JP2008263181A - 不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶装置 Download PDFInfo
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- JP2008263181A JP2008263181A JP2008059730A JP2008059730A JP2008263181A JP 2008263181 A JP2008263181 A JP 2008263181A JP 2008059730 A JP2008059730 A JP 2008059730A JP 2008059730 A JP2008059730 A JP 2008059730A JP 2008263181 A JP2008263181 A JP 2008263181A
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- insulating film
- memory
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 136
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 41
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 41
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 25
- 239000012535 impurity Substances 0.000 claims description 36
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 22
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 238000003860 storage Methods 0.000 claims description 9
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 37
- 239000002184 metal Substances 0.000 abstract description 37
- 229910021334 nickel silicide Inorganic materials 0.000 abstract description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052756 noble gas Inorganic materials 0.000 abstract 1
- 230000015654 memory Effects 0.000 description 125
- 239000010410 layer Substances 0.000 description 86
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 34
- 239000000758 substrate Substances 0.000 description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 27
- 229910052814 silicon oxide Inorganic materials 0.000 description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 19
- 229910052581 Si3N4 Inorganic materials 0.000 description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 15
- 229910052759 nickel Inorganic materials 0.000 description 15
- 229910052721 tungsten Inorganic materials 0.000 description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 13
- 239000010937 tungsten Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000004891 communication Methods 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000000624 total reflection X-ray fluorescence spectroscopy Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001506 fluorescence spectroscopy Methods 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
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- H10B—ELECTRONIC MEMORY DEVICES
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Abstract
【解決手段】ソース領域及びドレイン領域と、該ソース領域及びドレイン領域の間に設けられたチャネル形成領域を有する半導体層と、前記半導体層上に、第1の絶縁層、第1のゲート電極、第2の絶縁層、第2のゲート電極が順次重ね合わせて設けられ、前記ソース領域及びドレイン領域は、その一部又は全てがニッケルシリサイド層で形成され、前記第1のゲート電極は、絶縁膜で周囲が覆われていると共に、希ガス元素を含む不揮発性半導体記憶装置に関する。
【選択図】図1
Description
本実施の形態を、図1、図2(A)〜図2(C)、図3(A)〜図3(C)、図4(A)〜図4(C)、図5を用いて説明する。
本実施の形態では、実施の形態1とは異なる方法で、記憶素子を形成する方法について、図6(A)〜図6(C)、図7(A)〜図7(C)を用いて説明する。
本実施の形態では、無線交信可能な半導体装置において、本発明の記憶素子を用いた場合について、図8、図9(A)〜図9(B)を用いて説明する。
実施の形態3に基づいて作製された、無線交信可能な半導体装置200は、電磁波の送信と受信ができるという機能を活用して、様々な物品やシステムに用いることができる。物品とは、例えば、鍵(図10(A)参照)、紙幣、硬貨、有価証券類、無記名債券類、証書類(運転免許証や住民票等、図10(B)参照)、書籍類、容器類(シャーレ等、図10(C)参照)、包装用容器類(包装紙やボトル等、図10(E)(F)参照)、記録媒体(ディスクやビデオテープ等)、乗物類(自転車等)、装身具(鞄や眼鏡等、図10(D)参照)、食品類、衣類、生活用品類、電子機器(液晶表示装置、EL表示装置、テレビジョン装置、携帯端末等)等である。
本実施の形態は、いわゆるフローティングゲート型のメモリトランジスタを有する不揮発性半導体記憶装置に関する。図13に本実施の形態に係る不揮発性メモリトランジスタの断面構造を示す。
102 島状半導体膜
103 チャネル形成領域
104 高濃度不純物領域
105 シリサイド領域
106 トンネル絶縁膜
107 フローティングゲート
108 ゲート絶縁膜
109 コントロールゲート
110 サイドウォール
111 基板
112 下地膜
113 非晶質半導体膜
114 結晶性半導体膜
115 レーザ光
117 金属膜
118 層間絶縁膜
119 配線
121 チャネル形成領域
122 ソース領域またはドレイン領域
200 半導体装置
201 演算処理回路
202 記憶回路
203 アンテナ
204 電源回路
205 復調回路
206 変調回路
207 リーダ/ライタ
301 基板
302 下地絶縁膜
303 半導体膜
502 TFT
503 TFT
504 TFT
506 記憶素子
507 記憶素子
508 記憶素子
600 不揮発性メモリトランジスタ
601 半導体基板
602 素子分離絶縁層
603 領域
604 領域
605 シリサイド領域
606 ゲート絶縁層
611 ゲート電極
611a 下層電極
611b 上層電極
612 ゲート絶縁層
613 ゲート電極
614 シリサイド領域
615 絶縁膜
616 サイドウォール
617 パシベーション膜
621 絶縁層
622 導電層
623 保護層
624 絶縁膜
626 導電層
627 絶縁層
628 導電層
629 絶縁膜
629 絶縁膜
632 ゲート電極
632a 下層電極
632b 上層電極
634 ゲート電極
635 ハードマスク
641 不純物元素
643 エクステンション領域
645 絶縁膜
651 不純物元素
652 領域
654 金属膜
661 ソースコンタクト
662 ドレインコンタクト
701 不揮発性メモリトランジスタ
702 タングステンプラグ
702a タングステンプラグ
702b タングステンプラグ
702c タングステンプラグ
711 絶縁膜
712 絶縁膜
713 ソース線
714 導電膜
721 絶縁膜
723 導電膜
731 ビット線
732 パシベーション膜
733 絶縁膜
1021 メモリセル
1023 メモリセルアレイ
1024 ビット線駆動回路
1025 カラムデコーダ
1026 読み出し回路
1027 セレクタ
1028 インターフェース
1029 ワード線駆動回路
1030 ロウデコーダ
1031 レベルシフタ
1032 TFT
1033 記憶素子
B0 ビット線
B1 ビット線
Bx ビット線
BL ビット線
BL0 ビット線
BL1 ビット線
BL2 ビット線
SL ソース線
S1 選択トランジスタ
S2 選択トランジスタ
SG1 選択ゲート線
SG2 選択ゲート線
WL ワード線
WL00 ワード線
WL01 ワード線
WL02 ワード線
WL31 ワード線
M00 メモリセル
M01 メモリセル
M02 メモリセル
M31 メモリセル
Claims (5)
- ソース領域及びドレイン領域と、該ソース領域及びドレイン領域の間に設けられたチャネル形成領域を有する半導体層と、
前記半導体層上に、第1の絶縁層、第1のゲート電極、第2の絶縁層、第2のゲート電極が順次重ね合わせて設けられ、
前記ソース領域及びドレイン領域は、その一部又は全てがシリサイド層で形成され、
前記第1のゲート電極は、絶縁膜で周囲が覆われていると共に、希ガス元素を含むことを特徴とする不揮発性半導体記憶装置。 - 請求項1において、
前記第1のゲート電極は、一導電型を付与する不純物元素を含む半導体層で形成されるものであって、該半導体層に前記希ガス元素が含まれていることを特徴とする不揮発性半導体記憶装置。 - 請求項1において、
前記第1のゲート電極は、一導電型を付与する不純物元素を含む第1の半導体層と、希ガス元素を含む第2の半導体層が積層されていることを特徴とする不揮発性半導体記憶装置。 - 請求項2または請求項3において、
前記希ガス元素の濃度は5.0×1019atoms/cm3以上であることを特徴とする不揮発性半導体記憶装置。 - 請求項2乃至請求項4のいずれか1項において、
前記希ガスはアルゴン、クリプトン、キセノンから選ばれた1つであることを特徴とする不揮発性半導体記憶装置。
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US7791172B2 (en) | 2010-09-07 |
KR101467389B1 (ko) | 2014-12-01 |
US20100314624A1 (en) | 2010-12-16 |
KR20080085698A (ko) | 2008-09-24 |
US8072017B2 (en) | 2011-12-06 |
US20080230825A1 (en) | 2008-09-25 |
US8395201B2 (en) | 2013-03-12 |
JP5301177B2 (ja) | 2013-09-25 |
US20120043549A1 (en) | 2012-02-23 |
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