JP5277020B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP5277020B2 JP5277020B2 JP2009039034A JP2009039034A JP5277020B2 JP 5277020 B2 JP5277020 B2 JP 5277020B2 JP 2009039034 A JP2009039034 A JP 2009039034A JP 2009039034 A JP2009039034 A JP 2009039034A JP 5277020 B2 JP5277020 B2 JP 5277020B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor layer
- insulating film
- gate insulating
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010408 film Substances 0.000 claims abstract description 265
- 239000004065 semiconductor Substances 0.000 claims abstract description 201
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000012535 impurity Substances 0.000 claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 239000010410 layer Substances 0.000 description 180
- 238000000034 method Methods 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 238000005401 electroluminescence Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Description
4 半導体層、5 p型半導体層、
6 n型オーミックコンタクト層、
7 ソース電極、8 ドレイン電極、
9 層間絶縁膜、9a コンタクトホール、
10 画素電極、15 レーザー光、16 エッチング、
31 第1ゲート絶縁膜、32 第2ゲート絶縁膜、
41 第1半導体層、42 第2半導体層、
50 TFT、51 保持容量、100 TFT基板、
101 表示領域、102 額縁領域、
103 ゲート配線、104 ソース配線、
105 走査信号駆動回路、106 表示信号駆動回路、
107 画素、108、109 外部配線
Claims (1)
- 画素スイッチング素子である薄膜トランジスタと画素電極とを備えた表示装置であって、
前記薄膜トランジスタは、
基板上に形成されたゲート電極と、
前記ゲート電極を覆う、SiN膜からなる第1ゲート絶縁膜と、前記第1ゲート絶縁膜上に形成されたSiO膜からなる第2ゲート絶縁膜とを有するゲート絶縁膜と、
前記ゲート絶縁膜上に形成され、前記ゲート電極の対面に配置された半導体層と、
前記半導体層上に、n型不純物を含むオーミックコンタクト層を介して形成された、ソース電極及びドレイン電極と、
前記ソース電極の下の前記オーミックコンタクト層と前記半導体層との間、前記ドレイン電極の下の前記オーミックコンタクト層と前記半導体層との間にそれぞれ形成されたp型半導体層と、を備え、
前記第2ゲート絶縁膜と接する前記半導体層の界面部に結晶性を有する半導体膜が形成されたものであり、
前記ドレイン電極に前記画素電極が接続された表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009039034A JP5277020B2 (ja) | 2009-02-23 | 2009-02-23 | 表示装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009039034A JP5277020B2 (ja) | 2009-02-23 | 2009-02-23 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010199116A JP2010199116A (ja) | 2010-09-09 |
JP5277020B2 true JP5277020B2 (ja) | 2013-08-28 |
Family
ID=42823594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009039034A Active JP5277020B2 (ja) | 2009-02-23 | 2009-02-23 | 表示装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5277020B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8777320B2 (en) | 2008-12-21 | 2014-07-15 | W.E.T. Automotive Systems Ag | Ventilation system |
US8888573B2 (en) | 2007-12-10 | 2014-11-18 | W.E.T. Automotive Systems Ag | Seat conditioning module and method |
US9085255B2 (en) | 2008-04-08 | 2015-07-21 | Gentherm Gmbh | Ventilation means |
US9283879B2 (en) | 2011-12-26 | 2016-03-15 | Gentherm Gmbh | Air conveyor |
US9440567B2 (en) | 2005-08-19 | 2016-09-13 | Gentherm Gmbh | Automotive vehicle seat insert |
US9448017B2 (en) | 2011-12-09 | 2016-09-20 | Gentherm Gmbh | Temperature control system for an electrochemical voltage source |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014017278A (ja) * | 2010-11-02 | 2014-01-30 | Panasonic Corp | 半導体装置の製造方法、およびそれを用いた薄膜トランジスタ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01149480A (ja) * | 1987-12-04 | 1989-06-12 | Sumitomo Metal Ind Ltd | 薄膜半導体素子 |
JPH01309379A (ja) * | 1988-06-07 | 1989-12-13 | Sumitomo Metal Ind Ltd | 薄膜半導体素子 |
JPH03278477A (ja) * | 1990-03-27 | 1991-12-10 | Canon Inc | 薄膜半導体装置及びこの薄膜半導体装置を用いた光電変換装置 |
JPH05107560A (ja) * | 1991-10-21 | 1993-04-30 | Hitachi Ltd | 液晶表示装置とその製造方法 |
-
2009
- 2009-02-23 JP JP2009039034A patent/JP5277020B2/ja active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9440567B2 (en) | 2005-08-19 | 2016-09-13 | Gentherm Gmbh | Automotive vehicle seat insert |
US8888573B2 (en) | 2007-12-10 | 2014-11-18 | W.E.T. Automotive Systems Ag | Seat conditioning module and method |
US10377276B2 (en) | 2007-12-10 | 2019-08-13 | Gentherm Gmbh | Seat conditioning module and method |
US11377006B2 (en) | 2007-12-10 | 2022-07-05 | Gentherm Gmbh | Seat conditioning module |
US9085255B2 (en) | 2008-04-08 | 2015-07-21 | Gentherm Gmbh | Ventilation means |
US8777320B2 (en) | 2008-12-21 | 2014-07-15 | W.E.T. Automotive Systems Ag | Ventilation system |
US9448017B2 (en) | 2011-12-09 | 2016-09-20 | Gentherm Gmbh | Temperature control system for an electrochemical voltage source |
US9283879B2 (en) | 2011-12-26 | 2016-03-15 | Gentherm Gmbh | Air conveyor |
Also Published As
Publication number | Publication date |
---|---|
JP2010199116A (ja) | 2010-09-09 |
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