JP5314870B2 - 薄膜トランジスタの作製方法 - Google Patents

薄膜トランジスタの作製方法 Download PDF

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Publication number
JP5314870B2
JP5314870B2 JP2007245488A JP2007245488A JP5314870B2 JP 5314870 B2 JP5314870 B2 JP 5314870B2 JP 2007245488 A JP2007245488 A JP 2007245488A JP 2007245488 A JP2007245488 A JP 2007245488A JP 5314870 B2 JP5314870 B2 JP 5314870B2
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film
semiconductor film
microcrystalline semiconductor
thin film
film transistor
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JP2007245488A
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JP2009076753A5 (enExample
JP2009076753A (ja
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2007245488A 2007-09-21 2007-09-21 薄膜トランジスタの作製方法 Expired - Fee Related JP5314870B2 (ja)

Priority Applications (1)

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JP2007245488A JP5314870B2 (ja) 2007-09-21 2007-09-21 薄膜トランジスタの作製方法

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JP2007245488A JP5314870B2 (ja) 2007-09-21 2007-09-21 薄膜トランジスタの作製方法

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JP2009076753A JP2009076753A (ja) 2009-04-09
JP2009076753A5 JP2009076753A5 (enExample) 2010-10-14
JP5314870B2 true JP5314870B2 (ja) 2013-10-16

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JP2007245488A Expired - Fee Related JP5314870B2 (ja) 2007-09-21 2007-09-21 薄膜トランジスタの作製方法

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8258025B2 (en) 2009-08-07 2012-09-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and thin film transistor
US9177761B2 (en) 2009-08-25 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD apparatus, method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
KR102479269B1 (ko) * 2010-01-20 2022-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 휴대 전화기
JP5933188B2 (ja) 2010-05-14 2016-06-08 株式会社半導体エネルギー研究所 微結晶シリコン膜及びその作製方法、並びに半導体装置
JP5785770B2 (ja) 2010-05-14 2015-09-30 株式会社半導体エネルギー研究所 微結晶半導体膜の作製方法、及び半導体装置の作製方法
US8778745B2 (en) 2010-06-29 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8916425B2 (en) * 2010-07-26 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
CN102386072B (zh) 2010-08-25 2016-05-04 株式会社半导体能源研究所 微晶半导体膜的制造方法及半导体装置的制造方法
JP2012089708A (ja) 2010-10-20 2012-05-10 Semiconductor Energy Lab Co Ltd 微結晶シリコン膜の作製方法、半導体装置の作製方法
US8450158B2 (en) 2010-11-04 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
US8394685B2 (en) * 2010-12-06 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Etching method and manufacturing method of thin film transistor
US9048327B2 (en) * 2011-01-25 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299235A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd 半導体薄膜形成方法及び薄膜半導体装置
JP2002299238A (ja) * 2001-04-04 2002-10-11 Sony Corp 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法
JP4214250B2 (ja) * 2004-02-20 2009-01-28 農工大ティー・エル・オー株式会社 シリコンナノ結晶構造体の作製方法及び作製装置
TWI234288B (en) * 2004-07-27 2005-06-11 Au Optronics Corp Method for fabricating a thin film transistor and related circuits
JP4925580B2 (ja) * 2004-12-28 2012-04-25 三菱化学株式会社 窒化物半導体発光素子およびその製造方法

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JP2009076753A (ja) 2009-04-09

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