JP5314870B2 - Method for manufacturing thin film transistor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin film transistor with excellent electrical properties, and a manufacturing methods of a display device having the same. <P>SOLUTION: A gate insulating film is formed on a gate electrode. A semiconductor film having a microcrystalline semiconductor and an amorphous semiconductor is formed on the gate insulating film. The amorphous semiconductor of the semiconductor film is selectively eliminated and the microcrystalline semiconductor is left. With the microcrystalline semiconductor as a seed, a microcrystalline semiconductor film is formed by crystal growth using deposition gas containing silicon or germanium to improve crystallinity of an interface of the gate insulating film and the microcrystalline semiconductor film. Then, the thin film transistor is formed by using the microcrystalline semiconductor film with improved crystallinity of the interface with the gate insulating film as a channel forming region. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

The present invention relates to a method for manufacturing a thin film transistor and a method for manufacturing a display device using a thin film transistor at least in a pixel portion.

In recent years, a technique for forming a thin film transistor using a semiconductor thin film (having a thickness of about several to several hundred nm) formed on a substrate having an insulating surface has attracted attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and development of switching devices for image display devices is urgently required.

As a switching element of an image display device, a thin film transistor using an amorphous semiconductor film, a thin film transistor using a polycrystalline semiconductor film, or the like is used. As a method for forming a polycrystalline semiconductor film, a technique is known in which a pulsed excimer laser beam is processed into a linear shape by an optical system, and is crystallized by irradiating the amorphous silicon film while scanning the linear beam. It has been.

As a switching element of an image display device, a thin film transistor using a microcrystalline semiconductor film is used (Patent Documents 1 and 2).
JP-A-4-242724 JP 2005-49832 A

A thin film transistor using a polycrystalline semiconductor film has a mobility that is two orders of magnitude higher than a thin film transistor using an amorphous semiconductor film, and a pixel portion of a semiconductor display device and its peripheral driver circuit can be formed over the same substrate. Has the advantage. However, compared to the case where an amorphous semiconductor film is used, the process is complicated for crystallization of the semiconductor film, so that there is a problem that the yield is reduced and the cost is increased accordingly.

In addition, in an inverted staggered thin film transistor using a microcrystalline semiconductor film, there is a problem in that the crystallinity in the interface region between the gate insulating film and the microcrystalline semiconductor film is low and the electrical characteristics of the thin film transistor are poor.

  In view of the above-described problems, an object of the present invention is to propose an inverted staggered thin film transistor with excellent electrical characteristics and a method for manufacturing a display device including the thin film transistor.

A gate insulating film is formed over the gate electrode, and a film is formed on the gate insulating film using a deposition gas containing silicon or germanium and hydrogen until the microcrystalline semiconductor is deposited, and the formed film is subjected to hydrogen plasma treatment. Then, a fluorine plasma treatment or a rare gas plasma treatment is performed to leave a microcrystalline semiconductor on the gate insulating film, and the microcrystalline semiconductor is used as a seed, and a crystal is grown using a deposition gas containing silicon or germanium, and hydrogen. A crystalline semiconductor film is formed, and a thin film transistor is manufactured using the microcrystalline semiconductor film.

A gate insulating film is formed over the gate electrode, and the microcrystalline semiconductor is gate-insulated on the gate insulating film using a deposition gas containing silicon or germanium, a gas containing hydrogen and / or fluorine, and / or a rare gas. A microcrystalline semiconductor film is formed by growing a crystal using a deposition gas containing silicon or germanium and hydrogen, using the microcrystalline semiconductor as a seed, and forming a thin film transistor using the microcrystalline semiconductor film. It is characterized by doing.

A gate insulating film is formed over the gate electrode, a semiconductor film including a microcrystalline semiconductor and an amorphous semiconductor is formed over the gate insulating film, and the amorphous semiconductor in the semiconductor film is selectively removed to remove the microcrystalline semiconductor. A microcrystalline semiconductor film is formed by remaining and growing a crystal using the microcrystalline semiconductor as a seed, and crystallinity at the interface between the gate insulating film and the microcrystalline semiconductor film is increased. Next, a thin film transistor is formed using a microcrystalline semiconductor film with improved crystallinity at the interface with the gate insulating film as a channel formation region.

A microcrystalline semiconductor is formed by selectively removing an amorphous semiconductor in a semiconductor film while forming a gate insulating film over the gate electrode and forming a semiconductor film including a microcrystalline semiconductor and an amorphous semiconductor over the gate insulating film. The crystal is grown using the microcrystalline semiconductor as a seed to form a microcrystalline semiconductor film, and the crystallinity at the interface between the gate insulating film and the microcrystalline semiconductor film is increased. Next, a thin film transistor is formed using a microcrystalline semiconductor film with improved crystallinity at the interface with the gate insulating film as a channel formation region.

In addition, a buffer layer is continuously formed over the microcrystalline semiconductor film with increased crystallinity at the interface with the gate insulating film, and a source region and a drain region, and a source wiring and a drain wiring are formed over the buffer layer. Thus, a thin film transistor is formed.

In addition, a display device is manufactured by forming a pixel electrode connected to the thin film transistor.

As a method for selectively removing an amorphous semiconductor from a semiconductor film including a microcrystalline semiconductor and an amorphous semiconductor, plasma for irradiating the semiconductor film with a rare gas plasma such as hydrogen plasma, fluorine plasma, helium, neon, or argon is used. There is processing. Compared with a microcrystalline semiconductor, an amorphous semiconductor is easily etched by the plasma treatment, and thus the microcrystalline semiconductor can be left by the plasma treatment. By a chemical vapor phase reaction using a deposition gas containing silicon or germanium, the microcrystalline semiconductor can be crystal-grown using the microcrystalline semiconductor as a crystal nucleus (a seed of crystal growth). As a result, a microcrystalline semiconductor film with reduced amorphous semiconductor content can be formed. Note that the deposition gas containing silicon or germanium includes SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ , GeH ₄ , Ge ₂ H _{6, and} Ge ₃ H ₈ .

Note that in this specification, a microcrystalline semiconductor refers to a state in which crystal grains are formed and is not a film, and a microcrystalline semiconductor film is a state in which microcrystalline semiconductors are in contact with each other to form a film. I mean. Note that the microcrystalline semiconductor film includes a case where a small amount of an amorphous semiconductor is included between a plurality of microcrystalline semiconductors. An amorphous semiconductor refers to a state in which an amorphous semiconductor is not formed as a single film so as to fill a space between microcrystalline semiconductors, for example. It is a film formed by

In addition, a thin film transistor (TFT) is manufactured using the microcrystalline semiconductor film of the present invention, and a display device is manufactured using the thin film transistor in a pixel portion and further in a driver circuit. Since the microcrystalline semiconductor film of the present invention has high crystallinity at the interface with the gate insulating film, a thin film transistor using the microcrystalline semiconductor film has an amorphous mobility of 1 to 40 cm ² / V · sec. Since the mobility is 2 to 40 times that of a thin film transistor using a semiconductor film, part or all of the driver circuit can be formed over the same substrate as the pixel portion to form a system-on-panel. .

The display device includes a light emitting device and a liquid crystal display device. The light emitting device includes a light emitting element, and the liquid crystal display device includes a liquid crystal element. The light-emitting element includes, in its category, an element whose luminance is controlled by current or voltage, and specifically includes organic EL (electroluminescence) and inorganic EL.

  The display device includes a panel in which the display element is sealed, and a module in which an IC including a controller is mounted on the panel. Further, one aspect of the present invention relates to an element substrate corresponding to one mode before the display element is completed in the process of manufacturing the display device, and the element substrate includes a plurality of means for supplying current to the display element. Provide for each pixel. Specifically, the element substrate may be in a state where only the pixel electrode of the display element is formed, or after the conductive film to be the pixel electrode is formed, the pixel electrode is formed by etching. The previous state may be used, and all forms are applicable.

Note that a display device in this specification means an image display device, a light-emitting device, or a light source (including a lighting device). Also, a connector, for example, a module with a FPC (Flexible printed circuit) or TAB (Tape Automated Bonding) tape or TCP (Tape Carrier Package), a module with a printed wiring board at the end of a TAB tape or TCP, or a display It is assumed that the display device includes all modules in which an IC (integrated circuit) is directly mounted on the element by a COG (Chip On Glass) method.

According to the present invention, a thin film transistor with excellent electrical characteristics can be manufactured by forming a microcrystalline semiconductor film with high crystallinity from an interface with an insulating film and using the microcrystalline semiconductor film for a channel formation region. In addition, a display device including the device can be manufactured.

When the channel formation region is formed using a microcrystalline semiconductor film, variation in threshold voltage is suppressed, field-effect mobility is improved, and a subthreshold coefficient (S value) is reduced. Performance can be improved. As a result, the drive frequency of the display device can be increased, and it is possible to sufficiently cope with an increase in panel size and an increase in pixel density.

Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. In the structure of the present invention described below, the same reference numerals are used in common in different drawings. In addition, arrangement | positioning of each apparatus in the production system shown by the following embodiment shows an example, and if it is arrangement | positioning which has the same effect, it should not be limitedly interpreted to what is illustrated.

(Embodiment 1)
In this embodiment, a manufacturing process of a thin film transistor will be described with reference to FIGS. 1, 3, 5, 7, 8, 12, 13, 15, 17, and 18 are cross-sectional views illustrating a manufacturing process of a thin film transistor, and FIGS. 14 and 19 are connection regions of a thin film transistor and a pixel electrode in one pixel. FIG.

A thin film transistor including a microcrystalline semiconductor film is more suitable for use in a driver circuit because the n-type has higher mobility than the p-type. In order to reduce the number of steps, it is desirable that all thin film transistors formed over the same substrate have the same polarity. Here, description is made using an n-channel thin film transistor.

As shown in FIG. 1A, a gate electrode 51 is formed over a substrate 50, and gate insulating films 52 a and 52 b are formed over the gate electrode 51.

The substrate 50 is a heat-resistant material that can withstand the processing temperature in this manufacturing process, in addition to a non-alkali glass substrate manufactured by a fusion method or a float method, such as barium borosilicate glass, aluminoborosilicate glass, or aluminosilicate glass, or a ceramic substrate. A plastic substrate or the like having the above can be used. Alternatively, a substrate in which an insulating film is provided on the surface of a metal substrate such as a stainless alloy may be used.

The gate electrode 51 is formed of a metal material. As the metal material, aluminum, chromium, titanium, tantalum, molybdenum, copper, or the like is applied. A preferred example of the gate electrode 51 is formed of aluminum or a laminated structure of aluminum and a barrier metal. As the barrier metal, a refractory metal such as titanium, molybdenum, or chromium is used. The barrier metal is preferably provided to prevent hillocks and oxidation of aluminum. Here, a molybdenum film is formed as a conductive film over the substrate 50 by a sputtering method, and the conductive film formed over the substrate 50 is etched using a resist mask formed using a first photomask to form a gate electrode. Form.

The gate electrode 51 is formed with a thickness of 50 nm to 300 nm. By setting the thickness of the gate electrode 51 to 50 nm or more and 100 nm or less, it is possible to prevent disconnection of a semiconductor film or a wiring to be formed later. In addition, by setting the thickness of the gate electrode 51 to 150 nm or more and 300 nm or less, the resistance of the gate electrode 51 can be reduced, and the area can be increased.

  Note that since a semiconductor film or a wiring is formed over the gate electrode 51, it is desirable that the end portion be tapered so as to prevent disconnection. Although not shown, a wiring connected to the gate electrode and a capacitor wiring can be formed at the same time in this step.

Each of the gate insulating films 52a and 52b can be formed using a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film by a CVD method, a sputtering method, or the like. Here, a mode in which a silicon nitride film or a silicon nitride oxide film is formed as the gate insulating film 52a and a silicon oxide film or a silicon oxynitride film is formed and stacked as the gate insulating film 52b is shown. Note that the gate insulating film is not formed in two layers, and the gate insulating film can be formed using a single layer of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film.

In addition, the gate insulating film is formed of a three-layer insulating film, a silicon nitride film or a silicon nitride oxide film is formed over the gate electrode, a silicon oxide film or a silicon oxynitride film is formed thereon, and In addition, a silicon nitride film or a silicon nitride oxide film having a thickness of about 1 nm to 5 nm can be formed.

As a method for forming a silicon nitride film having a thickness of about 1 nm to 5 nm, the gate insulating film 52b is nitrided using high-density plasma to form a silicon nitride layer on the surface of the gate insulating film 52b. Can do. It is also possible to obtain a silicon nitride layer containing a higher concentration of nitrogen by performing high density plasma nitridation. The high density plasma is generated by using a high frequency microwave, for example 2.45 GHz. Since high-density plasma characterized by low electron temperature has low kinetic energy of active species, it is possible to form a layer with less plasma damage and fewer defects than conventional plasma treatment. Further, since the surface roughness of the gate insulating film 52b can be reduced, carrier mobility can be increased.

By forming the gate insulating film 52a using a silicon nitride film or a silicon nitride oxide film, the adhesion between the substrate 50 and the gate insulating film 52a is increased. When a glass substrate is used as the substrate 50, impurities from the substrate 50 Can be prevented from diffusing into the microcrystalline semiconductor film, and the gate electrode 51 can be prevented from being oxidized. That is, film peeling can be prevented and electrical characteristics of a thin film transistor to be formed later can be improved. Further, it is preferable that each of the gate insulating films 52a and 52b has a thickness of 50 nm or more because reduction in coverage due to the unevenness of the gate electrode 51 can be reduced.

Here, the silicon oxynitride film has a composition that contains more oxygen than nitrogen and has a concentration range of 55 to 65 atomic%, 1 to 20 atomic%, and 25 Si. -35 atomic%, and hydrogen is contained in the range of 0.1-10 atomic%. The silicon nitride oxide film has a composition containing more nitrogen than oxygen, and the concentration ranges of oxygen are 15 to 30 atomic%, nitrogen is 20 to 35 atomic%, and Si is 25 to 25%. 35 atomic% and hydrogen are included in the range of 15 to 25 atomic%.

  Next, a semiconductor film 57 containing a microcrystalline semiconductor and an amorphous semiconductor is formed over the gate insulating film 52b by a plasma CVD method using a deposition gas containing silicon or germanium and hydrogen. When the semiconductor film is formed by increasing the flow rate of hydrogen with respect to the deposition gas, an amorphous semiconductor film is formed at the interface with the gate insulating film 52b. A microcrystalline semiconductor is formed.

The thickness of the semiconductor film 57 may be any thickness that includes a microcrystalline semiconductor. For this reason, it is formed with a thickness of 10 to 5 nm, preferably 20 to 30 nm.

  Next, the semiconductor film 57 containing a microcrystalline semiconductor and an amorphous semiconductor is subjected to plasma treatment with a rare gas plasma such as hydrogen plasma, fluorine plasma, helium, neon, argon, krypton, or xenon, and an amorphous semiconductor is selected. Etching is performed to leave the microcrystalline semiconductor 58 as shown in FIG. Since an amorphous semiconductor has a higher etching rate than a microcrystalline semiconductor, it is etched by plasma treatment such as hydrogen plasma, fluorine plasma, or rare gas plasma. For this reason, the microcrystalline semiconductor 58 can remain.

Next, the microcrystalline semiconductor 58 is crystal-grown as a crystal nucleus to form a microcrystalline semiconductor film 53 as illustrated in FIG.

The microcrystalline semiconductor film here is a film including a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal). This semiconductor is a semiconductor having a third state which is stable in terms of free energy, and is a crystalline one having a short-range order and having a lattice strain, and has a columnar or needle shape with a particle size of 0.5 to 20 nm. Crystals grow in the normal direction with respect to the substrate surface. In addition, a non-single-crystal semiconductor exists between the plurality of microcrystalline semiconductors. Microcrystalline silicon which is a typical example of a microcrystalline semiconductor has its Raman spectrum shifted to a lower frequency side than 520.5 cm ⁻¹ indicating single crystal silicon. That is, the peak of the Raman spectrum of microcrystalline silicon is between 520.5 cm ⁻¹ representing single crystal silicon and 480 cm ⁻¹ representing amorphous silicon. In addition, at least 1 atomic% or more of hydrogen or halogen is contained to terminate dangling bonds (dangling bonds). Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability can be improved and a good microcrystalline semiconductor film can be obtained. A description of such a microcrystalline semiconductor film is disclosed in, for example, US Pat. No. 4,409,134.

The microcrystalline semiconductor film 53 is formed to be 1 nm to 200 nm thick, preferably 1 nm to 100 nm, preferably 1 nm to 50 nm. The microcrystalline semiconductor film 53 functions as a channel formation region of a thin film transistor to be formed later. Further, the microcrystalline semiconductor film 53 may be etched to reduce the thickness of the microcrystalline semiconductor film 53. By setting the thickness of the microcrystalline semiconductor film 53 to 1 nm to 50 nm, a fully depleted thin film transistor can be manufactured.

In addition, since the microcrystalline semiconductor film exhibits weak n-type conductivity when an impurity element for the purpose of controlling valence electrons is not intentionally added, the microcrystalline semiconductor film functions as a channel formation region of a thin film transistor. Thus, the threshold value can be controlled by adding an impurity element imparting p-type at the same time as film formation or after film formation. The impurity element imparting p-type is typically boron, and an impurity gas such as B ₂ H ₆ or BF ₃ may be mixed into silicon hydride at a rate of 1 ppm to 1000 ppm, preferably 1 to 100 ppm. . The boron concentration is preferably 1 × 10 ^{14 to} 6 × 10 ¹⁶ atoms / cm ³ , for example.

In addition, the oxygen concentration of the microcrystalline semiconductor film is 5 × 10 ¹⁹ atoms / cm ³ or less, more preferably 1 × 10 ¹⁹ atoms / cm ³ or less, and the nitrogen and carbon concentrations are 3 × 10 ¹⁸ atoms / cm ³ or less. It is preferable that By reducing the concentration of oxygen, nitrogen, and carbon in the microcrystalline semiconductor film, the microcrystalline semiconductor film can be prevented from becoming n-type.

A process for forming a microcrystalline silicon film as a typical example as a method for forming a microcrystalline semiconductor film with high crystallinity at the interface with the gate insulating film will be described below in time series with reference to FIGS. . Further, crystal nucleus formation processing and film formation processing will be described in detail with reference to FIGS. 3 and 4 which are enlarged cross-sectional views of an interface between the gate insulating film and the microcrystalline semiconductor film.

FIG. 2 is a time chart illustrating a process for forming a microcrystalline semiconductor film, and shows a typical example. The description of FIG. 2 is shown from the stage of evacuating the reaction chamber from atmospheric pressure 440. Subsequent substrate loading 441, base pretreatment 442, semiconductor film formation processing 443, amorphous semiconductor etching processing 444, crystal Each process of the growth process 445, the substrate carry-out 446, and the cleaning 447 is shown in time series.

First, the reaction chamber is evacuated to a predetermined degree of vacuum. In the case of high vacuum evacuation, evacuation by a turbo molecular pump or the like is performed, and the vacuum is evacuated to a pressure lower than 10 ⁻¹ Pa as a degree of vacuum. Further, the pressure in the reaction chamber may be set to an ultrahigh vacuum lower than 10 ⁻⁵ Pa by evacuation by a cryopump. Further, it is preferable to perform a degassing treatment from the inner wall by heat-treating the reaction chamber. In addition, the heater for heating the substrate is also operated to stabilize the temperature. The heating temperature of the substrate is 100 ° C to 300 ° C, preferably 120 ° C to 220 ° C.

In substrate loading 441, a substrate is loaded into the reaction chamber from a load lock chamber connected to the reaction chamber. At this time, the pressure in the reaction chamber is the same as that in the load lock chamber.

The base pretreatment 442 is performed to remove gas (atmospheric components such as oxygen and nitrogen, or etching gas used for cleaning the reaction chamber) adsorbed on the inner wall of the reaction chamber, such as hydrogen, argon, krypton, and xenon. It is preferable to perform a plasma treatment by introducing a rare gas. Use of a rare gas element plasma such as argon, krypton, or xenon having a large mass number is preferable because oxygen, moisture, organic matter, metal elements, and the like attached to the surface are removed by sputtering. The plasma treatment using hydrogen is effective in removing the impurities adsorbed on the surface by hydrogen radicals and forming a clean surface by etching action on the insulating film. Note that the pressure in the reaction chamber at this time is a set pressure because gas is introduced into the reaction chamber.

In the semiconductor film formation treatment 443, hydrogen and a deposition gas containing silicon or germanium, here, silane are mixed in a reaction chamber, and a semiconductor film including a microcrystalline semiconductor and an amorphous semiconductor is formed by glow discharge plasma. . As shown in FIG. 3A, the amorphous semiconductor 59 is formed in the initial stage of the semiconductor film deposition due to factors such as impurities and lattice mismatch. A microcrystalline semiconductor 58 is formed therebetween.

An amorphous semiconductor etching process 444 shown in FIG. 2 is a process performed subsequent to the semiconductor film formation process 443. The flow of the deposition gas containing silicon or germanium into the reaction chamber is stopped, and a gas containing hydrogen and / or fluorine and / or a rare gas is mixed to generate plasma. Compared with a microcrystalline semiconductor, an amorphous semiconductor is easily etched because it is easily etched by hydrogen radicals, fluorine radicals, and rare gas radicals. Therefore, as illustrated in FIG. 3B, the microcrystalline semiconductor 58 can remain over the gate insulating film 52b.

As the gas containing fluorine, fluorine, bromine fluoride, iodine fluoride, fluorides such as hydrogen, silicon, and germanium can be used. In fluorine plasma, fluorine radicals are generated. Note that in the amorphous semiconductor etching process 444, it is preferable not to use a rare gas element having a large mass number, typically krypton, xenon, or the like as the rare gas. This is because a rare gas element radical having a large mass number may etch not only an amorphous semiconductor but also a microcrystalline semiconductor.

The crystal growth process 445 shown in FIG. 2 is a process performed subsequent to the amorphous semiconductor etching process 444. A microcrystalline semiconductor film is formed by glow discharge plasma by mixing silane gas and hydrogen and / or a rare gas. Silane is diluted 10 to 2000 times with hydrogen and / or a noble gas. Therefore, a large amount of hydrogen and / or a rare gas is required. The heating temperature of the substrate is 100 ° C to 300 ° C, preferably 120 ° C to 220 ° C. In order to inactivate the growth surface of the microcrystalline silicon film with hydrogen and promote the growth of the microcrystalline silicon, the film formation is preferably performed at 120 ° C. to 220 ° C. In the crystal growth treatment 445, SiH radicals, SiH ₂ radicals, and SiH ₃ radicals that are active species are bonded to the microcrystalline semiconductor 58 to grow crystals. As a result, the microcrystalline semiconductor film 53 can be formed. At this time, since the microcrystalline semiconductor grows vertically using the microcrystalline semiconductor 58 as a seed for crystal growth, a crystal grows in the normal direction to the gate insulating film 52b, and as shown in FIG. A microcrystalline semiconductor film 53 in which the microcrystalline semiconductors 53a are arranged can be formed. That is, a microcrystalline semiconductor film can be formed over the gate insulating film without forming an amorphous layer at the interface.

Further, germanium hydride and germanium fluoride such as GeH ₄ and GeF ₄ are mixed in a gas such as silane, and the energy bandwidth is adjusted to 1.5 to 2.4 eV or 0.9 to 1.1 eV. May be. When germanium is added to silicon, the temperature characteristics of the thin film transistor can be changed.

In the conventional method for forming a microcrystalline semiconductor film, an amorphous semiconductor 59 is formed at the initial deposition stage due to factors such as impurities and lattice mismatch as shown in FIG. In an inverted staggered thin film transistor, carriers flow in the microcrystalline semiconductor film in the vicinity of the gate insulating film. Therefore, when the amorphous semiconductor 59 is formed at the interface, mobility is reduced and the amount of current is small. As a result, the electrical characteristics of the battery deteriorate.

However, as shown in this embodiment, the semiconductor film formation process, the amorphous semiconductor etching process, and the crystal growth process cause the microcrystalline semiconductor to grow vertically using the microcrystalline semiconductor 58 as a seed. The crystallinity in the vertical direction can be increased, and the crystallinity of the interface between the gate insulating film and the microcrystalline semiconductor film can be increased.

1 to 4, the process for forming the semiconductor film and the etching process for the amorphous semiconductor in the semiconductor film are separated, but they may be performed simultaneously. The form is shown below.

A semiconductor film containing a microcrystalline semiconductor and an amorphous semiconductor over the gate insulating film 52b by a plasma CVD method in which a deposition gas containing silicon or germanium, a gas containing hydrogen and / or fluorine, and / or a rare gas is mixed. As shown in FIG. 5A, a plasma treatment is performed with hydrogen plasma, fluorine plasma, rare gas plasma, or the like while the amorphous semiconductor is selectively etched. The crystal semiconductor 58 is left. Compared to microcrystalline semiconductors, amorphous semiconductors are more easily etched by hydrogen radicals, fluorine radicals, and rare gas radicals, so even if an amorphous semiconductor is formed on the gate insulating film, hydrogen radicals and fluorine radicals are immediately formed. Etching with noble gas radicals. Therefore, the microcrystalline semiconductor 58 can remain on the gate insulating film 52b.

As the gas containing fluorine, fluorine, bromine fluoride, iodine fluoride, fluorides such as hydrogen, silicon, and germanium can be used. In fluorine plasma, fluorine radicals are generated. Note that in the amorphous semiconductor etching process 444, it is preferable not to use a rare gas element having a large mass number, typically krypton, xenon, or the like as the rare gas. This is because a rare gas element radical having a large mass number may etch not only an amorphous semiconductor but also a microcrystalline semiconductor.

Next, the microcrystalline semiconductor 58 is grown as a crystal nucleus to form a microcrystalline semiconductor film 53 as illustrated in FIG.

Hereinafter, as a method for forming a microcrystalline semiconductor film, a step of forming a microcrystalline silicon film as a typical example will be described in time series with reference to FIGS. In addition, a crystal nucleus forming process and a film forming process will be described in detail with reference to FIG. 7 which is an enlarged cross-sectional view of an interface between the gate insulating film and the microcrystalline semiconductor film.

FIG. 6 is a time chart illustrating a process for forming a microcrystalline semiconductor film, and shows a typical example. The description of FIG. 6 is shown from the stage of evacuating the reaction chamber from atmospheric pressure 440. Subsequent substrate carry-in 441, base pretreatment 442, crystal nucleation treatment 448, crystal growth treatment 445, substrate carry-out 446, Each process of the cleaning 447 is shown in time series. Note that the vacuum evacuation 440, the substrate carry-in 441, the base pretreatment 442, the crystal growth treatment 445, the substrate carry-out 446, and the cleaning 447 are the same as the steps shown in FIG. 2, and between the base pretreatment 442 and the crystal growth treatment 445. The crystal nucleation process 448 enters.

The crystal growth process 445 is a process performed subsequent to the base pretreatment 442 for forming the microcrystalline silicon film. First, hydrogen and a deposition gas containing silicon or germanium, here, silane are mixed, and a semiconductor film including a microcrystalline semiconductor and an amorphous semiconductor is formed by glow discharge plasma. At this time, the flow rate of hydrogen with respect to silane is reduced more than the crystal growth treatment 445. Alternatively, a gas containing fluorine and / or a rare gas is mixed with the deposition gas to generate plasma. As a result, among the semiconductor films once formed on the gate insulating film 52b, the amorphous semiconductor is selectively etched. Therefore, as illustrated in FIG. 7A, the microcrystalline semiconductor 58 can remain on the gate insulating film 52b.

Next, as in FIG. 2, a crystal growth process 445 causes crystals to grow in the normal direction to the gate insulating film 52b, and columnar microcrystalline semiconductors 53a are arranged as illustrated in FIG. 7B. A microcrystalline semiconductor film 53 can be formed. That is, a microcrystalline semiconductor film can be formed over the gate insulating film without forming an amorphous layer at the interface.

As shown in this embodiment, plasma is generated by applying high frequency power of 1 MHz to 20 MHz, typically 13.56 MHz, or high frequency power of VHF band from 20 MHz to about 120 MHz.

Note that by pre-coating a semiconductor film in the reaction chamber of the plasma CVD apparatus before the substrate carry-in 441, the metal constituting the reaction chamber can be prevented from being taken into the microcrystalline silicon film as an impurity. That is, by coating the reaction chamber with silicon, the reaction chamber can be prevented from being etched by plasma, and the concentration of impurities contained in the microcrystalline silicon film can be reduced.

In the crystal growth treatment 445, helium may be added to the reaction gas in addition to silane and hydrogen. Helium has the highest ionization energy of all gases at 24.5 eV, and there is a metastable state at a level of about 20 eV, which is slightly lower than the ionization energy. Only about 4 eV is required. Therefore, the discharge start voltage also shows the lowest value among all gases. From such characteristics, helium can maintain the plasma stably. In addition, since uniform plasma can be formed, the plasma density can be made uniform even when the area of the substrate on which the microcrystalline silicon film is deposited is increased.

After the formation of the microcrystalline silicon film is finished, the supply of the reactive gas such as silane and hydrogen and the high-frequency power is stopped, and the substrate unloading 446 is performed. When the film formation process is subsequently performed on another substrate, the process returns to the substrate carry-in 441 and the same process is performed. Cleaning 447 is performed in order to remove the film and powder attached to the reaction chamber.

The cleaning 447 performs plasma etching by introducing an etching gas typified by NF ₃ and SF ₆ . Further, the etching is performed by introducing a gas such as ClF ₃ that can be etched without using plasma. The cleaning 447 is preferably performed by turning off the heater for heating the substrate and lowering the temperature. This is to suppress generation of reaction by-products due to etching. After completion of the cleaning 447, the process returns to the substrate carry-in 441, and the same processing is performed thereafter.

Since the microcrystalline semiconductor film 53 is formed using a microcrystalline semiconductor, its resistance is lower than that of an amorphous semiconductor film. Therefore, in the thin film transistor using the microcrystalline semiconductor film 53, the slope of the rising portion of the curve indicating the current-voltage characteristics is steep, so that the response as a switching element is excellent and high-speed operation is possible. In addition, by using the microcrystalline semiconductor film 53 in a channel formation region of the thin film transistor, variation in threshold value of the thin film transistor can be suppressed. Therefore, a display device with little variation in electrical characteristics can be manufactured.

In addition, the microcrystalline semiconductor film formed in this embodiment has high crystallinity at the interface with the gate insulating film. Thus, a thin film transistor using the microcrystalline semiconductor film 53 has higher mobility than a thin film transistor using an amorphous semiconductor film or a conventional microcrystalline semiconductor film. Therefore, the area of the channel formation region, that is, the area of the thin film transistor can be reduced by using a thin film transistor in which the channel formation region is formed using the microcrystalline semiconductor film 53 for switching the display element. Therefore, the area of the thin film transistor shown per pixel is reduced, and the aperture ratio of the pixel can be increased. As a result, a display device with high resolution can be manufactured.

Next, as illustrated in FIG. 1D, a buffer layer 54 and a semiconductor film 55 to which an impurity imparting one conductivity type is added are formed over the microcrystalline semiconductor film 53. Next, a resist mask 56 is formed over the semiconductor film 55 to which an impurity imparting one conductivity type is added.

As the buffer layer 54, an amorphous semiconductor film can be formed by a plasma CVD method using a deposition gas containing silicon or germanium. Alternatively, an amorphous semiconductor film can be formed by diluting a deposition gas containing silicon or germanium with one or more kinds of rare gas elements selected from helium, argon, krypton, and neon. An amorphous semiconductor film containing hydrogen can be formed using hydrogen at a flow rate of 1 to 10 times, more preferably 1 to 5 times the flow rate of silane gas. Further, halogen such as fluorine, chlorine, bromine, or iodine, or nitrogen may be added to the hydrogenated semiconductor film.

The buffer layer 54 can be formed using an amorphous semiconductor film by sputtering with hydrogen or a rare gas using a semiconductor target such as silicon or germanium as a target.

The buffer layer 54 is preferably formed using an amorphous semiconductor film that does not include crystal grains. For this reason, when forming by a high frequency plasma CVD method or a microwave plasma CVD method with a frequency of several tens to several hundreds of MHz, the film formation conditions are controlled so that the amorphous semiconductor film does not contain crystal grains. It is preferable to do.

The buffer layer 54 may be partially etched in a later formation process of the source region and the drain region, but it is preferable to form the buffer layer 54 with such a thickness that a part of the buffer layer 54 remains at that time. Typically, it is preferable to form with a thickness of 30 nm to 500 nm, preferably 50 nm to 100 nm. In a display device with a high applied voltage of the thin film transistor (for example, about 15 V), typically a liquid crystal display device, when the buffer layer 54 is formed thick, the withstand voltage increases, and the thin film transistor deteriorates even when a high voltage is applied to the thin film transistor. You can avoid that.

By forming an amorphous semiconductor film and further an amorphous semiconductor film containing hydrogen, nitrogen, or halogen over the surface of the microcrystalline semiconductor film 53, the surface of the crystal grains included in the microcrystalline semiconductor film 53 can be naturally observed. It is possible to prevent oxidation. In particular, in a region where an amorphous semiconductor is in contact with microcrystalline grains, cracks are likely to occur due to local stress. When this crack comes into contact with oxygen, the crystal grains are oxidized and silicon oxide is formed. However, formation of the buffer layer 54 on the surface of the microcrystalline semiconductor film 53 can prevent oxidation of the microcrystalline grains.

In addition, since the buffer layer 54 is formed using an amorphous semiconductor film or an amorphous semiconductor film containing hydrogen, nitrogen, or halogen, the energy gap is larger than that of the microcrystalline semiconductor film 53. In addition, the resistance is high and the mobility is as low as 1/5 to 1/10 that of the microcrystalline semiconductor film 53. Therefore, in a thin film transistor to be formed later, a buffer layer formed between the source and drain regions and the microcrystalline semiconductor film 53 functions as a high resistance region, and the microcrystalline semiconductor film 53 functions as a channel formation region. To do. Therefore, off current of the thin film transistor can be reduced. When the thin film transistor is used as a switching element of a display device, the contrast of the display device can be improved.

Note that after the microcrystalline semiconductor film 53 is formed, the buffer layer 54 is preferably formed at a temperature of 300 ° C. to 400 ° C. by a plasma CVD method. By this deposition treatment, hydrogen is supplied to the microcrystalline semiconductor film 53, and an effect equivalent to that obtained by hydrogenating the microcrystalline semiconductor film 53 is obtained. That is, by depositing the buffer layer 54 over the microcrystalline semiconductor film 53, hydrogen can be diffused into the microcrystalline semiconductor film 53 to terminate dangling bonds.

The semiconductor film 55 to which an impurity imparting one conductivity type is added may be formed by adding phosphorus as a typical impurity element when an n-channel thin film transistor is formed. Impurities such as PH ₃ are added to silicon hydride. Add gas. In the case of forming a p-channel thin film transistor, boron may be added as a typical impurity element, and an impurity gas such as B ₂ H ₆ may be added to silicon hydride. The semiconductor film 55 to which an impurity imparting one conductivity type is added can be formed using a microcrystalline semiconductor film body or an amorphous semiconductor. The semiconductor film 55 to which an impurity imparting one conductivity type is added is formed with a thickness of 2 nm to 50 nm. By reducing the thickness of the semiconductor film to which an impurity imparting one conductivity type is added, throughput can be improved.

Next, an example of a structure suitable for forming a gate insulating film and a microcrystalline semiconductor film is described as an example of a plasma CVD apparatus to which the reaction chamber is applied.

FIG. 10 shows an example of a multi-chamber plasma CVD apparatus having a plurality of reaction chambers. This apparatus includes a common chamber 423, a load / unload chamber 422, a first reaction chamber 400a, a second reaction chamber 400b, and a third reaction chamber 400c. The substrate loaded in the cassette of the load / unload chamber 422 has a single-wafer structure that is carried into and out of each reaction chamber by the transport mechanism 426 of the common chamber 423. A gate valve 425 is provided between the common chamber 423 and each chamber so that processes performed in each reaction chamber do not interfere with each other.

Each reaction chamber is divided according to the type of thin film to be formed. For example, the first reaction chamber 400a is formed with an insulating film such as a gate insulating film, the second reaction chamber 400b is formed with a microcrystalline semiconductor film and a buffer layer that form a channel, and the third reaction chamber 400c is formed with a source and The reaction chamber is filled with a semiconductor film to which an impurity imparting one conductivity type for forming a drain is added. Of course, the number of reaction chambers is not limited to this, and can be arbitrarily increased or decreased as necessary. Further, one film may be formed in one reaction chamber, or a plurality of films may be formed in one reaction chamber.

A turbo molecular pump 419 and a dry pump 420 are connected to each reaction chamber as exhaust means. The evacuation means is not limited to the combination of these vacuum pumps, and other vacuum pumps can be applied as long as they can be evacuated to a degree of vacuum of approximately 10 ⁻¹ Pa to 10 ⁻⁵ Pa. A butterfly valve 417 is provided between the exhaust means 430 and each reaction chamber, whereby the vacuum exhaust can be shut off, and the exhaust speed is controlled by the conductance valve 418 so that the pressure in each reaction chamber is controlled. Can be adjusted.

Note that the second reaction chamber 400b in which the microcrystalline semiconductor film is formed may be connected to a cryopump 421 as being evacuated to an ultrahigh vacuum. By using the cryopump 421, the pressure in the reaction chamber can be set to an ultrahigh vacuum with a pressure lower than 10 ⁻⁵ Pa. In this embodiment, a microcrystalline semiconductor film is formed through a plurality of processes such as a semiconductor film formation process, an amorphous semiconductor etching process, and a microcrystalline semiconductor crystal growth process using the microcrystalline semiconductor as a crystal nucleus. Therefore, an ultrahigh vacuum with a pressure lower than 10 ⁻⁵ Pa is effective in reducing the oxygen concentration in the microcrystalline semiconductor film. As a result, the concentration of oxygen contained in the microcrystalline semiconductor film 53 can be 1 × 10 ¹⁶ atoms / cm ³ or less. By reducing the oxygen concentration in the microcrystalline semiconductor film, defects in the film can be reduced, so that carrier movement can be improved.

The gas supply means 408 includes a cylinder 410 filled with a gas used for a process such as a semiconductor material gas represented by silane or a rare gas, a stop valve 412, a mass flow controller 413, and the like. The gas supply means 408g is connected to the first reaction chamber 400a and supplies a gas for forming a gate insulating film. The gas supply means 408i is connected to the second reaction chamber 100b and supplies gas for crystal nuclei, microcrystalline semiconductor film, and buffer layer. The gas supply means 408n is connected to the third reaction chamber 400c and supplies, for example, a gas for an n-type semiconductor film. The gas supply means 408a supplies hydrogen, and the gas supply means 408f is a system for supplying an etching gas used for cleaning the reaction chamber, and these are configured as a common line for each reaction chamber.

Each reaction chamber is connected with high-frequency power supply means 403 for forming plasma. The high frequency power supply means 403 includes a high frequency power supply 404 and a matching unit 406.

FIG. 11 shows a configuration in which a fourth reaction chamber 400d is added to the configuration of the multi-chamber plasma CVD apparatus of FIG. A gas supply means 408b is connected to the fourth reaction chamber 400d. In addition, the configuration of the high-frequency power supply means and the exhaust means is the same. Each reaction chamber can be used properly depending on the type of thin film to be formed. For example, an insulating film such as a gate insulating film is formed in the first reaction chamber 400a, a microcrystalline semiconductor film for a semiconductor film and a channel formation region is formed in the second reaction chamber 400b, and a channel is formed in the fourth reaction chamber 400d. A buffer layer for protecting the microcrystalline semiconductor film for the formation region is formed, and the third reaction chamber 400c is used as a reaction chamber for forming a semiconductor film to which an impurity imparting one conductivity type for forming a source and a drain is added. be able to. Since each thin film has an optimum film formation temperature, it is easy to manage the film formation temperature by separating reaction chambers individually. Furthermore, since the same film type can be repeatedly formed, the influence of residual impurities on the film formation history can be eliminated.

Note that here, as shown in FIGS. 1C and 1D, the microcrystalline semiconductor film 53 and the buffer layer 54 are formed in separate steps, but as shown in FIG. 8, the microcrystalline semiconductor is formed. The film 53 and the buffer layer 54 may be formed continuously. Specifically, as illustrated in FIG. 1A, a semiconductor film 57 is formed over the gate insulating film 52b, and the amorphous semiconductor of the semiconductor film 57 is selectively etched as illustrated in FIG. Thus, a microcrystalline semiconductor 58 is formed, and a microcrystalline semiconductor film 53 is formed using the microcrystalline semiconductor 58 as a crystal nucleus as illustrated in FIG. Next, as illustrated in FIG. 8A, after the microcrystalline semiconductor film 53 is grown using the microcrystalline semiconductor as a seed to form the microcrystalline semiconductor film 53, the buffer layer 54 is continuously formed without exposure to the air. After that, as shown in FIG. 1D, a semiconductor film 55 to which an impurity imparting one conductivity type is added is formed over the buffer layer 54.

FIG. 9 is a time chart for explaining a process in the case where the microcrystalline semiconductor film 53 and the buffer layer 54 are continuously formed, and shows a typical example. The description of FIG. 9 is shown from the stage of evacuating the reaction chamber from atmospheric pressure 440. Subsequent substrate loading 441, base pretreatment 442, semiconductor film formation processing 443, amorphous semiconductor etching processing 444, crystal Each process of the growth process 445, the buffer layer formation process 449, the substrate carry-out 446, and the cleaning 447 is shown in time series. Note that the vacuum evacuation 440, substrate carry-in 441, base pretreatment 442, semiconductor film formation treatment 443, amorphous semiconductor etching treatment 444, substrate carry-out 446, and cleaning 447 are the same as the steps shown in FIG. Here, a buffer layer formation process 449 enters between the crystal growth process 445 and the substrate carry-out 446.

The buffer layer formation process 449 is a process performed subsequent to the crystal growth process 445 for forming a microcrystalline silicon film. The buffer layer is formed by glow discharge plasma by mixing silane gas and hydrogen and / or rare gas. Silane can be diluted with hydrogen and / or rare gas 1 to 10 times, more preferably 1 to 5 times to form an amorphous semiconductor film. The heating temperature of the substrate is 100 ° C to 300 ° C, preferably 120 ° C to 220 ° C.

Note that the buffer layer may be formed of silane without introducing hydrogen into the reaction chamber. In addition, since the flow rate of silane is significantly increased in the buffer layer formation process 449 compared to the crystal growth process 445 for forming the microcrystalline semiconductor film, the power is turned off after the crystal growth process 445 for the microcrystalline semiconductor film, After resetting the flow rate of silane, hydrogen, etc., the power supply may be turned on to form the buffer layer.

By continuously forming the microcrystalline semiconductor film 53 and the buffer layer 54, each stacked interface can be formed without being contaminated by atmospheric components or contaminating impurity elements floating in the atmosphere. Can be reduced.

Next, as illustrated in FIG. 1D, a resist mask 56 is formed over the semiconductor film 55 to which an impurity imparting one conductivity type is added.

  The resist mask 56 is formed by a photolithography technique. Here, the resist applied to the semiconductor film 55 to which an impurity imparting one conductivity type is added is exposed and developed using the second photomask, so that the resist mask 56 is formed.

Next, the microcrystalline semiconductor film 53, the buffer layer 54, and the semiconductor film 55 to which an impurity imparting conductivity is added are etched and separated using a resist mask 56, as shown in FIG. A microcrystalline semiconductor film 61, a buffer layer 62, and a semiconductor film 63 to which an impurity imparting a conductivity type is added are formed. Thereafter, the resist mask 56 is removed. Note that FIG. 12A (excluding the resist mask 56) corresponds to a cross-sectional view taken along a line AB in FIG.

Since the side surfaces of the end portions of the microcrystalline semiconductor film 61 and the buffer layer 62 are inclined, leakage current is prevented from being generated between the source region and the drain region formed over the buffer layer 62 and the microcrystalline semiconductor film 61. Is possible. In addition, leakage current can be prevented from being generated between the wiring layer and the microcrystalline semiconductor film 61. The inclination angles of the side surfaces of the end portions of the microcrystalline semiconductor film 61 and the buffer layer 62 are 90 ° to 30 °, preferably 80 ° to 45 °. By setting such an angle, disconnection of the wiring layer due to the step shape can be prevented.

Next, as illustrated in FIG. 12B, conductive films 65a to 65c are formed over the semiconductor film 63 to which an impurity imparting conductivity is added and the gate insulating film 52b, and a resist is formed over the conductive films 65a to 65c. A mask 66 is formed. The conductive films 65a to 65c are preferably formed using a single layer or a stacked layer of aluminum or an aluminum alloy to which a heat resistance improving element such as copper, silicon, titanium, neodymium, scandium, or molybdenum or a hillock preventing element is added. In addition, a film in contact with a semiconductor film to which an impurity imparting one conductivity type is added is formed using titanium, tantalum, molybdenum, tungsten, or a nitride of these elements, and aluminum or an aluminum alloy is formed thereover. It is good also as a laminated structure. Furthermore, a laminated structure in which the upper and lower surfaces of aluminum or an aluminum alloy are sandwiched between titanium, tantalum, molybdenum, tungsten, or nitrides of these elements may be employed. Here, a conductive film having a structure in which three layers of conductive films 65a to 65c are stacked is shown as the conductive film. The conductive films 65a and 65c are formed of a molybdenum film and the conductive film 65b is formed of an aluminum film. A laminated conductive film using a titanium film as the films 65a and 65c and an aluminum film as the conductive film 65b is shown. The conductive films 65a to 65c are formed by a sputtering method or a vacuum evaporation method.

The resist mask 66 can be formed in the same manner as the resist mask 56.

Next, as illustrated in FIG. 12C, part of the conductive films 65a to 65c is etched to form a pair of wiring layers 71a to 71c (functioning as a source electrode and a drain electrode). Here, when the conductive films 65a to 65c are wet-etched using the resist mask 66 formed by a photolithography process using a third photomask, the ends of the conductive films 65a to 65c are selectively etched. As a result, the wiring layers 71 a to 71 c having a smaller area than the resist mask 66 can be formed.

Next, using the resist mask 66, the semiconductor film 63 to which an impurity imparting one conductivity type is added is etched and separated. As a result, a pair of source and drain regions 72 as shown in FIG. 13A can be formed. Note that part of the buffer layer 62 is also etched in the etching step. A buffer layer partially etched and having a recess is referred to as a buffer layer 73. The step of forming the source region and the drain region and the concave portion of the buffer layer can be formed in the same step. By setting the depth of the concave portion of the buffer layer to 1/2 to 1/3 of the thickest region of the buffer layer, the distance between the source region and the drain region can be increased. Leakage current between the drain regions can be reduced. Thereafter, the resist mask 66 is removed.

Next, dry etching is performed under the condition that the exposed buffer layer is not damaged and the etching rate for the buffer layer is low. By this step, it is possible to remove etching residues on the buffer layer between the source region and the drain region, resist mask residues, and contamination sources in the apparatus used for removing the resist mask, and between the source region and the drain region. Insulation can be ensured. As a result, leakage current of the thin film transistor can be reduced, and a thin film transistor with low off-state current and high withstand voltage can be manufactured. For example, chlorine gas may be used as the etching gas.

Note that FIG. 13A (excluding the resist mask 66) corresponds to a cross-sectional view taken along a line AB in FIG. As shown in FIG. 14B, it can be seen that the end portions of the source region and the drain region 72 are located outside the end portion of the wiring layer 71c. Further, the end portion of the buffer layer 73 is located outside the end portions of the wiring layer 71 c and the source and drain regions 72. One of the wiring layers has a shape surrounding the other of the source region and the drain region (specifically, a U shape or a C shape). Therefore, the area of the region where carriers move can be increased, so that the amount of current can be increased and the area of the thin film transistor can be reduced. In addition, since the microcrystalline semiconductor film and the wiring layer are overlapped over the gate electrode, the influence of the unevenness of the gate electrode is small, so that coverage can be reduced and leakage current can be suppressed.

  Through the above process, a channel-etched thin film transistor 74 can be formed.

Next, as illustrated in FIG. 13B, a protective insulating film 76 is formed over the wiring layers 71a to 71c, the source and drain regions 72, the buffer layer 73, the microcrystalline semiconductor film 61, and the gate insulating film 52b. . The protective insulating film 76 can be formed in the same manner as the gate insulating films 52a and 52b. Note that the protective insulating film 76 is for preventing intrusion of contaminant impurities such as organic substances, metal substances, and water vapor floating in the air, and is preferably a dense film. In addition, by using a silicon nitride film for the protective insulating film 76, the oxygen concentration in the buffer layer 87 can be 5 × 10 ¹⁹ atoms / cm ³ or less, preferably 1 × 10 ¹⁹ atoms / cm ³ or less. The oxidation of the buffer layer 87 can be prevented.

Next, a contact hole is formed by etching part of the protective insulating film 76 using a resist mask formed using a fourth photomask for the protective insulating film 76, and the pixel in contact with the wiring layer 75c in the contact hole. An electrode 77 is formed. Note that FIG. 13C corresponds to a cross-sectional view taken along a line AB in FIG. By using the wiring layers 71a to 71c connected to the pixel electrode 77 as drain electrodes and the wiring layers 71a to 71c facing the wiring layers on the semiconductor layer as source electrodes (source wirings), the Ion of the thin film transistor is increased. Or deterioration due to repetitive operation can be reduced. Further, parasitic capacitance is unlikely to be generated between the gate wiring and the drain electrode, and charges are easily stored in the pixel electrode 77. Therefore, when the thin film transistor is used for a liquid crystal display device, the liquid crystal can be operated at high speed.

The pixel electrode 77 includes indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, ITO, indium zinc oxide, and silicon oxide. A light-transmitting conductive material such as indium tin oxide can be used.

The pixel electrode 77 can be formed using a conductive composition containing a conductive high molecule (also referred to as a conductive polymer). The pixel electrode formed using the conductive composition preferably has a sheet resistance of 10,000 Ω / □ or less and a light transmittance of 70% or more at a wavelength of 550 nm. Moreover, it is preferable that the resistivity of the conductive polymer contained in the conductive composition is 0.1 Ω · cm or less.

As the conductive polymer, a so-called π-electron conjugated conductive polymer can be used. For example, polyaniline or a derivative thereof, polypyrrole or a derivative thereof, polythiophene or a derivative thereof, or a copolymer of two or more kinds thereof can be given.

Here, as the pixel electrode 77, an ITO film is formed by a sputtering method, and then a resist is applied on the ITO. Next, the resist is exposed and developed using a fifth photomask to form a resist mask. Next, the ITO is etched using a resist mask to form the pixel electrode 77.

Through the above steps, a thin film transistor and an element substrate that can be used for a display device can be formed.

  Next, a method for manufacturing a thin film transistor, which is different from that described above, will be described with reference to FIGS. Here, a process for manufacturing a thin film transistor using a process capable of reducing the number of photomasks from the above mode is described.

1A, a conductive film is formed over the substrate 50, a resist is applied over the conductive film, and the conductive film is formed using a resist mask formed by a photolithography process using a first photomask. A part is etched, and the gate electrode 51 is formed. Next, as illustrated in FIG. 15A, gate insulating films 52 a and 52 b are formed over the gate electrode 51. A microcrystalline semiconductor film 53 is formed through steps similar to those in FIGS. Next, over the microcrystalline semiconductor film 53, a buffer layer 54, a semiconductor film 55 to which an impurity imparting one conductivity type is added, and conductive films 65a to 65c are formed in this order. Next, a resist 80 is applied over the conductive film 65a.

As the resist 80, a positive resist or a negative resist can be used. Here, a positive resist is used.

Next, using the multi-tone mask 159 as a second photomask, the resist 80 is irradiated with light to expose the resist 80.

Here, exposure using the multi-tone mask 159 will be described with reference to FIG.

  A multi-tone mask is a mask capable of performing three exposure levels on an exposed portion, an intermediate exposed portion, and an unexposed portion, and a plurality of (typically two types) can be obtained by one exposure and development process. It is possible to form a resist mask having a region with a thickness of. Therefore, the number of photomasks can be reduced by using a multi-tone mask.

Typical examples of the multi-tone mask include a gray-tone mask 59a as shown in FIG. 16A and a half-tone mask 59b as shown in FIG.

As shown in FIG. 16A, the gray tone mask 59a includes a light-transmitting substrate 163, a light shielding portion 164 and a diffraction grating 165 formed thereon. In the light shielding portion 164, the amount of transmitted light is 0%. On the other hand, the diffraction grating 165 can control the amount of transmitted light by setting the interval between the light transmitting portions such as slits, dots, and meshes to be equal to or less than the resolution limit of the light used for exposure. Note that the diffraction grating 165 can use either a periodic slit, a dot, or a mesh, or an aperiodic slit, dot, or mesh.

As the substrate 163 having a light-transmitting property, a substrate having a light-transmitting property such as quartz can be used. The light shielding portion 164 and the diffraction grating 165 can be formed using a light shielding material that absorbs light such as chromium or chromium oxide.

When the gray-tone mask 59a is irradiated with exposure light, as shown in FIG. 16B, the light transmission amount 166 is 0% in the light shielding portion 164, and the light shielding portion 164 and the diffraction grating 165 are not provided. In the region, the light transmission amount 166 is 100%. The diffraction grating 165 can be adjusted in the range of 10 to 70%. The light transmission amount in the diffraction grating 165 can be adjusted by adjusting the interval and pitch of slits, dots, or meshes of the diffraction grating.

As shown in FIG. 16C, the halftone mask 59b includes a light-transmitting substrate 163, a semi-transmissive portion 167 and a light-shielding portion 168 formed thereon. For the semi-transmissive portion 167, MoSiN, MoSi, MoSiO, MoSiON, CrSi, or the like can be used. The light shielding portion 168 can be formed using a light shielding material that absorbs light, such as chromium or chromium oxide.

When the halftone mask 59b is irradiated with exposure light, as shown in FIG. 16D, in the light shielding portion 168, the light transmission amount 169 is 0%, and the light shielding portion 168 and the semi-transmissive portion 167 are provided. In the absence region, the light transmission amount 169 is 100%. Moreover, in the semi-transmissive part 167, it can adjust in 10 to 70% of range. The amount of light transmitted through the semi-transmissive portion 167 can be adjusted by adjusting the material of the semi-transmissive portion 167.

By developing after exposure using a multi-tone mask, a resist mask 81 having regions with different thicknesses can be formed as shown in FIG.

Next, with the resist mask 81, the microcrystalline semiconductor film 53, the buffer layer 54, the semiconductor film 55 to which an impurity imparting one conductivity type is added, and the conductive films 65a to 65c are etched and separated. As a result, as shown in FIG. 17A, a microcrystalline semiconductor film 61, a buffer layer 62, a semiconductor film 63 to which an impurity imparting one conductivity type is added, and conductive films 85a to 85c can be formed. . Note that FIG. 17A (excluding the resist mask 81) corresponds to a cross-sectional view taken along line AB of FIG.

  Next, the resist mask 81 is ashed. As a result, the resist area is reduced and the thickness is reduced. At this time, the resist in a thin region (a region overlapping with part of the gate electrode 51) is removed, and a separated resist mask 86 can be formed as shown in FIG.

Next, the conductive films 85 a to 85 c are etched and separated using the resist mask 86. As a result, a pair of wiring layers 92a to 92c as shown in FIG. 17B can be formed. When the conductive films 89a to 89c are wet-etched using the resist mask 86, the ends of the conductive films 89a to 89c are selectively etched. As a result, the wiring layers 92 a to 92 c having a smaller area than the resist mask 86 can be formed.

  Next, the semiconductor film 63 to which an impurity imparting one conductivity type is added is etched using the resist mask 86, so that a pair of source and drain regions 88 is formed. Note that part of the buffer layer 62 is also etched in the etching step. The partially etched buffer layer is referred to as a buffer layer 87. A concave portion is formed in the buffer layer 87. The step of forming the source region and the drain region and the concave portion of the buffer layer can be formed in the same step. Here, a part of the buffer layer 87 is partially etched by the resist mask 86 whose area is reduced as compared with the resist mask 81, so that the buffer layer 87 protrudes outside the source and drain regions 88. . In addition, the end portions of the wiring layers 92a to 92c and the end portions of the source region and the drain region 88 are not coincident with each other, and the end portions of the source region and the drain region 88 are located outside the end portions of the wiring layers 92a to 92c. Is formed. Thereafter, the resist mask 66 is removed.

Next, dry etching is performed under the condition that the exposed buffer layer is not damaged and the etching rate for the buffer layer is low. By this step, it is possible to remove etching residues on the buffer layer between the source region and the drain region, resist mask residues, and contamination sources in the apparatus used for removing the resist mask, and between the source region and the drain region. Insulation can be ensured. As a result, leakage current of the thin film transistor can be reduced, and a thin film transistor with low off-state current and high withstand voltage can be manufactured. For example, chlorine gas may be used as the etching gas.

As shown in FIG. 17C, the end portions of the wiring layers 92a to 92c and the end portions of the source region and the drain region 88 are not aligned and shifted, so that the end portions of the wiring layers 92a to 92c are formed. Since the distance is increased, it is possible to prevent a leakage current or a short circuit between the wiring layers. Therefore, an inverted staggered thin film transistor can be manufactured.

  Through the above process, a channel-etched thin film transistor 83 can be formed. In addition, a thin film transistor can be formed using two photomasks.

Next, as illustrated in FIG. 17A, a protective insulating film 76 is formed over the wiring layers 92a to 92c, the source and drain regions 88, the buffer layer 87, the microcrystalline semiconductor film 90, and the gate insulating film 52b. . The protective insulating film 76 can be formed in the same manner as the gate insulating films 52a and 52b.

Next, a part of the protective insulating film 76 is etched using a resist mask formed using a third photomask to form a contact hole. Next, the pixel electrode 77 in contact with the wiring layer 75c in the contact hole is formed. Here, as the pixel electrode 77, an ITO film is formed by a sputtering method, and then a resist is applied on the ITO. Next, the resist is exposed and developed using a fourth photomask to form a resist mask. Next, the ITO is etched using a resist mask to form the pixel electrode 77. Note that FIG. 18B corresponds to a cross-sectional view taken along a line AB in FIG.

Through the above, a thin film transistor and an element substrate that includes the thin film transistor and can be used for a display device can be formed.

12C or 17B, after the wiring layers 92a to 92c are formed, the resist mask 86 is removed, and an impurity imparting one conductivity type is added using the wiring layers 92a to 92c as a mask. The semiconductor film 63 may be etched. As a result, a thin film transistor can be formed in which the wiring layers 71a to 71c and the end portions of the source region and the drain region 88 coincide. Here, after removing the resist mask 86 in FIG. 12B, the semiconductor film 63 to which an impurity imparting one conductivity type is added is etched using the wiring layers 92a to 92c as masks, so that the source and drain regions are etched. FIG. 20B shows a thin film transistor in which the end portion 89 and the end portions of the wiring layers 92a to 92c are aligned.

Through the above process, a channel-etched thin film transistor can be formed. A channel-etched thin film transistor has a small number of manufacturing steps and can reduce costs. Further, field effect mobility of 1 to ²⁰ cm ² / V · sec can be obtained by forming a channel formation region using a microcrystalline semiconductor film. Therefore, this thin film transistor can be used as an element for switching a pixel in the pixel portion and an element for forming a driving circuit on the scanning line (gate line) side.

Note that although a channel-etched thin film transistor is described in this embodiment mode, a microcrystalline semiconductor film can be used for a channel formation region of the channel protective thin film transistor.

According to this embodiment mode, an inverted staggered thin film transistor with excellent electrical characteristics and a display substrate including the thin film transistor can be manufactured.

Note that although an inverted staggered thin film transistor is used as a thin film transistor in this embodiment mode, the present invention is not limited to this, and can be applied to a forward staggered thin film transistor, a top gate thin film transistor, or the like. Specifically, on the insulating film functioning as a base film, the microcrystalline semiconductor is left on the insulating film as in this embodiment, and the microcrystalline semiconductor is grown as a seed to form a microcrystalline semiconductor film. When a gate insulating film and a gate electrode are formed over the microcrystalline semiconductor film, a thin film transistor including a microcrystalline semiconductor film with improved crystallinity at the interface with the insulating film can be manufactured. Therefore, a thin film transistor with excellent electrical characteristics can be formed.

(Embodiment 2)
In this embodiment, a liquid crystal display device including the thin film transistor described in Embodiment 1 as one embodiment of the display device is described below. Here, a VA (Vertical Alignment) liquid crystal display device will be described with reference to FIGS. The VA liquid crystal display device is a type of a method for controlling the alignment of liquid crystal molecules in a liquid crystal panel. The VA liquid crystal display device is a method in which liquid crystal molecules face a vertical direction with respect to a panel surface when no voltage is applied. In the present embodiment, the pixel (pixel) is divided into several regions (sub-pixels), and each molecule is devised to tilt the molecules in different directions. This is called multi-domain or multi-domain design. In the following description, a liquid crystal display device considering multi-domain design will be described.

  21 and 22 show the pixel structure of the VA liquid crystal panel. FIG. 22 is a plan view of the substrate 600, and FIG. 21 shows a cross-sectional structure corresponding to the cutting line YZ shown in the drawing. The following description will be given with reference to both the drawings.

  In this pixel structure, one pixel has a plurality of pixel electrodes, and a thin film transistor is connected to each pixel electrode through a planarization film 622. Each thin film transistor is configured to be driven by a different gate signal. In other words, a multi-domain designed pixel has a configuration in which signals applied to individual pixel electrodes are controlled independently.

  The pixel electrode 624 is connected to the thin film transistor 628 through a wiring 618 in the contact hole 623. The pixel electrode 626 is connected to the thin film transistor 629 through a wiring 619 in a contact hole 627. The gate wiring 602 of the thin film transistor 628 and the gate wiring 603 of the thin film transistor 629 are separated so that different gate signals can be given. On the other hand, the wiring 616 functioning as a data line is used in common for the thin film transistor 628 and the thin film transistor 629. The thin film transistor 628 and the thin film transistor 629 can be manufactured using the method described in Embodiment 1.

  The pixel electrode 624 and the pixel electrode 626 have different shapes and are separated by a slit 625. A pixel electrode 626 is formed so as to surround the outside of the V-shaped pixel electrode 624. The timing of the voltage applied to the pixel electrode 624 and the pixel electrode 626 is different depending on the thin film transistor 628 and the thin film transistor 629, thereby controlling the alignment of the liquid crystal. When the gate wiring 602 and the gate wiring 603 are supplied with different gate signals, operation timings of the thin film transistor 628 and the thin film transistor 629 can be different. An alignment film 646 is formed over the pixel electrodes 624 and 626.

  A counter substrate 601 is provided with a light shielding film 632, a second coloring film 636, and a counter electrode 640. In addition, a planarization film 637 is formed between the second coloring film 636 and the counter electrode 640 to prevent alignment disorder of the liquid crystal. In addition, an alignment film 646 is formed over the counter electrode 640. FIG. 23 shows a structure on the counter substrate side. The counter electrode 640 is a common electrode between different pixels, but a slit 641 is formed. By disposing the slits 641 and the pixel electrodes 624 and the slits 625 on the pixel electrode 626 side so as to alternately engage with each other, an oblique electric field can be effectively generated to control the alignment of the liquid crystal. Thereby, the direction in which the liquid crystal is aligned can be varied depending on the location, and the viewing angle is widened.

The pixel electrode 624, the liquid crystal layer 650, and the counter electrode 640 overlap with each other, so that a first liquid crystal element is formed. In addition, the pixel electrode 626, the liquid crystal layer 650, and the counter electrode 640 overlap with each other, so that a second liquid crystal element is formed. In addition, the multi-domain structure in which the first liquid crystal element and the second liquid crystal element are provided in one pixel.

Note that although a VA (Vertical Alignment) liquid crystal display device is shown here as the liquid crystal display device, an element substrate formed using Embodiment Mode 1 is used as an FFS liquid crystal display device or an IPS liquid crystal display. It can be used for a device, a TN liquid crystal display device, and other liquid crystal display devices.

Through the above process, a liquid crystal display device can be manufactured. Since the liquid crystal display device of this embodiment uses an inverted staggered thin film transistor with low off-state current and excellent electrical characteristics, a liquid crystal display device with high contrast and high visibility can be manufactured.

(Embodiment 3)
In this embodiment, as one embodiment of the display device, a light-emitting display device including the thin film transistor described in Embodiment 1 is described below. Here, a structure of a pixel included in the light-emitting display device is described. FIG. 27A illustrates one mode of a top view of a pixel, and FIG. 27B illustrates one mode of a cross-sectional structure of a pixel corresponding to AB in FIG. 27A.

Here, the light-emitting device is described using a light-emitting element utilizing electroluminescence. A light-emitting element using electroluminescence is distinguished depending on whether the light-emitting material is an organic compound or an inorganic compound. Generally, the former is called an organic EL element and the latter is called an inorganic EL element. Here, Embodiment Mode 1 can be used as a manufacturing process of a thin film transistor.

  In the organic EL element, by applying a voltage to the light emitting element, electrons and holes are respectively injected from the pair of electrodes into the layer containing the light emitting organic compound, and a current flows. Then, these carriers (electrons and holes) recombine, whereby the light-emitting organic compound forms an excited state, and emits light when the excited state returns to the ground state. Due to such a mechanism, such a light-emitting element is referred to as a current-excitation light-emitting element.

Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. The dispersion-type inorganic EL element has a light-emitting layer in which particles of a light-emitting material are dispersed in a binder, and the light emission mechanism is donor-acceptor recombination light emission using a donor level and an acceptor level. The thin-film inorganic EL element has a structure in which a light emitting layer is sandwiched between dielectric layers and further sandwiched between electrodes, and the light emission mechanism is localized light emission utilizing inner-shell electron transition of metal ions. Note that description is made here using an organic EL element as a light-emitting element. In addition, although a thin film transistor for switching for controlling input of a signal to the pixel electrode and a thin film transistor for controlling driving of the light emitting element are illustrated using a channel etch type thin film transistor, a channel protection type thin film transistor is appropriately used. be able to.

  27A and 27B, the first thin film transistor 74 a is a switching thin film transistor for controlling the input of a signal to the pixel electrode, and the second thin film transistor 74 b is a current to the light emitting element 94. Alternatively, this corresponds to a driving thin film transistor for controlling supply of voltage.

The gate electrode of the first thin film transistor 74a is connected to the scanning line 51a, one of the source or drain is connected to the signal lines 71a to 71c, and the other of the source or drain is connected to the gate electrode 51b of the second thin film transistor 74b. One of the source and the drain of the second thin film transistor 74b is connected to the power supply lines 93a to 93c, and the other of the source and the drain is connected to the pixel electrode 79 of the display device. The capacitor element 96 includes the gate electrode, the gate insulating film, and the power supply line 93 a of the second thin film transistor 74 b, and the other of the source and the drain of the first thin film transistor 74 a is connected to the capacitor element 96.

Note that the capacitor 96 is a capacitor for holding the gate / source voltage or the gate / drain voltage (hereinafter referred to as gate voltage) of the second thin film transistor 74b when the first thin film transistor 74a is off. It is not necessary to provide it.

In this embodiment, the first thin film transistor 74a and the second thin film transistor 74b can be formed using Embodiment 1. The first thin film transistor 74a and the second thin film transistor 74b are formed using n-channel thin film transistors here, but the first thin film transistor 74a is formed using an n-channel thin film transistor and the second thin film transistor 74b is formed using a p-channel thin film transistor. It may be formed. Further, the first thin film transistor 74a and the second thin film transistor 74b may be formed using p-channel thin film transistors.

A protective insulating film 76 is formed over the first thin film transistor 74 a and the second thin film transistor 74 b, a planarizing film 78 is formed over the protective insulating film 76, and contact holes formed in the planarizing film 78 and the protective insulating film 65. The cathode 79 connected to the wiring 64c is formed. The planarizing film 78 is preferably formed using an organic resin such as acrylic, polyimide, or polyamide, or a siloxane polymer. In the contact hole, since the cathode 79 has unevenness, a partition wall 91 that covers the region and has an opening is provided. A light emitting layer 92 is formed so as to be in contact with the cathode 79 in the opening of the partition wall 91, an anode 93 is formed so as to cover the light emitting layer 92, and a protective insulating film 95 is formed so as to cover the anode 93 and the partition wall 91. .

Here, a light emitting element 94 having a top emission structure is shown as the light emitting element. Since the light-emitting element 94 having a top emission structure can emit light even on the first thin film transistor 74a and the second thin film transistor 74b, the light-emitting area can be increased. However, if the base film of the light emitting layer 92 has unevenness, the film thickness distribution is uneven in the unevenness, and the anode 93 and the cathode 79 are short-circuited, resulting in a display defect. For this reason, it is preferable to provide the planarization film 78.

  A region where the light emitting layer 92 is sandwiched between the cathode 79 and the anode 93 corresponds to the light emitting element 94. In the case of the pixel shown in FIG. 27A, light emitted from the light emitting element 94 is emitted to the anode 93 side as indicated by a white arrow.

A known material can be used for the cathode 79 as long as it has a small work function and reflects light. For example, Ca, Al, CaF, MgAg, AlLi, etc. are desirable. The light emitting layer 92 may be composed of a single layer or may be composed of a plurality of layers stacked. In the case of a plurality of layers, the cathode 79 is laminated in the order of an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer. Note that it is not necessary to provide all of these layers. The anode 93 is formed using a light-transmitting conductive material, for example, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, or titanium oxide. A light-transmitting conductive conductive film such as indium tin oxide containing ITO, ITO, indium zinc oxide, or indium tin oxide to which silicon oxide is added may be used.

Here, a light emitting element having a top emission structure in which light emission is extracted from a surface opposite to the substrate is shown; however, a light emitting element having a bottom emission structure in which light emission is extracted from a surface on the substrate side, or a substrate side and a side opposite to the substrate. A light-emitting element having a dual emission structure in which light is extracted from a surface can be used as appropriate.

Although an organic EL element is described here as a light-emitting element, an inorganic EL element can also be provided as a light-emitting element.

  Note that in this embodiment mode, an example in which a thin film transistor (driving thin film transistor) that controls driving of a light emitting element and the light emitting element are electrically connected is shown; however, current control is performed between the driving thin film transistor and the light emitting element. The thin film transistor may be connected.

Through the above process, a light-emitting display device can be manufactured. Since the light-emitting device of this embodiment uses an inverted staggered thin film transistor with low off-state current and excellent electrical characteristics, a light-emitting display device with high contrast and high visibility can be manufactured.

(Embodiment 4)
Next, a structure of a display panel which is one embodiment of the display device of the present invention is described below.

  FIG. 25 shows a mode of a display panel in which only the signal line driver circuit 6013 is separately formed and connected to the pixel portion 6012 formed over the substrate 6011. The pixel portion 6012 and the scan line driver circuit 6014 are formed using a thin film transistor including a microcrystalline semiconductor film. By forming the signal line driver circuit with a transistor that can obtain higher mobility than a thin film transistor using a microcrystalline semiconductor film, the operation of the signal line driver circuit that requires a higher driving frequency than the scanning line driver circuit is stabilized. be able to. Note that the signal line driver circuit 6013 may be a transistor using a single crystal semiconductor, a thin film transistor using a polycrystalline semiconductor, or a transistor using SOI. The pixel portion 6012, the signal line driver circuit 6013, and the scan line driver circuit 6014 are supplied with a potential of a power source, various signals, and the like through the FPC 6015, respectively.

  Note that both the signal line driver circuit and the scan line driver circuit may be formed over the same substrate as the pixel portion.

  In the case where a driver circuit is separately formed, the substrate on which the driver circuit is formed is not necessarily bonded to the substrate on which the pixel portion is formed, and may be bonded to, for example, an FPC. FIG. 25B illustrates a mode of a display device panel in which only the signal line driver circuit 6023 is separately formed and connected to the pixel portion 6022 and the scan line driver circuit 6024 which are formed over the substrate 6021. The pixel portion 6022 and the scan line driver circuit 6024 are formed using a thin film transistor including a microcrystalline semiconductor film. The signal line driver circuit 6023 is connected to the pixel portion 6022 through the FPC 6025. The pixel portion 6022, the signal line driver circuit 6023, and the scan line driver circuit 6024 are supplied with power supply potential, various signals, and the like through the FPC 6025.

  In addition, only part of the signal line driver circuit or part of the scan line driver circuit is formed over the same substrate as the pixel portion by using a thin film transistor using a microcrystalline semiconductor film, and the rest is formed separately. You may make it connect electrically. In FIG. 25C, an analog switch 6033a included in the signal line driver circuit is formed over the same substrate 6031 as the pixel portion 6032 and the scan line driver circuit 6034, and a shift register 6033b included in the signal line driver circuit is provided over a different substrate. The form of the display device panel formed and bonded is shown. The pixel portion 6032 and the scan line driver circuit 6034 are formed using a thin film transistor including a microcrystalline semiconductor film. A shift register 6033 b included in the signal line driver circuit is connected to the pixel portion 6032 through the FPC 6035. A potential of a power source, various signals, and the like are supplied to the pixel portion 6032, the signal line driver circuit, and the scan line driver circuit 6034 through the FPC 6035, respectively.

  As shown in FIG. 25, in the display device of this embodiment, part or all of the driver circuit can be formed over the same substrate as the pixel portion using a thin film transistor including a microcrystalline semiconductor film.

  Note that a method for connecting a separately formed substrate is not particularly limited, and a known COG method, wire bonding method, TAB method, or the like can be used. Further, the connection position is not limited to the position illustrated in FIG. 25 as long as electrical connection is possible. In addition, a controller, a CPU, a memory, and the like may be separately formed and connected.

  Note that the signal line driver circuit used in the present invention includes a shift register and an analog switch. Alternatively, in addition to the shift register and the analog switch, other circuits such as a buffer, a level shifter, and a source follower may be included. The shift register and the analog switch are not necessarily provided. For example, another circuit that can select a signal line such as a decoder circuit may be used instead of the shift register, or a latch or the like may be used instead of the analog switch. May be.

(Embodiment 5)
The display device obtained by the present invention can be used for an active matrix display device panel. That is, the present invention can be implemented in all electronic devices in which they are incorporated in the display portion.

  Such electronic devices include cameras such as video cameras and digital cameras, head mounted displays (goggles type displays), car navigation, projectors, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.) ) And the like. An example of them is shown in FIG.

  FIG. 26A illustrates a television device. As shown in FIG. 26A, a television device can be completed by incorporating the display panel into a housing. A main screen 2003 is formed by the display panel, and a speaker portion 2009, operation switches, and the like are provided as other accessory equipment. In this manner, a television device can be completed.

  As shown in FIG. 26A, a display panel 2002 using a display element is incorporated in a housing 2001, and reception of general television broadcasting is started by a receiver 2005, or wired or wirelessly via a modem 2004. By connecting to a communication network, information communication in one direction (from the sender to the receiver) or in both directions (between the sender and the receiver or between the receivers) can be performed. The television device can be operated by a switch incorporated in the housing or a separate remote controller 2006, and this remote controller is also provided with a display unit 2007 for displaying information to be output. Also good.

  In addition, the television device may have a configuration in which a sub screen 2008 is formed using the second display panel in addition to the main screen 2003 to display a channel, a volume, and the like. In this structure, the main screen 2003 may be formed using a liquid crystal display panel with an excellent viewing angle, and the sub screen may be formed using a light-emitting display panel that can display with low power consumption. In order to give priority to lower power consumption, the main screen 2003 may be formed using a light-emitting display panel, the sub screen may be formed using a light-emitting display panel, and the sub screen may be blinkable.

FIG. 27 is a block diagram illustrating a main configuration of the television device. In the display panel 900, a pixel portion 921 is formed. The signal line driver circuit 922 and the scan line driver circuit 923 may be mounted on the display panel 900 by a COG method.

  As other external circuit configurations, on the input side of the video signal, among the signals received by the tuner 924, the video signal amplification circuit 925 that amplifies the video signal, and the signal output therefrom is each of red, green, and blue And a control circuit 927 for converting the video signal into an input specification of the driver IC. The control circuit 927 outputs a signal to each of the scanning line side and the signal line side. In the case of digital driving, a signal dividing circuit 928 may be provided on the signal line side so that an input digital signal is divided into m pieces and supplied.

  Of the signals received by the tuner 924, the audio signal is sent to the audio signal amplification circuit 929, and the output is supplied to the speaker 933 through the audio signal processing circuit 930. The control circuit 931 receives control information on the receiving station (reception frequency) and volume from the input unit 932 and sends a signal to the tuner 924 and the audio signal processing circuit 930.

  Of course, the present invention is not limited to a television device, but can be applied to various applications such as personal computer monitors, information display boards at railway stations and airports, and advertisement display boards on streets. can do.

By using the display device described in the above embodiment in the main screen 2003 and the sub screen 2008, mass productivity of the television device can be improved.

FIG. 26B illustrates an example of a mobile phone 2301. The cellular phone 2301 includes a display portion 2302, an operation portion 2303, and the like. In the display portion 2302, by applying the display device described in the above embodiment mode, mass productivity of the mobile phone can be improved.

  A portable computer shown in FIG. 26C includes a main body 2401, a display portion 2402, and the like. By applying the display device described in the above embodiment to the display portion 2402, the mass productivity of the computer can be improved.

FIG. 26D illustrates a table lamp, which includes a lighting unit 2501, an umbrella 2502, a variable arm 2503, a column 2504, a stand 2505, and a power source 2506. It is manufactured by using the light emitting device of the present invention for the lighting portion 2501. The lighting fixture includes a ceiling-fixed lighting fixture or a wall-mounted lighting fixture. By applying the display device described in any of the above embodiments, mass productivity can be increased and an inexpensive desk lamp can be provided.

FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. It is an example of the time chart explaining the process of forming a microcrystal silicon film. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. It is a cross-sectional view illustrating a method for manufacturing a conventional display device. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. It is an example of the time chart explaining the process of forming a microcrystal silicon film. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. It is an example of the time chart explaining the process of forming a microcrystal silicon film. It is a figure which shows the structure of the plasma CVD apparatus applicable to this invention. It is a figure which shows the structure of the plasma CVD apparatus applicable to this invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a top view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. It is a figure explaining the multi-tone mask applicable to this invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a top view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a cross-sectional view illustrating a method for manufacturing a display device of the present invention. FIG. 11 is a cross-sectional view illustrating a display device of the present invention. FIG. 11 is a top view illustrating a display device of the present invention. FIG. 11 is a top view illustrating a display device of the present invention. 5A and 5B are a cross-sectional view and a top view illustrating a display device of the present invention. FIG. 11 is a perspective view illustrating a display panel of the present invention. FIG. 11 is a perspective view illustrating an electronic device using the display device of the invention. It is a figure explaining the electronic device using the display apparatus of this invention.

Claims (1)

A first step of forming an insulating film on the gate electrode;
Wherein on the insulating film, a second for forming the first semiconductor film having a first deposition gas containing silicon or germanium, a first hydrogen gas, an amorphous semiconductor portion and crystal semiconductor portion using And the process of
A third step of selectively etching the amorphous semiconductor portion of the first semiconductor film by plasma treatment to leave the crystalline semiconductor portion on the insulating film;
A second semiconductor film is formed by using a second deposition gas containing silicon or germanium and a second hydrogen gas, and performing crystal growth in the vertical direction using the remaining crystal semiconductor portion as a nucleus. A fourth step of forming
A fifth step of etching and thinning the second semiconductor film;
And a sixth step of forming a buffer layer in contact with the thinned second semiconductor film ,
At least the second step to the fourth step are performed in one reaction chamber,
In the step of performing the fourth step, helium gas is introduced into the reaction chamber as a reaction gas,
The plasma treatment is a method for manufacturing a thin film transistor, wherein the hydrogen plasma treatment or a fluorine plasma treatment.

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