TWI414898B - 曝光設備 - Google Patents

曝光設備 Download PDF

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Publication number
TWI414898B
TWI414898B TW098104708A TW98104708A TWI414898B TW I414898 B TWI414898 B TW I414898B TW 098104708 A TW098104708 A TW 098104708A TW 98104708 A TW98104708 A TW 98104708A TW I414898 B TWI414898 B TW I414898B
Authority
TW
Taiwan
Prior art keywords
projection optical
optical system
imaging
substrate
optical systems
Prior art date
Application number
TW098104708A
Other languages
English (en)
Chinese (zh)
Other versions
TW200951627A (en
Inventor
河野道生
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW200951627A publication Critical patent/TW200951627A/zh
Application granted granted Critical
Publication of TWI414898B publication Critical patent/TWI414898B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00Photographic printing apparatus
    • G03B27/32Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52Details
    • G03B27/70Reflectors in printing beam
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70233Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW098104708A 2008-02-15 2009-02-13 曝光設備 TWI414898B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008035040 2008-02-15
JP2008320382A JP5335397B2 (ja) 2008-02-15 2008-12-17 露光装置

Publications (2)

Publication Number Publication Date
TW200951627A TW200951627A (en) 2009-12-16
TWI414898B true TWI414898B (zh) 2013-11-11

Family

ID=40997968

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098104708A TWI414898B (zh) 2008-02-15 2009-02-13 曝光設備

Country Status (4)

Country Link
US (1) US8294874B2 (enExample)
JP (1) JP5335397B2 (enExample)
KR (1) KR101037278B1 (enExample)
TW (1) TWI414898B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5335397B2 (ja) * 2008-02-15 2013-11-06 キヤノン株式会社 露光装置
WO2023282214A1 (ja) * 2021-07-05 2023-01-12 株式会社ニコン 空間光変調ユニットおよび露光装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09293676A (ja) * 1996-04-24 1997-11-11 Nikon Corp 投影光学系及び投影露光装置
JPH1064807A (ja) * 1996-08-19 1998-03-06 Nikon Corp 縮小投影走査型露光装置
JPH11265848A (ja) * 1997-12-20 1999-09-28 Carl Zeiss:Fa 投影露光装置及び露光方法
JP2005332847A (ja) * 2004-05-18 2005-12-02 Dainippon Printing Co Ltd 露光装置
JP2007249169A (ja) * 2006-02-16 2007-09-27 Nikon Corp 露光方法、露光装置、フォトマスク及びフォトマスクの製造方法
WO2007119292A1 (ja) * 2006-03-20 2007-10-25 Nikon Corporation 反射屈折投影光学系、反射屈折光学装置、走査露光装置、マイクロデバイスの製造方法
JP2007286580A (ja) * 2006-03-20 2007-11-01 Nikon Corp 走査型露光装置、マイクロデバイスの製造方法、マスク、投影光学装置、及びマスクの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133447A (en) * 1981-02-12 1982-08-18 Canon Inc Variable magnification optical device
US4372670A (en) * 1981-02-23 1983-02-08 Xerox Corporation Precession scanning system
US5614988A (en) * 1993-12-06 1997-03-25 Nikon Corporation Projection exposure apparatus and method with a plurality of projection optical units
KR20010075157A (ko) * 1998-09-17 2001-08-09 오노 시게오 투영광학계의 조정방법
KR100827874B1 (ko) * 2000-05-22 2008-05-07 가부시키가이샤 니콘 노광 장치, 노광 장치의 제조 방법, 노광 방법, 마이크로 장치의 제조 방법, 및 디바이스의 제조 방법
TWI232348B (en) * 2001-12-26 2005-05-11 Pentax Corp Projection aligner
SE0200547D0 (sv) * 2002-02-25 2002-02-25 Micronic Laser Systems Ab An image forming method and apparatus
JP4707924B2 (ja) 2002-08-30 2011-06-22 株式会社ニコン 投影光学系、露光装置、及びマイクロデバイスの製造方法
US7283210B2 (en) * 2005-03-22 2007-10-16 Nikon Corporation Image shift optic for optical system
US20080165333A1 (en) * 2007-01-04 2008-07-10 Nikon Corporation Projection optical apparatus, exposure method and apparatus, photomask, and device and photomask manufacturing method
JP5335397B2 (ja) * 2008-02-15 2013-11-06 キヤノン株式会社 露光装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09293676A (ja) * 1996-04-24 1997-11-11 Nikon Corp 投影光学系及び投影露光装置
JPH1064807A (ja) * 1996-08-19 1998-03-06 Nikon Corp 縮小投影走査型露光装置
JPH11265848A (ja) * 1997-12-20 1999-09-28 Carl Zeiss:Fa 投影露光装置及び露光方法
JP2005332847A (ja) * 2004-05-18 2005-12-02 Dainippon Printing Co Ltd 露光装置
JP2007249169A (ja) * 2006-02-16 2007-09-27 Nikon Corp 露光方法、露光装置、フォトマスク及びフォトマスクの製造方法
WO2007119292A1 (ja) * 2006-03-20 2007-10-25 Nikon Corporation 反射屈折投影光学系、反射屈折光学装置、走査露光装置、マイクロデバイスの製造方法
JP2007286580A (ja) * 2006-03-20 2007-11-01 Nikon Corp 走査型露光装置、マイクロデバイスの製造方法、マスク、投影光学装置、及びマスクの製造方法

Also Published As

Publication number Publication date
US20090213348A1 (en) 2009-08-27
JP2009217244A (ja) 2009-09-24
US8294874B2 (en) 2012-10-23
KR101037278B1 (ko) 2011-05-26
JP5335397B2 (ja) 2013-11-06
KR20090088805A (ko) 2009-08-20
TW200951627A (en) 2009-12-16

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