TWI399867B - 光電組件及光電組件之製造方法 - Google Patents

光電組件及光電組件之製造方法 Download PDF

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Publication number
TWI399867B
TWI399867B TW098102210A TW98102210A TWI399867B TW I399867 B TWI399867 B TW I399867B TW 098102210 A TW098102210 A TW 098102210A TW 98102210 A TW98102210 A TW 98102210A TW I399867 B TWI399867 B TW I399867B
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Taiwan
Prior art keywords
semiconductor layer
layer stack
layer
stack
radiation
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TW098102210A
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English (en)
Chinese (zh)
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TW200947762A (en
Inventor
尼可勞斯 曼威瑟
柏索德 韓
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歐斯朗奧托半導體股份有限公司
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Publication of TW200947762A publication Critical patent/TW200947762A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW098102210A 2008-01-31 2009-01-21 光電組件及光電組件之製造方法 TWI399867B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008006988A DE102008006988A1 (de) 2008-01-31 2008-01-31 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements

Publications (2)

Publication Number Publication Date
TW200947762A TW200947762A (en) 2009-11-16
TWI399867B true TWI399867B (zh) 2013-06-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW098102210A TWI399867B (zh) 2008-01-31 2009-01-21 光電組件及光電組件之製造方法

Country Status (8)

Country Link
US (1) US8686451B2 (enExample)
EP (2) EP2235759B9 (enExample)
JP (1) JP5264935B2 (enExample)
KR (2) KR101640360B1 (enExample)
CN (1) CN101933171B (enExample)
DE (1) DE102008006988A1 (enExample)
TW (1) TWI399867B (enExample)
WO (1) WO2009094980A1 (enExample)

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JP5755511B2 (ja) * 2011-06-14 2015-07-29 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
DE102015107577A1 (de) * 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102016113002B4 (de) * 2016-07-14 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen
US10862006B2 (en) * 2018-08-17 2020-12-08 Seoul Viosys Co., Ltd. Light emitting device
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate

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JPH0758418A (ja) * 1993-07-12 1995-03-03 Philips Electron Nv オプトエレクトロニック半導体装置
WO1999057788A2 (de) * 1998-04-30 1999-11-11 Osram Opto Semiconductors Gmbh & Co. Ohg Lichtemissions-halbleitereinrichtung
US6487230B1 (en) * 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
TW516246B (en) * 2000-08-08 2003-01-01 Osram Opto Semiconductors Gmbh Semiconductor-chip for optoelectronics and its production method
TW200411946A (en) * 2002-12-31 2004-07-01 Univ Nat Taiwan Optoelectronic transmitter
US20050230693A1 (en) * 2004-04-14 2005-10-20 Genesis Photonics Inc. Single-chip LED with three luminescent spectrums of red, blue and green wavelengths
TW200539490A (en) * 2004-04-29 2005-12-01 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor-chip and method to form a contact-structure for the electrical contact of an optoelectronic semiconductor-chip
TW200729557A (en) * 2004-02-20 2007-08-01 Osram Opto Semiconductors Gmbh Optoelectronic component, device with several optoelectronic components and method to produce an optoelectronic component

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US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5917202A (en) * 1995-12-21 1999-06-29 Hewlett-Packard Company Highly reflective contacts for light emitting semiconductor devices
DE19625622A1 (de) * 1996-06-26 1998-01-02 Siemens Ag Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6320206B1 (en) 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
JP4496596B2 (ja) 2000-03-27 2010-07-07 ソニー株式会社 発光装置
JP2003163373A (ja) 2001-11-26 2003-06-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2003279955A (ja) 2002-03-18 2003-10-02 Giantplus Technology Co Ltd 半透過式カラー液晶ディスプレイ
TW591811B (en) * 2003-01-02 2004-06-11 Epitech Technology Corp Ltd Color mixing light emitting diode
JP2003332619A (ja) * 2003-06-09 2003-11-21 Toyoda Gosei Co Ltd 半導体発光素子
DE10354936B4 (de) 2003-09-30 2012-02-16 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement
KR20060127845A (ko) 2003-12-05 2006-12-13 파이오니아 가부시키가이샤 반도체 레이저 장치의 제조 방법
TWI233218B (en) 2004-01-08 2005-05-21 Pamelan Company Ltd One dimensional photonic crystal and light emitting device made from the same
DE102004004765A1 (de) 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
JP2005276899A (ja) 2004-03-23 2005-10-06 Shin Etsu Handotai Co Ltd 発光素子
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DE102004026125A1 (de) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zu dessen Herstellung
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US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7521856B2 (en) * 2005-01-26 2009-04-21 Osram Opto Semiconductors Gmbh OLED device
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JP4353125B2 (ja) 2005-04-06 2009-10-28 住友電気工業株式会社 発光素子およびその製造方法
JP2007158133A (ja) 2005-12-06 2007-06-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP2007273975A (ja) * 2006-03-10 2007-10-18 Matsushita Electric Works Ltd 発光素子
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US8163581B1 (en) * 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04307783A (ja) * 1991-01-23 1992-10-29 Philips Gloeilampenfab:Nv オプト−エレクトロニク半導体デバイス
JPH0758418A (ja) * 1993-07-12 1995-03-03 Philips Electron Nv オプトエレクトロニック半導体装置
US6487230B1 (en) * 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
WO1999057788A2 (de) * 1998-04-30 1999-11-11 Osram Opto Semiconductors Gmbh & Co. Ohg Lichtemissions-halbleitereinrichtung
TW516246B (en) * 2000-08-08 2003-01-01 Osram Opto Semiconductors Gmbh Semiconductor-chip for optoelectronics and its production method
TW200411946A (en) * 2002-12-31 2004-07-01 Univ Nat Taiwan Optoelectronic transmitter
TW200729557A (en) * 2004-02-20 2007-08-01 Osram Opto Semiconductors Gmbh Optoelectronic component, device with several optoelectronic components and method to produce an optoelectronic component
US20050230693A1 (en) * 2004-04-14 2005-10-20 Genesis Photonics Inc. Single-chip LED with three luminescent spectrums of red, blue and green wavelengths
TW200539490A (en) * 2004-04-29 2005-12-01 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor-chip and method to form a contact-structure for the electrical contact of an optoelectronic semiconductor-chip

Also Published As

Publication number Publication date
US20110175121A1 (en) 2011-07-21
TW200947762A (en) 2009-11-16
JP5264935B2 (ja) 2013-08-14
DE102008006988A1 (de) 2009-08-06
EP2235759B1 (de) 2018-05-16
KR101573095B1 (ko) 2015-11-30
JP2011511446A (ja) 2011-04-07
KR101640360B1 (ko) 2016-07-15
KR20100109562A (ko) 2010-10-08
EP3327796B1 (de) 2023-03-29
EP2235759B9 (de) 2018-09-19
EP3327796A1 (de) 2018-05-30
CN101933171A (zh) 2010-12-29
WO2009094980A1 (de) 2009-08-06
KR20150136545A (ko) 2015-12-07
EP2235759A1 (de) 2010-10-06
US8686451B2 (en) 2014-04-01
CN101933171B (zh) 2013-10-30

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