JP2012528472A - オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 - Google Patents

オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 Download PDF

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JP2012528472A
JP2012528472A JP2012512270A JP2012512270A JP2012528472A JP 2012528472 A JP2012528472 A JP 2012528472A JP 2012512270 A JP2012512270 A JP 2012512270A JP 2012512270 A JP2012512270 A JP 2012512270A JP 2012528472 A JP2012528472 A JP 2012528472A
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semiconductor chip
radiation
roughened region
region
optoelectronic semiconductor
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JP2012528472A5 (enExample
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ニコラウス グマインワイザー
ベルトホールド ハーン
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
JP2012512270A 2009-05-29 2010-04-08 オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 Pending JP2012528472A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009023351A DE102009023351A1 (de) 2009-05-29 2009-05-29 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102009023351.2 2009-05-29
PCT/EP2010/054662 WO2010136251A1 (de) 2009-05-29 2010-04-08 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips

Publications (2)

Publication Number Publication Date
JP2012528472A true JP2012528472A (ja) 2012-11-12
JP2012528472A5 JP2012528472A5 (enExample) 2013-02-28

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JP2012512270A Pending JP2012528472A (ja) 2009-05-29 2010-04-08 オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法

Country Status (7)

Country Link
US (2) US8900888B2 (enExample)
EP (1) EP2436045B1 (enExample)
JP (1) JP2012528472A (enExample)
KR (1) KR20120027035A (enExample)
CN (1) CN102428579B (enExample)
DE (1) DE102009023351A1 (enExample)
WO (1) WO2010136251A1 (enExample)

Cited By (1)

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JP2011211084A (ja) * 2010-03-30 2011-10-20 Sony Corp 半導体発光素子および半導体発光素子アレイ

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CN103137816B (zh) * 2011-12-03 2015-09-30 清华大学 发光二极管
CN103137812B (zh) * 2011-12-03 2015-11-25 清华大学 发光二极管
DE102012217776A1 (de) * 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
KR101365229B1 (ko) * 2013-05-28 2014-02-19 부경대학교 산학협력단 백색 ｌｅｄ와 그 제조방법
DE102015105693B4 (de) * 2015-04-14 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements
DE102018107615B4 (de) * 2017-09-06 2024-08-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN108319066B (zh) * 2018-02-11 2022-03-22 京东方科技集团股份有限公司 彩膜基板及其制造方法、显示装置
DE102018105085B4 (de) * 2018-03-06 2024-05-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil und Leuchtmittel
US20200194631A1 (en) 2018-12-14 2020-06-18 Osram Opto Semiconductors Gmbh Method for Producing a Light-Emitting Semiconductor Device and Light-Emitting Semiconductor Device
DE102020103070A1 (de) * 2020-02-06 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung optoelektronischer bauelemente und optoelektronisches bauelement
DE102024109325A1 (de) * 2024-04-03 2025-10-09 Ams-Osram International Gmbh Verfahren zur herstellung einer vielzahl von strahlungsemittierenden bauelementen und strahlungsemittierendes bauelement

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JP2007324608A (ja) * 2006-05-31 2007-12-13 Philips Lumileds Lightng Co Llc 波長変換部材の変更による色管理
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JP2008523615A (ja) * 2004-12-09 2008-07-03 スリーエム イノベイティブ プロパティズ カンパニー 多色、広帯域または「白色」発光用の適合型短波長ｌｅｄ
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211084A (ja) * 2010-03-30 2011-10-20 Sony Corp 半導体発光素子および半導体発光素子アレイ

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US8900888B2 (en) 2014-12-02
KR20120027035A (ko) 2012-03-20
WO2010136251A1 (de) 2010-12-02
US20150053919A1 (en) 2015-02-26
CN102428579A (zh) 2012-04-25
EP2436045A1 (de) 2012-04-04
DE102009023351A1 (de) 2010-12-02
US9306131B2 (en) 2016-04-05
EP2436045B1 (de) 2017-01-25
US20120132945A1 (en) 2012-05-31
CN102428579B (zh) 2015-02-25

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