CN102428579B - 光电子半导体芯片和用于制造光电子半导体芯片的方法 - Google Patents
光电子半导体芯片和用于制造光电子半导体芯片的方法 Download PDFInfo
- Publication number
- CN102428579B CN102428579B CN201080021820.9A CN201080021820A CN102428579B CN 102428579 B CN102428579 B CN 102428579B CN 201080021820 A CN201080021820 A CN 201080021820A CN 102428579 B CN102428579 B CN 102428579B
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- semiconductor chip
- radiation
- layer
- roughening
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 177
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 230000005855 radiation Effects 0.000 claims abstract description 99
- 238000006243 chemical reaction Methods 0.000 claims abstract description 87
- 238000000034 method Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 230000003595 spectral effect Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 230000035515 penetration Effects 0.000 claims description 2
- 238000007788 roughening Methods 0.000 description 87
- 238000005530 etching Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
- H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009023351A DE102009023351A1 (de) | 2009-05-29 | 2009-05-29 | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| DE102009023351.2 | 2009-05-29 | ||
| PCT/EP2010/054662 WO2010136251A1 (de) | 2009-05-29 | 2010-04-08 | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102428579A CN102428579A (zh) | 2012-04-25 |
| CN102428579B true CN102428579B (zh) | 2015-02-25 |
Family
ID=42269418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080021820.9A Expired - Fee Related CN102428579B (zh) | 2009-05-29 | 2010-04-08 | 光电子半导体芯片和用于制造光电子半导体芯片的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8900888B2 (enExample) |
| EP (1) | EP2436045B1 (enExample) |
| JP (1) | JP2012528472A (enExample) |
| KR (1) | KR20120027035A (enExample) |
| CN (1) | CN102428579B (enExample) |
| DE (1) | DE102009023351A1 (enExample) |
| WO (1) | WO2010136251A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5454303B2 (ja) * | 2010-03-30 | 2014-03-26 | ソニー株式会社 | 半導体発光素子アレイ |
| CN103137816B (zh) * | 2011-12-03 | 2015-09-30 | 清华大学 | 发光二极管 |
| CN103137812B (zh) * | 2011-12-03 | 2015-11-25 | 清华大学 | 发光二极管 |
| DE102012217776A1 (de) * | 2012-09-28 | 2014-06-12 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102013103602A1 (de) * | 2013-04-10 | 2014-10-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung |
| KR101365229B1 (ko) * | 2013-05-28 | 2014-02-19 | 부경대학교 산학협력단 | 백색 ｌｅｄ와 그 제조방법 |
| DE102015105693B4 (de) * | 2015-04-14 | 2021-05-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements |
| DE102018107615B4 (de) * | 2017-09-06 | 2024-08-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| CN108319066B (zh) * | 2018-02-11 | 2022-03-22 | 京东方科技集团股份有限公司 | 彩膜基板及其制造方法、显示装置 |
| DE102018105085B4 (de) * | 2018-03-06 | 2024-05-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauteil und Leuchtmittel |
| US20200194631A1 (en) | 2018-12-14 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Method for Producing a Light-Emitting Semiconductor Device and Light-Emitting Semiconductor Device |
| DE102020103070A1 (de) * | 2020-02-06 | 2021-08-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung optoelektronischer bauelemente und optoelektronisches bauelement |
| DE102024109325A1 (de) * | 2024-04-03 | 2025-10-09 | Ams-Osram International Gmbh | Verfahren zur herstellung einer vielzahl von strahlungsemittierenden bauelementen und strahlungsemittierendes bauelement |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1423842A (zh) * | 1999-12-03 | 2003-06-11 | 美商克立光学公司 | 藉由内部及外部光学组件之使用而加强发光二极管中的光放出 |
| CN101728462A (zh) * | 2008-10-17 | 2010-06-09 | 先进开发光电股份有限公司 | 多波长发光二极管及其制造方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6293700B1 (en) | 1999-09-24 | 2001-09-25 | Fluke Corporation | Calibrated isothermal assembly for a thermocouple thermometer |
| US6696703B2 (en) | 1999-09-27 | 2004-02-24 | Lumileds Lighting U.S., Llc | Thin film phosphor-converted light emitting diode device |
| KR20060079210A (ko) * | 2003-09-08 | 2006-07-05 | 그룹 Iv 세미콘덕터 아이엔씨. | 고체 형태 백색 발광 소자 및 이를 이용한 디스플레이 |
| US7808011B2 (en) * | 2004-03-19 | 2010-10-05 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting devices including in-plane light emitting layers |
| US20070267646A1 (en) * | 2004-06-03 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic |
| US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
| US7223998B2 (en) | 2004-09-10 | 2007-05-29 | The Regents Of The University Of California | White, single or multi-color light emitting diodes by recycling guided modes |
| US7462502B2 (en) * | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
| US7402831B2 (en) | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
| KR101030659B1 (ko) * | 2006-03-10 | 2011-04-20 | 파나소닉 전공 주식회사 | 발광 소자 |
| FR2898434B1 (fr) * | 2006-03-13 | 2008-05-23 | Centre Nat Rech Scient | Diode electroluminescente blanche monolithique |
| US7285791B2 (en) * | 2006-03-24 | 2007-10-23 | Goldeneye, Inc. | Wavelength conversion chip for use in solid-state lighting and method for making same |
| KR100723233B1 (ko) * | 2006-03-31 | 2007-05-29 | 삼성전기주식회사 | 백색 발광 소자 |
| KR100736623B1 (ko) * | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
| KR100826379B1 (ko) * | 2006-08-08 | 2008-05-02 | 삼성전기주식회사 | 모노리식 백색 발광소자 |
| TW200830593A (en) * | 2006-11-15 | 2008-07-16 | Univ California | Transparent mirrorless light emitting diode |
| EP2843716A3 (en) | 2006-11-15 | 2015-04-29 | The Regents of The University of California | Textured phosphor conversion layer light emitting diode |
| KR20090082923A (ko) * | 2006-11-15 | 2009-07-31 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 다중 추출기를 통하여 광을 고효율로 추출하는 발광 다이오드 |
| DE102007004304A1 (de) * | 2007-01-29 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
| KR100856282B1 (ko) * | 2007-03-05 | 2008-09-03 | 삼성전기주식회사 | 광자 리사이클링을 이용한 광자결정 발광소자 |
| DE112008003200A5 (de) * | 2007-09-28 | 2010-09-16 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterkörper |
| US20100283074A1 (en) * | 2007-10-08 | 2010-11-11 | Kelley Tommie W | Light emitting diode with bonded semiconductor wavelength converter |
| CN101897038B (zh) | 2007-12-10 | 2012-08-29 | 3M创新有限公司 | 波长转换发光二极管及其制造方法 |
| TWI416757B (zh) * | 2008-10-13 | 2013-11-21 | Advanced Optoelectronic Tech | 多波長發光二極體及其製造方法 |
| KR101125395B1 (ko) * | 2009-10-28 | 2012-03-27 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
-
2009
- 2009-05-29 DE DE102009023351A patent/DE102009023351A1/de not_active Withdrawn
-
2010
- 2010-04-08 US US13/318,818 patent/US8900888B2/en not_active Expired - Fee Related
- 2010-04-08 WO PCT/EP2010/054662 patent/WO2010136251A1/de not_active Ceased
- 2010-04-08 KR KR1020117031462A patent/KR20120027035A/ko not_active Withdrawn
- 2010-04-08 JP JP2012512270A patent/JP2012528472A/ja active Pending
- 2010-04-08 EP EP10713203.7A patent/EP2436045B1/de not_active Not-in-force
- 2010-04-08 CN CN201080021820.9A patent/CN102428579B/zh not_active Expired - Fee Related
-
2014
- 2014-10-29 US US14/526,713 patent/US9306131B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1423842A (zh) * | 1999-12-03 | 2003-06-11 | 美商克立光学公司 | 藉由内部及外部光学组件之使用而加强发光二极管中的光放出 |
| CN101728462A (zh) * | 2008-10-17 | 2010-06-09 | 先进开发光电股份有限公司 | 多波长发光二极管及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8900888B2 (en) | 2014-12-02 |
| KR20120027035A (ko) | 2012-03-20 |
| WO2010136251A1 (de) | 2010-12-02 |
| US20150053919A1 (en) | 2015-02-26 |
| CN102428579A (zh) | 2012-04-25 |
| EP2436045A1 (de) | 2012-04-04 |
| DE102009023351A1 (de) | 2010-12-02 |
| US9306131B2 (en) | 2016-04-05 |
| EP2436045B1 (de) | 2017-01-25 |
| US20120132945A1 (en) | 2012-05-31 |
| JP2012528472A (ja) | 2012-11-12 |
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