JP5339683B2 - 蛍光体膜の多元真空蒸着法を用いた製造方法 - Google Patents

蛍光体膜の多元真空蒸着法を用いた製造方法 Download PDF

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Publication number
JP5339683B2
JP5339683B2 JP2007052849A JP2007052849A JP5339683B2 JP 5339683 B2 JP5339683 B2 JP 5339683B2 JP 2007052849 A JP2007052849 A JP 2007052849A JP 2007052849 A JP2007052849 A JP 2007052849A JP 5339683 B2 JP5339683 B2 JP 5339683B2
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Japan
Prior art keywords
phosphor film
mol
zinc sulfide
film
sulfide compound
Prior art date
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Expired - Fee Related
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JP2007052849A
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English (en)
Japanese (ja)
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JP2008214461A (ja
JP2008214461A5 (enExample
Inventor
智之 大池
達哉 岩崎
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2007052849A priority Critical patent/JP5339683B2/ja
Priority to US12/034,339 priority patent/US20080213559A1/en
Publication of JP2008214461A publication Critical patent/JP2008214461A/ja
Publication of JP2008214461A5 publication Critical patent/JP2008214461A5/ja
Priority to US12/779,648 priority patent/US20100221420A1/en
Application granted granted Critical
Publication of JP5339683B2 publication Critical patent/JP5339683B2/ja
Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/58—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing copper, silver or gold
    • C09K11/582—Chalcogenides
    • C09K11/584—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
JP2007052849A 2007-03-02 2007-03-02 蛍光体膜の多元真空蒸着法を用いた製造方法 Expired - Fee Related JP5339683B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007052849A JP5339683B2 (ja) 2007-03-02 2007-03-02 蛍光体膜の多元真空蒸着法を用いた製造方法
US12/034,339 US20080213559A1 (en) 2007-03-02 2008-02-20 Phosphor film and method of producing the phosphor film
US12/779,648 US20100221420A1 (en) 2007-03-02 2010-05-13 Phosphor film and method of producing the phosphor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007052849A JP5339683B2 (ja) 2007-03-02 2007-03-02 蛍光体膜の多元真空蒸着法を用いた製造方法

Publications (3)

Publication Number Publication Date
JP2008214461A JP2008214461A (ja) 2008-09-18
JP2008214461A5 JP2008214461A5 (enExample) 2010-04-15
JP5339683B2 true JP5339683B2 (ja) 2013-11-13

Family

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Family Applications (1)

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JP2007052849A Expired - Fee Related JP5339683B2 (ja) 2007-03-02 2007-03-02 蛍光体膜の多元真空蒸着法を用いた製造方法

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Country Link
US (2) US20080213559A1 (enExample)
JP (1) JP5339683B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5441321B2 (ja) * 2007-07-03 2014-03-12 キヤノン株式会社 蛍光体積層膜の製造方法
WO2013011889A1 (ja) * 2011-07-15 2013-01-24 タツモ株式会社 分散型ｅｌ用蛍光体、分散型ｅｌ素子およびこれらの製造方法
DE102011080179A1 (de) * 2011-08-01 2013-02-07 Osram Ag Wellenlängenkonversionskörper und Verfahren zu dessen Herstellung
CN118064132A (zh) * 2024-02-22 2024-05-24 浙江大学杭州国际科创中心 一种ZnS:Cu荧光粉的制备方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608074B2 (ja) * 1981-02-24 1985-02-28 日本電信電話公社 Ｅｌ発光素子
JPS57145174A (en) * 1981-03-04 1982-09-08 Nippon Telegr & Teleph Corp <Ntt> El fluorescent substance and preparation of same
JPS6134890A (ja) * 1984-07-27 1986-02-19 日本電信電話株式会社 電界発光薄膜形成方法
JPS6180792A (ja) * 1984-09-28 1986-04-24 宮田　直之 エレクトロルミネセンス素子の製造法
JPS61240593A (ja) * 1985-04-18 1986-10-25 松下電器産業株式会社 硫化亜鉛系薄膜の製造方法
JP2529563B2 (ja) * 1987-02-03 1996-08-28 日産自動車株式会社 真空蒸着法
JPS63202889A (ja) * 1987-02-17 1988-08-22 クラリオン株式会社 蛍光体薄膜の製造方法および装置
JPS63259067A (ja) * 1987-04-14 1988-10-26 Nippon Sheet Glass Co Ltd 硫化亜鉛薄膜の製造方法
JP2766275B2 (ja) * 1987-12-25 1998-06-18 株式会社東芝 Ｘ線イメージ管
JPH01204991A (ja) * 1988-02-10 1989-08-17 Stanley Electric Co Ltd Ｅｌ用螢光体の製造方法
JPH0574570A (ja) * 1991-09-12 1993-03-26 Fuji Electric Co Ltd エレクトロルミネツセンス発光膜の成膜方法
JP3381292B2 (ja) * 1993-02-26 2003-02-24 日本板硝子株式会社 エレクトロルミネッセンス素子の形成方法
JP2004123786A (ja) * 2002-09-30 2004-04-22 Toshiba Corp 表示装置用蛍光体とその製造方法、およびそれを用いたカラー表示装置
JP2004137354A (ja) * 2002-10-17 2004-05-13 Fuji Photo Film Co Ltd エレクトロルミネッセンス蛍光体
JP2006008806A (ja) * 2004-06-24 2006-01-12 Fuji Photo Film Co Ltd 蛍光体前駆体、エレクトロルミネッセンス蛍光体、それらの製造方法及び分散型エレクトロルミネッセンス素子
JP2006045319A (ja) * 2004-08-03 2006-02-16 Fuji Photo Film Co Ltd 蛍光体粒子の製造方法、蛍光体粒子および分散型エレクトロルミネッセンス素子
JP2006241183A (ja) * 2005-02-28 2006-09-14 Fuji Photo Film Co Ltd エレクトロルミネッセンス蛍光体及びそれを用いたｅｌ素子
US7261838B2 (en) * 2004-12-28 2007-08-28 Osram Sylvania Inc. Electroluminescent phosphor
JP2006312695A (ja) * 2005-05-09 2006-11-16 Toshiba Corp 表示装置用青色発光蛍光体および電界放出型表示装置
JP2007224292A (ja) * 2006-01-27 2007-09-06 Semiconductor Energy Lab Co Ltd 発光材料、発光素子、発光装置並びに電子機器
JP2008010415A (ja) * 2006-06-02 2008-01-17 Semiconductor Energy Lab Co Ltd 発光素子、発光素子の作製方法、発光装置並びに電子機器

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US20100221420A1 (en) 2010-09-02
US20080213559A1 (en) 2008-09-04

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