JP5303791B2 - 電子ウェーハを相互接続する方法 - Google Patents
電子ウェーハを相互接続する方法 Download PDFInfo
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- JP5303791B2 JP5303791B2 JP2009546775A JP2009546775A JP5303791B2 JP 5303791 B2 JP5303791 B2 JP 5303791B2 JP 2009546775 A JP2009546775 A JP 2009546775A JP 2009546775 A JP2009546775 A JP 2009546775A JP 5303791 B2 JP5303791 B2 JP 5303791B2
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- 238000000034 method Methods 0.000 title claims description 22
- 235000012431 wafers Nutrition 0.000 title description 52
- 239000002904 solvent Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 238000000149 argon plasma sintering Methods 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 238000005245 sintering Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
- Y10T29/49167—Manufacturing circuit on or in base by forming conductive walled aperture in base with deforming of conductive path
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
−異種混合の構成部品の相互接続及び積み重ね、
−各々が多数の同じ異種混合の構成部品を含む、シリコンウェーハの相互接続及び積み重ね。
−熱圧着、
−はんだ合金のリフロー、
−その他。
−無視できない数の構成部品を損傷する、各相互接続に対する高温の処理及び/又は圧力、
−達成が困難な、極度に正確な位置合わせ、
−全てのビアホールが接触しなければならないため、非常に良好な平坦度、
を必要とする。
−第1のウェーハの各ビアホール上に、溶剤を含む導電性のインクの液滴を置く第1のステップと、
−前記第1のステップの後に行われるステップであって、第2のウェーハのビアホールが実質的に第1のウェーハのビアホール上に重なるように、第2のウェーハを第1のウェーハ上に積み上げる第2のステップと、
−前記第2のステップの後に行われるステップであって、ペースト状のインクを得るように、加熱又は真空の適用によって、液滴の中に含まれる溶剤を50〜90%除去する第3のステップと、
−前記第3のステップの後に行われるステップであって、重なっている金属化されたビアホール間に電気的接続を生成するように、ペースト状のインクの液滴をレーザー焼結する第4のステップと、
を含むことを特徴とする。
Claims (10)
- 第1のウェーハ(T1)の電子部品と第2のウェーハ(T2)の電子部品を相互接続する方法であって、各ウェーハが、当該ウェーハを厚さ方向に貫通する金属化されたビアホール(1)を有し、
−前記第1のウェーハ(T1)の各ビアホール(1)上に、溶剤を含む導電性のインクの液滴(3)を置く第1のステップと、
−前記第1のステップの後に行われるステップであって、前記第2のウェーハ(T2)の前記ビアホール(1)が実質的に前記第1のウェーハ(T1)の前記ビアホール(1)に重なるように、前記第2のウェーハ(T2)を前記第1のウェーハ上に積み上げる第2のステップと、
−前記第2のステップの後に行われるステップであって、ペースト状のインクを得るように、加熱又は真空の適用によって、前記液滴(3)の中に含まれる前記溶剤を50〜90%除去する第3のステップと、
−前記第3のステップの後に行われるステップであって、前記重なっている金属化されたビアホール(1)間に電気的接続(31)を生成するように、前記ペースト状のインクの液滴(3)をレーザー焼結する第4のステップと
を含むことを特徴とする方法。 - 集積されたレーザーダイオードを用いて少なくとも1つの電気的接続(31)を点検する追加ステップを含むことを特徴とする請求項1に記載の方法。
- 前記第1のウェーハ(T1)が、少なくとも1つの別のウェーハに前もって接続されたウェーハであることを特徴とする、請求項1または2に記載の方法。
- 前記導電性のインクが、Ag、Cu、あるいはAuなどの金属のナノ粒子を含むことを特徴とする、請求項1〜3のいずれか一項に記載の方法。
- 前記液滴(3)が、インクジェット又はシルクスクリーン印刷により置かれることを特徴とする、請求項1〜4のいずれか一項に記載の方法。
- 前記金属化されたビアホールの前記金属が前記ビアホールを完全に満たし、従ってピラーを形成することを特徴とする、請求項1〜5のいずれか一項に記載の方法。
- ピラーが突起物(11)により延長されることを特徴とする、請求項1〜6のいずれか一項に記載の方法。
- ウェーハが2つの面(a、b)を有し、導電性のカラー(2)がウェーハの片面又は両面において、金属化されたビアホール(1)を囲み、前記ビアホール(1)上に置かれた液滴(3)がこのカラー(2)と接触することを特徴とする、請求項1〜7のいずれか一項に記載の方法。
- 前記カラー(2)が、前記ビアホール(1)上にほぼ中心のある中空でない円板を形成することを特徴とする、請求項6及び8のいずれか一項に記載の方法。
- 少なくとも1つのカラー(2)が隆起(21)を備えることを特徴とする、請求項8あるいは9のいずれか一項に記載の方法。
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FR07/00625 | 2007-01-30 | ||
FR0700625A FR2911995B1 (fr) | 2007-01-30 | 2007-01-30 | Procede d'interconnexion de tranches electroniques |
PCT/EP2008/050970 WO2008095811A1 (fr) | 2007-01-30 | 2008-01-28 | Procede d'interconnexion de tranches electroniques |
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JP2010517283A JP2010517283A (ja) | 2010-05-20 |
JP5303791B2 true JP5303791B2 (ja) | 2013-10-02 |
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US (1) | US8136237B2 (ja) |
EP (1) | EP2126969B1 (ja) |
JP (1) | JP5303791B2 (ja) |
KR (1) | KR101403193B1 (ja) |
FR (1) | FR2911995B1 (ja) |
WO (1) | WO2008095811A1 (ja) |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |