JP2011511446A5 - - Google Patents

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Publication number
JP2011511446A5
JP2011511446A5 JP2010544576A JP2010544576A JP2011511446A5 JP 2011511446 A5 JP2011511446 A5 JP 2011511446A5 JP 2010544576 A JP2010544576 A JP 2010544576A JP 2010544576 A JP2010544576 A JP 2010544576A JP 2011511446 A5 JP2011511446 A5 JP 2011511446A5
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JP
Japan
Prior art keywords
semiconductor stack
semiconductor
optoelectronic component
active layer
component according
Prior art date
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Application number
JP2010544576A
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English (en)
Japanese (ja)
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JP5264935B2 (ja
JP2011511446A (ja
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Priority claimed from DE102008006988A external-priority patent/DE102008006988A1/de
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Publication of JP2011511446A publication Critical patent/JP2011511446A/ja
Publication of JP2011511446A5 publication Critical patent/JP2011511446A5/ja
Application granted granted Critical
Publication of JP5264935B2 publication Critical patent/JP5264935B2/ja
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Anticipated expiration legal-status Critical

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JP2010544576A 2008-01-31 2009-01-19 オプトエレクトロニクス部品およびその製造方法 Active JP5264935B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008006988.4 2008-01-31
DE102008006988A DE102008006988A1 (de) 2008-01-31 2008-01-31 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
PCT/DE2009/000056 WO2009094980A1 (de) 2008-01-31 2009-01-19 Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Publications (3)

Publication Number Publication Date
JP2011511446A JP2011511446A (ja) 2011-04-07
JP2011511446A5 true JP2011511446A5 (enExample) 2012-03-01
JP5264935B2 JP5264935B2 (ja) 2013-08-14

Family

ID=40605732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010544576A Active JP5264935B2 (ja) 2008-01-31 2009-01-19 オプトエレクトロニクス部品およびその製造方法

Country Status (8)

Country Link
US (1) US8686451B2 (enExample)
EP (2) EP2235759B9 (enExample)
JP (1) JP5264935B2 (enExample)
KR (2) KR101640360B1 (enExample)
CN (1) CN101933171B (enExample)
DE (1) DE102008006988A1 (enExample)
TW (1) TWI399867B (enExample)
WO (1) WO2009094980A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5755511B2 (ja) * 2011-06-14 2015-07-29 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
DE102015107577A1 (de) * 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102016113002B4 (de) * 2016-07-14 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen
US10862006B2 (en) * 2018-08-17 2020-12-08 Seoul Viosys Co., Ltd. Light emitting device
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate

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JP2003279955A (ja) 2002-03-18 2003-10-02 Giantplus Technology Co Ltd 半透過式カラー液晶ディスプレイ
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JP2006032315A (ja) 2004-06-14 2006-02-02 Seiko Epson Corp 発光装置、電子機器、投射型表示装置、ラインヘッドおよび画像形成装置
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
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JP4653671B2 (ja) 2005-03-14 2011-03-16 株式会社東芝 発光装置
JP4353125B2 (ja) 2005-04-06 2009-10-28 住友電気工業株式会社 発光素子およびその製造方法
JP2007158133A (ja) 2005-12-06 2007-06-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP2007273975A (ja) * 2006-03-10 2007-10-18 Matsushita Electric Works Ltd 発光素子
US20070284565A1 (en) 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
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JP2008005140A (ja) 2006-06-21 2008-01-10 Kyocera Mita Corp 画像読取装置及びこれを備える画像形成装置
US8163581B1 (en) * 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices

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