JP2012521644A5 - - Google Patents

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Publication number
JP2012521644A5
JP2012521644A5 JP2012501239A JP2012501239A JP2012521644A5 JP 2012521644 A5 JP2012521644 A5 JP 2012521644A5 JP 2012501239 A JP2012501239 A JP 2012501239A JP 2012501239 A JP2012501239 A JP 2012501239A JP 2012521644 A5 JP2012521644 A5 JP 2012521644A5
Authority
JP
Japan
Prior art keywords
semiconductor body
emitting diode
light emitting
diode according
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012501239A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012521644A (ja
Filing date
Publication date
Priority claimed from DE102009020127A external-priority patent/DE102009020127A1/de
Application filed filed Critical
Publication of JP2012521644A publication Critical patent/JP2012521644A/ja
Publication of JP2012521644A5 publication Critical patent/JP2012521644A5/ja
Pending legal-status Critical Current

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JP2012501239A 2009-03-25 2010-03-15 発光ダイオード Pending JP2012521644A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102009001844 2009-03-25
DE102009001844.1 2009-03-25
DE102009020127A DE102009020127A1 (de) 2009-03-25 2009-05-06 Leuchtdiode
DE102009020127.0 2009-05-06
PCT/EP2010/053304 WO2010108811A1 (de) 2009-03-25 2010-03-15 Leuchtdiode

Publications (2)

Publication Number Publication Date
JP2012521644A JP2012521644A (ja) 2012-09-13
JP2012521644A5 true JP2012521644A5 (enExample) 2013-04-18

Family

ID=42664166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012501239A Pending JP2012521644A (ja) 2009-03-25 2010-03-15 発光ダイオード

Country Status (8)

Country Link
US (1) US20120256161A1 (enExample)
EP (1) EP2412021B1 (enExample)
JP (1) JP2012521644A (enExample)
KR (1) KR20110137814A (enExample)
CN (1) CN102362348A (enExample)
DE (1) DE102009020127A1 (enExample)
TW (1) TWI520374B (enExample)
WO (1) WO2010108811A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130264588A1 (en) * 2012-04-09 2013-10-10 Phostek, Inc. Compact led package
DE102015116595A1 (de) 2015-09-30 2017-03-30 Osram Opto Semiconductors Gmbh Bauelement mit einem Licht emittierenden Halbleiterchip
DE102016101442B4 (de) 2016-01-27 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement
DE102016104280A1 (de) 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102016113002B4 (de) 2016-07-14 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen
FR3061605B1 (fr) * 2016-12-29 2019-05-31 Aledia Dispositif optoélectronique à diodes électroluminescentes
DE102018124473A1 (de) 2018-10-04 2020-04-09 Osram Opto Semiconductors Gmbh Optoelektronisches bauteil, verfahren zur ansteuerung eines optoelektronischen bauteils und beleuchtungsvorrichtung
JP7414419B2 (ja) * 2019-07-30 2024-01-16 キヤノン株式会社 発光素子及び発光素子の製造方法
CN115172544A (zh) * 2022-06-22 2022-10-11 广东中民工业技术创新研究院有限公司 一种基于全氮化物的外延芯片结构和发光器件

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JPH11135838A (ja) * 1997-10-20 1999-05-21 Ind Technol Res Inst 白色発光ダイオード及びその製造方法
AU4557300A (en) * 1999-04-27 2000-11-10 Karandashov, Sergey Radiation source
JP2003502847A (ja) * 1999-06-14 2003-01-21 アウグスト，カルロス・ジヨタ・エルリ・ペー 積み重ね型波長選択オプトエレクトロニクス装置
AU4139101A (en) * 1999-12-03 2001-06-12 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
TW497277B (en) * 2000-03-10 2002-08-01 Toshiba Corp Semiconductor light emitting device and method for manufacturing the same
JP2004296219A (ja) * 2003-03-26 2004-10-21 Fuji Photo Film Co Ltd 発光素子
US7009213B2 (en) * 2003-07-31 2006-03-07 Lumileds Lighting U.S., Llc Light emitting devices with improved light extraction efficiency
DE10354936B4 (de) * 2003-09-30 2012-02-16 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
JP2005252222A (ja) * 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
DE102004052245A1 (de) * 2004-06-30 2006-02-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und strahlungsemittierendes Halbleiterbauelement mit einem derartigen Halbleiterchip
US7223998B2 (en) * 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
TWI267212B (en) * 2004-12-30 2006-11-21 Ind Tech Res Inst Quantum dots/quantum well light emitting diode
JP4971672B2 (ja) * 2005-09-09 2012-07-11 パナソニック株式会社 発光装置
US7285791B2 (en) * 2006-03-24 2007-10-23 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
EP2033236A4 (en) * 2006-06-12 2014-10-22 3M Innovative Properties Co LED DEVICE WITH RE-ESTIMATING SEMICONDUCTOR CONSTRUCTION AND OPTICAL ELEMENT
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TWI349371B (en) * 2007-02-13 2011-09-21 Epistar Corp An optoelectronical semiconductor device having a bonding structure
US20100283074A1 (en) * 2007-10-08 2010-11-11 Kelley Tommie W Light emitting diode with bonded semiconductor wavelength converter
JP2009099893A (ja) * 2007-10-19 2009-05-07 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
CN101897038B (zh) * 2007-12-10 2012-08-29 3M创新有限公司 波长转换发光二极管及其制造方法

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