JP5322800B2 - 垂直共振器型面発光レーザ - Google Patents

垂直共振器型面発光レーザ Download PDF

Info

Publication number
JP5322800B2
JP5322800B2 JP2009145550A JP2009145550A JP5322800B2 JP 5322800 B2 JP5322800 B2 JP 5322800B2 JP 2009145550 A JP2009145550 A JP 2009145550A JP 2009145550 A JP2009145550 A JP 2009145550A JP 5322800 B2 JP5322800 B2 JP 5322800B2
Authority
JP
Japan
Prior art keywords
layer
dbr
semiconductor
multilayer semiconductor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009145550A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011003725A5 (enExample
JP2011003725A (ja
Inventor
武志 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009145550A priority Critical patent/JP5322800B2/ja
Priority to US12/817,514 priority patent/US8340149B2/en
Publication of JP2011003725A publication Critical patent/JP2011003725A/ja
Publication of JP2011003725A5 publication Critical patent/JP2011003725A5/ja
Application granted granted Critical
Publication of JP5322800B2 publication Critical patent/JP5322800B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2009145550A 2009-06-18 2009-06-18 垂直共振器型面発光レーザ Expired - Fee Related JP5322800B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009145550A JP5322800B2 (ja) 2009-06-18 2009-06-18 垂直共振器型面発光レーザ
US12/817,514 US8340149B2 (en) 2009-06-18 2010-06-17 Vertical cavity surface emitting laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009145550A JP5322800B2 (ja) 2009-06-18 2009-06-18 垂直共振器型面発光レーザ

Publications (3)

Publication Number Publication Date
JP2011003725A JP2011003725A (ja) 2011-01-06
JP2011003725A5 JP2011003725A5 (enExample) 2012-07-26
JP5322800B2 true JP5322800B2 (ja) 2013-10-23

Family

ID=43354345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009145550A Expired - Fee Related JP5322800B2 (ja) 2009-06-18 2009-06-18 垂直共振器型面発光レーザ

Country Status (2)

Country Link
US (1) US8340149B2 (enExample)
JP (1) JP5322800B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5515722B2 (ja) * 2009-12-22 2014-06-11 富士ゼロックス株式会社 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
JP6056154B2 (ja) * 2011-07-21 2017-01-11 富士ゼロックス株式会社 発光素子、発光素子アレイ、光書込みヘッドおよび画像形成装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963576A (en) * 1997-08-04 1999-10-05 Motorola, Inc. Annular waveguide vertical cavity surface emitting laser and method of fabrication
US6185241B1 (en) * 1998-10-29 2001-02-06 Xerox Corporation Metal spatial filter to enhance model reflectivity in a vertical cavity surface emitting laser
US6144682A (en) 1998-10-29 2000-11-07 Xerox Corporation Spatial absorptive and phase shift filter layer to reduce modal reflectivity for higher order modes in a vertical cavity surface emitting laser
JP2003051642A (ja) * 2001-08-03 2003-02-21 Furukawa Electric Co Ltd:The 面発光型半導体レーザ素子
JP4113576B2 (ja) * 2002-05-28 2008-07-09 株式会社リコー 面発光半導体レーザおよび光伝送モジュールおよび光交換装置および光伝送システム
US20050063440A1 (en) * 2003-09-18 2005-03-24 Deppe Dennis G. Epitaxial mode-confined vertical cavity surface emitting laser (VCSEL) and method of manufacturing same
US7505503B2 (en) * 2007-02-23 2009-03-17 Cosemi Technologies, Inc. Vertical cavity surface emitting laser (VCSEL) and related method

Also Published As

Publication number Publication date
JP2011003725A (ja) 2011-01-06
US20100322277A1 (en) 2010-12-23
US8340149B2 (en) 2012-12-25

Similar Documents

Publication Publication Date Title
JP4066654B2 (ja) 面発光型半導体レーザ装置及びその製造方法
US7499481B2 (en) Surface-emitting laser and method for producing the same
JP2018517301A (ja) 垂直共振器型面発光レーザ
JP2010103498A (ja) 面発光レーザ、およびその製造方法
US8218596B2 (en) Vertical cavity surface emitting laser and method of manufacturing the same
JP3188658B2 (ja) 面発光半導体レーザおよびその製造方法
US8228964B2 (en) Surface emitting laser, surface emitting laser array, and image formation apparatus
JP3800856B2 (ja) 面発光レーザ及び面発光レーザアレイ
JP5006242B2 (ja) 面発光半導体レーザ素子
US8389308B2 (en) Method for producing surface emitting semiconductor device
JP2001085788A (ja) 面発光型半導体レーザ素子及び面発光型半導体レーザアレイ
JP4760380B2 (ja) 面発光レーザ
JP6004063B1 (ja) 面発光型半導体レーザ素子の製造方法
JP2009170508A (ja) 面発光半導体レーザ及びその製造方法
JP4235674B2 (ja) 面発光レーザ装置およびその製造方法
JP5322800B2 (ja) 垂直共振器型面発光レーザ
JP5074786B2 (ja) 面発光レーザ素子の製造方法および面発光レーザ素子
JP2004031863A (ja) 面発光型半導体レーザ素子
JP2009246252A (ja) 面発光レーザ素子及び面発光レーザアレイ
JP5261201B2 (ja) 面発光レーザ、面発光レーザアレイ及びその製造方法
JP4845055B2 (ja) 面発光レーザ素子の製造方法および面発光レーザ素子
JP2005085836A (ja) 面発光半導体レーザ素子及びその製造方法
JP5041421B2 (ja) 面発光レーザ素子の製造方法および面発光レーザ素子
JP4999070B2 (ja) 面発光レーザ
JP2004207586A (ja) 面発光型半導体レーザ素子及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120612

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120612

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130531

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130618

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130716

R151 Written notification of patent or utility model registration

Ref document number: 5322800

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D03

LAPS Cancellation because of no payment of annual fees