JP2008135789A - 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置 - Google Patents

窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置 Download PDF

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Publication number
JP2008135789A
JP2008135789A JP2008043214A JP2008043214A JP2008135789A JP 2008135789 A JP2008135789 A JP 2008135789A JP 2008043214 A JP2008043214 A JP 2008043214A JP 2008043214 A JP2008043214 A JP 2008043214A JP 2008135789 A JP2008135789 A JP 2008135789A
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Japan
Prior art keywords
electrode
light emitting
light
layer
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008043214A
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English (en)
Japanese (ja)
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JP2008135789A5 (enExample
Inventor
Takeshi Kususe
健 楠瀬
Daisuke Sanga
大輔 三賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2008043214A priority Critical patent/JP2008135789A/ja
Publication of JP2008135789A publication Critical patent/JP2008135789A/ja
Publication of JP2008135789A5 publication Critical patent/JP2008135789A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2008043214A 2002-05-27 2008-02-25 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置 Pending JP2008135789A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008043214A JP2008135789A (ja) 2002-05-27 2008-02-25 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002152322 2002-05-27
JP2008043214A JP2008135789A (ja) 2002-05-27 2008-02-25 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2007179135A Division JP2007300134A (ja) 2002-05-27 2007-07-07 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置

Publications (2)

Publication Number Publication Date
JP2008135789A true JP2008135789A (ja) 2008-06-12
JP2008135789A5 JP2008135789A5 (enExample) 2008-07-24

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JP2008043214A Pending JP2008135789A (ja) 2002-05-27 2008-02-25 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置

Country Status (1)

Country Link
JP (1) JP2008135789A (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010114411A (ja) * 2008-11-06 2010-05-20 Samsung Electro-Mechanics Co Ltd 化合物半導体発光素子及びその製造方法
JP2010219163A (ja) * 2009-03-13 2010-09-30 Koito Mfg Co Ltd 発光モジュール、および灯具ユニット
WO2011068161A1 (ja) * 2009-12-04 2011-06-09 昭和電工株式会社 半導体発光素子、電子機器および発光装置
KR101136441B1 (ko) * 2008-09-09 2012-04-19 브리지럭스 인코포레이티드 개량된 전극 구조를 구비한 발광 소자
US8188496B2 (en) 2008-11-06 2012-05-29 Samsung Led Co., Ltd. Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same
JP2012114329A (ja) * 2010-11-26 2012-06-14 Toshiba Corp 半導体発光素子及びその製造方法
KR101378950B1 (ko) 2013-01-10 2014-04-17 주식회사 세미콘라이트 반도체 발광소자
US9041033B2 (en) 2012-06-28 2015-05-26 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2015173289A (ja) * 2010-01-07 2015-10-01 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 複数の電極パッドを有する発光ダイオード
JP2016024024A (ja) * 2014-07-18 2016-02-08 株式会社堀場製作所 粒子分析装置
KR101611480B1 (ko) 2014-07-10 2016-04-12 주식회사 세미콘라이트 반도체 발광소자
US10008635B2 (en) 2014-06-10 2018-06-26 Semicon Light Co., Ltd. Semiconductor light-emitting element
CN110634853A (zh) * 2018-06-25 2019-12-31 晶元光电股份有限公司 具有可伸张软性载板的发光装置
WO2023248758A1 (ja) * 2022-06-23 2023-12-28 スタンレー電気株式会社 半導体発光装置、接合構造体、および、半導体発光装置の製造方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101136441B1 (ko) * 2008-09-09 2012-04-19 브리지럭스 인코포레이티드 개량된 전극 구조를 구비한 발광 소자
US8916402B2 (en) 2008-11-06 2014-12-23 Samsung Electronics Co., Ltd. Semiconductor light emitting device including substrate having protection layers providing protection against chemicals and method for manufacturing the same
US8188496B2 (en) 2008-11-06 2012-05-29 Samsung Led Co., Ltd. Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same
JP2010114411A (ja) * 2008-11-06 2010-05-20 Samsung Electro-Mechanics Co Ltd 化合物半導体発光素子及びその製造方法
JP2010219163A (ja) * 2009-03-13 2010-09-30 Koito Mfg Co Ltd 発光モジュール、および灯具ユニット
US8592837B2 (en) 2009-12-04 2013-11-26 Toyoda Gosei Co., Ltd. Semiconductor light emitting element, electronic apparatus, and light emitting device
WO2011068161A1 (ja) * 2009-12-04 2011-06-09 昭和電工株式会社 半導体発光素子、電子機器および発光装置
JP2015173289A (ja) * 2010-01-07 2015-10-01 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 複数の電極パッドを有する発光ダイオード
JP2012114329A (ja) * 2010-11-26 2012-06-14 Toshiba Corp 半導体発光素子及びその製造方法
US9041033B2 (en) 2012-06-28 2015-05-26 Kabushiki Kaisha Toshiba Semiconductor light emitting device
KR101378950B1 (ko) 2013-01-10 2014-04-17 주식회사 세미콘라이트 반도체 발광소자
US10008635B2 (en) 2014-06-10 2018-06-26 Semicon Light Co., Ltd. Semiconductor light-emitting element
KR101611480B1 (ko) 2014-07-10 2016-04-12 주식회사 세미콘라이트 반도체 발광소자
JP2016024024A (ja) * 2014-07-18 2016-02-08 株式会社堀場製作所 粒子分析装置
US10254213B2 (en) 2014-07-18 2019-04-09 Horiba, Ltd. Particle analysis apparatus
CN110634853A (zh) * 2018-06-25 2019-12-31 晶元光电股份有限公司 具有可伸张软性载板的发光装置
WO2023248758A1 (ja) * 2022-06-23 2023-12-28 スタンレー電気株式会社 半導体発光装置、接合構造体、および、半導体発光装置の製造方法

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