JP2011003725A5 - - Google Patents

Download PDF

Info

Publication number
JP2011003725A5
JP2011003725A5 JP2009145550A JP2009145550A JP2011003725A5 JP 2011003725 A5 JP2011003725 A5 JP 2011003725A5 JP 2009145550 A JP2009145550 A JP 2009145550A JP 2009145550 A JP2009145550 A JP 2009145550A JP 2011003725 A5 JP2011003725 A5 JP 2011003725A5
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
multilayer semiconductor
laser
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009145550A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011003725A (ja
JP5322800B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009145550A priority Critical patent/JP5322800B2/ja
Priority claimed from JP2009145550A external-priority patent/JP5322800B2/ja
Priority to US12/817,514 priority patent/US8340149B2/en
Publication of JP2011003725A publication Critical patent/JP2011003725A/ja
Publication of JP2011003725A5 publication Critical patent/JP2011003725A5/ja
Application granted granted Critical
Publication of JP5322800B2 publication Critical patent/JP5322800B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009145550A 2009-06-18 2009-06-18 垂直共振器型面発光レーザ Expired - Fee Related JP5322800B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009145550A JP5322800B2 (ja) 2009-06-18 2009-06-18 垂直共振器型面発光レーザ
US12/817,514 US8340149B2 (en) 2009-06-18 2010-06-17 Vertical cavity surface emitting laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009145550A JP5322800B2 (ja) 2009-06-18 2009-06-18 垂直共振器型面発光レーザ

Publications (3)

Publication Number Publication Date
JP2011003725A JP2011003725A (ja) 2011-01-06
JP2011003725A5 true JP2011003725A5 (enExample) 2012-07-26
JP5322800B2 JP5322800B2 (ja) 2013-10-23

Family

ID=43354345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009145550A Expired - Fee Related JP5322800B2 (ja) 2009-06-18 2009-06-18 垂直共振器型面発光レーザ

Country Status (2)

Country Link
US (1) US8340149B2 (enExample)
JP (1) JP5322800B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5515722B2 (ja) * 2009-12-22 2014-06-11 富士ゼロックス株式会社 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
JP6056154B2 (ja) * 2011-07-21 2017-01-11 富士ゼロックス株式会社 発光素子、発光素子アレイ、光書込みヘッドおよび画像形成装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963576A (en) * 1997-08-04 1999-10-05 Motorola, Inc. Annular waveguide vertical cavity surface emitting laser and method of fabrication
US6185241B1 (en) * 1998-10-29 2001-02-06 Xerox Corporation Metal spatial filter to enhance model reflectivity in a vertical cavity surface emitting laser
US6144682A (en) 1998-10-29 2000-11-07 Xerox Corporation Spatial absorptive and phase shift filter layer to reduce modal reflectivity for higher order modes in a vertical cavity surface emitting laser
JP2003051642A (ja) * 2001-08-03 2003-02-21 Furukawa Electric Co Ltd:The 面発光型半導体レーザ素子
JP4113576B2 (ja) * 2002-05-28 2008-07-09 株式会社リコー 面発光半導体レーザおよび光伝送モジュールおよび光交換装置および光伝送システム
US20050063440A1 (en) * 2003-09-18 2005-03-24 Deppe Dennis G. Epitaxial mode-confined vertical cavity surface emitting laser (VCSEL) and method of manufacturing same
US7505503B2 (en) * 2007-02-23 2009-03-17 Cosemi Technologies, Inc. Vertical cavity surface emitting laser (VCSEL) and related method

Similar Documents

Publication Publication Date Title
JP2011124301A5 (enExample)
JP5235878B2 (ja) 半導体発光素子
TWI552404B (zh) 發光單元、發光裝置、照明裝置、及發光單元製造方法
JP2009105376A5 (enExample)
WO2012015153A3 (en) Light emitting diode having distributed bragg reflector
JP2014515560A5 (enExample)
JP2011171739A5 (enExample)
WO2011031098A3 (ko) 반도체 발광소자
JP2011513959A5 (enExample)
JP2013125968A5 (enExample)
TW201440250A (zh) 發光二極體晶粒及其製造方法
TWI456792B (zh) 發光元件及其製造方法
JP2015119136A5 (enExample)
WO2018221042A1 (ja) 発光素子および発光素子の製造方法
US20150063393A1 (en) Vertical cavity surface emitting laser
JP2010244808A5 (enExample)
JP2010050255A5 (enExample)
JP2013123057A5 (enExample)
JP2012134452A5 (enExample)
JP2007081399A5 (enExample)
JP2015041688A (ja) 半導体レーザ装置
JP2011003725A5 (enExample)
JP2011511446A5 (enExample)
JP2013074001A5 (enExample)
JP2011508441A5 (enExample)