JP2007081399A5 - - Google Patents

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Publication number
JP2007081399A5
JP2007081399A5 JP2006243833A JP2006243833A JP2007081399A5 JP 2007081399 A5 JP2007081399 A5 JP 2007081399A5 JP 2006243833 A JP2006243833 A JP 2006243833A JP 2006243833 A JP2006243833 A JP 2006243833A JP 2007081399 A5 JP2007081399 A5 JP 2007081399A5
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JP
Japan
Prior art keywords
refractory metal
metal layer
semiconductor layers
active region
metal contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006243833A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007081399A (ja
JP5039343B2 (ja
Filing date
Publication date
Priority claimed from US11/223,622 external-priority patent/US7638810B2/en
Application filed filed Critical
Publication of JP2007081399A publication Critical patent/JP2007081399A/ja
Publication of JP2007081399A5 publication Critical patent/JP2007081399A5/ja
Application granted granted Critical
Publication of JP5039343B2 publication Critical patent/JP5039343B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006243833A 2005-09-09 2006-09-08 キャビティ内コンタクトのための高融点金属ＥＬＯＧマスクを備えているＧａＮレーザ Expired - Fee Related JP5039343B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/223,622 US7638810B2 (en) 2005-09-09 2005-09-09 GaN laser with refractory metal ELOG masks for intracavity contact
US11/223622 2005-09-09

Publications (3)

Publication Number Publication Date
JP2007081399A JP2007081399A (ja) 2007-03-29
JP2007081399A5 true JP2007081399A5 (enExample) 2009-10-22
JP5039343B2 JP5039343B2 (ja) 2012-10-03

Family

ID=37854191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006243833A Expired - Fee Related JP5039343B2 (ja) 2005-09-09 2006-09-08 キャビティ内コンタクトのための高融点金属ＥＬＯＧマスクを備えているＧａＮレーザ

Country Status (2)

Country Link
US (1) US7638810B2 (enExample)
JP (1) JP5039343B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007207827A (ja) * 2006-01-31 2007-08-16 Toshiba Corp 半導体レーザ装置
WO2009023046A2 (en) * 2007-05-04 2009-02-19 The Board Of Trustees Of The University Of Illionis Quantum well active region with three dimensional barriers and fabrication
JP5097460B2 (ja) * 2007-06-26 2012-12-12 パナソニック株式会社 化合物半導体素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法
US7915629B2 (en) * 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
JP5047013B2 (ja) * 2008-03-12 2012-10-10 株式会社東芝 半導体発光素子及びその製造方法
US8368118B2 (en) 2008-12-16 2013-02-05 Hewlett-Packard Development Company, L.P. Semiconductor structure having an ELOG on a thermally and electrically conductive mask
US8217410B2 (en) * 2009-03-27 2012-07-10 Wisconsin Alumni Research Foundation Hybrid vertical cavity light emitting sources
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US9653643B2 (en) 2012-04-09 2017-05-16 Cree, Inc. Wafer level packaging of light emitting diodes (LEDs)
US8900899B2 (en) * 2012-07-02 2014-12-02 Payam Rabiei Method for production of optical waveguides and coupling and devices made from the same
US9490119B2 (en) 2014-05-21 2016-11-08 Palo Alto Research Center Incorporated Fabrication of thin-film devices using selective area epitaxy
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
US10205303B1 (en) 2017-10-18 2019-02-12 Lumentum Operations Llc Vertical-cavity surface-emitting laser thin wafer bowing control
DE102023126322A1 (de) * 2023-09-27 2025-03-27 Ams-Osram International Gmbh Oberflächenemitter und Verfahren zum Herstellen von Oberflächenemittern

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3470623B2 (ja) * 1998-11-26 2003-11-25 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法、半導体装置の製造方法および半導体装置
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
JP4595198B2 (ja) * 2000-12-15 2010-12-08 ソニー株式会社 半導体発光素子及び半導体発光素子の製造方法
JP4311610B2 (ja) * 2002-07-26 2009-08-12 株式会社リコー 面発光レーザ

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