TW200411946A - Optoelectronic transmitter - Google Patents

Abstract

An optoelectronics transmitter is disclosed, which comprises a semi-insulating substrate and side-illuminated traveling wave photodetector disposed on the substrate. The traveling wave photodetector comprises: an active layer disposed on the semi-insulating substrate, which is made by III-V material grown at room temperature and implanted with dopants, so as to absorb the photons in the light incident from the exterior, and to increase the electrical bandwidth; and an electrode structure formed on the active layer comprising three metal stripes to generate and transmit electromagnetic wave; and a planar antenna connected to the electrode structure of the photodetector to radiate the electromagnetic wave.

Description

200411946 V. Description of the invention (1) The technical field to which the invention belongs The present invention relates to a photonic transmitter (photonic T r * ans ni i 11 er), in particular to a side-illuminated photodetector and a printing device 7 A high-efficiency photoelectric transmitter composed of a circuit board-type wire has a planar structure, high photoelectric conversion efficiency, frequency tunability, and integrability. The previous technology has been accompanied by technological advances and the rapid increase in microwave applications. In the microwave range, magnetic waves often encounter interference problems in their applications. Therefore, the millimeter wave or sub-millimeter wave range of electromagnetic wave frequency = has gradually become commercial in recent years And military users: see it again, its advantage is not only that the application in its range is the second frequency band, but also that it uses a higher frequency, & can provide a higher level, and it can be used more Low power and smaller size clothes can increase the amount and speed of data transmission. (On the 'photoelectric transmitter-generally contains-a light detector shot # discarded.', Used to receive the lightning from the laser light source, you continue to the value of the day, two: the electromagnetic wave into the south frequency, this dagger The electromagnetic wave is transmitted by the antenna for various applications, such as Molecular Imaging, Shia 丨 /

Momtoring), space research and introduction ten g; A jade research or ranging. In the conventional optoelectronic emitters, the three or five semiconductor materials such as ytterbium are first detected by GaAs, which is vertical from the top; the efficiency of Xie will be subject to the vertical makeup of the RC time constant and the kiss. Expression, its bandwidth and lifetime of carriers and carrier merger time are affected by 200411946 V. Invention Description (2) " '~ "' In order to increase the bandwidth, it is customary to use low-temperature growth gallium arsenide (Low ^ Tempeirature GrOwn GaA0, referred to as LTG-GaAs) to shorten its carrier lifetime and carrier merger time. This technology can be found in US Patent No. 4 9 5 2 5 2 7. This method can increase the bandwidth, but its conversion efficiency is not ideal. In addition, this method must use e-Beam Lithography, which is quite complicated and expensive. To solve the above problems, it is known in U.S. Patent Nos. 64 1 8248 and 5 5 7 2 0 1 4 that the wooden structure using an edge-illumination type (edge-Coup 1 ed) photodetector is known as such. Wave light detector (Travave 1 ing Wave Photodetector 'TWPD' for short) or Waveguide Photodetector (WGPD), etc. In conventional technology, some LTG-GaAs type traveling wave light detectors, For example, those with a pi-η structure can provide a bandwidth of 520 GHz and have a quantum efficiency of 8%. However, when this TWPD is stretched to provide a higher saturated output current, its bandwidth will be lost due to microwave loss Severely reduced Furthermore, the use of LTG-GaAs materials in photodetectors requires the use of defects (Groups 5 and 5) grown at low temperatures to generate high-speed optical-electric conversion effects. These defects grow at three times the normal temperature. The fifth group is not enough to achieve the required high-speed optical-electric conversion effect. However, the low temperature growth also makes it impossible for this three or five group material layer to use single crystal growth and integrate with other semiconductor materials grown at normal temperature on the same plane. The main object of the present invention is therefore to provide a photoelectric transmitter which

200411946 The electric transmitter contains a traveling wave optical pick-up. The impurities of the three or five group of materials on the semi-insulating substrate can enhance the photon of the layer and include a trinity planar antenna for the efficiency of the electromagnetic wave radiation. The purpose is to provide an i-series one at room temperature. This phototransmitter has recrystallized and integrated. The name is to provide a flat five. Description of the invention (3) has a high bandwidth and high conversion. Another object of the present invention p-i- The η structure, of which the π group material layer, can be placed on the same plane without the need of the another mesh wave generating device of the present invention. Therefore, the side-illumination type of the light on the substrate of the present invention contains an active layer, which is set or grown at normal temperature and is implanted with the polar structure of light incident from the outside, formed in the active and transmitting electromagnetic waves, and the polar structures are connected together. The emitter has a structure in which three or five implanted impurities can be packaged with other semiconductors. Faceted millimeter or sub-millimeter semi-insulating substrate and side-illuminated light gamma sensor package, which is made by low temperature growth to absorb electrical broadband, and an electric metal strip to generate and detect the light The detector's electricity is emitted. Implementation mode The following diagram will be used in conjunction with the diagram, # 灿 1. ^ Explain in detail the photo-electric emitter of the present invention as a preferred embodiment. For details, please refer to the first picture '廿 丄 10', which contains an optical predicate; Transmitter antenna 1 6. With the light case 1 and a printed circuit board or plane source, the light (received from an external source (such as laser light electromagnetic waves with an arrow A /), and the light received by the antenna is converted into ,, 6 pass out. The light detector J 4 can be a 200411946.

A type of traveling wave light detector, such as those with a MSM (Metal-Semiconductor-Metal) architecture (as shown in the third figure), or a 0-Bu11 (13 + -1115 ± 1 ^ 1 ^ Bu11 +) architecture (See the fourth picture): 疋 /, Please cooperate with the second picture, which shows the light detector of the present invention. 4 The light detector 14 includes a light absorbing portion 15, and its side view is shown at the first. In the second diagram (MSM architecture) or the fourth diagram (p-i-n architecture). Seen from the second figure from the bottom to the top, the light absorbing portion 15 of the photodetector 14 includes a layer of semi-insulating substrate 14, which is composed of three or five group semiconductor materials, such as GaAs, GaSb Or InP. The substrate 140 is provided with an optical isolation sound 141 and a cladding layer 142, and an active layer of a group III or 5 material, such as LTG GaAs or other group III or semiconductor materials, is provided on the substrate 140, which may be Low temperature growers, such as LTG InGaAs, LTG GaAsSb, UG, hAs, LTG InGaAsN, or those grown at room temperature and implanted with impurities such as protons or positive ions, such as 0+, Ni +, as4 +, as +, n, ytterbium, F, Ar, p, b, Nl, Mn, co, Nd, etc. to shorten their carrier lifetime. Between the active layer 143 and the cladding layer 142, a diffusion preventing layer 144 made of AUsM P is provided. The isolation layer 141 and the cladding layer 142 are both made of AiGaAs material. The basic composition is A1xGal-xAs'. However, the two have different composition ratios. For example, the isolation layer 141 is composed of A1G JauAs and the cladding layer. 142 is composed of AlG.35GaG mAs. In this embodiment, the thickness of the isolation layer is 3 # πι, the main purpose of which is to isolate the substrate 14 from the active layer 143, and the thickness of the cladding layer 142 is 1, which is mainly used as an optical waveguide ( Optical Wavegui ding). The function of the active layer 143 is

200411946

Absorbs photons incident from an external light source for conversion into electromagnetic waves of millimeters or sub-millimeters. The thickness of the A1 As layer 144 is about 001, and its purpose is to prevent Shi Shen 'atoms from diffusing outward during the annealing process. A coplanar waveguide (c0-pianap) is provided on the top surface of the active layer 143.

Waveguide (referred to as CpW) is used for waveguide-induced light-excited microwave Γ (Photo-Excited Micr © wave Guiding Mode). It includes an electrode structure, which is composed of three metal strips, including a central strip 1 4 5 and two side strips. 146, in which the side bars 丨 46 are used as ground wires and are separated from the center bar 1 4 5. Here, with the msm structure of metal strips 4 5,} 4 6 and active layer 4 3, incident light waves can be converted into electromagnetic waves. This coplanar waveguide is made using a suitable semiconductor process, such as a self-aligned process, which can form an undercut on the active layer 143 below the center bar 145 during the process. , And the side bars 146 and 145 are separated, the gap between them can be reduced to 2 0-3 0 0 nm, without using the electron beam engraving technology applied in the conventional light detector, but it is understandable It can also use electron beam engraving technology to make the same or similar structure. The two small gaps between the metal bars can eliminate parasitic capacitance and resistance, reduce the carrier lifetime, enhance the electric field strength, and increase the internal quantum efficiency. In addition, the 'smaller gap' in UHF applications can also reduce the loss of microwave radiation. The active layer 143 and the cladding layer 142 in the photodetector 14 of the present invention are composed of GaAs and AlGaAs, respectively, and they can be made by using a semiconductor process, and the microwave conduction mode caused by the two is, Quasi_TEM Mode "is different from the" Slow Wave Mode "in the conventional TWPD, so

200411946 V. Description of the invention (6) The technology used in I will have the characteristics of low loss and high speed, so when the microwave length μ of the shore length is set, it can be restless and has a lower bandwidth. In a preferred embodiment of the present invention, it has a bandwidth of 5 70 GHz within the range of 800nm, and also has a response of 0.8 to FWHM. Refer to the second figure again, except for the light absorbing part 15 shown in the third figure. The light detection is 14 and the wires 151, 152, and 53 which include a coplanar waveguide are respectively connected to the light absorbing part. The metal bars 146 and 145 in the coplanar waveguide in 5 are connected to each other to transmit millimeter and sub-millimeter electromagnetic waves. Rebirth-® ′ In the present invention, the printed circuit board antenna or planar antenna 16 is a CPW feed slot antenna (cpw Fed si〇t

Antenna), which is connected to the photodetector μ through an impedance matching section 18, and the impedance is matched.卩 18 can provide impedance matching between antenna 6 and photodetector 4, which is important for the transmission of power to antenna 16 and the optical debt tester "at 14 frequencies of frequency tit. Both are important. Antenna 1 6 It also contains a radio frequency isolation bias terminal, which is used to block high-frequency AC signals (resonant with the antenna) from entering, to bias, DC probe terminal 17. It can be understood here that this impedance matching section 18 It is also a flat structure, and is integrated with the photodetector 14 and the antenna 16 by a semiconductor process. In the p-in architecture shown in the fourth figure, it is semi-insulated. Layer 241,] [layer 242, and rhenium layer 243 are sequentially grown at normal temperature on the substrate 140. The P layer and the η layer are respectively composed of p-type and _A1GaAs materials, and ^ 242 is GaAs material. The layer and the η layer may also be other materials of the three or five groups, such as InAlAs, InP, InGaAsP, etc., and the material of the i layer is other than GaAs.

Page 9 200411946 V. Description of the invention (7):-It can also be InGaAs, and defects are formed in the i-layer 242 and by means of impurity implantation so as to form p-layers 241 and 11-layer 243 above and below it Together, they effectively convert incident light into high-frequency electromagnetic waves. Metal strips 146, 145 are also provided on 1) layer 241 and 1! Layer 243 to transmit electromagnetic waves out. It should be emphasized that the p-i-η structure can be integrated with semiconductor devices other than the photodetector U on the same plane by growing into a material at room temperature. together. The fifth figure does not show the relative change of the power transmitted by the photoelectric transmitter of the present invention at four different operating frequencies. It can be seen that the photoelectric transmitter of the present invention at 1.6 THz Can have maximum power output. As mentioned above, by growing the various parts in the photodetector 14 at room temperature, and using a CPW feed slot antenna as the structure of the antenna 16, another feature of the present invention is that it can use the antenna 1 6 and photodetector 丨 4 are integrated into a single element by a single crystal and are connected to each other. '' In addition, the substrate 1 40 of the light absorbing part 15 in the light detector 14 of the present invention may be replaced by a low dielectric constant substrate, and the material of the low dielectric constant substrate may be glass, quartz, or plastic. It can pass through millimeter or sub-millimeter waves without causing strong interference, so it can further enhance the ability of electromagnetic waves to be transmitted to the air. Furthermore, as shown in the sixth figure, the present invention can also provide an integrated structure, which integrates the antenna 16 and the photodetector 14 into a single component, wherein the sky and the sky 16 are directly formed on a layer with a low dielectric constant. The substrate 12 is arranged on a semi-insulating substrate 14 of the photodetector 14 and formed into a single unit.

200411946 V. Description of the invention (8) Integral device. Through the technology of semiconductor manufacturing, the light detector 14 and the antenna 16 of the present invention can be formed into a single integrated circuit type. The arrow A represents the incident light or light source. 'A photodetector 14 made of a group of three or five materials grown at room temperature and implanted with impurities in a straight line. The photodetector 14 and other semiconductor devices can be integrated into a structure. As shown in FIG. 7 and FIG. 7, another embodiment of the present invention is shown, in which a photodiode 10 and a semiconductor optical amplifier (Sem: [c〇nduct) of the present invention are provided on a low dielectric constant substrate 12. : 〇r Qpticai Amplifier (referred to as SOA) 2〇, which is also made by using semiconductor technology, so it is also an integrated component. The function of the optical amplifier 20 is to provide a proper signal to the phototransmitter. With the "amplifier 20" arrangement, the photoelectric transmitter of the present invention can be applied in the case of higher sensitivity * f. The eighth figure shows another use of the phototransmitter of the present invention, in which a layer of passive light wave ^ (Passive 〇ptlCal Wavegulde) 30 is provided on the low dielectric constant substrate 12 and the passive light The V guide layer 30 is provided with a plurality of pairs of the optical amplifier 20 and the phototransmitter wave line A, which can be transmitted to each optical amplifier through the passive optical waveguide layer 30, and the emitted light is sent to the phototransmitter 10. The ninth figure shows another painful use of the photoelectric emitter 10 of the present invention, in which the low dielectric constant base 2 is provided with multiple photoelectric emitters ^ and an evening mode interference beam splitter (0ptical Multi_MQde,

Interference PoWer Splitter) 40, 苴 amplifier 20, corresponding to each of the photocells, and there is a light port, and the radio frequency is 1 〇. The incident light A enters

Page 11 200411946 V. Description of the invention (9) = device 40 :, and transmits it to each optical amplifier 20, and then transmits it to each photoelectric emitter 20]. The tenth figure shows still another application of the present invention, in which a distributed Bragg Grating 50, or an intra-cavity reflector (intra_cavity) is recognized on the low dielectric constant substrate 12

PefleCtor). In this example, when the amplifier 20, which provides a gain function, can provide sufficient gain, the entire structure starts to laserize.

Lasmg), and the decentralized Bragg grating or internal cavity reflector 50 can select two modes during continuous laserization (CW Lasing) to make them hit each other Beatlng) or increase the weight of laser mode locking. Covering the frequency to τΗζ ϋ * With the help of the electric generator 2 〇 and the phaser _ 0 formed by the re-grown semiconductor layer, the aforementioned high-frequency optical signal can be converted into an electric signal, and f It is characterized by ft megahertz signals without additional optical signals. Here, the decentralized Bragg grating or internal cavity reflection benefit is composed of a semiconductor grating, so 10 is collectively integrated to form a single fw. πsample M „^ mmias 1 $ device. Similarly, the phase controller 6 o is = layer structure 'can also be integrated with the photoelectric transmitter 10 in the same-flat area. τ ^ soil, can be used by artists Understand that 'Although, the above description is only relevant, the present invention = a wide range of evils and e', but there can be many changes and improvements without departing from the present invention, and all such changes and = deer = for the application below The scope of the patent scope to be protected. = ~? 200411946 Schematic illustration of the first diagram is a plan view of the photoelectric transmitter of the present invention. The second diagram is a plan view of the photodetector in the photoelectric transmitter of the present invention. Third The figure is a side view of a photo-detector in the photoelectric transmitter of the present invention. The fourth figure is a side view of another photo-detector used in the photoelectric transmitter of the present invention. The fifth figure is a photoelectric detector of the present invention. -A diagram of the relative change in the power transmitted by the transmitter at different frequencies. The sixth diagram is a schematic perspective view of the integration of another type of photoelectric transmitter of the present invention. The seventh diagram is a photoelectric application of the photoelectric transmitter of the present invention The first embodiment of the system. The figure is a second embodiment of a photovoltaic system to which the photoelectric transmitter of the present invention is applied. The ninth figure is a third embodiment of the photoelectric system to which the photoelectric transmitter of the present invention is applied. The tenth figure is a photovoltaic system to which the photoelectric transmitter of the present invention is applied. Fourth Embodiment 0 Element No. 10 Photoelectric Transmitter 12 Low Dielectric Constant Substrate 14 Light Detector 15 Light Absorber 16 Planar Antenna

Page 13 200411946 Brief description of the drawings 17 DC probe 18 Impedance matching 19 RF isolation bias 20 Optical amplifier 30 Passive optical waveguide

40 Multi-mode interference beam splitting IT 50 Bragg grating 6 0 Phase controller 1 4 0 Semi-insulating substrate 1 4 1 Optical isolation layer 142 Cladding layer 1 4 3 Active layer 1 4 4 Anti-diffusion layer 1 4 5 Center bar 146 Side 151 wires 1 5 2 wires 1 5 3 wires

Page 14

Claims (1)

200411946 VI. Application for patent scope 1. A photoelectric transmitter, comprising: a substrate; a side-illuminated traveling wave light detector, comprising an active layer, disposed on the substrate, which is made of materials of group two or five To absorb photons in the light incident from the outside, and to increase the electrical bandwidth, and an electrode structure is formed on the active layer and contains three metal strips for generating and transmitting electromagnetic waves; a planar antenna, The electrode structures of the photodetector are connected together to radiate the electromagnetic wave. 2 · The photoelectric transmitter according to item 1 of the scope of patent application, wherein the planarized antenna is integrated with the photodetector in a monocrystalline integrated manner. 3. The optoelectronic transmitter according to item 1 of the scope of patent application, wherein the substrate is a semi-insulating substrate made of a group of two or five semiconductor materials. 4 · t Ϊ 之 The optoelectronic emitter described in item 3 of the patent scope, in which the three-five 2 "'version material is selected from the group containing GaAs, GaSb and ία 〇 * 5 The photo-electric emitter described in item 1 of the article, InGaAs, which has a low temperature and long activity, wherein the semiconductor material of the implanted garment / sexual layer is made from "Α_, ΙηΑ3, Ιη_Ν, to shorten its load. Child life.中 出 出 者 6. The photoelectric transmitter described in Item 1 of the 范围 Li scope, the layer is implanted with zest 7 such as φ ancient main straight, shell, to shorten its carrier lifetime • ^, 1 Has covered the photoelectric transmitter described in item 6, Page 15 200411946 6 10 11 12 13 14 15 中 The impurities in the scope of the patent claim are selected from the group consisting of right An.Ni, Mn, Nl +, As4 +, As such as item j in the scope of patent application. It is a substrate made of a low dielectric constant material and an A-electro-transmitter such as an application of a tritium. It is made of glass, quartz, plastic polymer or carbon in the group including silicon silicon. It includes the photoelectric transmitter described in the first one, wherein the antenna 3 has a total + planar waveguide feeding slot type. Antenna. ': Photoelectric transmitter described in item i of the scope of patent application, 4 step-by-step resistance segment matching section, placed between the photodetector and the antenna. The side-illumination = wave detection state contains the MSM structure, and the electrode structure is made of a self-aligning process to form a part of the MSM structure. • The optoelectronic transmitter described in item 1 of the scope of patent application Among them, the side-illuminated traveling wave detector includes an MSM structure, and the electrode structure is made of electron beam engraving technology to form a part of the MSM structure. • Optoelectronics as described in item 1 of the scope of patent applications A transmitter in which the electrode structure includes a tri-metal strip, at least one of which is grounded, and the gap therebetween is 200-300 nm. • The photoelectric transmitter described in item 12 of the patent application scope further includes a light Isolation layer on the substrate Between the active layer, the spacer layer spaced from the substrate and the active layer. The application of the first photo emitter 15 patent range, further wherein the packet N wherein the low dielectric substrate 200411946 VI. Scope of patent application Contains a cladding layer between the isolation layer and the active layer, which is used as an optical waveguide. 1 7 · As described in Item 12 of the scope of the patent application, the optoelectronic emitter further includes a layer to prevent the diffusion of Kun Yuan 孑 'located between the substrate and the active active layer ^ 1 8 · 如The photo-emitter delamination described in item y7 of the scope of patent application is made of AlxGal_xAs. Wherein the package is used for this purpose) Where the side view is where the P-layer is formed in the where the p-layer is 19 The photo-emitter coating as described in the patent application No. 16 coating layer is made of AlxGal_xAs. {· 20 · The photoelectric emitter as described in item 17 of the patent application to prevent the diffusion of arsenic atoms is made of A1 A s 21 · The photoelectric emitter as described in item 1 of the patent application The active layer of the traveling wave detector includes a P i η structure 2 2 · The photo-emitter i- η structure described in item 21 of the patent application scope includes a ρ layer formed on a substrate ′ -ρ layer And a layer of n are formed on the layer i. 2 3 · The photoelectric emitters π, ^ as described in item 22 of the scope of patent application are made of those selected from p-type materials including AlGaAs, InAlAs, InP, inGaAsP. 24. The optoelectronic emitter according to item 22 of the scope of patent application, wherein the η layer is made of a material selected from η-type materials including AlGaAs, InAlAs ′ InP, and inGaAsP. 2 5 · The optoelectronic emitter described in item 22 of the patent application scope, wherein the i-layer is selected from the group consisting of GaAs and InGaAs Page 17 200411946 6. Scope of patent application Made by Wen Changcheng materials, among which inflammation is implanted with impurities. 2 6 · The optoelectronic emitter according to item 25 of the scope of the patent application, wherein the implanted impurities are selected from the group consisting of 0+, Ni +, As4 +, As +, N, Hf, F, Ar, P, β, , Mn, co, and Nd. 2 7 · — An optoelectronic system including: a low-dielectric-constant substrate: a photoelectric transmitter disposed on the low-dielectric-constant substrate, which includes: a side-illuminated traveling-wave light detector including an activity The layer is made of three or five materials and an electrode structure is formed on the active layer and contains three metal strips for generating and transmitting electromagnetic waves. A planar antenna is connected to the electrodes of the photodetector. The structures are connected together to radiate the electromagnetic wave; and an optical amplifier is used to absorb the optical signal incident from the outside, amplify it and transmit it to the photoelectric transmitter. 28. The photovoltaic system according to item 27 of the scope of patent application, wherein the planarized antenna is integrated with the photodetector in a single crystal integrated manner. The photovoltaic system according to item 27 of the 29.2 patent application range, wherein the semiconductor material used to form the active layer is selected from the group consisting of GaAs, InGaAs, GaAsSb, InAs, and InGaAsN. It grows at low temperature to shorten its carrier lifetime. 3 〇 The photovoltaic system as described in claim 27 of the patent scope, wherein the activity Page 18 200411946 6. Scope of patent application The layer is implanted with impurities to shorten its carrier lifetime. 3 1. The photovoltaic system according to item 30 of the scope of patent application, wherein the implanted impurities are selected from the group consisting of 0+, Ni +, As4 +, As +, N, H, F, Ar, P, B, Ni, Mn, Co, and Nd groups. 3 2. The photovoltaic system according to item 27 of the scope of patent application, wherein the low dielectric constant substrate is made of a member selected from the group consisting of glass, quartz, plastic polymer or silicon carbide of. 3 3. The photovoltaic system according to item 27 of the scope of patent application, wherein the antenna includes a coplanar waveguide feed-in slot antenna. 3 4. The optoelectronic system according to item 27 of the scope of patent application, further comprising a resistance matching section provided between the photodetector and the antenna. 3 5. The photovoltaic system according to item 27 of the scope of patent application, wherein the side-illuminated traveling wave detector includes an MSM structure, and the electrode structure is made by a self-aligned process to form the MSM structure. a part. 3 6. The photovoltaic system according to item 27 of the scope of the patent application, wherein the side-illuminated traveling wave detector includes an MSM structure, and the electrode structure is made by an electron beam engraving technology to form the MS Μ structure Part of it. 37. The photovoltaic system according to item 27 of the scope of patent application, wherein the electrode structure includes a tri-metal strip, at least one of which is grounded, and a gap therebetween is 2 0-3 0 0 nm. 38. The photovoltaic system according to item 35 of the scope of patent application, further comprising an optical isolation layer and a cladding layer, which are located between the isolation layer and the active layer, and are used as optical waveguides. 3 9. The photovoltaic system described in item 35 of the scope of patent application, further comprising Page 19 200411946 6. Scope of patent application There is a layer to prevent the diffusion of arsenic atoms. 40. The photovoltaic system according to item 38 of the scope of patent application, wherein the isolation layer is made of AlxGal_xAs. 4 1 The photovoltaic system according to item 38 of the scope of patent application, wherein the cladding layer is made of AlxGa: LxAs. 42. The photovoltaic system according to item 33 of the scope of patent application, wherein the layer for preventing the diffusion of arsenic atoms is made of A 1 As. 4 3 · The photovoltaic system according to item 27 of the scope of patent application, wherein the active layer of the side-illumination traveling wave detector includes a P-bu n structure. Call 44. The photovoltaic system according to item 43 of the scope of patent application, wherein the R-1 P-n structure includes a p layer, an i layer formed on the p layer, and a n layer formed on the i layer . ^ 4 5 · The photovoltaic system according to item 44 of the scope of patent application, wherein the P layer is made of a p-type material selected from the group consisting of AlGaAs, InAlAs, InP, and InGaAsP. 46. The photovoltaic system according to item 44 of the scope of patent application, wherein the n-layer system is made of a material selected from among ^ type materials including AlGaAs, InAlAs' InP, and InGaAsP. 4? The optoelectronic device according to item 44 of the scope of patent application, wherein the i-layer is made of a normal-temperature growing material including GaAs and InGaAs, and is compounded and implanted with impurities. ', 4 8 · The photovoltaic system according to item 47 of the scope of the patent application, wherein the plant impurity is selected from the group consisting of 0+, Ni +, As4 +, As +, N, H, F, Ar, P, B, Mi, Mη, CD, Nd groups. . 200411946 6. Patent application scope 4 9 · The photovoltaic system described in item 27 of the patent application scope further includes a passive optical waveguide layer provided on the low dielectric constant substrate, and the photodetector and the light Below the amplifier, it is used to transmit the incident light to the optical amplifier. 50. The optoelectronic system according to item 49 of the scope of the patent application, further comprising another optical detector and another optical amplifier, which are disposed on the passive optical waveguide layer. The optical amplifier may be a passive optical waveguide layer. Receives incident light. 5 1 · The photovoltaic system described in item 27 of the scope of patent application, further comprising a multi-mode interference beam splitter provided on the low dielectric constant substrate for transmitting incident light to the optical amplifier. 5 2 · The optoelectronic system described in item 51 of the scope of patent application, further comprising another photodetector and another optical amplifier, which are arranged on the low dielectric constant substrate, wherein the optical amplifier can be The mode interference beam splitter receives incident light. 53. The photovoltaic system according to item 27 of the scope of patent application, further comprising a Bragg grating provided on the low-dielectric-constant substrate and positioned before the optical amplifier. 54. The photovoltaic system according to item 53 of the patent application, wherein the Bragg grating includes a semiconductor grating. 5 5. The photovoltaic system according to item 53 of the scope of patent application, further comprising a phase controller disposed on the low-dielectric-constant substrate and located between the photodetector and the optical amplifier. 6. The photovoltaic system according to Item 55 of the declared patent scope, wherein the phase control lineage is composed of a regrown semiconductor layer. 200411946 6. Scope of patent application 5 7. The photovoltaic system according to item 27 of the scope of patent application, further comprising an internal cavity reflector, which is arranged on the low dielectric constant substrate and is located before the optical amplifier. 5 8. The photovoltaic system according to item 57 of the scope of patent application, wherein the cavity reflector includes a semiconductor grating. 5 9. The photovoltaic system according to items 5-7 of the scope of patent application, further comprising a phase controller disposed on the low-dielectric-constant substrate and located between the photodetector and the optical amplifier. 60. The photovoltaic system according to item 59 of the scope of the patent application, wherein the phase controller is composed of a regrown semiconductor layer. Page 22