JP2012528472A5 - - Google Patents

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Publication number
JP2012528472A5
JP2012528472A5 JP2012512270A JP2012512270A JP2012528472A5 JP 2012528472 A5 JP2012528472 A5 JP 2012528472A5 JP 2012512270 A JP2012512270 A JP 2012512270A JP 2012512270 A JP2012512270 A JP 2012512270A JP 2012528472 A5 JP2012528472 A5 JP 2012528472A5
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JP
Japan
Prior art keywords
semiconductor chip
radiation
roughened region
layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012512270A
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English (en)
Japanese (ja)
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JP2012528472A (ja
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Publication date
Priority claimed from DE102009023351A external-priority patent/DE102009023351A1/de
Application filed filed Critical
Publication of JP2012528472A publication Critical patent/JP2012528472A/ja
Publication of JP2012528472A5 publication Critical patent/JP2012528472A5/ja
Pending legal-status Critical Current

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JP2012512270A 2009-05-29 2010-04-08 オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 Pending JP2012528472A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009023351A DE102009023351A1 (de) 2009-05-29 2009-05-29 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102009023351.2 2009-05-29
PCT/EP2010/054662 WO2010136251A1 (de) 2009-05-29 2010-04-08 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips

Publications (2)

Publication Number Publication Date
JP2012528472A JP2012528472A (ja) 2012-11-12
JP2012528472A5 true JP2012528472A5 (enExample) 2013-02-28

Family

ID=42269418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012512270A Pending JP2012528472A (ja) 2009-05-29 2010-04-08 オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法

Country Status (7)

Country Link
US (2) US8900888B2 (enExample)
EP (1) EP2436045B1 (enExample)
JP (1) JP2012528472A (enExample)
KR (1) KR20120027035A (enExample)
CN (1) CN102428579B (enExample)
DE (1) DE102009023351A1 (enExample)
WO (1) WO2010136251A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5454303B2 (ja) * 2010-03-30 2014-03-26 ソニー株式会社 半導体発光素子アレイ
CN103137816B (zh) * 2011-12-03 2015-09-30 清华大学 发光二极管
CN103137812B (zh) * 2011-12-03 2015-11-25 清华大学 发光二极管
DE102012217776A1 (de) * 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
KR101365229B1 (ko) * 2013-05-28 2014-02-19 부경대학교 산학협력단 백색 ｌｅｄ와 그 제조방법
DE102015105693B4 (de) * 2015-04-14 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements
DE102018107615B4 (de) * 2017-09-06 2024-08-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN108319066B (zh) * 2018-02-11 2022-03-22 京东方科技集团股份有限公司 彩膜基板及其制造方法、显示装置
DE102018105085B4 (de) * 2018-03-06 2024-05-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil und Leuchtmittel
US20200194631A1 (en) 2018-12-14 2020-06-18 Osram Opto Semiconductors Gmbh Method for Producing a Light-Emitting Semiconductor Device and Light-Emitting Semiconductor Device
DE102020103070A1 (de) * 2020-02-06 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung optoelektronischer bauelemente und optoelektronisches bauelement
DE102024109325A1 (de) * 2024-04-03 2025-10-09 Ams-Osram International Gmbh Verfahren zur herstellung einer vielzahl von strahlungsemittierenden bauelementen und strahlungsemittierendes bauelement

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KR20060079210A (ko) * 2003-09-08 2006-07-05 그룹 Iv 세미콘덕터 아이엔씨. 고체 형태 백색 발광 소자 및 이를 이용한 디스플레이
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DE112008003200A5 (de) * 2007-09-28 2010-09-16 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper
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