JP2012528472A - オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 - Google Patents

オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 Download PDF

Info

Publication number
JP2012528472A
JP2012528472A JP2012512270A JP2012512270A JP2012528472A JP 2012528472 A JP2012528472 A JP 2012528472A JP 2012512270 A JP2012512270 A JP 2012512270A JP 2012512270 A JP2012512270 A JP 2012512270A JP 2012528472 A JP2012528472 A JP 2012528472A
Authority
JP
Japan
Prior art keywords
semiconductor chip
radiation
roughened region
region
optoelectronic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012512270A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012528472A5 (enExample
Inventor
ニコラウス グマインワイザー
ベルトホールド ハーン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2012528472A publication Critical patent/JP2012528472A/ja
Publication of JP2012528472A5 publication Critical patent/JP2012528472A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
JP2012512270A 2009-05-29 2010-04-08 オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 Pending JP2012528472A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009023351.2 2009-05-29
DE102009023351A DE102009023351A1 (de) 2009-05-29 2009-05-29 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
PCT/EP2010/054662 WO2010136251A1 (de) 2009-05-29 2010-04-08 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips

Publications (2)

Publication Number Publication Date
JP2012528472A true JP2012528472A (ja) 2012-11-12
JP2012528472A5 JP2012528472A5 (enExample) 2013-02-28

Family

ID=42269418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012512270A Pending JP2012528472A (ja) 2009-05-29 2010-04-08 オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法

Country Status (7)

Country Link
US (2) US8900888B2 (enExample)
EP (1) EP2436045B1 (enExample)
JP (1) JP2012528472A (enExample)
KR (1) KR20120027035A (enExample)
CN (1) CN102428579B (enExample)
DE (1) DE102009023351A1 (enExample)
WO (1) WO2010136251A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211084A (ja) * 2010-03-30 2011-10-20 Sony Corp 半導体発光素子および半導体発光素子アレイ

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137812B (zh) * 2011-12-03 2015-11-25 清华大学 发光二极管
CN103137816B (zh) * 2011-12-03 2015-09-30 清华大学 发光二极管
DE102012217776A1 (de) * 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
KR101365229B1 (ko) * 2013-05-28 2014-02-19 부경대학교 산학협력단 백색 ｌｅｄ와 그 제조방법
DE102015105693B4 (de) * 2015-04-14 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements
DE102018107615B4 (de) * 2017-09-06 2024-08-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN108319066B (zh) * 2018-02-11 2022-03-22 京东方科技集团股份有限公司 彩膜基板及其制造方法、显示装置
DE102018105085B4 (de) * 2018-03-06 2024-05-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil und Leuchtmittel
US20200194631A1 (en) 2018-12-14 2020-06-18 Osram Opto Semiconductors Gmbh Method for Producing a Light-Emitting Semiconductor Device and Light-Emitting Semiconductor Device
DE102020103070A1 (de) * 2020-02-06 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung optoelektronischer bauelemente und optoelektronisches bauelement
DE102024109325A1 (de) * 2024-04-03 2025-10-09 Ams-Osram International Gmbh Verfahren zur herstellung einer vielzahl von strahlungsemittierenden bauelementen und strahlungsemittierendes bauelement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006036446A2 (en) * 2004-09-10 2006-04-06 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
JP2007324608A (ja) * 2006-05-31 2007-12-13 Philips Lumileds Lightng Co Llc 波長変換部材の変更による色管理
JP2008523615A (ja) * 2004-12-09 2008-07-03 スリーエム イノベイティブ プロパティズ カンパニー 多色、広帯域または「白色」発光用の適合型短波長ｌｅｄ
US20090101934A1 (en) * 2006-03-13 2009-04-23 Centre National De La Recherche Scientifique-Cnrs Monolithic White Light-Emitting Diode

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6293700B1 (en) 1999-09-24 2001-09-25 Fluke Corporation Calibrated isothermal assembly for a thermocouple thermometer
US6696703B2 (en) 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
EP2270883A3 (en) 1999-12-03 2015-09-30 Cree, Inc. Enhanced light extraction in LEDs through the use of internal and external optical elements
EP1665396A1 (en) * 2003-09-08 2006-06-07 Group IV Semiconductor Inc. Solid state white light emitter and display using same
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US20070267646A1 (en) * 2004-06-03 2007-11-22 Philips Lumileds Lighting Company, Llc Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic
EP1995794A4 (en) * 2006-03-10 2011-08-31 Panasonic Elec Works Co Ltd Light-emitting device
US7285791B2 (en) * 2006-03-24 2007-10-23 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
KR100723233B1 (ko) * 2006-03-31 2007-05-29 삼성전기주식회사 백색 발광 소자
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
KR100826379B1 (ko) * 2006-08-08 2008-05-02 삼성전기주식회사 모노리식 백색 발광소자
WO2008060615A1 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California Transparent mirrorless light emitting diode
EP2087563B1 (en) 2006-11-15 2014-09-24 The Regents of The University of California Textured phosphor conversion layer light emitting diode
KR20090082923A (ko) * 2006-11-15 2009-07-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 다중 추출기를 통하여 광을 고효율로 추출하는 발광 다이오드
DE102007004304A1 (de) * 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
KR100856282B1 (ko) * 2007-03-05 2008-09-03 삼성전기주식회사 광자 리사이클링을 이용한 광자결정 발광소자
US8426843B2 (en) * 2007-09-28 2013-04-23 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor body
WO2009048704A2 (en) * 2007-10-08 2009-04-16 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
US20100295075A1 (en) 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
TWI416757B (zh) * 2008-10-13 2013-11-21 榮創能源科技股份有限公司 多波長發光二極體及其製造方法
CN101728462A (zh) * 2008-10-17 2010-06-09 先进开发光电股份有限公司 多波长发光二极管及其制造方法
KR101125395B1 (ko) * 2009-10-28 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006036446A2 (en) * 2004-09-10 2006-04-06 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
JP2008523615A (ja) * 2004-12-09 2008-07-03 スリーエム イノベイティブ プロパティズ カンパニー 多色、広帯域または「白色」発光用の適合型短波長ｌｅｄ
US20090101934A1 (en) * 2006-03-13 2009-04-23 Centre National De La Recherche Scientifique-Cnrs Monolithic White Light-Emitting Diode
JP2007324608A (ja) * 2006-05-31 2007-12-13 Philips Lumileds Lightng Co Llc 波長変換部材の変更による色管理

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211084A (ja) * 2010-03-30 2011-10-20 Sony Corp 半導体発光素子および半導体発光素子アレイ

Also Published As

Publication number Publication date
US20120132945A1 (en) 2012-05-31
US9306131B2 (en) 2016-04-05
KR20120027035A (ko) 2012-03-20
EP2436045A1 (de) 2012-04-04
EP2436045B1 (de) 2017-01-25
CN102428579A (zh) 2012-04-25
US8900888B2 (en) 2014-12-02
CN102428579B (zh) 2015-02-25
DE102009023351A1 (de) 2010-12-02
WO2010136251A1 (de) 2010-12-02
US20150053919A1 (en) 2015-02-26

Similar Documents

Publication Publication Date Title
US9306131B2 (en) Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip
US12349523B2 (en) Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component
US7781779B2 (en) Light emitting devices including wavelength converting material
JP2008536294A (ja) パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード（ｌｅｄ）
KR20100059854A (ko) 복사­방출 반도체 몸체
JP7500755B2 (ja) モノリシックｌｅｄピクセル
US11158667B2 (en) Optoelectronic semiconductor component
CN113809215B (zh) 发光器件及包含器件的像素与显示器和相关制法
TWI697076B (zh) 發光元件及其製造方法
JP5264935B2 (ja) オプトエレクトロニクス部品およびその製造方法
KR20110102061A (ko) Ｌｅｄ 소자 및 그 제조 방법
TW201349584A (zh) 半導體發光裝置及其製造方法
US11876154B2 (en) Light emitting diode device and method for manufacturing the same
US20240266383A1 (en) Multiple wavelength light-emitting diode chip and related methods
KR101899468B1 (ko) 발광 다이오드 패키지 및 그 제조 방법
KR100859282B1 (ko) 다중파장 발광다이오드 및 이의 제조방법
KR100699147B1 (ko) 다파장 발광소자 및 그 제조방법
JP2007324411A (ja) 半導体発光素子及びその製造方法、並びに半導体発光素子を用いた照明装置
KR20050063254A (ko) 포스퍼가 도포된 발광 다이오드를 이용한 디스플레이 및그의 제조방법
US9985170B2 (en) Flip chip light emitting diode having transparent material with surface features
TWI581459B (zh) 發光元件及其製造方法
KR101068158B1 (ko) 에어면을 포함하는 발광소자 및 그 제조방법
KR20230124338A (ko) 형광체 사용없이 트렌치를 이용하여 다양한 색상의 광을 구현할 수 있는 발광 다이오드
TW202401873A (zh) 用於發光二極體晶片的光萃取結構及相關方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130107

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130107

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131227

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140128

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140701