JP5335397B2 - 露光装置 - Google Patents
露光装置 Download PDFInfo
- Publication number
- JP5335397B2 JP5335397B2 JP2008320382A JP2008320382A JP5335397B2 JP 5335397 B2 JP5335397 B2 JP 5335397B2 JP 2008320382 A JP2008320382 A JP 2008320382A JP 2008320382 A JP2008320382 A JP 2008320382A JP 5335397 B2 JP5335397 B2 JP 5335397B2
- Authority
- JP
- Japan
- Prior art keywords
- projection optical
- optical system
- scanning direction
- substrate
- exposure apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/70—Reflectors in printing beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008320382A JP5335397B2 (ja) | 2008-02-15 | 2008-12-17 | 露光装置 |
| KR1020090011244A KR101037278B1 (ko) | 2008-02-15 | 2009-02-12 | 노광장치 |
| US12/370,959 US8294874B2 (en) | 2008-02-15 | 2009-02-13 | Exposure apparatus |
| TW098104708A TWI414898B (zh) | 2008-02-15 | 2009-02-13 | 曝光設備 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008035040 | 2008-02-15 | ||
| JP2008035040 | 2008-02-15 | ||
| JP2008320382A JP5335397B2 (ja) | 2008-02-15 | 2008-12-17 | 露光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009217244A JP2009217244A (ja) | 2009-09-24 |
| JP2009217244A5 JP2009217244A5 (enExample) | 2012-02-02 |
| JP5335397B2 true JP5335397B2 (ja) | 2013-11-06 |
Family
ID=40997968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008320382A Expired - Fee Related JP5335397B2 (ja) | 2008-02-15 | 2008-12-17 | 露光装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8294874B2 (enExample) |
| JP (1) | JP5335397B2 (enExample) |
| KR (1) | KR101037278B1 (enExample) |
| TW (1) | TWI414898B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5335397B2 (ja) * | 2008-02-15 | 2013-11-06 | キヤノン株式会社 | 露光装置 |
| WO2023282214A1 (ja) * | 2021-07-05 | 2023-01-12 | 株式会社ニコン | 空間光変調ユニットおよび露光装置 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57133447A (en) * | 1981-02-12 | 1982-08-18 | Canon Inc | Variable magnification optical device |
| US4372670A (en) * | 1981-02-23 | 1983-02-08 | Xerox Corporation | Precession scanning system |
| US5614988A (en) * | 1993-12-06 | 1997-03-25 | Nikon Corporation | Projection exposure apparatus and method with a plurality of projection optical units |
| JPH09293676A (ja) * | 1996-04-24 | 1997-11-11 | Nikon Corp | 投影光学系及び投影露光装置 |
| JPH1064807A (ja) * | 1996-08-19 | 1998-03-06 | Nikon Corp | 縮小投影走査型露光装置 |
| DE19757074A1 (de) | 1997-12-20 | 1999-06-24 | Zeiss Carl Fa | Projektionsbelichtungsanlage und Belichtungsverfahren |
| KR20010075157A (ko) * | 1998-09-17 | 2001-08-09 | 오노 시게오 | 투영광학계의 조정방법 |
| KR100827874B1 (ko) * | 2000-05-22 | 2008-05-07 | 가부시키가이샤 니콘 | 노광 장치, 노광 장치의 제조 방법, 노광 방법, 마이크로 장치의 제조 방법, 및 디바이스의 제조 방법 |
| TWI232348B (en) * | 2001-12-26 | 2005-05-11 | Pentax Corp | Projection aligner |
| SE0200547D0 (sv) * | 2002-02-25 | 2002-02-25 | Micronic Laser Systems Ab | An image forming method and apparatus |
| JP4707924B2 (ja) | 2002-08-30 | 2011-06-22 | 株式会社ニコン | 投影光学系、露光装置、及びマイクロデバイスの製造方法 |
| JP4490165B2 (ja) * | 2004-05-18 | 2010-06-23 | 大日本印刷株式会社 | 露光装置 |
| US7283210B2 (en) * | 2005-03-22 | 2007-10-16 | Nikon Corporation | Image shift optic for optical system |
| JP4984810B2 (ja) * | 2006-02-16 | 2012-07-25 | 株式会社ニコン | 露光方法、露光装置及びフォトマスク |
| JP4952182B2 (ja) * | 2006-03-20 | 2012-06-13 | 株式会社ニコン | 走査型露光装置、マイクロデバイスの製造方法、走査露光方法、及びマスク |
| WO2007119292A1 (ja) * | 2006-03-20 | 2007-10-25 | Nikon Corporation | 反射屈折投影光学系、反射屈折光学装置、走査露光装置、マイクロデバイスの製造方法 |
| US20080165333A1 (en) * | 2007-01-04 | 2008-07-10 | Nikon Corporation | Projection optical apparatus, exposure method and apparatus, photomask, and device and photomask manufacturing method |
| JP5335397B2 (ja) * | 2008-02-15 | 2013-11-06 | キヤノン株式会社 | 露光装置 |
-
2008
- 2008-12-17 JP JP2008320382A patent/JP5335397B2/ja not_active Expired - Fee Related
-
2009
- 2009-02-12 KR KR1020090011244A patent/KR101037278B1/ko not_active Expired - Fee Related
- 2009-02-13 TW TW098104708A patent/TWI414898B/zh not_active IP Right Cessation
- 2009-02-13 US US12/370,959 patent/US8294874B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20090213348A1 (en) | 2009-08-27 |
| JP2009217244A (ja) | 2009-09-24 |
| US8294874B2 (en) | 2012-10-23 |
| KR101037278B1 (ko) | 2011-05-26 |
| KR20090088805A (ko) | 2009-08-20 |
| TWI414898B (zh) | 2013-11-11 |
| TW200951627A (en) | 2009-12-16 |
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