JP2008135789A5 - - Google Patents

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Publication number
JP2008135789A5
JP2008135789A5 JP2008043214A JP2008043214A JP2008135789A5 JP 2008135789 A5 JP2008135789 A5 JP 2008135789A5 JP 2008043214 A JP2008043214 A JP 2008043214A JP 2008043214 A JP2008043214 A JP 2008043214A JP 2008135789 A5 JP2008135789 A5 JP 2008135789A5
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JP
Japan
Prior art keywords
electrode
light emitting
region
conductivity type
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008043214A
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English (en)
Japanese (ja)
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JP2008135789A (ja
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Publication date
Application filed filed Critical
Priority to JP2008043214A priority Critical patent/JP2008135789A/ja
Priority claimed from JP2008043214A external-priority patent/JP2008135789A/ja
Publication of JP2008135789A publication Critical patent/JP2008135789A/ja
Publication of JP2008135789A5 publication Critical patent/JP2008135789A5/ja
Pending legal-status Critical Current

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JP2008043214A 2002-05-27 2008-02-25 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置 Pending JP2008135789A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008043214A JP2008135789A (ja) 2002-05-27 2008-02-25 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002152322 2002-05-27
JP2008043214A JP2008135789A (ja) 2002-05-27 2008-02-25 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2007179135A Division JP2007300134A (ja) 2002-05-27 2007-07-07 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置

Publications (2)

Publication Number Publication Date
JP2008135789A JP2008135789A (ja) 2008-06-12
JP2008135789A5 true JP2008135789A5 (enExample) 2008-07-24

Family

ID=39560352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008043214A Pending JP2008135789A (ja) 2002-05-27 2008-02-25 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置

Country Status (1)

Country Link
JP (1) JP2008135789A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394296B (zh) * 2008-09-09 2013-04-21 Bridgelux Inc 具改良式電極結構之發光元件
KR101004858B1 (ko) * 2008-11-06 2010-12-28 삼성엘이디 주식회사 화합물 반도체 발광 소자 및 그 제조방법
US8188496B2 (en) 2008-11-06 2012-05-29 Samsung Led Co., Ltd. Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same
JP2010219163A (ja) * 2009-03-13 2010-09-30 Koito Mfg Co Ltd 発光モジュール、および灯具ユニット
JP2011119491A (ja) * 2009-12-04 2011-06-16 Showa Denko Kk 半導体発光素子、電子機器および発光装置
WO2011083923A2 (en) * 2010-01-07 2011-07-14 Seoul Opto Device Co., Ltd. Light emitting diode having electrode pads
JP2012114329A (ja) * 2010-11-26 2012-06-14 Toshiba Corp 半導体発光素子及びその製造方法
JP5989420B2 (ja) 2012-06-28 2016-09-07 株式会社東芝 半導体発光装置
KR101378950B1 (ko) 2013-01-10 2014-04-17 주식회사 세미콘라이트 반도체 발광소자
WO2015190817A1 (ko) 2014-06-10 2015-12-17 주식회사 세미콘라이트 반도체 발광소자
KR101611480B1 (ko) 2014-07-10 2016-04-12 주식회사 세미콘라이트 반도체 발광소자
JP6539023B2 (ja) * 2014-07-18 2019-07-03 株式会社堀場製作所 粒子分析装置
TWI797140B (zh) * 2018-06-25 2023-04-01 晶元光電股份有限公司 具有可伸張軟性載板的發光裝置
JP2024002209A (ja) * 2022-06-23 2024-01-11 スタンレー電気株式会社 半導体発光装置、接合構造体、および、半導体発光装置の製造方法

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