JP5279290B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5279290B2 JP5279290B2 JP2008037033A JP2008037033A JP5279290B2 JP 5279290 B2 JP5279290 B2 JP 5279290B2 JP 2008037033 A JP2008037033 A JP 2008037033A JP 2008037033 A JP2008037033 A JP 2008037033A JP 5279290 B2 JP5279290 B2 JP 5279290B2
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- diffusion layer
- type diffusion
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- semiconductor device
- protection circuit
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- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000009792 diffusion process Methods 0.000 claims description 94
- 239000000758 substrate Substances 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 230000015556 catabolic process Effects 0.000 claims description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000006378 damage Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
(1)第一導電型の拡散層および第二導電型の拡散層の接合からなるダイオード型ESD保護回路がチップの外周領域全体もしくは外周領域の一部に形成されており、前記第一導電型の拡散層もしくは前記第二導電型の拡散層のいずれかにチップの基板電位を固定するために形成されているチップ外周領域の電源もしくはグランドに電気的に接続された拡散層を用いることを特徴とするESD保護回路を含む半導体装置とした。
(2)前記第一導電型の拡散層および第二導電型の拡散層の接合からなるダイオード型ESD保護回路において、第一導電型の拡散層および第二導電型の拡散層の接合が平面的に直線状に接合していることを特徴とする半導体装置とした。
(3)前記第一導電型の拡散層および第二導電型の拡散層の接合からなるダイオード型ESD保護回路において、第一導電型の拡散層および第二導電型の拡散層の接合が平面的に矩形状に接合していることを特徴とする半導体装置とした。
(4)前記第一導電型の拡散層および第二導電型の拡散層の接合からなるダイオード型ESD保護回路において、第一導電型の拡散層および第二導電型の拡散層の接合が平面的に波形状に接合していることを特徴とする半導体装置とした。
(5)前記第一導電型の拡散層および第二導電型の拡散層の接合からなるダイオード型ESD保護回路において、第一導電型の拡散層および第二導電型の拡散層の接合が平面的に楔状に接合していることを特徴とする半導体装置とした。
102 ソース電極
103 ドレイン電極
104 P+拡散層電極
201 N+拡散層
202 P+拡散層
203 Nウェル拡散層
204 P型基板
205 耐圧調整用N型拡散層
301 ESD保護回路領域
302 内部回路領域
303 ボンディングパッド領域
304 チップ内部
401 素子分離
403 コンタクト
Claims (5)
- 第一導電型の拡散層と第二導電型の拡散層との間に耐圧調整用第二導電型の拡散層を設けることで形成したPN接合からなるダイオード型ESD保護回路が第一導電型の半導体基板からなるチップの外周領域全体もしくは外周領域の一部に形成されており、前記第一導電型の拡散層もしくは前記第二導電型の拡散層のいずれかにチップの基板電位を固定するために形成されているチップ外周領域の電源もしくはグランドに電気的に接続された拡散層を用いることを特徴とするESD保護回路を含む半導体装置。
- 前記第一導電型の拡散層と前記耐圧調整用第二導電型の拡散層および第二導電型の拡散層の接合が平面的に直線状に接合していることを特徴とする請求項1記載の半導体装置。
- 前記第一導電型の拡散層と前記耐圧調整用第二導電型の拡散層および第二導電型の拡散層の接合が平面的に矩形状に接合していることを特徴とする請求項1記載の半導体装置。
- 前記第一導電型の拡散層と前記耐圧調整用第二導電型の拡散層および第二導電型の拡散層の接合が平面的に波形状に接合していることを特徴とする請求項1記載の半導体装置。
- 前記第一導電型の拡散層と前記耐圧調整用第二導電型の拡散層および第二導電型の拡散層の接合が平面的に楔状に接合していることを特徴とする請求項1記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008037033A JP5279290B2 (ja) | 2008-02-19 | 2008-02-19 | 半導体装置 |
US12/378,177 US8736022B2 (en) | 2008-02-19 | 2009-02-11 | Semiconductor device with a diode-type ESD protection circuit |
TW98104980A TWI470767B (zh) | 2008-02-19 | 2009-02-17 | Semiconductor device |
KR1020090013317A KR101626613B1 (ko) | 2008-02-19 | 2009-02-18 | 반도체 장치 |
CN2009101179484A CN101515582B (zh) | 2008-02-19 | 2009-02-19 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008037033A JP5279290B2 (ja) | 2008-02-19 | 2008-02-19 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009200083A JP2009200083A (ja) | 2009-09-03 |
JP5279290B2 true JP5279290B2 (ja) | 2013-09-04 |
Family
ID=40954320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008037033A Expired - Fee Related JP5279290B2 (ja) | 2008-02-19 | 2008-02-19 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8736022B2 (ja) |
JP (1) | JP5279290B2 (ja) |
KR (1) | KR101626613B1 (ja) |
CN (1) | CN101515582B (ja) |
TW (1) | TWI470767B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5441724B2 (ja) * | 2010-01-08 | 2014-03-12 | パナソニック株式会社 | Esd保護素子、半導体装置およびプラズマディスプレイ装置 |
CN101982881B (zh) * | 2010-09-24 | 2012-12-12 | 江苏东光微电子股份有限公司 | 集成esd保护的功率mosfet或igbt及制备方法 |
TWI467728B (zh) * | 2011-08-24 | 2015-01-01 | Himax Tech Ltd | 靜電放電保護元件及其電路 |
US20130075747A1 (en) * | 2011-09-23 | 2013-03-28 | Robert J. Purtell | Esd protection using low leakage zener diodes formed with microwave radiation |
JP6243720B2 (ja) * | 2013-02-06 | 2017-12-06 | エスアイアイ・セミコンダクタ株式会社 | Esd保護回路を備えた半導体装置 |
KR102076374B1 (ko) * | 2014-11-18 | 2020-03-03 | 매그나칩 반도체 유한회사 | Esd 장치 및 그 제조 방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5825264A (ja) * | 1981-08-07 | 1983-02-15 | Hitachi Ltd | 絶縁ゲート型半導体装置 |
KR100266838B1 (ko) * | 1991-11-28 | 2000-09-15 | 이데이 노부유끼 | 전계효과형 트랜지스터 |
JPH05235379A (ja) * | 1992-02-19 | 1993-09-10 | Nec Ic Microcomput Syst Ltd | 保護用ダイオード素子 |
JP3415401B2 (ja) * | 1997-08-28 | 2003-06-09 | 株式会社東芝 | 半導体集積回路装置及びその製造方法 |
US20040207020A1 (en) * | 1999-09-14 | 2004-10-21 | Shiao-Chien Chen | CMOS silicon-control-rectifier (SCR) structure for electrostatic discharge (ESD) protection |
US6452234B1 (en) * | 2000-11-27 | 2002-09-17 | Advanced Micro Devices, Inc. | How to improve the ESD on SOI devices |
TW502459B (en) * | 2001-01-03 | 2002-09-11 | Taiwan Semiconductor Mfg | Diode structure with high electrostatic discharge protection and electrostatic discharge protection circuit design of the diode |
JP4759982B2 (ja) * | 2003-12-18 | 2011-08-31 | 株式会社デンソー | ダイオード |
JP5008840B2 (ja) * | 2004-07-02 | 2012-08-22 | ローム株式会社 | 半導体装置 |
-
2008
- 2008-02-19 JP JP2008037033A patent/JP5279290B2/ja not_active Expired - Fee Related
-
2009
- 2009-02-11 US US12/378,177 patent/US8736022B2/en not_active Expired - Fee Related
- 2009-02-17 TW TW98104980A patent/TWI470767B/zh not_active IP Right Cessation
- 2009-02-18 KR KR1020090013317A patent/KR101626613B1/ko active IP Right Grant
- 2009-02-19 CN CN2009101179484A patent/CN101515582B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20090206439A1 (en) | 2009-08-20 |
TW200950060A (en) | 2009-12-01 |
TWI470767B (zh) | 2015-01-21 |
US8736022B2 (en) | 2014-05-27 |
KR20090089805A (ko) | 2009-08-24 |
CN101515582A (zh) | 2009-08-26 |
KR101626613B1 (ko) | 2016-06-01 |
CN101515582B (zh) | 2013-01-02 |
JP2009200083A (ja) | 2009-09-03 |
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