JP2016521013A - 蛍光体シートとラミネートされた発光ダイオード及びその製造方法 - Google Patents
蛍光体シートとラミネートされた発光ダイオード及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title description 2
- 238000010030 laminating Methods 0.000 claims abstract description 6
- 238000003825 pressing Methods 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 29
- 229920001296 polysiloxane Polymers 0.000 claims description 9
- 229910000639 Spring steel Inorganic materials 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000003475 lamination Methods 0.000 description 31
- 239000004065 semiconductor Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 11
- 239000003570 air Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012080 ambient air Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
Abstract
Description
Claims (15)
- 発光ダイオード(LED)を覆って膜をラミネートすることと、
前記LEDの頂面に平坦化素子を押し付けることによって、前記LEDの頂面の上に置かれた前記膜の部分の厚さを減少させることと、
を有する方法。 - 前記ラミネートすることは、
マウントに取り付けられた前記LEDの前記頂面にプリフォームされた波長変換膜を取り付けることと、
前記波長変換膜と前記マウントとの間に気密シールを作り出すことと、
真空を作り出して前記波長変換膜と前記マウントとの間の空気を除去することと
を有する、請求項1に記載の方法。 - 前記波長変換膜の部分の厚さを前記減少させることは、真空を作り出して前記波長変換膜と前記マウントとの間の空気を除去することの後に実行される、請求項2に記載の方法。
- 前記波長変換膜の部分の厚さを前記減少させることは、前記LEDの前記頂面にプリフォームされた波長変換膜を取り付けることの最中に実行される、請求項2に記載の方法。
- 前記LEDの上に置かれた前記膜の部分の厚さを前記減少させることは、前記LEDの前記頂面の上に置かれた前記膜の前記部分の厚さを、前記減少させることの前の前記膜の厚さの80%未満まで減少させることを有する、請求項1に記載の方法。
- 前記膜は、シリコーンと混合された波長変換材料を有する、請求項1に記載の方法。
- 前記平坦化素子は、ばね鋼板を有する、請求項1に記載の方法。
- マウントに取り付けられた発光ダイオード(LED)と、
前記LEDの頂面及び側壁を覆って配設された波長変換膜と
を有し、前記側壁の第1の部分にある前記波長変換膜の厚さが、前記側壁の第2の部分にある前記波長変換膜の厚さよりも大きく、前記第1の部分は、前記第2の部分よりも、前記頂面に近いところにある、
構造体。 - 前記第2の部分にある前記波長変換膜の厚さは、前記第1の部分にある前記波長変換膜の厚さの80%以上である、請求項8に記載の構造体。
- 前記第2の部分にある前記波長変換膜の厚さは、前記LEDの前記頂面の上の前記波長変換膜の厚さの80%以上である、請求項8に記載の構造体。
- 前記波長変換膜は、シリコーンと混合された蛍光体を有する、請求項8に記載の構造体。
- 前記波長変換膜は、前記LEDをコンフォーマルに覆っている、請求項8に記載の構造体。
- 波長変換膜を、該膜が軟化するまで加熱し、
マウントに接続された複数の発光ダイオード(LED)に前記膜を取り付け、前記膜を取り付けることは、前記複数のLEDの頂面と、前記複数のLEDの間の前記マウントの部分とに、前記膜を接着して、前記マウントのエッジ周りに封止を形成することを有し、
真空を作り出して、前記波長変換膜と前記マウントとの間に捕獲されていた空気を除去し、且つ
前記複数のLEDの前記頂面の上に置かれた前記波長変換膜の部分の厚さを減少させる、
ことを有する方法。 - 前記厚さを減少させることは、
前記波長変換膜を、該膜が軟化するまで加熱し、且つ
前記複数のLEDの頂面に平坦化素子を押し付ける
ことを有する、請求項13に記載の方法。 - 前記厚さを減少させることは、前記波長変換膜の一部が前記複数のLEDの側方に押し進められることを有する、請求項13に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201361831750P | 2013-06-06 | 2013-06-06 | |
US61/831,750 | 2013-06-06 | ||
PCT/IB2014/061622 WO2014195819A1 (en) | 2013-06-06 | 2014-05-22 | Light emitting diode laminated with a phosphor sheet and manufacturing method thereof |
Publications (3)
Publication Number | Publication Date |
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JP2016521013A true JP2016521013A (ja) | 2016-07-14 |
JP2016521013A5 JP2016521013A5 (ja) | 2017-06-29 |
JP6370892B2 JP6370892B2 (ja) | 2018-08-08 |
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Country | Link |
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US (1) | US9985186B2 (ja) |
EP (1) | EP3005427B1 (ja) |
JP (1) | JP6370892B2 (ja) |
KR (1) | KR102227814B1 (ja) |
CN (1) | CN105264675B (ja) |
TW (1) | TWI691100B (ja) |
WO (1) | WO2014195819A1 (ja) |
Cited By (4)
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JP2018152463A (ja) * | 2017-03-13 | 2018-09-27 | スタンレー電気株式会社 | 半導体発光装置 |
JP2019140363A (ja) * | 2018-02-14 | 2019-08-22 | 同泰電子科技股▲分▼有限公司 | マイクロledモジュール及びその製造方法 |
JP2020150208A (ja) * | 2019-03-15 | 2020-09-17 | 市光工業株式会社 | 発光素子及び車両用灯具、並びに発光素子の製造方法 |
JP2021533576A (ja) * | 2018-08-17 | 2021-12-02 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 光電子部品及び光電子部品を製造するための方法 |
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US9911907B2 (en) | 2014-07-28 | 2018-03-06 | Epistar Corporation | Light-emitting apparatus |
JP6666340B2 (ja) * | 2014-10-24 | 2020-03-13 | ダウ シリコーンズ コーポレーション | 共形にコーティングされた物品を形成するための真空積層方法及び同方法から形成された関連する共形にコーティングされた物品 |
CN105990496B (zh) * | 2015-03-04 | 2018-11-16 | 光宝光电(常州)有限公司 | Led封装结构及其制造方法 |
DE102015105474A1 (de) * | 2015-04-10 | 2016-10-13 | Osram Opto Semiconductors Gmbh | Konverterbauteil für eine optoelektronische Leuchtvorrichtung |
DE102015109413A1 (de) * | 2015-06-12 | 2016-12-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Konversions-Halbleiterchips und Verbund von Konversions-Halbleiterchips |
JP2017092092A (ja) * | 2015-11-04 | 2017-05-25 | 豊田合成株式会社 | 発光装置の製造方法 |
US20190355783A1 (en) * | 2017-01-25 | 2019-11-21 | Solar Luce Co., Ltd. | Led module |
KR102423549B1 (ko) * | 2017-07-28 | 2022-07-22 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 실리콘 필름 제조 방법, 반도체소자 제조방법 및 반도체소자 |
CN110446383B (zh) * | 2018-05-02 | 2021-03-05 | 毅力科技有限公司 | 在至少一电子模块上形成保护膜的方法 |
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- 2014-05-22 JP JP2016517706A patent/JP6370892B2/ja active Active
- 2014-05-22 EP EP14729728.7A patent/EP3005427B1/en active Active
- 2014-05-22 KR KR1020167000141A patent/KR102227814B1/ko active IP Right Grant
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JP2020150208A (ja) * | 2019-03-15 | 2020-09-17 | 市光工業株式会社 | 発光素子及び車両用灯具、並びに発光素子の製造方法 |
JP7243330B2 (ja) | 2019-03-15 | 2023-03-22 | 市光工業株式会社 | 発光素子及び車両用灯具、並びに発光素子の製造方法 |
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KR20160018662A (ko) | 2016-02-17 |
TW201511356A (zh) | 2015-03-16 |
US20160126429A1 (en) | 2016-05-05 |
EP3005427B1 (en) | 2019-01-16 |
KR102227814B1 (ko) | 2021-03-16 |
WO2014195819A1 (en) | 2014-12-11 |
US9985186B2 (en) | 2018-05-29 |
EP3005427A1 (en) | 2016-04-13 |
JP6370892B2 (ja) | 2018-08-08 |
CN105264675B (zh) | 2019-03-08 |
TWI691100B (zh) | 2020-04-11 |
CN105264675A (zh) | 2016-01-20 |
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