03-11 株式会社東芝 半導体装置
US8698308B2 (en) * 2012-01-31 2014-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structural designs to minimize package defects
US9129943B1 (en) * 2012-03-29 2015-09-08 Amkor Technology, Inc. Embedded component package and fabrication method
TWI484191B (zh) * 2012-09-28 2015-05-11 Hermes Epitek Corp 電路測試探針卡
KR101439306B1 (ko) * 2013-02-13 2014-09-11 전자부품연구원 연성 실리콘 인터포저 및 이의 제작방법
TWI503934B (zh) * 2013-05-09 2015-10-11 日月光半導體製造股份有限公司 半導體元件及其製造方法及半導體封裝結構
US9214433B2 (en) * 2013-05-21 2015-12-15 Xilinx, Inc. Charge damage protection on an interposer for a stacked die assembly
TWM496091U (zh) * 2014-03-26 2015-02-21 賀喜能源股份有限公司 具矽基座的發光二極體及發光二極體燈具
EP3035385A1 (en) * 2014-12-16 2016-06-22 IMEC vzw Semiconductor interposer comprising a schottky diode and a method for fabricating the interposer
US9841548B2 (en) * 2015-06-30 2017-12-12 Apple Inc. Electronic devices with soft input-output components
US10026721B2 (en) * 2015-06-30 2018-07-17 Apple Inc. Electronic devices with soft input-output components
JP2017136711A (ja) 2016-02-02 2017-08-10 セイコーエプソン株式会社 配線基板、ｍｅｍｓデバイス、液体噴射ヘッド及び液体噴射装置
CN108109989A (zh) * 2017-12-15 2018-06-01 西安科锐盛创新科技有限公司 集成电路转接板
CN113228312B (zh) * 2018-12-27 2024-08-13 波主有限公司 半导体发光器件
KR102227215B1 (ko) * 2018-12-27 2021-03-12 안상정 반도체 발광소자
CN113517200B (zh) 2020-05-27 2024-06-07 台湾积体电路制造股份有限公司 半导体器件及其形成方法
EP4244892A1 (de) * 2020-11-16 2023-09-20 TDK Electronics AG Siliziumsubstrat mit esd-schutzelement

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US6291858B1 (en) * 2000-01-03 2001-09-18 International Business Machines Corporation Multistack 3-dimensional high density semiconductor device and method for fabrication
JP2004095849A (ja) * 2002-08-30 2004-03-25 Fujikura Ltd 貫通電極付き半導体基板の製造方法、貫通電極付き半導体デバイスの製造方法
JP4440554B2 (ja) * 2002-09-24 2010-03-24 浜松ホトニクス株式会社 半導体装置
JP4247017B2 (ja) * 2003-03-10 2009-04-02 浜松ホトニクス株式会社 放射線検出器の製造方法
JP4979213B2 (ja) * 2005-08-31 2012-07-18 オンセミコンダクター・トレーディング・リミテッド 回路基板、回路基板の製造方法および回路装置
JP4851163B2 (ja) * 2005-10-31 2012-01-11 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
JP2007311649A (ja) 2006-05-19 2007-11-29 Fuji Electric Systems Co Ltd シリコンインターポーザ基板を用いた高周波回路モジュール装置
JP4961617B2 (ja) * 2007-10-01 2012-06-27 新光電気工業株式会社 配線基板とその製造方法及び半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9508484B2 (en) 2012-02-22 2016-11-29 Phoenix Contact Gmbh & Co. Kg Planar transmitter with a layered structure

Also Published As

Publication number Publication date
US8026610B2 (en) 2011-09-27
US20090283914A1 (en) 2009-11-19
JP2009277895A (ja) 2009-11-26

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