JP5301177B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5301177B2
JP5301177B2 JP2008059730A JP2008059730A JP5301177B2 JP 5301177 B2 JP5301177 B2 JP 5301177B2 JP 2008059730 A JP2008059730 A JP 2008059730A JP 2008059730 A JP2008059730 A JP 2008059730A JP 5301177 B2 JP5301177 B2 JP 5301177B2
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JP
Japan
Prior art keywords
film
insulating film
region
memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008059730A
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English (en)
Japanese (ja)
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JP2008263181A (ja
JP2008263181A5 (https=
Inventor
健吾 秋元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008059730A priority Critical patent/JP5301177B2/ja
Publication of JP2008263181A publication Critical patent/JP2008263181A/ja
Publication of JP2008263181A5 publication Critical patent/JP2008263181A5/ja
Application granted granted Critical
Publication of JP5301177B2 publication Critical patent/JP5301177B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/0131—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional conductive layer comprising a silicide layer formed by the silicidation reaction between the layer of silicon with a metal layer which is not formed by metal implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2008059730A 2007-03-19 2008-03-10 半導体装置 Expired - Fee Related JP5301177B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008059730A JP5301177B2 (ja) 2007-03-19 2008-03-10 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007070421 2007-03-19
JP2007070421 2007-03-19
JP2008059730A JP5301177B2 (ja) 2007-03-19 2008-03-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2008263181A JP2008263181A (ja) 2008-10-30
JP2008263181A5 JP2008263181A5 (https=) 2011-03-24
JP5301177B2 true JP5301177B2 (ja) 2013-09-25

Family

ID=39773810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008059730A Expired - Fee Related JP5301177B2 (ja) 2007-03-19 2008-03-10 半導体装置

Country Status (3)

Country Link
US (3) US7791172B2 (https=)
JP (1) JP5301177B2 (https=)
KR (1) KR101467389B1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101453829B1 (ko) * 2007-03-23 2014-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조 방법
WO2009001733A1 (en) * 2007-06-25 2008-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2010060262A (ja) * 2008-08-04 2010-03-18 Sanden Corp 冷凍回路用樹脂材料
JP5835771B2 (ja) * 2011-10-21 2015-12-24 国立大学法人北海道大学 論理回路
SG10201803464XA (en) 2017-06-12 2019-01-30 Samsung Electronics Co Ltd Semiconductor memory device and method of manufacturing the same
JP6563988B2 (ja) 2017-08-24 2019-08-21 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体記憶装置
JP6623247B2 (ja) * 2018-04-09 2019-12-18 ウィンボンド エレクトロニクス コーポレーション フラッシュメモリおよびその製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1997132A (en) 1930-11-14 1935-04-09 Collorio Felix Packing core for earth dams
US3878549A (en) * 1970-10-27 1975-04-15 Shumpei Yamazaki Semiconductor memories
US5248630A (en) * 1987-07-27 1993-09-28 Nippon Telegraph And Telephone Corporation Thin film silicon semiconductor device and process for producing thereof
JPH07114184B2 (ja) * 1987-07-27 1995-12-06 日本電信電話株式会社 薄膜形シリコン半導体装置およびその製造方法
JPH0613627A (ja) * 1991-10-08 1994-01-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3186708B2 (ja) * 1997-09-11 2001-07-11 日本電気株式会社 半導体装置の製造方法
KR100316707B1 (ko) * 1999-02-05 2001-12-28 윤종용 모스 트랜지스터 및 그 제조방법
JP4666783B2 (ja) * 2000-02-01 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5068402B2 (ja) * 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法
US6858480B2 (en) * 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7115453B2 (en) * 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP4071005B2 (ja) * 2001-01-29 2008-04-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4993810B2 (ja) * 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW541584B (en) * 2001-06-01 2003-07-11 Semiconductor Energy Lab Semiconductor film, semiconductor device and method for manufacturing same
WO2003081667A1 (en) * 2002-03-26 2003-10-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device and production method therefor
JP4360798B2 (ja) * 2002-11-28 2009-11-11 シャープ株式会社 半導体膜およびその製造方法、ならびに半導体装置、その製造方法および半導体製造装置
US7504663B2 (en) * 2004-05-28 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a floating gate electrode that includes a plurality of particles
JP4942950B2 (ja) 2004-05-28 2012-05-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4657016B2 (ja) 2004-06-14 2011-03-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7335556B2 (en) * 2004-06-14 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR100642898B1 (ko) * 2004-07-21 2006-11-03 에스티마이크로일렉트로닉스 엔.브이. 반도체 장치의 트랜지스터 및 그 제조방법
US20060118869A1 (en) * 2004-12-03 2006-06-08 Je-Hsiung Lan Thin-film transistors and processes for forming the same
KR100699830B1 (ko) * 2004-12-16 2007-03-27 삼성전자주식회사 이레이즈 효율을 개선하는 비휘발성 메모리 소자 및 제조방법
KR100609587B1 (ko) * 2004-12-30 2006-08-08 매그나칩 반도체 유한회사 비휘발성 메모리 장치의 제조방법
US7968932B2 (en) * 2005-12-26 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
US8072017B2 (en) 2011-12-06
JP2008263181A (ja) 2008-10-30
US20120043549A1 (en) 2012-02-23
US7791172B2 (en) 2010-09-07
KR101467389B1 (ko) 2014-12-01
US8395201B2 (en) 2013-03-12
KR20080085698A (ko) 2008-09-24
US20080230825A1 (en) 2008-09-25
US20100314624A1 (en) 2010-12-16

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