CN116759466A - High-power improved single-carrier photoelectric detector based on flip-chip bonding - Google Patents
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Abstract
The invention discloses a high-power improved single-carrier photoelectric detector based on flip-chip bonding, which comprises the following specific steps: growing an epitaxial layer structure of InP and InGaAs wafers on a semi-insulating InP substrate through metal organic chemical vapor deposition, wherein the epitaxial layer structure sequentially comprises an n contact layer, a drift layer, a cliff layer, an absorption layer and a p contact layer; the n contact layer is InP doped with heavy n type, and the p contact layer is InGaAs doped with heavy p type; the absorption layer is a depletion absorption layer with the thickness of 40nm and a non-depletion absorption layer with the thickness of 120nm, the cliff layer is 30nm thick, and the drift layer is 250nm thick; a 50nm thick p-type doped charge sacrificial layer was added below the drift layer. The ultra-wideband UTC-PD is realized, and the heat radiation performance of the device is improved by using the flip-chip bonding technology, so that the high saturated output power is realized.
Description
Technical Field
The invention belongs to the field of photoelectric detection, and particularly relates to a high-power improved single-carrier photoelectric detector based on flip-chip bonding.
Background
Microwave photonics has received great attention for numerous applications including analog optical links, terahertz communications, optical generation of microwave signals, and the like. In these systems, the conversion of light into electricity is achieved by Photodiodes (PDs), the performance of which largely determines the operating frequency and performance of the system. For example, in an analog photon link, high speed, high power PD is a necessary condition to achieve high link gain, low noise figure, and large spurious free dynamic range. Conventional photodetectors are of the PIN type, in which photogenerated electrons and holes are transported as double carriers. But the PIN-PD is limited in bandwidth due to the low mobility of holes and the space charge effect is enhanced due to the low mobility exacerbating carrier accumulation, so that the rf output power is also limited. Compared with PIN-PD, single carrier photodetectors (uni-traveling carrier PD, UTC-PD) have a larger bandwidth and higher output power due to the rapid relaxation of holes in the absorption region, with only electrons with high mobility as active carriers.
In UTC-PD structures, electrons accumulate at the heterojunction interface between the absorption region (typically InGaAs) and the depletion region (typically InP) due to the discontinuity of the energy bands of the absorption region and the depletion region, thereby limiting the output power and linearity of the device. This problem can be alleviated by depletion doping a portion of the absorber layer to provide a strong electric field at the heterojunction interface, thus alleviating electron packing and improving the responsiveness of the PD, i.e., modified-UTC-PD (MUTC-PD), without sacrificing bandwidth. At high currents, field collapse of the depletion absorption layer is caused, and the reduced electric field in turn affects electron transit, deteriorating the saturation performance of the device. The electric field at the heterojunction interface can be further enhanced by introducing a cliff layer to achieve higher saturation currents. In addition, the electric field in the absorption layer is distorted when current flows, and the drift layer may be lightly n-doped as a space charge compensation layer. In this layer, the electric field is pre-distorted, so that a flat electric field is obtained at high currents. In addition to space charge effects, the heat dissipation capability of the device is also an important factor in limiting saturated output power. Among the various heat dissipation techniques, flip-chip bonding techniques achieve optimal results.
As the frequency band of microwave photonics systems moves to higher frequencies, the need for higher speed photodiodes increases. By reducing the thickness of the depletion region, the bandwidth of the PD can be increased. However, in high-speed PD, even at low bias voltages, there is a relatively high electric field in the depletion region, causing electrons to reach saturation velocity, without achieving velocity overshoot, reducing device bandwidth. Therefore, the photodetector realizing the high saturation output with large bandwidth needs to reasonably design the layer structure of the device and realize good heat dissipation.
Disclosure of Invention
The invention aims at the problems and provides a high-power improved single-carrier photoelectric detector based on flip-chip bonding.
According to the high-power improved single-carrier photoelectric detector based on flip chip bonding, an epitaxial layer structure of InP and InGaAs wafers is grown on a semi-insulating InP substrate through metal-organic chemical vapor deposition (metal-organic chemical vapor deposition, MOCVD), and the epitaxial layer structure sequentially comprises an n contact layer, a sacrificial layer, a drift layer, a cliff layer, an absorption layer and a p contact layer.
The n contact layer is 5×10 18 cm -3 Is 2 x 10 p-contact layer of heavily n-doped InP 19 cm -3 The high doping concentration can form good ohmic contact with metal, and the resistance of the device is reduced.
The absorption layer is a depletion absorption layer with a thickness of 40nm and a non-depletion absorption layer with a thickness of 120nm, and the non-depletion absorption layer is 5×10 17 cm -3 -2×10 18 cm -3 The non-depleted absorber layer generates a built-in electric field that promotes drift motion of the photogenerated electrons.
An InGaAsP quaternary compound layer is added at the InP and InGaAs interface to smooth the energy band.
The depletion absorption layer with the thickness of 40nm and the cliff layer after 30nm are utilized to help the photo-generated carriers to pass through the heterojunction interface, so that the space charge effect is reduced. In addition, n doping is carried out on the 250nm drift layer to pre-change electric field distribution, so that large high saturation output is realized.
To solve the problem of electron velocity saturation of the high-speed photodetector collecting layer, a layer of 7×10 with thickness of 50nm is added under the drift layer 17 cm -3 The p-type doped charge sacrificial layer is used for adjusting an electric field in the drift region, so that photo-generated electrons are transported at an overshoot speed, and a large bandwidth of the device is realized.
The invention designs and flows the slice to manufacture the devices with the diameters of 4 mu m,6 mu m,8 mu m and 10 mu m, and the corresponding bandwidths respectively reach 150GHz, 129GHz, 117GHz and 105GHz. In addition, rf output powers of 12.7dBm, 11.3dBm, 8.5dBm, -3dBm, and-5.7 dBm were achieved at 90, 100, 110, 150, and 165GHz, respectively.
The invention relates to a manufacturing method of a high-power improved single-carrier photoelectric detector based on flip-chip bonding, which specifically comprises the following steps:
firstly, etching an n contact layer by using a dry etching process to form a p mesa shape, then etching an InP substrate layer by using the same dry etching process to form an n mesa, and obtaining the basic structure of the improved single carrier photoelectric detector UTC-PD through a two-step etching process; depositing titanium/platinum/gold/titanium and gold germanium/nickel/gold as n and p metal layers over the n contact layer and the p contact layer, respectively; thinning the InP substrate with the back surface of 350 mu m to 130 mu m and polishing; depositing a 255nm silicon dioxide layer on the back of the substrate as an anti-reflection layer, and cutting the manufactured wafer into chips with the thickness of 1mm multiplied by 1.3 mm; by FineTechAnd (3) performing flip-chip bonding on the PD chip and the radiating substrate by using the pico system to improve the saturated output of the device, and finally obtaining the improved single-carrier photoelectric detector MUTC-PD.
The beneficial technical effects of the invention are as follows:
the invention controls electric field distribution in a drift layer of UTC-PD by inserting a p-type doped charge sacrificial layer in the drift layerTo make the electron reach overshoot speed (-4 x 10) 7 cm/s), ultra wideband UTC-PD is achieved. The invention improves the heat dissipation performance of the device by using the flip-chip bonding technology to realize high saturated output power.
Drawings
Fig. 1 is an epitaxial layer structure of the MUTC-PD of the present invention.
Fig. 2 is an epitaxial layer band diagram of a MUTC-PD of the present invention.
FIG. 3 is an optical microscope image of MUTC-PD according to the present invention.
FIG. 4 is a scanning electron microscope image of MUTC-PD according to the present invention.
Fig. 5 is a dark current for an 8 μm diameter device on a diamond substrate.
Fig. 6 is a diagram of a device rf performance test structure in accordance with the present invention.
FIG. 7 is a graph of frequency response of devices with diameters of 4 μm,6 μm,8 μm, and 10 μm on a diamond substrate ((a) 4 μm, (b) 6 μm, (c) 8 μm, and (d) 10 μm).
Fig. 8 is a summary of saturated output power for different devices.
Detailed Description
The invention will be described in further detail with reference to the accompanying drawings and the detailed description.
According to the high-power improved single-carrier photoelectric detector based on flip chip bonding, an epitaxial layer structure of InP and InGaAs wafers is grown on a semi-insulating InP substrate through metal-organic chemical vapor deposition (metal-organic chemical vapor deposition, MOCVD), and the epitaxial layer structure is shown in a figure 1 and is an n-contact layer, a sacrificial layer, a drift layer, a cliff layer, an absorption layer and a p-contact layer in sequence. The epitaxial layer band diagram is shown in fig. 2.
At both ends of the epitaxial layer, the n-contact layer is 5×10 18 cm -3 Is 2 x 10 p-contact layer of heavily n-doped InP 19 cm -3 The high doping concentration can form good ohmic contact with metal, and the resistance of the device is reduced.
The absorption layer is a depletion absorption layer with a thickness of 40nm and a non-depletion absorption layer with a thickness of 120nm, and the non-depletion absorption layer is 5×10 17 cm -3 -2×10 18 cm -3 The non-depleted absorber layer generates a built-in electric field that promotes drift motion of the photogenerated electrons.
The depletion absorption layer with the thickness of 40nm and the cliff layer after 30nm are utilized to help the photo-generated carriers to pass through the heterojunction interface, so that the space charge effect is reduced. In addition, n doping is carried out on the 250nm drift layer to pre-change electric field distribution, so that large high saturation output is realized.
To solve the problem of electron velocity saturation of the high-speed photodetector collecting layer, a layer of 7×10 with thickness of 50nm is added under the drift layer 17 cm -3 The p-type doped charge sacrificial layer is used for adjusting an electric field in the drift region, so that photo-generated electrons are transported at an overshoot speed, and a large bandwidth of the device is realized.
The invention designs and flows the slice to manufacture the devices with the diameters of 4 mu m,6 mu m,8 mu m and 10 mu m, and the corresponding bandwidths respectively reach 150GHz, 129GHz, 117GHz and 105GHz. In addition, rf output powers of 12.7dBm, 11.3dBm, 8.5dBm, -3dBm, and-5.7 dBm were achieved at 90, 100, 110, 150, and 165GHz, respectively.
The invention relates to a manufacturing method of a high-power improved single-carrier photoelectric detector based on flip-chip bonding, which specifically comprises the following steps:
the n contact layer is etched by dry etching process to form p mesa shape, which defines the size and position of the active region. And then etching the InP substrate layer by using the same dry etching process to form an n-table-board, and obtaining the basic structure of the improved single-carrier photoelectric detector UTC-PD through a two-step etching process. Titanium/platinum/gold/titanium and gold germanium/nickel/gold are deposited as n and p metal layers over the n contact layer and the p contact layer, respectively. After the active region is completed, the back surface of the InP substrate of 350 μm is thinned to 130 μm and polished. And depositing a 255nm silicon dioxide layer on the back of the substrate to serve as an anti-reflection layer. The fabricated wafer was then diced into 1mm by 1.3mm chips. To improve heat dissipation of devices, fineTech is utilizedThe pico system performs flip-chip on the PD chip and the heat dissipation substrateThe bonding promotes the saturated output of the device. Diamond, aluminum nitride and silicon are used as heat dissipation substrates, respectively, with well-designed coplanar waveguide electrodes thereon to adjust the capacitance and inductance of the PD. Finally, the optical microscope diagram of the MUTC-PD of the improved single-carrier photoelectric detector is shown in fig. 3, and the scanning electron microscope diagram is shown in fig. 4.
And (3) testing:
firstly, performing direct current test on the obtained device. Dark current is an important performance indicator as a main source of noise. The dark current of a device with a diameter of 8 μm at a bias of-3V is about 200nA, as shown in fig. 5. Second, by testing the output current of the device at a given optical power, the optical responsivity of MUTC-PD at 1.55 μm wavelength was found to be 0.17A/W. The S parameter of the device is measured by a vector network analyzer with the bandwidth of DC-67 GHz. By establishing an equivalent circuit model and fitting the S parameter, the parameters of the device can be extracted, so that RC limited bandwidth and carrier transit time limited bandwidth are obtained, and each parameter chart 1 of PD on the diamond substrate is shown.
Table 1 parameters of device extraction on diamond substrate
| Device parameters | 4μm | 6μm | 8μm | 10μm |
| Junction capacitance | 16 fF | 21 fF | 25.5fF | 33fF |
| Junction resistance | 16Ω | 11Ω | 10Ω | 9Ω |
| Coplanar waveguide capacitor | 12.6fF | 12.6fF | 12.6fF | 12.6fF |
| Coplanar waveguide inductor | 150pH | 150pH | 150pH | 150pH |
The ideal capacitance of the device can be calculated from equation (1), with ideal capacitances for 4 μm,6 μm,8 μm and 10 μm devices being 3.4fF,7.7fF,13.7fF,and 21.4fF, respectively. The parasitic capacitance of our device was found to be approximately 12.5fF by comparison with the extracted device parameters.
Subsequently, we tested the radio frequency response including device bandwidth, saturated output power using the architecture of fig. 6. Continuous light generated by the two lasers passes through a 3-dB coupler to generate beat frequency signals with 100% modulation depth, and the polarization states of the two paths of light are respectively regulated and controlled by the two polarization controllers. The frequency of the beat frequency signal is controlled by changing the output wavelength of one laser of the device, and the power of the signal is controlled by the erbium-doped fiber amplifier and the adjustable optical attenuator. Finally, the signal light is incident into the device for detection through a lens optical fiber with the light spot diameter of 4 mu m.
Bandwidth testing was performed under bias of-3V and photocurrent of 6mA, and the bandwidth of the devices on the diamond substrate obtained from the testing is shown in fig. 7. Devices with diameters of 4 μm,6 μm,8 μm and 10 μm give bandwidths of 150GHz, 129GHz, 117GHz and 105GHz, respectively.
Finally, we tested the saturated output performance of the device, and figure 8 shows the saturated rf output power of devices of different sizes for different heat dissipating substrates.
In summary, the present invention provides a high saturation output photodetector with a bandwidth up to 150GHz using flip-chip bonding techniques.
Claims (3)
1. The high-power improved single-carrier photoelectric detector based on flip-chip bonding is characterized in that an epitaxial layer structure is grown on a semi-insulating InP substrate through metal organic chemical vapor deposition, and the epitaxial layer structure sequentially comprises an n contact layer, a sacrificial layer, a drift layer, a cliff layer, an absorption layer and a p contact layer;
the n contact layer is 5×10 18 cm -3 Is 2 x 10 p-contact layer of heavily n-doped InP 19 cm -3 Heavy p-doped InGaAs;
the absorption layer is a depletion absorption layer with a thickness of 40nm and a non-depletion absorption layer with a thickness of 120nm, and the non-depletion absorption layer is 5×10 17 cm -3 -2×10 18 cm -3 Is a graded doped absorber layer;
the cliff layer is 30nm thick, and the drift layer is 250nm thick;
a layer of 7×10 with a thickness of 50nm is added below the drift layer 17 cm -3 Is a p-type doped charge sacrificial layer.
2. The flip-chip bonding-based high-power improved single-carrier photodetector according to claim 1, wherein the photodetector is fabricated with diameters of 4 μm,6 μm,8 μm and 10 μm, and corresponding bandwidths of 150GHz, 129GHz, 117GHz and 105GHz, respectively.
3. The manufacturing method of the high-power improved single-carrier photoelectric detector based on flip-chip bonding as claimed in claim 1, which is characterized by comprising the following steps:
firstly, etching an n contact layer by using a dry etching process to form a p mesa shape, then etching an InP substrate layer by using the same dry etching process to form an n mesa, and obtaining the basic structure of the improved single carrier photoelectric detector UTC-PD through a two-step etching process; depositing titanium/platinum/gold/titanium and gold germanium/nickel/gold as n and p metal layers over the n contact layer and the p contact layer, respectively; thinning the InP substrate with the back surface of 350 mu m to 130 mu m and polishing; depositing a 255nm silicon dioxide layer on the back of the substrate as an anti-reflection layer, and cutting the manufactured wafer into chips with the thickness of 1mm multiplied by 1.3 mm; by FineTechAnd (3) performing flip-chip bonding on the PD chip and the radiating substrate by using the pico system to improve the saturated output of the device, and finally obtaining the improved single-carrier photoelectric detector MUTC-PD.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117913160A (en) * | 2024-03-20 | 2024-04-19 | 度亘核芯光电技术(苏州)有限公司 | Double cliff layer regulation and control high-speed single-row carrier photoelectric detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117913160A (en) * | 2024-03-20 | 2024-04-19 | 度亘核芯光电技术(苏州)有限公司 | Double cliff layer regulation and control high-speed single-row carrier photoelectric detector |
| CN117913160B (en) * | 2024-03-20 | 2024-05-31 | 度亘核芯光电技术(苏州)有限公司 | Double cliff layer regulation and control high-speed single-row carrier photoelectric detector |
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