CN101933171B - 光电子器件和用于制造光电子器件的方法 - Google Patents

光电子器件和用于制造光电子器件的方法 Download PDF

Info

Publication number
CN101933171B
CN101933171B CN2009801037496A CN200980103749A CN101933171B CN 101933171 B CN101933171 B CN 101933171B CN 2009801037496 A CN2009801037496 A CN 2009801037496A CN 200980103749 A CN200980103749 A CN 200980103749A CN 101933171 B CN101933171 B CN 101933171B
Authority
CN
China
Prior art keywords
semiconductor layer
layer
stacked semiconductor
interarea
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2009801037496A
Other languages
English (en)
Chinese (zh)
Other versions
CN101933171A (zh
Inventor
N·格梅因韦泽
B·哈恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN101933171A publication Critical patent/CN101933171A/zh
Application granted granted Critical
Publication of CN101933171B publication Critical patent/CN101933171B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN2009801037496A 2008-01-31 2009-01-19 光电子器件和用于制造光电子器件的方法 Active CN101933171B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008006988.4 2008-01-31
DE1020080069884 2008-01-31
DE102008006988A DE102008006988A1 (de) 2008-01-31 2008-01-31 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
PCT/DE2009/000056 WO2009094980A1 (de) 2008-01-31 2009-01-19 Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Publications (2)

Publication Number Publication Date
CN101933171A CN101933171A (zh) 2010-12-29
CN101933171B true CN101933171B (zh) 2013-10-30

Family

ID=40605732

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801037496A Active CN101933171B (zh) 2008-01-31 2009-01-19 光电子器件和用于制造光电子器件的方法

Country Status (8)

Country Link
US (1) US8686451B2 (enExample)
EP (2) EP2235759B9 (enExample)
JP (1) JP5264935B2 (enExample)
KR (2) KR101640360B1 (enExample)
CN (1) CN101933171B (enExample)
DE (1) DE102008006988A1 (enExample)
TW (1) TWI399867B (enExample)
WO (1) WO2009094980A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5755511B2 (ja) * 2011-06-14 2015-07-29 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
DE102015107577A1 (de) * 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102016113002B4 (de) * 2016-07-14 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen
US10862006B2 (en) * 2018-08-17 2020-12-08 Seoul Viosys Co., Ltd. Light emitting device
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1298553A (zh) * 1998-04-30 2001-06-06 西门子公司 发光半导体器件
EP1608029A2 (en) * 2004-06-14 2005-12-21 Seiko Epson Corporation Light-emitting device, electronic apparatus, projection-type display device, line head, and image forming device

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9100103A (nl) 1991-01-23 1992-08-17 Philips Nv Halfgeleiderdiodelaser met monitordiode.
BE1007282A3 (nl) 1993-07-12 1995-05-09 Philips Electronics Nv Opto-electronische halfgeleiderinrichting met een array van halfgeleiderdiodelasers en werkwijze ter vervaardiging daarvan.
US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5917202A (en) * 1995-12-21 1999-06-29 Hewlett-Packard Company Highly reflective contacts for light emitting semiconductor devices
DE19625622A1 (de) * 1996-06-26 1998-01-02 Siemens Ag Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6320206B1 (en) 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
JP4496596B2 (ja) 2000-03-27 2010-07-07 ソニー株式会社 発光装置
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
JP2003163373A (ja) 2001-11-26 2003-06-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2003279955A (ja) 2002-03-18 2003-10-02 Giantplus Technology Co Ltd 半透過式カラー液晶ディスプレイ
TW586240B (en) 2002-12-31 2004-05-01 Univ Nat Taiwan Photonic transmitter
TW591811B (en) * 2003-01-02 2004-06-11 Epitech Technology Corp Ltd Color mixing light emitting diode
JP2003332619A (ja) * 2003-06-09 2003-11-21 Toyoda Gosei Co Ltd 半導体発光素子
DE10354936B4 (de) 2003-09-30 2012-02-16 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement
KR20060127845A (ko) 2003-12-05 2006-12-13 파이오니아 가부시키가이샤 반도체 레이저 장치의 제조 방법
TWI233218B (en) 2004-01-08 2005-05-21 Pamelan Company Ltd One dimensional photonic crystal and light emitting device made from the same
DE102004004765A1 (de) 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
US8835937B2 (en) 2004-02-20 2014-09-16 Osram Opto Semiconductors Gmbh Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component
JP2005276899A (ja) 2004-03-23 2005-10-06 Shin Etsu Handotai Co Ltd 発光素子
TWI243489B (en) * 2004-04-14 2005-11-11 Genesis Photonics Inc Single chip light emitting diode with red, blue and green three wavelength light emitting spectra
DE102004025684B4 (de) 2004-04-29 2024-08-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Ausbilden einer Kontaktstruktur zur elektrischen Kontaktierung eines optoelektronischen Halbleiterchips
US7332365B2 (en) 2004-05-18 2008-02-19 Cree, Inc. Method for fabricating group-III nitride devices and devices fabricated using method
DE102004026125A1 (de) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zu dessen Herstellung
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7521856B2 (en) * 2005-01-26 2009-04-21 Osram Opto Semiconductors Gmbh OLED device
JP4653671B2 (ja) 2005-03-14 2011-03-16 株式会社東芝 発光装置
JP4353125B2 (ja) 2005-04-06 2009-10-28 住友電気工業株式会社 発光素子およびその製造方法
JP2007158133A (ja) 2005-12-06 2007-06-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP2007273975A (ja) * 2006-03-10 2007-10-18 Matsushita Electric Works Ltd 発光素子
US20070284565A1 (en) 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
JP2008001540A (ja) 2006-06-21 2008-01-10 Mitsubishi Cable Ind Ltd 窒化物半導体結晶の製造方法
JP2008005140A (ja) 2006-06-21 2008-01-10 Kyocera Mita Corp 画像読取装置及びこれを備える画像形成装置
US8163581B1 (en) * 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1298553A (zh) * 1998-04-30 2001-06-06 西门子公司 发光半导体器件
EP1608029A2 (en) * 2004-06-14 2005-12-21 Seiko Epson Corporation Light-emitting device, electronic apparatus, projection-type display device, line head, and image forming device

Also Published As

Publication number Publication date
US20110175121A1 (en) 2011-07-21
TW200947762A (en) 2009-11-16
JP5264935B2 (ja) 2013-08-14
DE102008006988A1 (de) 2009-08-06
EP2235759B1 (de) 2018-05-16
TWI399867B (zh) 2013-06-21
KR101573095B1 (ko) 2015-11-30
JP2011511446A (ja) 2011-04-07
KR101640360B1 (ko) 2016-07-15
KR20100109562A (ko) 2010-10-08
EP3327796B1 (de) 2023-03-29
EP2235759B9 (de) 2018-09-19
EP3327796A1 (de) 2018-05-30
CN101933171A (zh) 2010-12-29
WO2009094980A1 (de) 2009-08-06
KR20150136545A (ko) 2015-12-07
EP2235759A1 (de) 2010-10-06
US8686451B2 (en) 2014-04-01

Similar Documents

Publication Publication Date Title
US10862010B2 (en) Integrated colour LED micro-display
CN110224000B (zh) 图像显示元件
US12349515B2 (en) Multicolour light emitting structure
US20230120107A1 (en) Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component
US7982228B2 (en) Semiconductor color-tunable broadband light sources and full-color microdisplays
CN102576783A (zh) 像素化led
CN101933171B (zh) 光电子器件和用于制造光电子器件的方法
US11424392B2 (en) Light emitting diode apparatus and manufacturing method thereof
CN110504280A (zh) 显示阵列
JP2019536274A (ja) 半導体素子
US8835963B2 (en) Light converting and emitting device with minimal edge recombination
CN110504281A (zh) 显示阵列的制造方法
US11411145B2 (en) Light-emitting element package
TWI699598B (zh) 顯示陣列
CN118676282A (zh) 半导体结构及其制作方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant