JP5322408B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP5322408B2
JP5322408B2 JP2007185597A JP2007185597A JP5322408B2 JP 5322408 B2 JP5322408 B2 JP 5322408B2 JP 2007185597 A JP2007185597 A JP 2007185597A JP 2007185597 A JP2007185597 A JP 2007185597A JP 5322408 B2 JP5322408 B2 JP 5322408B2
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JP
Japan
Prior art keywords
film
insulating film
region
gate insulating
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007185597A
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English (en)
Japanese (ja)
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JP2009026800A5 (enExample
JP2009026800A (ja
Inventor
豊 岡崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007185597A priority Critical patent/JP5322408B2/ja
Priority to US12/174,252 priority patent/US8012812B2/en
Publication of JP2009026800A publication Critical patent/JP2009026800A/ja
Publication of JP2009026800A5 publication Critical patent/JP2009026800A5/ja
Priority to US13/190,506 priority patent/US8674360B2/en
Application granted granted Critical
Publication of JP5322408B2 publication Critical patent/JP5322408B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2007185597A 2007-07-17 2007-07-17 半導体装置及びその作製方法 Expired - Fee Related JP5322408B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007185597A JP5322408B2 (ja) 2007-07-17 2007-07-17 半導体装置及びその作製方法
US12/174,252 US8012812B2 (en) 2007-07-17 2008-07-16 Semiconductor device and method for manufacturing the same
US13/190,506 US8674360B2 (en) 2007-07-17 2011-07-26 Semiconductor device having first gate electrode and second gate electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007185597A JP5322408B2 (ja) 2007-07-17 2007-07-17 半導体装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013147447A Division JP5657069B2 (ja) 2013-07-16 2013-07-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2009026800A JP2009026800A (ja) 2009-02-05
JP2009026800A5 JP2009026800A5 (enExample) 2010-08-05
JP5322408B2 true JP5322408B2 (ja) 2013-10-23

Family

ID=40264103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007185597A Expired - Fee Related JP5322408B2 (ja) 2007-07-17 2007-07-17 半導体装置及びその作製方法

Country Status (2)

Country Link
US (2) US8012812B2 (enExample)
JP (1) JP5322408B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5487625B2 (ja) * 2009-01-22 2014-05-07 ソニー株式会社 半導体装置
FR2970811B1 (fr) * 2011-01-24 2013-01-25 Commissariat Energie Atomique Dispositif a effet de champ muni d'une contre-électrode amincie et procédé de réalisation
CN103930268B (zh) 2011-10-28 2016-08-31 康宁股份有限公司 具有红外反射性的玻璃制品及其制造方法
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
US8890247B2 (en) * 2012-10-15 2014-11-18 International Business Machines Corporation Extremely thin semiconductor-on-insulator with back gate contact
KR102091485B1 (ko) * 2013-12-30 2020-03-20 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그의 구동 방법
KR102368997B1 (ko) 2014-06-27 2022-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 모듈, 전자 기기, 발광 장치의 제작 방법
WO2016176096A1 (en) 2015-04-30 2016-11-03 Corning Incorporated Electrically conductive articles with discrete metallic silver layers and methods for making same
KR102397799B1 (ko) * 2015-06-30 2022-05-16 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 포함하는 표시장치
US9780210B1 (en) * 2016-08-11 2017-10-03 Qualcomm Incorporated Backside semiconductor growth
WO2020059027A1 (ja) * 2018-09-18 2020-03-26 シャープ株式会社 表示装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3209600B2 (ja) * 1992-12-24 2001-09-17 キヤノン株式会社 薄膜トランジスタの製造方法
JP3253808B2 (ja) 1994-07-07 2002-02-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH09116036A (ja) * 1995-10-23 1997-05-02 Oki Electric Ind Co Ltd 不揮発性メモリセルトランジスタ
JP2877103B2 (ja) * 1996-10-21 1999-03-31 日本電気株式会社 不揮発性半導体記憶装置およびその製造方法
JP2001051292A (ja) 1998-06-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置および半導体表示装置
JP2001028354A (ja) * 1999-05-12 2001-01-30 Sony Corp 半導体装置の製造方法
US6562723B1 (en) * 1999-10-29 2003-05-13 Advanced Micro Devices, Inc. Hybrid stack method for patterning source/drain areas
US7189997B2 (en) 2001-03-27 2007-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6906344B2 (en) 2001-05-24 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with plural channels and corresponding plural overlapping electrodes
US8415208B2 (en) * 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US6952023B2 (en) 2001-07-17 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP3761168B2 (ja) * 2002-09-30 2006-03-29 株式会社東芝 薄膜トランジスタ及びその製造方法
AU2003289448A1 (en) 2003-01-08 2004-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its fabricating method
JP2004343018A (ja) * 2003-03-20 2004-12-02 Fujitsu Ltd 半導体装置及びその製造方法
US7307317B2 (en) 2003-04-04 2007-12-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, CPU, image processing circuit and electronic device, and driving method of semiconductor device
JP2005079283A (ja) 2003-08-29 2005-03-24 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、並びに電子機器
JP4554180B2 (ja) 2003-09-17 2010-09-29 ソニー株式会社 薄膜半導体デバイスの製造方法
JP4554344B2 (ja) * 2003-12-02 2010-09-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7575965B2 (en) * 2003-12-02 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Method for forming large area display wiring by droplet discharge, and method for manufacturing electronic device and semiconductor device
US7452786B2 (en) 2004-06-29 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
JP4130186B2 (ja) 2004-11-12 2008-08-06 三洋電機株式会社 パック電池
US7736964B2 (en) 2004-11-22 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method for manufacturing the same
US7482248B2 (en) 2004-12-03 2009-01-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
US20090020761A1 (en) 2009-01-22
US20110278573A1 (en) 2011-11-17
US8012812B2 (en) 2011-09-06
US8674360B2 (en) 2014-03-18
JP2009026800A (ja) 2009-02-05

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