JP5039343B2 - キャビティ内コンタクトのための高融点金属ＥＬＯＧマスクを備えているＧａＮレーザ - Google Patents

キャビティ内コンタクトのための高融点金属ＥＬＯＧマスクを備えているＧａＮレーザ Download PDF

Info

Publication number
JP5039343B2
JP5039343B2 JP2006243833A JP2006243833A JP5039343B2 JP 5039343 B2 JP5039343 B2 JP 5039343B2 JP 2006243833 A JP2006243833 A JP 2006243833A JP 2006243833 A JP2006243833 A JP 2006243833A JP 5039343 B2 JP5039343 B2 JP 5039343B2
Authority
JP
Japan
Prior art keywords
refractory metal
metal layer
semiconductor layers
active region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006243833A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007081399A5 (enExample
JP2007081399A (ja
Inventor
デイビッド・ボアー
スコット・ダブリュー・コーザイン
Original Assignee
アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド filed Critical アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド
Publication of JP2007081399A publication Critical patent/JP2007081399A/ja
Publication of JP2007081399A5 publication Critical patent/JP2007081399A5/ja
Application granted granted Critical
Publication of JP5039343B2 publication Critical patent/JP5039343B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2006243833A 2005-09-09 2006-09-08 キャビティ内コンタクトのための高融点金属ＥＬＯＧマスクを備えているＧａＮレーザ Expired - Fee Related JP5039343B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/223,622 US7638810B2 (en) 2005-09-09 2005-09-09 GaN laser with refractory metal ELOG masks for intracavity contact
US11/223622 2005-09-09

Publications (3)

Publication Number Publication Date
JP2007081399A JP2007081399A (ja) 2007-03-29
JP2007081399A5 JP2007081399A5 (enExample) 2009-10-22
JP5039343B2 true JP5039343B2 (ja) 2012-10-03

Family

ID=37854191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006243833A Expired - Fee Related JP5039343B2 (ja) 2005-09-09 2006-09-08 キャビティ内コンタクトのための高融点金属ＥＬＯＧマスクを備えているＧａＮレーザ

Country Status (2)

Country Link
US (1) US7638810B2 (enExample)
JP (1) JP5039343B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007207827A (ja) * 2006-01-31 2007-08-16 Toshiba Corp 半導体レーザ装置
WO2009023046A2 (en) * 2007-05-04 2009-02-19 The Board Of Trustees Of The University Of Illionis Quantum well active region with three dimensional barriers and fabrication
JP5097460B2 (ja) * 2007-06-26 2012-12-12 パナソニック株式会社 化合物半導体素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法
US7915629B2 (en) * 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
JP5047013B2 (ja) * 2008-03-12 2012-10-10 株式会社東芝 半導体発光素子及びその製造方法
US8368118B2 (en) 2008-12-16 2013-02-05 Hewlett-Packard Development Company, L.P. Semiconductor structure having an ELOG on a thermally and electrically conductive mask
US8217410B2 (en) * 2009-03-27 2012-07-10 Wisconsin Alumni Research Foundation Hybrid vertical cavity light emitting sources
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US9653643B2 (en) 2012-04-09 2017-05-16 Cree, Inc. Wafer level packaging of light emitting diodes (LEDs)
US8900899B2 (en) * 2012-07-02 2014-12-02 Payam Rabiei Method for production of optical waveguides and coupling and devices made from the same
US9490119B2 (en) 2014-05-21 2016-11-08 Palo Alto Research Center Incorporated Fabrication of thin-film devices using selective area epitaxy
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
US10205303B1 (en) 2017-10-18 2019-02-12 Lumentum Operations Llc Vertical-cavity surface-emitting laser thin wafer bowing control
DE102023126322A1 (de) * 2023-09-27 2025-03-27 Ams-Osram International Gmbh Oberflächenemitter und Verfahren zum Herstellen von Oberflächenemittern

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3470623B2 (ja) * 1998-11-26 2003-11-25 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法、半導体装置の製造方法および半導体装置
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
JP4595198B2 (ja) * 2000-12-15 2010-12-08 ソニー株式会社 半導体発光素子及び半導体発光素子の製造方法
JP4311610B2 (ja) * 2002-07-26 2009-08-12 株式会社リコー 面発光レーザ

Also Published As

Publication number Publication date
US7638810B2 (en) 2009-12-29
US20070057270A1 (en) 2007-03-15
JP2007081399A (ja) 2007-03-29

Similar Documents

Publication Publication Date Title
JP5039343B2 (ja) キャビティ内コンタクトのための高融点金属ＥＬＯＧマスクを備えているＧａＮレーザ
US11626707B2 (en) Semiconductor laser diode
US7098059B2 (en) Surface emitting semiconductor laser and process for producing the same including forming an insulating layer on the lower reflector
JP5521478B2 (ja) 窒化物半導体発光素子の製造方法及び窒化物半導体発光素子
JP3897186B2 (ja) 化合物半導体レーザ
CN110770985B (zh) 半导体激光二极管
JP4272239B2 (ja) 半導体光素子の製造方法
JP2004289157A (ja) レーザダイオード構造およびその製造方法
JP2002353563A (ja) 半導体発光素子およびその製法
JP2011124442A (ja) 半導体レーザ装置及びその製造方法
JP4928866B2 (ja) 窒化物半導体垂直キャビティ面発光レーザ
JP2012094564A (ja) 半導体レーザ素子およびその製造方法
US7751456B2 (en) Method for manufacturing semiconductor optical device
US20210313760A1 (en) Method for manufacturing semiconductor laser diode and semiconductor laser diode
JP4111696B2 (ja) 窒化物系半導体レーザ素子
JP2018137327A (ja) 窒化物半導体レーザ
JP2010021206A (ja) 半導体発光素子
JP4497606B2 (ja) 半導体レーザ装置
JP7563696B2 (ja) 紫外レーザダイオードの製造方法および紫外レーザダイオード
KR100768402B1 (ko) 반도체 레이저 다이오드의 제조방법
JP2010098001A (ja) 半導体レーザ装置およびその製造方法
JP4024259B2 (ja) 窒化物系半導体発光素子
JP3889772B2 (ja) 窒化物系半導体発光素子
CN116998073A (zh) 半导体激光器
JP2014183111A (ja) 半導体発光素子とその製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090908

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090908

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111108

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120208

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120703

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120709

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150713

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

LAPS Cancellation because of no payment of annual fees